专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20080218213A1 BIDIRECTIONAL LEVEL SHIFT CIRCUIT AND BIDIRECTIONAL BUS SYSTEM 失效
标题翻译：双向移位电路和双向总线系统
公开(公告)号：US20080218213A1
公开(公告)日：2008-09-11
申请号：US12042677
申请日：2008-03-05
申请人： Hitoshi Kobayashi , Keiichi Fujii
发明人： Hitoshi Kobayashi , Keiichi Fujii
IPC分类号： H03K19/0175
CPC分类号： H03K19/018521
摘要： A plurality of transistors are connected between an I2C bus operating at a first voltage level and an I2C bus operating at a second voltage level and a main control electrode of at least one transistor is connected to a first power supply terminal and a main control electrode of the other at least one transistor is connected to an intermediate level between the first voltage level and the second voltage level, whereby a withstand voltage required to a transistor of the bidirectional level shift circuit of the I2C bus can be lowered.
摘要翻译：多个晶体管连接在以第一电压电平工作的I + 2 C总线和以第二电压电平工作的I + 2 C总线和主控制电极至少一个晶体管连接到第一电源端子，并且另一个至少一个晶体管的主控制电极连接到第一电压电平和第二电压电平之间的中间电平，由此，晶体管所需的耐受电压可以降低I 2 C总线的双向电平移位电路。

32. 发明申请

US20080145659A1 PYROGENICALLY PRODUCED SILICON DIOXIDE POWDER 审中-公开
标题翻译：生产二氧化硅粉末
公开(公告)号：US20080145659A1
公开(公告)日：2008-06-19
申请号：US12017861
申请日：2008-01-22
申请人： Kai SCHUMACHER , Naruyasu Ishibashi , Hitoshi Kobayashi , Paul Brandl
发明人： Kai SCHUMACHER , Naruyasu Ishibashi , Hitoshi Kobayashi , Paul Brandl
IPC分类号： C01B33/12
CPC分类号： C01B33/183 , Y10T428/2982
摘要： Pyrogenically produced silicon dioxide powder in the form of aggregates of primary particles having a BET surface area of 300±25 m2/g, wherein the aggregates display an average surface area of 4800 to 6000 nm2, an average equivalent circle diameter (ECD) of 60 to 80 nm and an average circumference of 580 to 750 nm.It is produced by a pyrogenic process in which silicon tetrachloride and a maximum of up to 40 wt. % of a second silicon component comprising H3SiCl, H2SiCl2, HSiCl3, CH3SiCl3, (CH3)2SiCl2, (CH3)3SiCl and/or (n-C3H7)SiCl3 are mixed with primary air and a combustion gas and burnt into a reaction chamber, secondary air also being introduced into the reaction chamber, and the feed materials being chosen such that an adiabatic flame temperature of 1390 to 1450° C. is obtained.It can be used as a filler.
摘要翻译：以BET表面积为300±25m 2 / g的一次粒子的聚集体形式的热解生成的二氧化硅粉末，其中聚集体的平均表面积为4800〜6000nm， 2，平均当量圆直径（ECD）为60〜80nm，平均周长为580〜750nm。它是通过热解法生产的，其中四氯化硅和最多达40wt。％的包含H 3 SiCl，H 2 SiCl 2，HSiCl 3，CH，SUB的第二硅组分的％（CH 3）3 SiCl 3，（CH 3 3）2 SiCl 2，（CH 3） 3 N 3 SiCl 3和/或（n C 3 H 7）SiCl 3 3与初级空气和燃烧气体并燃烧到反应室中，二次空气也被引入反应室，并且进料选择为使得绝热火焰温度为1390至1450℃。它可以用作填料。

