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31. 发明申请

US20100308376A1 SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE 失效
标题翻译：半导体波导，半导体波长制造方法和电子器件
公开(公告)号：US20100308376A1
公开(公告)日：2010-12-09
申请号：US12811011
申请日：2008-12-26
申请人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
发明人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
IPC分类号： H01L29/12 , H01L21/20 , H01L21/322
CPC分类号： H01L21/8258 , H01L21/02381 , H01L21/0245 , H01L21/02546 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/8252 , H01L29/66318
摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.
摘要翻译：实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。提供了包括Si晶片的半导体晶片; 所述抑制层形成在所述晶片上并且抑制晶体生长，所述抑制层包括覆盖所述晶片的一部分的覆盖区域和不覆盖所述覆盖区域内的所述晶片的一部分的开放区域; 在开放区域晶体生长的Ge层; 以及在Ge层上晶体生长的功能层。 Ge层可以通过使得能够移动晶体缺陷的温度和持续时间退火而形成，并且退火重复多次。

32. 发明授权

US5849434A Non-aqueous electrolyte lithium secondary battery 失效
标题翻译：非水电解质锂二次电池
公开(公告)号：US5849434A
公开(公告)日：1998-12-15
申请号：US685562
申请日：1996-07-24
申请人： Hitoshi Miura , Atsushi Terahara , Katsuhiko Iwasaki , Kenichiro Kami , Taketsugu Yamamoto
发明人： Hitoshi Miura , Atsushi Terahara , Katsuhiko Iwasaki , Kenichiro Kami , Taketsugu Yamamoto
IPC分类号： H01M4/58 , H01M4/62 , H01M4/64
CPC分类号： H01M4/621 , H01M4/587
摘要： A non-aqueous electrolyte lithium secondary battery, comprising a cathode containing, as active material, a material that can be doped/undoped with lithium ions, an anode containing, as active material, a carbonaceous material that can be doped/undoped with lithium ions, a separator interposed between the cathode and anode and an electrolyte prepared by dissolving lithium salt in an organic solvent, wherein the anode contains a polymer having carbonate groups represented by the structural formula �I!: ##STR1## said polymer having a number average molecular weight of not less than 300 and not more than 200,000. The lithium secondary battery has cycle life and high-rate capacity which are improved without reducing low-temperature capacity.
摘要翻译：一种非水电解质锂二次电池，其包含含有作为活性材料的能够掺杂/未掺杂锂离子的材料的阴极，含有可掺杂/未掺杂锂离子的碳质材料作为活性材料的阳极插入在阴极和阳极之间的隔膜和通过将锂盐溶解在有机溶剂中而制备的电解质，其中阳极含有具有由结构式[I]表示的碳酸酯基团的聚合物：所述聚合物具有数均分子量不小于300，不大于20万。锂二次电池具有循环寿命和高速率容量，在不降低低温容量的情况下得到改进。

33. 发明授权

US08716836B2 Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device 失效
标题翻译：半导体晶片，半导体晶片制造方法和电子器件
公开(公告)号：US08716836B2
公开(公告)日：2014-05-06
申请号：US12811011
申请日：2008-12-26
申请人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
发明人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
IPC分类号： H01L21/331 , H01L29/737
CPC分类号： H01L21/8258 , H01L21/02381 , H01L21/0245 , H01L21/02546 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/8252 , H01L29/66318
摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.
摘要翻译：实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。提供了包括Si晶片的半导体晶片; 所述抑制层形成在所述晶片上并且抑制晶体生长，所述抑制层包括覆盖所述晶片的一部分的覆盖区域和不覆盖所述覆盖区域内的所述晶片的一部分的开放区域; 在开放区域晶体生长的Ge层; 以及在Ge层上晶体生长的功能层。 Ge层可以通过使得能够移动晶体缺陷的温度和持续时间退火而形成，并且退火重复多次。

34. 发明申请

US20130288127A1 PRODUCTION METHOD OF CARBON MATERIAL FOR SODIUM SECONDARY BATTERY 审中-公开
标题翻译：用于钠二次电池的碳材料的生产方法
公开(公告)号：US20130288127A1
公开(公告)日：2013-10-31
申请号：US13979049
申请日：2011-12-12
申请人： Shingo Matsumoto , Taketsugu Yamamoto , Junji Suzuki
发明人： Shingo Matsumoto , Taketsugu Yamamoto , Junji Suzuki
IPC分类号： H01M4/133 , H01M4/131 , H01M4/62 , H01M4/1393
CPC分类号： H01M4/133 , C01B32/05 , H01M4/1393 , H01M4/485 , H01M4/587 , H01M4/623 , H01M10/054
摘要： The invention provides a method for producing a carbon material as a negative electrode active material that can dope and undope a sodium ion. The production method of a carbon material for a sodium secondary battery includes a step of heating at a temperature of 800 to 2500° C. a compound according to Formula (1), Formula (2) or Formula (3), and having 2 or more oxygen atoms, or a mixture of an aromatic derivative 1 having an oxygen atom in the molecule and an aromatic derivative 2 having a carboxyl group in the molecule and being different from the aromatic derivative 1.
摘要翻译：本发明提供一种碳素材料的制造方法，所述碳材料作为负极活性物质，可以使钠离子掺杂并且不溶解。钠二次电池用碳材料的制造方法包括在800〜2500℃的温度下加热式（1），式（2）或式（3）的化合物，并且具有2或或分子中具有氧原子的芳族衍生物1和分子中具有羧基的芳族衍生物2与芳族衍生物1不同的混合物。

