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31. 发明授权

US07327540B2 Hard biased materials for recording head applications 失效
标题翻译：用于记录头应用的硬偏置材料
公开(公告)号：US07327540B2
公开(公告)日：2008-02-05
申请号：US10858029
申请日：2004-06-01
申请人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127 , G11B5/39
CPC分类号： G11B5/39 , Y10T428/11 , Y10T428/115
摘要： A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and does not require a seed layer to achieve an ordered structure. The FePtCu layer is annealed at a temperature of about 280° C. and has an Hc value more than double that of a conventional CoCrPt hard bias layer with a similar thickness. Since the FePtCu hard bias layer adjoins a free layer, it has a higher sensor edge pinning efficiency than a configuration with a CoCrPt layer on a seed layer. The novel hard bias layer is compatible with either a top or bottom spin valve structure in a GMR sensor.
摘要翻译：公开了与GMR元件中的自由层形成邻接连接并由FePtCu或FePtCuX组成的硬偏置层，其中X是B，C，O，Si或N。 FePtCu层具有约45原子％Fe，45原子％Pt和10原子％Cu的组成，并且不需要种子层来实现有序结构。 FePtCu层在约280℃的温度下进行退火，并且其Hc值大于具有相似厚度的常规CoCrPt硬偏压层的Hc值的两倍以上。由于FePtCu硬偏置层与自由层相邻，因此与种子层上的CoCrPt层的配置相比，传感器边缘钉扎效率更高。新颖的硬偏置层与GMR传感器中的顶部或底部自旋阀结构兼容。

32. 发明授权

US07275304B2 Method of forming a hard bias structure in a magnetic head 失效
标题翻译：在磁头中形成硬偏置结构的方法
公开(公告)号：US07275304B2
公开(公告)日：2007-10-02
申请号：US11074244
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

33. 发明申请

US20060198059A1 Novel abutted exchange bias design for sensor stabilization 失效
公开(公告)号：US20060198059A1
公开(公告)日：2006-09-07
申请号：US11074270
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3932
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

34. 发明申请

US20050264957A1 Hard biased materials for recording head applications 失效
标题翻译：用于记录头应用的硬偏置材料
公开(公告)号：US20050264957A1
公开(公告)日：2005-12-01
申请号：US10858029
申请日：2004-06-01
申请人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G11B5/39 , Y10T428/11 , Y10T428/115
摘要： A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and does not require a seed layer to achieve an ordered structure. The FePtCu layer is annealed at a temperature of about 280° C. and has an Hc value more than double that of a conventional CoCrPt hard bias layer with a similar thickness. Since the FePtCu hard bias layer adjoins a free layer, it has a higher sensor edge pinning efficiency than a configuration with a CoCrPt layer on a seed layer. The novel hard bias layer is compatible with either a top or bottom spin valve structure in a GMR sensor.
摘要翻译：公开了与GMR元件中的自由层形成邻接连接并由FePtCu或FePtCuX组成的硬偏置层，其中X是B，C，O，Si或N。 FePtCu层具有约45原子％Fe，45原子％Pt和10原子％Cu的组成，并且不需要种子层来实现有序结构。 FePtCu层在约280℃的温度下进行退火，并且其Hc值大于具有相似厚度的常规CoCrPt硬偏压层的Hc值的两倍以上。由于FePtCu硬偏置层与自由层相邻，因此与种子层上的CoCrPt层的配置相比，传感器边缘钉扎效率更高。新颖的硬偏置层与GMR传感器中的顶部或底部自旋阀结构兼容。

35. 发明授权

US07283337B2 Abutted exchange bias design for sensor stabilization 失效
标题翻译：传感器稳定的基准交换偏置设计
公开(公告)号：US07283337B2
公开(公告)日：2007-10-16
申请号：US11074270
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： G11B5/3932
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

36. 发明申请

US20090009907A1 Laminated film for head applications 有权
标题翻译：用于头部应用的层压膜
公开(公告)号：US20090009907A1
公开(公告)日：2009-01-08
申请号：US11825034
申请日：2007-07-03
申请人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
发明人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
IPC分类号： G11B5/127 , G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278
摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).
摘要翻译：公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。使用最上层的Ru层作为CMP停止层。可以采用后退火工艺来进一步降低各向异性场（Hk）。