33. 发明申请

US20080048491A1 Brake Control System 审中-公开
标题翻译：制动控制系统
公开(公告)号：US20080048491A1
公开(公告)日：2008-02-28
申请号：US11834291
申请日：2007-08-06
申请人： Kenichiro MATSUBARA , Hitoshi Kobayashi , Toshiyuki Innami , Kimio Nishino , Toshiharu Sugawara , Akihiro Sato , Katsuhiko Wakabayashi
发明人： Kenichiro MATSUBARA , Hitoshi Kobayashi , Toshiyuki Innami , Kimio Nishino , Toshiharu Sugawara , Akihiro Sato , Katsuhiko Wakabayashi
IPC分类号： B60T11/20 , B60T8/92 , F16D65/14
CPC分类号： B60T8/3255 , B60T8/36 , B60T8/4072 , B60T8/885 , B60T17/22 , B60T2270/414
摘要： A brake control system includes a plurality of fluid channels communicating from a hydraulic pressure source to a reservoir for controlling brake hydraulic pressures supplied to respective brake calipers by a plurality of hydraulic pressure control valves arranged in the respective fluid channels, wherein valve drive circuits for controlling the hydraulic pressure control valves are provided, two power relays for supplying power are connected to the plurality of valve drive circuits and when all hydraulic pressure control valves arranged in one fluid channel are normally open valves which communicate the hydraulic pressure source to the reservoir when nonenergized, different power relays are used for at least two valve drive circuits in the valve drive circuit corresponding to all the hydraulic pressure control valves to thereby prevent a malfunction of one power relay from causing all brake hydraulic pressures to fall.
摘要翻译：制动控制系统包括多个液压通道，其从液压源连通到储存器，用于通过布置在各个流体通道中的多个液压控制阀控制供应到各个制动钳的制动液压，其中用于控制的阀驱动电路提供液压控制阀，两个用于供电的功率继电器连接到多个阀驱动电路，并且当布置在一个流体通道中的所有液压控制阀是通常打开的阀，当不通电时将液压源连通到储存器对于与所有液压控制阀对应的阀驱动回路中的至少两个阀驱动回路使用不同的功率继电器，从而防止一个动力继电器的故障导致所有制动液压下降。

34. 发明申请

US20070222284A1 Brake control system 审中-公开
标题翻译：制动控制系统
公开(公告)号：US20070222284A1
公开(公告)日：2007-09-27
申请号：US11657643
申请日：2007-01-25
申请人： Kenichiro Matsubara , Hitoshi Kobayashi , Toshiyuki Innami , Kimio Nishino , Toshiharu Sugawara
发明人： Kenichiro Matsubara , Hitoshi Kobayashi , Toshiyuki Innami , Kimio Nishino , Toshiharu Sugawara
IPC分类号： B60T8/88
CPC分类号： B60T8/885 , B60T13/586 , B60T17/18 , B60T2270/414
摘要： At least one of first and second actuator driving devices is supplied with electric power securely. When failure occurs in any one of main power line, auxiliary power line, first and second power supply lines and first and second relays, the first to third relays are controlled to be opened and closed so that failure part is separated or failure part is isolated from part where failure does not occur or supply of electric power to failure part is cut off or electric power is supplied to part to which electric power cannot be supplied.
摘要翻译：第一和第二致动器驱动装置中的至少一个被牢固地供给电力。当主电源线，辅助电源线，第一和第二电源线以及第一和第二继电器中的任何一个发生故障时，第一至第三继电器被控制为打开和关闭，使得故障部分被分离或故障部分被隔离从不发生故障的部分或者向故障部分供电的部分被切断或向不能供电的部分供电。

35. 发明授权

US07262477B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07262477B2
公开(公告)日：2007-08-28
申请号：US10694903
申请日：2003-10-29
申请人： Hideki Okumura , Hitoshi Kobayashi , Masanobu Tsuchitani , Akihiro Osawa , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
发明人： Hideki Okumura , Hitoshi Kobayashi , Masanobu Tsuchitani , Akihiro Osawa , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
IPC分类号： H01L21/8238 , H01L29/00
CPC分类号： H01L21/76224 , H01L21/316 , H01L21/31695 , H01L29/0634 , H01L29/0653 , H01L29/7802
摘要： There is provided a semiconductor device including a semiconductor substrate with a trench, and a particulate insulating layer filling at least a lower portion of the trench and containing insulating particles. The semiconductor device may further include a reflowable dielectric layer covering an upper surface of the particulate insulating layer, the insulating particles being stable at the melting point or the softening point of the reflowable dielectric layer.
摘要翻译：提供了一种包括具有沟槽的半导体衬底和填充至少沟槽的下部并且包含绝缘颗粒的颗粒绝缘层的半导体器件。半导体器件还可以包括覆盖颗粒绝缘层的上表面的可回流电介质层，绝缘颗粒在可回流电介质层的熔点或软化点是稳定的。