35. 发明申请

US20120244441A1 SILICON FILM AND LITHIUM SECONDARY BATTERY 审中-公开
标题翻译：硅胶片和锂二次电池
公开(公告)号：US20120244441A1
公开(公告)日：2012-09-27
申请号：US13514893
申请日：2010-12-10
申请人： Suguru Noda , Shingo Morokuma , Taketsugu Yamamoto
发明人： Suguru Noda , Shingo Morokuma , Taketsugu Yamamoto
IPC分类号： C01B33/02 , B32B5/06 , C23C16/24 , C23C16/30 , B32B15/04 , H01M4/38 , B82Y30/00
CPC分类号： H01M10/052 , C23C14/14 , C23C14/541 , H01G11/06 , H01G11/24 , H01G11/28 , H01M4/0421 , H01M4/134 , H01M4/1395 , Y02E60/13 , Y02T10/7011 , Y02T10/7022 , Y10T428/249921
摘要： Provided are a silicon film which can give an electrode suitable for use in high-capacity lithium secondary batteries, and a process for easily producing the silicon film. The silicon film comprises a columnar aggregate which is an aggregate of columnar structures made of Si or a Si compound. The silicon film may be a film wherein the diameter of the columnar structures is from 10 nm to 100 nm and the film thickness is from 0.2 μm to 100 μm. In the process for preparing a silicon film on a substrate by vapor deposition using a vapor deposition source made of Si or a Si compound, the temperature of the vapor deposition source is 1700 K or higher, the temperature of the substrate is lower than that of the vapor deposition source, and the temperature difference between the vapor deposition source and the substrate is 700 K or larger. In the process for preparing the silicon film, the distance (D) between the vapor deposition source and the substrate is shorter than the minimum diameter (P) of the substrate, the minimum diameter (P) being determined by viewing the substrate from the perpendicular direction. Also provided are an electrode comprising the silicon film, and a lithium secondary battery comprising the electrode as a negative electrode.
摘要翻译：提供一种能够提供适用于大容量锂二次电池的电极的硅膜，以及容易制造硅膜的方法。硅膜包括柱状聚集体，其是由Si或Si化合物制成的柱状结构的聚集体。硅膜可以是其中柱状结构的直径为10nm至100nm并且膜厚度为0.2μm至100μm的膜。在通过使用由Si或Si化合物制成的气相沉积源通过气相沉积在衬底上制备硅膜的方法中，气相沉积源的温度为1700K或更高，衬底的温度低于蒸镀源和蒸镀源与基板的温度差为700K以上。在制备硅膜的过程中，蒸镀源与衬底之间的距离（D）比衬底的最小直径（P）短，最小直径（P）通过从垂直方向观察衬底来确定方向。还提供了包括硅膜的电极和包含该电极作为负电极的锂二次电池。

36. 发明申请

US20120021273A1 SODIUM ION BATTERY 审中-公开
标题翻译：钠离子电池
公开(公告)号：US20120021273A1
公开(公告)日：2012-01-26
申请号：US13259775
申请日：2010-03-23
申请人： Shigekazu Ohmori , Taketsugu Yamamoto
发明人： Shigekazu Ohmori , Taketsugu Yamamoto
IPC分类号： H01M2/16 , H01M4/66 , H01M10/26
CPC分类号： H01M10/054 , H01M2/1686 , H01M4/505 , H01M4/587 , H01M4/661 , H01M4/662 , H01M10/0566
摘要： Disclosed is a sodium ion battery comprising a positive electrode, a negative electrode, and a sodium ion nonaqueous electrolyte, wherein the negative electrode comprises a negative electrode active material and a negative electrode current collector made of aluminum or aluminum alloy. Also disclosed is use of the negative electrode current collector made of aluminum or aluminum alloy as a negative electrode current collector of a sodium ion secondary battery.
摘要翻译：公开了包含正极，负极和钠离子非水电解质的钠离子电池，其中负极包括由铝或铝合金制成的负极活性材料和负极集电体。还公开了使用由铝或铝合金制成的负极集电体作为钠离子二次电池的负极集电体。

