专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20120244665A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120244665A1
公开(公告)日：2012-09-27
申请号：US13404521
申请日：2012-02-24
申请人： Taiji SAKAI , Nobuhiro Imaizumi , Masataka Mizukoshi
发明人： Taiji SAKAI , Nobuhiro Imaizumi , Masataka Mizukoshi
IPC分类号： H01L21/60
CPC分类号： H01L24/81 , H01L24/11 , H01L24/13 , H01L24/75 , H01L2224/11013 , H01L2224/1184 , H01L2224/13111 , H01L2224/13124 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16245 , H01L2224/75101 , H01L2224/81065 , H01L2224/81075 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/8183 , H01L2224/83192 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13064 , H01L2924/00014 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes: forming a first layer including crystals by processing a surface of a first electrode of a semiconductor element; forming a second layer including crystals by processing a surface of a second electrode of a mounting member on which the semiconductor element is mounted; reducing a first oxide film present over or in the first layer and a second oxide film present over or in the second layer at a first temperature, the first temperature being lower than a second temperature at which a first metal included in the first electrode diffuses in a solid state and being lower than a third temperature at which a second metal included in the second electrode diffuses in a solid state; and bonding the first layer and the second layer to each other by solid-phase diffusion.
摘要翻译：一种制造半导体器件的方法包括：通过处理半导体元件的第一电极的表面，形成包括晶体的第一层; 通过加工其上安装有半导体元件的安装构件的第二电极的表面，形成包括晶体的第二层; 在第一温度下减少存在于第一层上或第一层中的第一氧化物膜和存在于第二层中或第二层中的第二氧化物膜，第一温度低于包含在第一电极中的第一金属扩散的第二温度并且低于包含在第二电极中的第二金属以固态扩散的第三温度; 以及通过固相扩散将第一层和第二层彼此结合。

32. 发明申请

US20120193800A1 SOLDER, SOLDERING METHOD, AND SEMICONDUCTOR DEVICE 有权
标题翻译：焊接，焊接方法和半导体器件
公开(公告)号：US20120193800A1
公开(公告)日：2012-08-02
申请号：US13313349
申请日：2011-12-07
申请人： Toshiya Akamatsu , Nobuhiro Imaizumi , Seiki Sakuyama , Keisuke Uenishi , Tetsuhiro Nakanishi
发明人： Toshiya Akamatsu , Nobuhiro Imaizumi , Seiki Sakuyama , Keisuke Uenishi , Tetsuhiro Nakanishi
IPC分类号： H01L23/488 , H05K1/02 , C22C30/04 , B23K31/02 , C22C12/00 , C22C30/06
CPC分类号： H05K3/3463 , B23K35/0244 , B23K35/262 , B23K35/264 , B23K2101/36 , B23K2101/40 , C22C12/00 , C22C13/00 , C22C30/04 , C22C30/06 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/13099 , H01L2224/13111 , H01L2224/13113 , H01L2224/16225 , H01L2224/16227 , H01L2224/16506 , H01L2224/81065 , H01L2224/81097 , H01L2224/81192 , H01L2224/81211 , H01L2224/81805 , H01L2224/81815 , H01L2924/00013 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/15311 , Y10T428/12708 , H01L2924/01083 , H01L2924/0105 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： A solder includes Sn (tin), Bi (bismuth) and Zn (zinc), wherein the solder has a Zn content of 0.01% by weight to 0.1% by weight.
摘要翻译：焊料包括Sn（锡），Bi（铋）和Zn（锌），其中焊料的Zn含量为0.01重量％至0.1重量％。

33. 发明申请

US20060027936A1 Method for processing base 审中-公开
标题翻译：基地处理方法
公开(公告)号：US20060027936A1
公开(公告)日：2006-02-09
申请号：US11017875
申请日：2004-12-22
申请人： Masataka Mizukoshi , Nobuhiro Imaizumi , Yoshikatsu Ishizuki
发明人： Masataka Mizukoshi , Nobuhiro Imaizumi , Yoshikatsu Ishizuki
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L21/563 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/81 , H01L24/83 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05572 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05684 , H01L2224/1147 , H01L2224/13099 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/45139 , H01L2224/45144 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81801 , H01L2224/83191 , H01L2224/83194 , H01L2224/838 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/0781 , H01L2924/13091 , H01L2924/1579 , H01L2924/19041 , H01L2924/00 , H01L2924/00015 , H01L2224/29099 , H01L2224/48 , H01L2924/013 , H01L2924/01049
摘要： Electrodes and an insulating film are both formed of materials which have characteristics that they are solid and do not exhibit adhesiveness at a room temperature, exhibit adhesiveness at and above a first temperature higher than this, and are cured at and above a second temperature higher than this. Planarication processing is carried out by performing cutting with a hard cutting tool made of diamond and the like so that surfaces film the electrodes and a surface of the insulating film become continuously planar.
摘要翻译：电极和绝缘膜均由具有固体特性并且在室温下不具有粘合性的材料形成，在高于此的第一温度以上显示粘合性，并且在高于这个。通过使用由金刚石等制成的硬切割工具进行切割来进行平面化处理，使得电极的表面和绝缘膜的表面成为连续的平面。

