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31. 发明申请

US20050146908A1 Method for driving a switch in a power factor correction circuit and drive circuit 有权
标题翻译：用于驱动功率因数校正电路和驱动电路中的开关的方法
公开(公告)号：US20050146908A1
公开(公告)日：2005-07-07
申请号：US10998191
申请日：2004-11-24
申请人： Martin Feldtkeller
发明人： Martin Feldtkeller
IPC分类号： H02M1/00 , H02M1/42 , H02M7/00
CPC分类号： H02M1/4225 , Y02B70/126 , Y02P80/112
摘要： A method for driving a switch in a power factor correction circuit comprises the step of generating a switch-on level of a drive signal of the switch for a switch-on duration dependent on a control signal, and the step of generating a switch-off level of the drive signal after the switch-on time has elapsed. The method further comprises the step of detecting a predetermined storage state of an inductive energy storage element after the switch-on duration has elapsed. In addition, the method comprises waiting until the end of a waiting duration, which is at least approximately proportional to the time duration between the beginning of the switch-on level and the detection of the predetermined storage state, before a renewed generation of a switch-on level, the waiting duration being dependent on the control signal. A drive circuit is also disclosed for providing a drive signal according to the method.
摘要翻译：用于驱动功率因数校正电路中的开关的方法包括以下步骤：根据控制信号产生开关的驱动信号的接通电平，以及产生关断的步骤接通时间过后驱动信号的电平。该方法还包括在经过接通持续时间之后检测感应能量存储元件的预定存储状态的步骤。此外，该方法包括等待直到等待持续时间的结束，等待持续时间至少大致成比例地在接通电平开始和预定存储状态的检测之间的持续时间之前，在更新产生开关 - 等级，等待时间取决于控制信号。还公开了用于根据该方法提供驱动信号的驱动电路。

32. 发明申请

US20050104650A1 Method for switching driving of a semiconductor switching element 有权
标题翻译：用于切换半导体开关元件的驱动的方法
公开(公告)号：US20050104650A1
公开(公告)日：2005-05-19
申请号：US10959901
申请日：2004-10-06
申请人： Martin Feldtkeller
发明人： Martin Feldtkeller
IPC分类号： H03K4/00 , H03K17/16 , H03K17/687
CPC分类号： H03K17/163 , H03K4/00 , H03K17/166
摘要： The invention relates to a method for driving a semiconductor switching element whose switching state is a function of a charge stored on a drive electrode, and which comprises the method steps of: applying a drive signal for switching the semiconductor element, which is selected such that a change in the charge stored on the drive electrode occurs over time, signal parameters that define the time profile of the drive signal being permanently prescribed for the switching operation, determining an ideal switching instant of the semiconductor switching element with reference to the time profile of the drive signal or of a signal dependent thereon, determining whether the actual switching instant of the semiconductor switching element with reference to the time profile of the drive signal or of the signal dependent thereon deviates from the ideal switching instant, and changing at least one parameter of the drive signal for a next switching operation when a deviation has been determined.
摘要翻译：本发明涉及一种用于驱动半导体开关元件的方法，该半导体开关元件的开关状态是存储在驱动电极上的电荷的函数，并且包括以下方法步骤：施加用于切换半导体元件的驱动信号，该驱动信号被选择为使得存储在驱动电极上的电荷的变化随时间发生，限定驱动信号的时间曲线的信号参数被永久规定用于开关操作，参考时间曲线确定半导体开关元件的理想开关时刻所述驱动信号或取决于其的信号，确定所述半导体开关元件的实际切换时刻是否参考所述驱动信号或取决于其的信号的时间曲线偏离所述理想切换时刻，并且改变至少一个参数的下一个切换操作的驱动信号。

