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31. 发明授权

US07122451B2 Method for fabricating a semiconductor device including exposing a group III-V semiconductor to an ammonia plasma 有权
标题翻译：一种用于制造半导体器件的方法，包括将III-V族半导体暴露于氨等离子体
公开(公告)号：US07122451B2
公开(公告)日：2006-10-17
申请号：US10785944
申请日：2004-02-26
申请人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
发明人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
IPC分类号： H01L21/26 , H01L21/28 , H01L21/44
CPC分类号： H01L29/66878 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/66462 , H01L29/8126
摘要： A semiconductor device has an active region composed of a group III–V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.
摘要翻译：半导体器件具有由III-V族氮化物半导体和欧姆电极构成的有源区域和分别形成在有源区域上的栅电极。有源区域的整个表面暴露于等离子体，使得其中的电子的表面电位低于整个表面不暴露于等离子体的情况。

32. 发明授权

US07037817B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US07037817B2
公开(公告)日：2006-05-02
申请号：US10889028
申请日：2004-07-13
申请人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
发明人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
IPC分类号： H01L21/4763
CPC分类号： H01L29/513 , H01L21/28264 , H01L29/20 , H01L29/2003 , H01L29/517 , H01L29/518 , H01L29/78
摘要： A semiconductor device has a first semiconductor layer composed of a group III–V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III–V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating film formed on the oxide film to have a composition different from the composition of the oxide film, and a gate electrode formed on the insulating film.

33. 发明授权

US06998603B2 Image forming apparatus, optical writing device, and controlling method thereof 失效
标题翻译：图像形成装置，光学写入装置及其控制方法
公开(公告)号：US06998603B2
公开(公告)日：2006-02-14
申请号：US10653893
申请日：2003-09-04
申请人： Yoshito Ikeda
发明人： Yoshito Ikeda
IPC分类号： H01J3/14 , H01J40/14 , H01J5/16
CPC分类号： B41J2/473 , G06K15/1214 , H04N1/053 , H04N1/1135 , H04N2201/0471 , H04N2201/04729 , H04N2201/04732 , H04N2201/04744
摘要： An image forming apparatus is disclosed that is capable of making it simple to initialize a laser system thereof. The image forming apparatus includes a first photo detector that detects a part of a laser beam from each of the lasers and generates respective power adjustment signals for the lasers, a second photo detector that detects another part of the scanning laser beam of each of the lasers and generates a synchronization signal corresponding to each laser, and a power adjustment control unit that changes the output power of each of the lasers to a predetermined value. During the adjustment of output powers of the lasers, the power of a laser is monitored by using the synchronization signal. The power adjustment control unit turns on a laser for power adjustment, and turns off the laser when the scanning synchronization signal is detected twice to complete the power adjustment of the laser, and then starts power adjustment of the next laser.
摘要翻译：公开了能够使初始化其激光系统变得简单的图像形成装置。图像形成装置包括：第一光电检测器，其检测来自每个激光器的激光束的一部分，并产生用于激光器的相应的功率调节信号;第二光电检测器，其检测每个激光器的扫描激光束的另一部分并产生对应于每个激光器的同步信号，以及功率调节控制单元，其将每个激光器的输出功率改变为预定值。在调整激光器的输出功率期间，通过使用同步信号来监视激光器的功率。功率调节控制单元打开用于功率调节的激光器，并且当检测到扫描同步信号两次以完成激光器的功率调整时关闭激光器，然后开始下一个激光器的功率调节。