34. 发明申请

US20050110169A1 Semiconductor device and method of making the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050110169A1
公开(公告)日：2005-05-26
申请号：US11019617
申请日：2004-12-23
申请人： Tomohisa Yagi , Nobuhiro Imaizumi , Yasuhiro Usui , Kenji Fukuzono
发明人： Tomohisa Yagi , Nobuhiro Imaizumi , Yasuhiro Usui , Kenji Fukuzono
IPC分类号： H01L21/60 , H01L21/56 , H01L23/12 , H01L23/498 , H01L23/495
CPC分类号： H01L23/49816 , H01L21/563 , H01L24/29 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/83102 , H01L2224/92125 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01082 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/351 , H01L2924/00 , H01L2924/3512
摘要： According to a method of making a semiconductor device, a semiconductor chip is bonded to a substrate via bumps by flip-chip bonding. Then, a sealing adhesive composition is loaded between the semiconductor chip and the substrate to provide an adhesive sealing. The sealing adhesive composition, which is capable of hardening in two stages, contains at least a first main resin ingredient, a second main resin ingredient and a hardening agent. Then, the adhesive sealing is heated for primary hardening. Then, the substrate is placed on a mother board with a solder material interposed between the substrate and the mother board. Finally, the adhesive sealing is heated for secondary hardening while the solder material is reflowed for bonding the substrate to the mother board.
摘要翻译：根据制造半导体器件的方法，通过倒装芯片接合，半导体芯片通过凸块接合到基板。然后，在半导体芯片和基板之间加载密封粘合剂组合物以提供粘合剂密封。能够两阶段硬化的密封粘合剂组合物至少含有第一主要树脂成分，第二主要树脂成分和硬化剂。然后，加热粘合剂密封件进行一次硬化。然后，将基板放置在母板上，其中焊料材料插入在基板和母板之间。最后，将粘合剂密封加热以进行二次硬化，同时将焊料回流焊接到母板上。

35. 发明授权

US06522935B1 Control-specification design management system used for load control devices 失效
标题翻译：用于负载控制装置的控制规范设计管理系统
公开(公告)号：US06522935B1
公开(公告)日：2003-02-18
申请号：US08674452
申请日：1996-07-01
申请人： Nobuhiro Imaizumi , Tatsuaki Oniishi
发明人： Nobuhiro Imaizumi , Tatsuaki Oniishi
IPC分类号： G06F1546
CPC分类号： B60R16/0315 , B60R2016/0322 , Y02P90/265
摘要： In designing the connection correspondence of the control switches to the loads, the control-specification design management system used for the load control devices refers to the connection correspondence stored in the look-up table or a slip file prepared in the preceding design, and presents to a designer candidates for the loads that can be controlled when these are connected to the control switches. While seeing the candidates, the designer selects the most suitable one from among those presented candidates. He designs control-specification information and prints out the contents of the slip file.
摘要翻译：在设计控制开关与负载的连接对应关系时，用于负载控制装置的控制规范设计管理系统是指存储在查找表中的连接对应或前一设计中准备的滑动文件，给设计师候选人，当这些负载连接到控制开关时可以控制的负载。在看到候选人的同时，设计者从提出候选人中选出最适合的人物。他设计控制规范信息并打印出打印文件的内容。