33. 发明申请

US20050017764A1 Drive circuit for a switch in a switching converter 失效
标题翻译：用于开关转换器中的开关的驱动电路
公开(公告)号：US20050017764A1
公开(公告)日：2005-01-27
申请号：US10861313
申请日：2004-06-04
申请人： Martin Feldtkeller
发明人： Martin Feldtkeller
IPC分类号： H02M1/08 , H02M3/335 , H03K5/153
CPC分类号： H02M1/08 , H02M3/33523 , H02M2001/0006
摘要： The invention relates to a drive circuit for providing a drive signal (S3) for a switch in a switching converter in a manner dependent on a control signal (S2), the drive circuit comprising at least two groups (22, 30) of circuit components, each group having at least one circuit component, and the circuit components being coupled to one another and designed to provide the drive signal (S3) from the control signal (S2). In this case, voltage is supplied to the circuit components of the first group by means of the control signal, while voltage is supplied to the circuit components of the second group (30) by means of a supply voltage at a supply terminal (K2).
摘要翻译：本发明涉及一种用于以取决于控制信号（S2）的方式为切换转换器中的开关提供驱动信号（S3）的驱动电路，所述驱动电路包括至少两组电路组件（22,30）每个组具有至少一个电路部件，并且电路部件彼此耦合并被设计成从控制信号（S2）提供驱动信号（S3）。在这种情况下，借助于控制信号将电压提供给第一组的电路部件，同时通过供电端子（K2）处的电源电压将电压提供给第二组（30）的电路部件，。

34. 发明授权

US06822399B2 Half-bridge circuit 有权
标题翻译：半桥电路
公开(公告)号：US06822399B2
公开(公告)日：2004-11-23
申请号：US10056767
申请日：2002-01-24
申请人： Martin Feldtkeller , Andreas Kiep
发明人： Martin Feldtkeller , Andreas Kiep
IPC分类号： H05B3700
CPC分类号： H01L24/06 , H01L23/49562 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/05599 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01015 , H01L2924/01023 , H01L2924/01041 , H01L2924/0105 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： A half-bridge circuit includes: a vertically designed n-conducting first MOS transistor that is integrated in a first semiconductor body having a front side and a rear side; and a vertically designed p-conducting second MOS transistor that is integrated in a second semiconductor body having a front side and a rear side. The first and second transistors are connected in series between a first connection terminal and a second connection terminal. The half-bridge circuit also includes a drive circuit for driving the first and second transistors. The first and second transistors are applied to a common connection plate.
摘要翻译：半桥电路包括：垂直设计的n导体第一MOS晶体管，其集成在具有前侧和后侧的第一半导体本体中; 以及集成在具有前侧和后侧的第二半导体本体中的垂直设计的p导电的第二MOS晶体管。第一和第二晶体管串联连接在第一连接端子和第二连接端子之间。半桥电路还包括用于驱动第一和第二晶体管的驱动电路。第一和第二晶体管被施加到公共连接板。

35. 发明授权

US06735095B2 Switched-mode power supply with a function for detecting a broken feedback loop 有权
标题翻译：开关电源具有检测断路反馈回路的功能
公开(公告)号：US06735095B2
公开(公告)日：2004-05-11
申请号：US10330947
申请日：2002-12-27
申请人： Marc Fahlenkamp , Hartmut Jasberg , Martin Feldtkeller , Harald Zoellinger
发明人： Marc Fahlenkamp , Hartmut Jasberg , Martin Feldtkeller , Harald Zoellinger
IPC分类号： H02M3335
CPC分类号： H02M1/32 , H02M3/33523
摘要： A switched mode power supply includes a primary coil, a switch element, a secondary circuit, and a control circuit. The switch element is wired in series with the primary coil, for applying a DC voltage to the primary coil according to a control signal. The secondary circuit is coupled to the primary coil with output terminals providing an output voltage. The control circuit prepares the control signal with a feedback signal dependent on the output voltage supplied to the control circuit. The control circuit includes a signal generation circuit to create the control signal and a protection circuit. The protection circuit has the effect that no control signal is delivered to the switch element, if the feedback signal reaches the value of a first reference signal after a first period after starting the control circuit.
摘要翻译：开关电源包括初级线圈，开关元件，次级电路和控制电路。开关元件与初级线圈串联，用于根据控制信号向初级线圈施加直流电压。次级电路耦合到初级线圈，输出端提供输出电压。控制电路根据提供给控制电路的输出电压，使控制信号具有反馈信号。控制电路包括产生控制信号的信号发生电路和保护电路。如果反馈信号在启动控制电路的第一个周期之后达到第一参考信号的值，则保护电路具有不将控制信号传送到开关元件的效果。

