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    • 40. 发明授权
    • Organic semiconductor device
    • 有机半导体器件
    • US07811852B2
    • 2010-10-12
    • US12174685
    • 2008-07-17
    • Yoshiaki YamamotoTakahito OyamadaChihaya Adachi
    • Yoshiaki YamamotoTakahito OyamadaChihaya Adachi
    • H01L51/40
    • H01L51/0512H01L51/0037H01L51/0038H01L51/52H01L51/5203
    • An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.
    • 具有垂直结构的有机半导体器件具有有机薄膜晶体管和发光元件的功能,其中在形成栅电极的情况下可以控制有机薄膜晶体管和发光元件两者的电特性 具有有机导电膜及其制造方法。 上述有机半导体器件具有以下结构:有机半导体膜被夹在用作有源薄膜晶体管的源电极和漏电极的一对电极之间,并且还用作发光元件的阳极和阴极, 作为栅电极的薄的有机导电膜被夹在有机半导体膜之间,有机导电膜的一部分与辅助电极电连接,由此有机薄膜晶体管和发光元件两者的电特性可以 被控制。