36. 发明授权

US5943315A Multiplex transmission system and abnormality processing controlling method and apparatus used therefor 失效
标题翻译：复用传输系统及其异常处理控制方法及装置
公开(公告)号：US5943315A
公开(公告)日：1999-08-24
申请号：US878530
申请日：1997-06-19
申请人： Yoshio Iwasawa , Nobuhiro Imaizumi
发明人： Yoshio Iwasawa , Nobuhiro Imaizumi
IPC分类号： B60R16/02 , B60R16/023 , G08C15/00 , H04L12/40 , H04L29/14 , H04J1/16 , H04J3/14
CPC分类号： H04L12/40169 , G08C15/00 , H04L12/403 , H04L69/40 , H04L2012/40273
摘要： A multiplex transmission system includes a multiplex transmission network through which normality and abnormality processing control specification information (PCSI) for loads are transmitted. A master load control unit (LCU) is connected to the multiplex transmission network. The master load control unit can multiplex the abnormality PCSi for a load as a main operation. A slave load control unit (LCU) is connected to the multiplex transmission network. The slave load control unit can multiplex the abnormality PCSI as a slave operation between itself and the main LCU. A storage device is mounted in the master and slave LCUs. The storage device can update and hold the information and read it at any time. In this multiplex transmission system, multiplexing abnormality can be detected and abnormality processing in the LCU in an abnormal state is controlled to urge its recovery of the LCU to a normal state.
摘要翻译：多路复用传输系统包括多路复用传输网络，通过该复用传输网络发送负载的正常和异常处理控制指定信息（PCSI）。主负载控制单元（LCU）连接到多路复用传输网络。主负载控制单元可以将用于负载的异常PCSi多路复用为主操作。从属负载控制单元（LCU）连接到多路复用传输网络。从属负载控制单元可以将异常PCSI复用为自身与主LCU之间的从动操作。存储设备安装在主和从属LCU中。存储设备可以随时更新和保存信息并进行读取。在该复用传输系统中，可以检测复用异常，并且控制处于异常状态的LCU中的异常处理，以促使其将LCU恢复到正常状态。

37. 发明授权

US5895989A Power supply unit and connector connection failure detection method 失效
标题翻译：电源单元和连接器连接故障检测方法
公开(公告)号：US5895989A
公开(公告)日：1999-04-20
申请号：US956432
申请日：1997-10-23
申请人： Nobuhiro Imaizumi , Hiromichi Hanaoka , Tatsuaki Oniishi
发明人： Nobuhiro Imaizumi , Hiromichi Hanaoka , Tatsuaki Oniishi
IPC分类号： G01R31/02 , B60R16/02 , B60R16/03 , G01R31/00 , G01R31/04 , G05F1/10 , H02H3/00 , H02H3/087 , H02H5/10 , H02H3/027
CPC分类号： H02H3/087 , G01R31/007 , G01R31/045 , B60R16/03 , G01R31/024 , H02H5/10 , Y10T307/826 , Y10T307/937
摘要： A power supply unit adapted to supply power from a power supply section to a load via a plurality of power supply lines connected by an on/off switch and connectors. The power supply unit includes a load open detection section for detecting an open state between the on/off switch and the load, a monitor section for monitoring the number of times the open state has been entered per unit time based on the detection result of the load open detection section, and a control section for controlling the on/off switch off when the number of times the open state has been entered per unit time is greater than a predetermined number of times.
摘要翻译：电源单元，其适于经由通过开/关开关和连接器连接的多个电源线从电源部分向负载供电。电源单元包括用于检测开/关开关和负载之间的打开状态的负载打开检测部分，用于基于检测结果监视每单位时间已经进入打开状态的次数的监视部分负载打开检测部分，以及当每单位时间进入打开状态的次数时，用于控制开关断开的控制部分大于预定次数。

38. 发明授权

US5845221A Load control system for vehicle 失效
标题翻译：车载负荷控制系统
公开(公告)号：US5845221A
公开(公告)日：1998-12-01
申请号：US675295
申请日：1996-07-01
申请人： Kiyoshi Hosokawa , Yoshinori Ikuta , Nobuhiro Imaizumi
发明人： Kiyoshi Hosokawa , Yoshinori Ikuta , Nobuhiro Imaizumi
IPC分类号： B60R16/02 , B60R16/03 , G05F1/66 , H02J1/00 , H02J1/14 , B60L1/00
CPC分类号： B60R16/0315 , H02J1/14 , B60R2016/0322 , Y02T10/92
摘要： A switch operating unit 10 has operating switches for operating loads. A load control unit controls the corresponding loads in accordance with the operation of the operating switches according to information, which is stored in first storage device, as to the correlation between the operating switches and the loads. A total rated capacity computation device computes the total rated capacity of the loads to be driven under the control of the load control unit according to information, which is stored in second storage device, as to the rated capacity of each load. When the total rated capacity exceeds a predetermined allowable capacity, the load control unit operates to restrict the driving of the low-priority loads in the order of analog-controlled loads and on-off controlled loads according to the information stored in the second storage device.
摘要翻译：开关操作单元10具有用于操作负载的操作开关。负载控制单元根据操作开关的操作根据存储在第一存储装置中的信息来控制相应的负载，关于操作开关和负载之间的相关性。总额定容量计算装置根据存储在第二存储装置中的关于每个负载的额定容量的信息，计算在负载控制单元的控制下要驱动的负载的总额定容量。当总额定容量超过预定的允许容量时，负载控制单元根据存储在第二存储装置中的信息按照模拟控制负载和开关受控负载的顺序来限制低优先级负载的驱动。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式