36. 发明授权

US06320733B1 Pulse-width modulator for controlling a semiconductor circuit breaker 有权
标题翻译：用于控制半导体断路器的脉宽调制器
公开(公告)号：US06320733B1
公开(公告)日：2001-11-20
申请号：US09383871
申请日：1999-08-26
申请人： Martin Feldtkeller
发明人： Martin Feldtkeller
IPC分类号： H02H318
CPC分类号： H02M3/33507 , Y10T307/865
摘要： A pulse-width modulator for controlling a semiconductor circuit-breaker in a switched-mode power supply has a comparator circuit for generating control pulses determined by an oscillator signal. Whereby a duration of the individual control pulses depends on a first control signal and a second control signal. A measuring configuration is provided for generating a load-current signal that is dependent on a load current of the circuit-breaker. Furthermore, the modulator has a feedback branch for feeding back the load-current signal to the comparator circuit whereby the feedback branch has a low-pass configuration. The low-pass configuration has an input which receives the load-current signal and an output at which the second control signal can be picked off.
摘要翻译：用于控制开关型电源中的半导体断路器的脉冲宽度调制器具有用于产生由振荡器信号确定的控制脉冲的比较器电路。由此，各个控制脉冲的持续时间取决于第一控制信号和第二控制信号。提供测量配置用于产生取决于断路器的负载电流的负载电流信号。此外，调制器具有用于将负载电流信号反馈到比较器电路的反馈分支，由此反馈分支具有低通配置。低通配置具有接收负载电流信号的输入和可以拾取第二控制信号的输出。

37. 发明授权

US09019005B2 Voltage regulating circuit 有权
标题翻译：电压调节电路
公开(公告)号：US09019005B2
公开(公告)日：2015-04-28
申请号：US13535399
申请日：2012-06-28
申请人： Martin Feldtkeller
发明人： Martin Feldtkeller
IPC分类号： G05F1/10 , G05F1/595 , G05F1/46
CPC分类号： G05F1/56 , G05F1/46 , G05F1/575 , G05F1/595
摘要： In various embodiments, a circuit is provided including a supply terminal, a logic circuit, an inverter and a control transistor which may include a body region, first and second source/drain regions, a gate insulating region having a layer thickness and a gate region. The first source/drain region may be coupled to the supply terminal. The logic circuit may have an internal supply terminal connected to the second source/drain region of the control transistor and a plurality of transistors each having a gate insulating region having a second layer thickness. The inverter input may be coupled to the internal supply terminal of the logic circuit and the output to the gate region of the control transistor. The inverter may include a transistor with a gate insulating region having a third layer thickness substantially equal to the first and second layer thicknesses.
摘要翻译：在各种实施例中，提供一种电路，其包括供电端子，逻辑电路，反相器和控制晶体管，其可以包括主体区域，第一和第二源极/漏极区域，具有层厚度的栅极绝缘区域和栅极区域。第一源极/漏极区域可以耦合到电源端子。逻辑电路可以具有连接到控制晶体管的第二源极/漏极区域的内部电源端子和各自具有具有第二层厚度的栅极绝缘区域的多个晶体管。反相器输入可以耦合到逻辑电路的内部电源端子，并且输出到控制晶体管的栅极区域。反相器可以包括晶体管，栅极绝缘区具有基本上等于第一和第二层厚度的第三层厚度。

38. 发明授权

US08853776B2 Power transistor with controllable reverse diode 有权
标题翻译：功率晶体管具有可控反向二极管
公开(公告)号：US08853776B2
公开(公告)日：2014-10-07
申请号：US13238576
申请日：2011-09-21
申请人： Franz Hirler , Lutz Goergens , Martin Feldtkeller
发明人： Franz Hirler , Lutz Goergens , Martin Feldtkeller
IPC分类号： H01L29/772 , H01L29/739 , H01L29/78 , H01L29/06 , H01L29/40 , H01L29/417
CPC分类号： H01L29/0623 , H01L29/0696 , H01L29/407 , H01L29/41766 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L29/7397 , H01L29/7803 , H01L29/7806 , H01L29/7813 , H01L29/7817 , H01L29/782 , H01L29/7828 , H01L29/7831 , H01L29/7832 , H01L2924/0002 , H01L2924/00
摘要： An electronic circuit includes a transistor device that can be operated in a reverse operation mode and a control circuit. The transistor device includes a source region, a drain region, a body region and a drift region, a source electrode electrically connected to the source region, a pn junction formed between the body region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region, and a depletion control structure adjacent the drift region. The depletion control structure has a control terminal and is configured to generate a depletion region in the drift region dependent on a drive signal received at the control terminal. The control circuit is coupled to the control terminal of the depletion control structure and configured to drive the depletion control structure to generate the depletion region when the transistor device is operated in the reverse operation mode.
摘要翻译：电子电路包括可以以反向操作模式操作的晶体管器件和控制电路。晶体管器件包括源极区域，漏极区域，体区域和漂移区域，与源极区域电连接的源极电极，在体区域和漂移区域之间形成的pn结，邻近体区域的栅电极并且与身体区域介电绝缘，以及与漂移区域相邻的耗尽控制结构。耗尽控制结构具有控制端子，并且被配置成取决于在控制端子处接收到的驱动信号而在漂移区域中产生耗尽区域。控制电路耦合到耗尽控制结构的控制端，并且被配置为当晶体管器件以反向操作模式工作时驱动耗尽控制结构以产生耗尽区。

