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31. 发明申请

US20050134857A1 Method to monitor silicide formation on product wafers 审中-公开
标题翻译：监测产品晶圆上硅化物形成的方法
公开(公告)号：US20050134857A1
公开(公告)日：2005-06-23
申请号：US10742986
申请日：2003-12-22
申请人： Alvaro Maury , Nace Layadi , Jovin Lim
发明人： Alvaro Maury , Nace Layadi , Jovin Lim
IPC分类号： G01N21/17 , G01R31/28 , H01L21/66 , G01N21/00 , G01R31/26
CPC分类号： G01R31/2831 , G01N21/1717
摘要： A new method to monitor sheet resistance of a metal silicide layer in the manufacture of an integrated circuit device is achieved. The method comprises providing a metal silicide layer overlying an exposed silicon layer on a substrate. A thermal wave intensity signal is generated for the metal silicide layer by an optical measurement system. The optical measurement system comprises a first laser beam that is intensity modulated and a second laser beam. The first and second laser beams comprise different wavelengths. A dichroic mirror is used to combine the first and second laser beams and to project the first and second laser beams onto the metal silicide layer. A detector is used to gather the second laser beam reflected from the metal silicide layer and to generate a thermal wave intensity signal based on the reflected second laser beam. Sheet resistance of the metal silicide layer is calculated by a linear equation based on the thermal wave intensity signal.
摘要翻译：实现了在制造集成电路器件时监测金属硅化物层的薄层电阻的新方法。该方法包括提供覆盖衬底上暴露的硅层的金属硅化物层。通过光学测量系统为金属硅化物层产生热波强度信号。光学测量系统包括强度调制的第一激光束和第二激光束。第一和第二激光束包括不同的波长。分色镜用于组合第一和第二激光束并将第一和第二激光束投影到金属硅化物层上。检测器用于收集从金属硅化物层反射的第二激光束，并产生基于反射的第二激光束的热波强度信号。通过基于热波强度信号的线性方程来计算金属硅化物层的薄层电阻。

32. 发明授权

US06548906B2 Method for reducing a metal seam in an interconnect structure and a device manufactured thereby 有权
标题翻译：用于减少互连结构中的金属接缝的方法和由此制造的器件
公开(公告)号：US06548906B2
公开(公告)日：2003-04-15
申请号：US09935241
申请日：2001-08-22
申请人： Nace Layadi , Alvaro Maury
发明人： Nace Layadi , Alvaro Maury
IPC分类号： H01L2348
CPC分类号： H01L21/76877 , H01L21/76847 , H01L23/485 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method of manufacturing an interconnect structure. The method may include forming a nucleation layer, including a first metal, over a barrier layer and within an opening formed in a dielectric layer, forming an intermediate layer, including a second metal such as titanium nitride, over the nucleation layer and within the opening, and forming a plug portion layer, including the first metal, over the intermediate layer and within the opening. The first metal may be tungsten and the second metal may be a titanium nitride layer.
摘要翻译：本发明提供一种制造互连结构的方法。该方法可以包括在阻挡层上形成包含第一金属的成核层，并在形成于电介质层中的开口内形成包括第二金属如氮化钛在内的中间层，并在开口内并且在中间层之上和开口内形成包括第一金属的塞子部分层。第一金属可以是钨，第二金属可以是氮化钛层。

33. 发明授权

US06354910B1 Apparatus and method for in-situ measurement of polishing pad thickness loss 有权
标题翻译：用于现场测量抛光垫厚度损失的装置和方法
公开(公告)号：US06354910B1
公开(公告)日：2002-03-12
申请号：US09494705
申请日：2000-01-31
申请人： Richardson O. Adebanjo , William Graham Easter , Alvaro Maury , Frank Miceli , Jose Omar Rodriguez
发明人： Richardson O. Adebanjo , William Graham Easter , Alvaro Maury , Frank Miceli , Jose Omar Rodriguez
IPC分类号： B24B4900
CPC分类号： B24B37/11 , B24B49/02 , B24B53/017
摘要： A non-destructive method for measuring the thickness loss of a polishing pad due to pad conditioning includes the use of rigid planar members placed on the surfaces of both the conditioned and non-conditioned sections of the polishing pad. Measurements are made using measurement instruments which overhang the depressed conditioned section and measure the height difference between the upper surfaces of the planar members. The measurement instruments may be repositioned and measurements repeated to obtain an average thickness loss.
摘要翻译：用于测量由于衬垫调节引起的抛光垫的厚度损失的非破坏性方法包括使用放置在抛光垫的调理部分和非调节部分的表面上的刚性平面部件。使用测量仪器进行测量，该测量仪器伸出凹陷的调节部分并测量平面部件的上表面之间的高度差。可以重新定位测量仪器并重复测量以获得平均厚度损失。