37. 发明申请

US20060234400A1 Method of judging quality of semiconductor epitaxial crystal wafer and wafer manufacturing method using the same 审中-公开
标题翻译：判断半导体外延晶体晶片的质量的方法和使用其的晶片制造方法
公开(公告)号：US20060234400A1
公开(公告)日：2006-10-19
申请号：US10546289
申请日：2004-02-19
申请人： Masaaki Nakayama , Tomoyuki Takada , Taketsugu Yamamoto
发明人： Masaaki Nakayama , Tomoyuki Takada , Taketsugu Yamamoto
IPC分类号： H01L21/66 , H01L21/44 , G01R31/26
CPC分类号： G01N21/1717
摘要： In a method of determining the quality of a semiconductor epitaxial crystal wafer having a buffer structure portion comprised of epitaxial layers the semiconductor epitaxial crystal wafer (S) is irradiated with pulsed exciting light (5A) to modulate an internal electric field of the buffer structure portion, the electric transport properties deriving from the crystal quality of the buffer structure of the semiconductor epitaxial crystal wafer (S) are predicted based on a spectral difference in reflectance in reflection probe light (3B) from the semiconductor epitaxial crystal wafer (S), to determine the crystal quality of the buffer structure portion. The crystal quality may also be determined based on electric field strength calculated from Franz-Keldysh oscillation originating in the semiconductor chemical compound of the buffer structure portion.
摘要翻译：在确定具有由外延层构成的缓冲结构部分的半导体外延晶体晶片的质量的方法中，半导体外延晶体晶片（S）用脉冲激光（5A）照射以调制缓冲结构的内部电场基于来自半导体外延晶体晶片（S）的反射探测光（3B）的反射率的光谱差，预测从半导体外延晶体晶片（S）的缓冲结构的晶体质量得到的电输送特性，，以确定缓冲结构部分的晶体质量。晶体质量也可以基于源自缓冲结构部分的半导体化合物的Franz-Keldysh振荡计算的电场强度来确定。

38. 发明授权

US6087031A Polymer electrolyte and process for producing the same 失效
标题翻译：聚合物电解质及其制备方法
公开(公告)号：US6087031A
公开(公告)日：2000-07-11
申请号：US997547
申请日：1997-12-23
申请人： Katsuhiko Iwasaki , Taketsugu Yamamoto , Atsushi Terahara , Michihisa Isobe
发明人： Katsuhiko Iwasaki , Taketsugu Yamamoto , Atsushi Terahara , Michihisa Isobe
IPC分类号： C08G75/23 , C08J5/20 , H01M8/02 , H01M8/10
CPC分类号： H01M8/1072 , C08J5/20 , H01M8/1027 , H01M8/1032 , H01M8/1067 , Y02P70/56
摘要： A polymer electrolyte comprising a sulfonated polyethersulfone having an ion-exchange group equivalent weight of 870 to 5000 g/mol, which is obtainable by sulfonating a polyethersulfone having the structural unit represented by the following structural formula, ##STR1## The polymer electrolyte is cheap, easily mold-processable by virtue of soluble property in organic solvent and thermoplastic property, easily film-processable, highly water-resistant, and suitable for a fuel cell.
摘要翻译：包含具有870〜5000g / mol的离子交换基当量的磺化聚醚砜的聚合物电解质，其可通过磺化具有由下列结构式表示的结构单元的聚醚砜获得。该聚合物电解质便宜，由于在有机溶剂中的可溶性和热塑性能可加工，易于加工膜，高度防水，并且适用于燃料电池。

39. 发明授权

US5595842A Lithium secondary battery having a cathode containing galliam 失效
标题翻译：具有阴极的锂二次电池
公开(公告)号：US5595842A
公开(公告)日：1997-01-21
申请号：US438654
申请日：1995-05-09
申请人： Kenji Nakane , Yasunori Nishida , Chikashi Akamatsu , Tomoari Satoh , Kazuyuki Tanino , Taketsugu Yamamoto
发明人： Kenji Nakane , Yasunori Nishida , Chikashi Akamatsu , Tomoari Satoh , Kazuyuki Tanino , Taketsugu Yamamoto
IPC分类号： H01M4/52 , H01M4/525 , H01M10/052 , H01M10/36
CPC分类号： H01M10/052 , H01M4/525 , Y02T10/7011
摘要： A lithium secondary battery that includes a cathode containing, as an active material, a material that can be doped/undoped with lithium ions; an anode containing, as an active material, a lithium metal, a lithium alloy or a material that can be doped/undoped with lithium ions; and a liquid or solid electrolyte. In this lithium secondary battery, the active material used in the cathode is lithiated nickel dioxide containing gallium. As a result, the lithium secondary battery attains excellent cycle and overcharge resistance characteristics and has a high energy density.
摘要翻译：一种锂二次电池，其包括含有可掺杂/未掺杂锂离子的材料作为活性材料的阴极; 含有作为活性物质的锂金属，锂合金或可掺杂/未掺杂锂离子的材料的阳极; 和液体或固体电解质。在该锂二次电池中，阴极中使用的活性物质是含有镓的锂化二氧化镍。结果，锂二次电池具有优异的循环和过充电电阻特性并且具有高的能量密度。

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