37. 发明授权

US07773341B2 Laminated film for head applications 有权
标题翻译：用于头部应用的层压膜
公开(公告)号：US07773341B2
公开(公告)日：2010-08-10
申请号：US11825034
申请日：2007-07-03
申请人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
发明人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
IPC分类号： G11B5/33
CPC分类号： G11B5/3116 , G11B5/1278
摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).
摘要翻译：公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。使用最上层的Ru层作为CMP停止层。可以采用后退火工艺来进一步降低各向异性场（Hk）。

38. 发明授权

US09021685B2 Two step annealing process for TMR device with amorphous free layer 有权
公开(公告)号：US09021685B2
公开(公告)日：2015-05-05
申请号：US12075605
申请日：2008-03-12
申请人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
发明人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
IPC分类号： G11B5/127 , G11B5/39 , B82Y10/00 , B82Y25/00 , G01R33/09 , G11B5/31 , G11C11/16 , H01L43/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11C11/16 , G11C11/161 , H01L43/12 , Y10T29/49034
摘要： An annealing process for a TMR or GMR sensor having an amorphous free layer is disclosed and employs at least two annealing steps. A first anneal at a temperature T1 of 200° C. to 270° C. and for a t1 of 0.5 to 15 hours is employed to develop the pinning in the AFM and pinned layers. A second anneal at a temperature T2 of 260° C. to 400° C. where T2>T1 and t1>t2 is used to crystallize the amorphous free layer and complete the pinning. An applied magnetic field of about 8000 Oe is used during both anneal steps. The mechanism for forming a sensor with high MR and robust pinning may involve structural change in the tunnel barrier or at an interface between two of the layers in the spin valve stack. A MgO tunnel barrier and a CoFe/CoB free layer are preferred.

39. 发明授权

US08493694B2 Fabrication of a coercivity hard bias using FePt containing film 有权
标题翻译：使用含FePt膜制备高矫顽力硬偏压
公开(公告)号：US08493694B2
公开(公告)日：2013-07-23
申请号：US12927697
申请日：2010-11-22
申请人： Min Zheng , Kunliang Zhang , Min Li
发明人： Min Zheng , Kunliang Zhang , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , H01F10/123 , H01F10/30 , H01F41/302 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1121
摘要： The free layer of a CPP-TMR sensor is biased by laterally disposed hard bias (HB) layers that include a seedlayer structure, a magnetic layer structure of high coercivity material and a capping layer structure. The magnetic layer structure is a layer of FePt-containing material, such as FePtCu, while the seedlayers and capping layers include layers of Cr, CrTi, Fe, FeCo or FeCoMo. These combinations enable the promotion of the L10 phase of the FePt-containing material which provides a high coercivity magnetic layer structure at much lower annealing temperatures than in the prior art.
摘要翻译： CPP-TMR传感器的自由层由横向设置的硬偏置（HB）层偏置，其包括种层结构，高矫顽力材料的磁性层结构和覆盖层结构。磁性层结构是含FePt的材料层，例如FePtCu，而层和覆盖层包括Cr，CrTi，Fe，FeCo或FeCoMo层。这些组合使得能够促进含FePt的材料的L10相，其提供比现有技术低得多的退火温度下的高矫顽磁性层结构。

40. 发明申请

US20130082787A1 Spin injection layer robustness for microwave assisted magnetic recording 有权
标题翻译：微波辅助磁记录的自旋注入层鲁棒性
公开(公告)号：US20130082787A1
公开(公告)日：2013-04-04
申请号：US13200844
申请日：2011-10-03
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
IPC分类号： H03B7/00 , C23C14/14 , C23C14/35 , B05D5/00 , B05D3/02
CPC分类号： H03B15/006 , C23C14/025 , C23C14/165 , G11C5/005 , G11C11/161 , Y10T428/1114
摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.
摘要翻译：具有在自旋注入层（SIL）和场产生层（FGL）之间形成的非磁性间隔物的自旋转移（扭矩）振荡器（STO），以及由Fe（100-V）CoV组成的界面层，其中v 公开了在SIL和非磁性间隔物之间形成的5至100原子％。使用由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层来增强STO器件中的垂直磁各向异性（PMA）。界面层淬灭SIL振荡，从而使SIL稳定于FGL振荡。界面层优选具有5至50埃的厚度，并且增强STO器件中的振幅（dR / R）。 STO设备可能具有顶部SIL或底部SIL配置。 SIL通常是诸如（Co / Ni）X的层压结构，其中x在5和50之间。

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