34. 发明授权

US06879334B2 Image forming apparatus capable of controlling write start position of each beam 失效
标题翻译：能够控制每个光束的写入开始位置的图像形成装置
公开(公告)号：US06879334B2
公开(公告)日：2005-04-12
申请号：US10279558
申请日：2002-10-25
申请人： Yoshito Ikeda
发明人： Yoshito Ikeda
IPC分类号： B41J2/44 , G02B26/10 , G02B26/12 , H04N1/036 , H04N1/053 , H04N1/113 , H04N1/191 , B41J2/435
CPC分类号： H04N1/053 , H04N1/1135 , H04N1/1911 , H04N2201/02439 , H04N2201/0471 , H04N2201/04732 , H04N2201/04744 , H04N2201/04784 , H04N2201/04786 , H04N2201/04794
摘要： An image forming apparatus shifts a scanning position on a surface scanned of each of a plurality of optical beams in a main scanning direction and a sub-scanning direction, and scans a plurality of lines simultaneously in the main scanning direction by a deflecting part. A synchronization detecting sensor detects the plurality of optical beams. A counting part counts a clock having a higher frequency than a dot clock in an interval between a synchronization detection point of a first beam and a synchronization detection point of a second beam, the first and second beams being included in the optical beams detected by the synchronization detecting sensor. A determining part determines a starting position of writing for each of the plurality of optical beams based on a counted value counted by the counting part. A writing part writes each dot from the starting position of each of the plurality of optical beams determined by the determining part, according to the clock having the higher frequency than the dot clock.
摘要翻译：图像形成装置在主扫描方向和副扫描方向上移动在多个光束中扫描的表面上的扫描位置，并且通过偏转部在主扫描方向上同时扫描多条线。同步检测传感器检测多个光束。在第一光束的同步检测点和第二光束的同步检测点之间的间隔中，计数部分对具有比点时钟更高的频率的时钟进行计数，第一和第二光束被包括在由同步检测传感器。确定部分基于由计数部件计数的计数值来确定多个光束中的每一个的写入的开始位置。写入部分根据具有比点时钟频率高的时钟从每个确定部分确定的多个光束的起始位置写入每个点。

35. 发明授权

US06774449B1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06774449B1
公开(公告)日：2004-08-10
申请号：US09664555
申请日：2000-09-18
申请人： Katsunori Nishii , Yoshito Ikeda , Hiroyuki Masato , Kaoru Inoue
发明人： Katsunori Nishii , Yoshito Ikeda , Hiroyuki Masato , Kaoru Inoue
IPC分类号： H01L3100
CPC分类号： H01L29/475 , H01L21/28581 , H01L29/2003 , H01L29/66856 , H01L29/66863 , H01L29/812 , H01L33/32 , H01L33/40
摘要： The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.
摘要翻译：本发明的半导体器件包括：氮化镓（GaN）化合物半导体层; 和形成在GaN化合物半导体层上的肖特基电极，其中肖特基电极含有硅。

36. 发明授权

US06737683B2 Semiconductor device composed of a group III-V nitride semiconductor 有权
标题翻译：由III-V族氮化物半导体构成的半导体装置
公开(公告)号：US06737683B2
公开(公告)日：2004-05-18
申请号：US10372079
申请日：2003-02-25
申请人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
发明人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
IPC分类号： H01L310328
CPC分类号： H01L29/66878 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/66462 , H01L29/8126
摘要： A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.
摘要翻译：半导体器件具有由III-V族氮化物半导体和欧姆电极构成的有源区域和分别形成在有源区域上的栅电极。有源区域的整个表面暴露于等离子体，使得其中的电子的表面电位低于整个表面不暴露于等离子体的情况。

37. 发明授权

US06593193B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US06593193B2
公开(公告)日：2003-07-15
申请号：US10054843
申请日：2002-01-25
申请人： Katsunori Nishii , Kaoru Inoue , Toshinobu Matsuno , Yoshito Ikeda , Hiroyuki Masato
发明人： Katsunori Nishii , Kaoru Inoue , Toshinobu Matsuno , Yoshito Ikeda , Hiroyuki Masato
IPC分类号： H01L21336
CPC分类号： H01L29/66462 , H01L21/28264 , H01L29/2003 , H01L29/7783
摘要： An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.