36. 发明授权

US07255843B2 Low viscosity-increment fumed-silica and its slurry 有权
标题翻译：低粘度增量热解法二氧化硅及其浆料
公开(公告)号：US07255843B2
公开(公告)日：2007-08-14
申请号：US10326542
申请日：2002-12-23
申请人： Hitoshi Kobayashi , Masamichi Murota , Hirokuni Shirono
发明人： Hitoshi Kobayashi , Masamichi Murota , Hirokuni Shirono
IPC分类号： C01B33/14 , C09C1/28 , C09D17/00
CPC分类号： C01B33/18 , C01P2006/12 , C01P2006/22
摘要： A fumed-silica, which can make a slurry having sufficient wettability to a polar liquid, excellent dispersibility, and low viscosity even in the high concentration, and a slurry thereof. A fumed-silica and its slurry are provided, wherein the water content is controlled so that a weight loss after drying Y, and a dynamic wetting rate to water Z, have specified values.
摘要翻译：可以使极性液体具有足够润湿性的浆料，即使高浓度也具有优异的分散性和低粘度的气相二氧化硅及其浆料。提供了一种热解法二氧化硅及其浆料，其中控制含水量使得干燥后的重量减少Y和对水Z的动态润湿速率具有规定值。

37. 发明申请

US20060023509A1 Nonvolatile memory device and data write method for nonvolatile memory device 有权
标题翻译：非易失性存储器件和非易失性存储器件的数据写入方法
公开(公告)号：US20060023509A1
公开(公告)日：2006-02-02
申请号：US11176324
申请日：2005-07-08
申请人： Satoru Kodaira , Hitoshi Kobayashi , Kimihiro Maemura
发明人： Satoru Kodaira , Hitoshi Kobayashi , Kimihiro Maemura
IPC分类号： G11C16/04
CPC分类号： G11C16/0433
摘要： A nonvolatile memory device, wherein each of memory cells includes one of nonvolatile memory elements and one of wordline switches, wherein each of the wordlines connects in common gate electrodes of the wordline switches of memory cells arranged in the row direction; wherein each of the bitlines connects in common the wordline switches of memory cells arranged in the column direction; and wherein one of the first control gate lines connects in common control gate electrodes of the nonvolatile memory elements of M memory cells in one of memory cell blocks (M is an integer equal to or greater than 2); and wherein, when writing data into a desired memory cell, the wordline switches of the memory cells are turned ON by applying a wordline write voltage to a wordlines corresponding to the desired memory cell, a bitline write voltage is applied to the bitlines connected to the memory cells, and a control gate line write voltage is applied to one of the first control gate lines disposed in the memory cell block.
摘要翻译：一种非易失性存储器件，其中每个存储器单元包括非易失性存储器元件和字线开关中的一个，其中每个字线连接在沿行方向布置的存储器单元的字线开关的公共栅电极中; 其中每个位线共同地连接在列方向上布置的存储器单元的字线开关; 并且其中一个第一控制栅极线连接在存储单元块之一中的M个存储单元的非易失性存储元件的公共控制栅极中（M为等于或大于2的整数）; 并且其中当将数据写入期望的存储单元时，通过将字线写入电压施加到对应于期望的存储单元的字线来使存储单元的字线切换为ON，位线写入电压被施加到连接到所述存储单元的位线存储单元和控制栅线写入电压被施加到设置在存储单元块中的第一控制栅极线之一。

38. 发明申请

US20050275009A1 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US20050275009A1
公开(公告)日：2005-12-15
申请号：US11148302
申请日：2005-06-09
申请人： Kimihiro Maemura , Satoru Kodaira , Hitoshi Kobayashi
发明人： Kimihiro Maemura , Satoru Kodaira , Hitoshi Kobayashi
IPC分类号： H01L21/8247 , G11C16/04 , H01L21/28 , H01L27/115 , H01L29/423 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28273 , G11C16/0416 , G11C2216/10 , H01L27/115 , H01L27/11521 , H01L27/11558 , H01L29/42324 , H01L29/7883
摘要： A nonvolatile memory device includes: a semiconductor layer of a first conductivity type in which a first region, a second region, and a third region are partitioned by an isolation insulating layer; a semiconductor section of a second conductivity type provided in the first region and functioning as a control gate; a semiconductor section of the first conductivity type provided in the second region; a semiconductor section of the second conductivity type provided in the third region; an insulating layer provided on the semiconductor layer in the first to third regions; a floating gate electrode provided on the insulating layer across the first to third regions; impurity regions of the first conductivity type provided on each side of the floating gate electrode in the first region; impurity regions of the second conductivity type provided on each side of the floating gate electrode in the second region and functioning as either a source region or a drain region; and impurity regions of the first conductivity type provided on each side of the floating gate electrode in the third region and functioning as either a source region or a drain region.
摘要翻译：非易失性存储器件包括：第一导电类型的半导体层，其中第一区域，第二区域和第三区域被隔离绝缘层分隔; 第二导电类型的半导体部分，设置在第一区域中并用作控制栅极; 设置在第二区域中的第一导电类型的半导体部分; 设置在第三区域中的第二导电类型的半导体部分; 设置在第一至第三区域的半导体层上的绝缘层; 在第一至第三区域上设置在绝缘层上的浮栅电极; 设置在第一区域中的浮置栅电极的每一侧上的第一导电类型的杂质区域; 第二导电类型的杂质区域设置在第二区域中的浮置栅电极的每一侧上并且用作源极区域或漏极区域; 以及设置在第三区域中的浮栅的每一侧上的第一导电类型的杂质区，并且用作源区或漏区。