34. 发明授权

US06287173B1 Longer lifetime warm-up wafers for polishing systems 失效
标题翻译：抛光系统寿命更长的预热晶圆
公开(公告)号：US06287173B1
公开(公告)日：2001-09-11
申请号：US09481236
申请日：2000-01-11
申请人： Annette Margaret Crevasse , William Graham Easter , Alvaro Maury , John Albert Maze , Frank Miceli
发明人： Annette Margaret Crevasse , William Graham Easter , Alvaro Maury , John Albert Maze , Frank Miceli
IPC分类号： B24B53007
CPC分类号： B24B37/042
摘要： A method for preparing a chemical mechanical polishing apparatus for polishing product substrates includes polishing designated “warm-up” substrates until polishing pad characteristics have achieved steady state conditions. The reusable warm-up substrates may be formed of a mechanically resistant material or a material having substantially the same removal characteristic as the product film to be polished. The reusable warm-up substrates may also be formed of a mechanically resistant film formed over a semiconductor substrate. The polishing pad characteristic of pad compression may be determined using a previously established correlation or it may be measured.
摘要翻译：制备用于抛光产品基板的化学机械抛光装置的方法包括抛光指定的“预热”基板，直到抛光垫特性已经达到稳定状态。可重复使用的预热基板可以由机械抵抗材料或具有与待抛光的产品膜具有基本相同的去除特性的材料形成。可重复使用的预热基板也可以由在半导体衬底上形成的机械抵抗膜形成。可以使用先前建立的相关性来确定衬垫压缩的抛光垫特性，或者可以测量。

35. 发明授权

US4814291A Method of making devices having thin dielectric layers 失效
标题翻译：制造具有薄介电层的器件的方法
公开(公告)号：US4814291A
公开(公告)日：1989-03-21
申请号：US833884
申请日：1986-02-25
申请人： Sea-Chung Kim , Alvaro Maury , William H. Stinebaugh, Jr.
发明人： Sea-Chung Kim , Alvaro Maury , William H. Stinebaugh, Jr.
IPC分类号： H01L21/316 , H01L21/28 , H01L21/321 , H01L21/70
CPC分类号： H01L21/32105 , Y10S438/966
摘要： Certain devices require a high quality thin (
摘要翻译：某些器件需要在沉积的硅层上形成的高质量薄（<25纳米）的介电层。应用包括动态存储器和线性器件中的电容电介质。在另一应用中，电可擦除可编程只读存储器（EEPROM）在写入门和浮置栅极之间使用SiO 2层。本技术在抑制晶粒生长的条件下氧化非晶硅，以产生比通过多晶硅的常规炉氧化获得的更高质量的氧化物。快速热氧化是实施该技术的一种方法。

36. 发明授权

US4569722A Ethylene glycol etch for processes using metal silicides 失效
标题翻译：用于使用金属硅化物的方法的乙二醇蚀刻
公开(公告)号：US4569722A
公开(公告)日：1986-02-11
申请号：US674421
申请日：1984-11-23
申请人： Alvaro Maury , Louis C. Parrillo
发明人： Alvaro Maury , Louis C. Parrillo
IPC分类号： H01L21/306 , C23F1/00 , H01L21/311 , H01L21/3213 , H01L21/768 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/76889 , H01L21/31111 , H01L21/32134
摘要： A novel etchant which comprises a mixture of ethylene glycol and hydrofluoric acid, preferably buffered hydrofluoric acid, has been found to control the etch rate of refractory metal silicides, in particular titanium silicide, in a manner such that titanium silicide may be used in place of tantalum silicide for interconnects and gates in semiconductor integrated circuits.
摘要翻译：已经发现包含乙二醇和氢氟酸，优选缓冲氢氟酸的混合物的新颖蚀刻剂可以以使得可以使用硅化钛来代替难熔金属硅化物的蚀刻速率来控制难熔金属硅化物，特别是硅化钛的蚀刻速率。用于半导体集成电路中的互连和栅极的硅化钽。

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