38. 发明授权

US06312840B1 Magnetic tunneling element and manufacturing method therefor 失效
标题翻译：磁性隧道元件及其制造方法
公开(公告)号：US06312840B1
公开(公告)日：2001-11-06
申请号：US09397069
申请日：1999-09-16
申请人： Seiji Kumagai , Eiji Nakashio , Junichi Sugawara , Yoshito Ikeda
发明人： Seiji Kumagai , Eiji Nakashio , Junichi Sugawara , Yoshito Ikeda
IPC分类号： B32B1900
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/332 , G11B5/3903 , G11B2005/3996 , H01F10/3254 , H01F41/307 , H01L43/08 , Y10S428/90 , Y10T428/1114 , Y10T428/1193
摘要： A magnetic tunnelling element in which the tunnel current flows reliably in an insulating layer to exhibit a stable magnetic tunnelling effect. To this end, the magnetic tunnelling element at least includes a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer and a second magnetic layer formed on the tunnel barrier layer. The tunnel current flows via the tunnel barrier layer between the first magnetic metal layer and the second magnetic metal layer. The surface of the first magnetic layer carrying the tunnel barrier layer has a surface roughness (Ra) of 0.3 nm or less.
摘要翻译：一种磁隧道元件，其中隧道电流在绝缘层中可靠地流动以呈现稳定的磁隧道效应。为此，磁隧道元件至少包括第一磁性层，形成在第一磁性层上的隧道势垒层和形成在隧道势垒层上的第二磁性层。隧道电流通过第一磁性金属层和第二磁性金属层之间的隧道势垒层流动。携带隧道势垒层的第一磁性层的表面的表面粗糙度（Ra）为0.3nm以下。

39. 发明授权

US5515222A Magnetic head core arrangement having medium facing surface sides formed of single-crystal ferrite 失效
标题翻译：具有由单晶铁素体形成的具有介质相对表面侧的磁头芯布置
公开(公告)号：US5515222A
公开(公告)日：1996-05-07
申请号：US235798
申请日：1994-04-29
申请人： Seiji Kumagai , Junichi Honda , Yoshitomo Ito , Masatoshi Hayakawa , Toru Matsunaga , Mineo Yorizumi , Yoshito Ikeda
发明人： Seiji Kumagai , Junichi Honda , Yoshitomo Ito , Masatoshi Hayakawa , Toru Matsunaga , Mineo Yorizumi , Yoshito Ikeda
IPC分类号： G11B5/127 , G11B5/133 , G11B5/23 , G11B5/187
CPC分类号： G11B5/133
摘要： In a magnetic head having a pair of magnetic cores defining a magnetic gap in-between, a side of each magnetic core facing a recording medium is formed of a single-crystal ferrite, with the remaining portions of each magnetic core being formed of poly-crystal ferrite. The surface of the magnetic core facing the recording medium and the abutment surface of the magnetic core are the {100} plane and the {100} plane of the single-crystal ferrite, respectively. The magnetic head has excellent abrasion resistance and electro-magnetic conversion characteristics.
摘要翻译：在具有在其间限定有磁隙的一对磁芯的磁头中，每个磁芯的与记录介质相对的一侧由单晶铁氧体形成，其中每个磁芯的其余部分由聚 - 晶体铁素体。面向记录介质的磁芯的表面和磁芯的邻接表面分别是单晶铁氧体的{100}面和{100}面。磁头具有优异的耐磨性和电磁转换特性。

40. 发明授权

US09627128B2 Antenna module, communication device and method of manufacturing antenna module 有权
公开(公告)号：US09627128B2
公开(公告)日：2017-04-18
申请号：US13824860
申请日：2011-12-28
申请人： Norio Saito , Katsuhisa Orihara , Yoshito Ikeda , Satoru Sugita
发明人： Norio Saito , Katsuhisa Orihara , Yoshito Ikeda , Satoru Sugita
IPC分类号： H01F38/14 , H01F41/071 , H01Q1/22 , H01Q7/00 , H01Q7/08 , H01Q1/24
CPC分类号： H01F38/14 , H01F41/071 , H01Q1/2216 , H01Q1/243 , H01Q7/00 , H01Q7/08 , Y10T29/49018
摘要： A communication device that, when incorporated in an electronic device, can reduce the size and the thickness of a housing of the electronic device while maintaining communication characteristics. The communication device includes an antenna coil that is arranged on a peripheral part of a housing surface facing a reader-writer of a mobile phone, a magnetic sheet that attracts the magnetic filed transmitted from the reader-writer to the antenna coil, and a communication processing unit that is driven by a current flowing through the antenna coil and communicates with the reader-writer. The magnetic sheet is arranged to be closer to reader-writer than the antenna coil in the central part, and the antenna coil is arranged to be closer to the reader-writer on the outer periphery side, and at least a part of the conductive line of the antenna coil is superimposed in a direction orthogonal to a circuit board.

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