39. 发明申请

US20050270366A1 Three-dimensional image display device 审中-公开
标题翻译：三维图像显示装置
公开(公告)号：US20050270366A1
公开(公告)日：2005-12-08
申请号：US11068763
申请日：2005-03-02
申请人： Rieko Fukushima , Hitoshi Kobayashi , Yuzo Hirayama , Kazuki Taira , Tatsuo Saishu , Yasunobu Yamauchi , Masahiro Sekine
发明人： Rieko Fukushima , Hitoshi Kobayashi , Yuzo Hirayama , Kazuki Taira , Tatsuo Saishu , Yasunobu Yamauchi , Masahiro Sekine
IPC分类号： H04N13/04 , G02B27/22 , G06F3/14 , G06T1/00 , H04N13/00
CPC分类号： H04N13/398 , H04N13/305 , H04N13/31
摘要： The present invention makes it possible to rapidly obtain a two-dimensional image which is not discontinuous and does not include distortion from three-dimensional image display data. When a two-dimensional image is displayed, a viewing point within a viewing zone is assumed, and a parallax image displayed on pixels positioned at a position where a line connecting the viewing point and an exit pupil, and the display unit cross each other or positioned in the vicinity thereof in a state that a three-dimensional image is displayed is developed and displayed within a corresponding elemental image including the pixels.
摘要翻译：本发明使得可以快速获得不间断的二维图像，并且不包括来自三维图像显示数据的失真。当显示二维图像时，假设观看区域内的观察点，并且显示在位于连接观察点和出射光瞳的线的位置的像素和显示单元彼此交叉的视差图像在显示三维图像的状态下将其定位在其附近，并且显示在包括像素的对应的基本图像内。

40. 发明授权

US06769466B2 Laminating apparatus and method for manufacturing laminated article 失效
标题翻译：层压制品的层压装置及其制造方法
公开(公告)号：US06769466B2
公开(公告)日：2004-08-03
申请号：US09990306
申请日：2001-11-23
申请人： Kiyotaka Osumi , Taku Yokozawa , Hitoshi Kobayashi , Yasushi Hori
发明人： Kiyotaka Osumi , Taku Yokozawa , Hitoshi Kobayashi , Yasushi Hori
IPC分类号： B26D526
CPC分类号： B32B37/223 , B32B37/0053 , B32B38/0004 , B32B38/162 , B32B38/1825 , B32B38/1875 , B32B41/00 , B32B2037/0061 , Y10T156/1795 , Y10T156/18
摘要： A laminating apparatus for laminating a film on a record medium includes a fixing unit for fixing a film onto a front side of a record medium, a feed unit for feeding the record medium to the fixing unit, a film introducing unit for directing the film to the fixing unit, and a conveying unit for conveying toward a discharge port the record medium and the film which are fixed together by the fixing unit. A cutter is disposed between the conveying unit and the discharge port and adapted to cut the film, and a control unit having a repeat mode is provided in which the conveying unit is stopped in a condition that a preceding record medium leaves the fixing unit and the feed unit is driven to feed a succeeding record medium toward the fixing unit. The fixing unit and the conveying unit are driven again before a leading end of the succeeding record medium reaches the fixing unit, while the succeeding record medium and the introduced film are fixed together as discharging the preceding record medium from the discharge port.
摘要翻译：用于在记录介质上层压膜的层压装置包括：用于将胶片固定到记录介质的前侧的定影单元，用于将记录介质供给到定影单元的进给单元，用于将胶片引导到固定单元和用于通过定影单元将由记录介质和胶片一起固定到排出口的输送单元。切割器设置在传送单元和排出口之间并且适于切割胶片，并且提供具有重复模式的控制单元，其中传送单元在先前的记录介质离开定影单元和进给单元被驱动以向定影单元馈送后续的记录介质。在后续的记录介质的前端到达定影单元之前，再次驱动定影单元和输送单元，同时将后续的记录介质和导入的膜一起固定在一起，从而将先前的记录介质从排出口排出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式