39. 发明申请

US20130069710A1 POWER TRANSISTOR WITH CONTROLLABLE REVERSE DIODE 有权
标题翻译：具有可控逆转二极管的功率晶体管
公开(公告)号：US20130069710A1
公开(公告)日：2013-03-21
申请号：US13238576
申请日：2011-09-21
申请人： Franz Hirler , Lutz Goergens , Martin Feldtkeller
发明人： Franz Hirler , Lutz Goergens , Martin Feldtkeller
IPC分类号： H03K3/313
CPC分类号： H01L29/0623 , H01L29/0696 , H01L29/407 , H01L29/41766 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L29/7397 , H01L29/7803 , H01L29/7806 , H01L29/7813 , H01L29/7817 , H01L29/782 , H01L29/7828 , H01L29/7831 , H01L29/7832 , H01L2924/0002 , H01L2924/00
摘要： An electronic circuit includes a transistor device that can be operated in a reverse operation mode and a control circuit. The transistor device includes a source region, a drain region, a body region and a drift region, a source electrode electrically connected to the source region, a pn junction formed between the body region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region, and a depletion control structure adjacent the drift region. The depletion control structure has a control terminal and is configured to generate a depletion region in the drift region dependent on a drive signal received at the control terminal. The control circuit is coupled to the control terminal of the depletion control structure and configured to drive the depletion control structure to generate the depletion region when the transistor device is operated in the reverse operation mode.
摘要翻译：电子电路包括可以以反向操作模式操作的晶体管器件和控制电路。晶体管器件包括源极区域，漏极区域，体区域和漂移区域，与源极区域电连接的源极电极，在体区域和漂移区域之间形成的pn结，邻近体区域的栅电极并且与身体区域介电绝缘，以及与漂移区域相邻的耗尽控制结构。耗尽控制结构具有控制端子，并且被配置成取决于在控制端子处接收到的驱动信号而在漂移区域中产生耗尽区域。控制电路耦合到耗尽控制结构的控制端，并且被配置为当晶体管器件以反向操作模式工作时驱动耗尽控制结构以产生耗尽区。

40. 发明授权

US08125202B2 Protection circuit for protecting a half-bridge circuit 有权
标题翻译：保护半桥电路的保护电路
公开(公告)号：US08125202B2
公开(公告)日：2012-02-28
申请号：US12195445
申请日：2008-08-21
申请人： Martin Feldtkeller , Dieter Zipprick
发明人： Martin Feldtkeller , Dieter Zipprick
IPC分类号： G05F1/40
CPC分类号： H02M1/32 , H02H7/1225
摘要： The present invention relates to a protection circuit for protecting a half-bridge circuit. The protection circuit detects an incorrect response of the half-bridge by monitoring the current of a first switch at a series resistor of a second switch.The protection circuit has a detector for detecting the voltage across the resistor and an evaluation circuit which is designed in such a manner that it evaluates an output signal from the detector after the first switch has been switched on and provides a fault signal at an output when the voltage across the resistor is greater than the threshold voltage.
摘要翻译：本发明涉及一种用于保护半桥电路的保护电路。保护电路通过监视第二开关的串联电阻器上的第一开关的电流来检测半桥的不正确响应。保护电路具有用于检测电阻器两端的电压的检测器和评估电路，其被设计成在第一开关被接通之后评估来自检测器的输出信号，并在输出端提供故障信号电阻两端的电压大于阈值电压。

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