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31. 发明授权

US5795828A Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device 失效
标题翻译：用于形成半导体器件的布线的无电镀浴，以及形成半导体器件的布线的方法
公开(公告)号：US5795828A
公开(公告)日：1998-08-18
申请号：US675667
申请日：1996-07-03
申请人： Masayuki Endo , Akemi Kawaguchi , Mikio Nishio , Shin Hashimoto
发明人： Masayuki Endo , Akemi Kawaguchi , Mikio Nishio , Shin Hashimoto
IPC分类号： C23C18/34 , C23C18/40 , C23C18/44 , H01L21/44
CPC分类号： C23C18/40 , C23C18/34 , C23C18/44
摘要： A contact hole and a wiring groove are formed in an insulating layer formed on a semiconductor substrate. A silver layer is formed inside of the contact hole and the wiring groove and on the insulating layer with the use of an electroless plating bath comprising: silver nitrate containing silver ions; tartaric acid serving as a reducing agent of the silver ions; ethylenediamine serving as a complexing agent of the silver ions; and metallic ions of tetramethylammoniumhydroxide serving as a pH control agent. Then, the silver layer on the insulating layer is removed by a chemical and mechanical polishing method such that an embedded wiring is formed in each of the contact hole and the wiring groove.
摘要翻译：在半导体衬底上形成的绝缘层中形成接触孔和布线槽。通过使用含有银离子的硝酸银的化学镀浴，在接触孔和布线槽内部和绝缘层上形成银层; 酒石酸作为银离子的还原剂; 乙二胺作为银离子的络合剂; 和作为pH调节剂的四甲基氢氧化铵的金属离子。然后，通过化学和机械抛光方法去除绝缘层上的银层，使得在每个接触孔和布线槽中形成嵌入的布线。

32. 发明授权

US5679500A Method of forming micropatterns utilizing silylation and overall energy beam exposure 失效
标题翻译：使用甲硅烷基化和总能量束曝光形成微图案的方法
公开(公告)号：US5679500A
公开(公告)日：1997-10-21
申请号：US564822
申请日：1995-11-29
申请人： Takahiro Matsuo , Kazuhiro Yamashita , Masayuki Endo , Masaru Sasago
发明人： Takahiro Matsuo , Kazuhiro Yamashita , Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26 , G03F7/32 , H01L21/027 , H01L21/033 , G03F7/36 , G03F7/38
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
摘要翻译：通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生酸并与酸反应。如果通过掩模用KrF准分子激光照射抗蚀剂膜，则在抗蚀剂膜的暴露部分的表面中产生酸，使得暴露部分的表面由酸形成亲水性。如果将水蒸汽供应到抗蚀剂膜的表面，则水从暴露部分的表面扩散到深部。如果甲基三乙氧基硅烷的蒸气在相对湿度为95％的空气中被喷涂在抗蚀剂膜的表面上，则在暴露部分的表面上选择性地形成厚度足够大的氧化物膜。

33. 发明授权

US5558971A Resist material 失效
标题翻译：抗拒材料
公开(公告)号：US5558971A
公开(公告)日：1996-09-24
申请号：US407611
申请日：1995-03-21
申请人： Fumiyoshi Urano , Takaai Negishi , Akiko Katsuyama , Masayuki Endo
发明人： Fumiyoshi Urano , Takaai Negishi , Akiko Katsuyama , Masayuki Endo
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译：抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。

34. 发明授权

US5401932A Method of producing a stencil mask 失效
标题翻译：生产模板掩模的方法
公开(公告)号：US5401932A
公开(公告)日：1995-03-28
申请号：US13100
申请日：1993-02-03
申请人： Kazuhiko Hashimoto , Masayuki Endo , Masaru Sasago
发明人： Kazuhiko Hashimoto , Masayuki Endo , Masaru Sasago
IPC分类号： B23H9/00 , B23H9/14 , G03F1/20 , B23H1/00 , G03F1/16
CPC分类号： G03F1/20 , B23H9/00 , B23H9/14
摘要： The reverse side of a substrate made of stainless steel is subjected to electro-discharge machining using a thick electrode having a diameter of about 10 .mu.m, thus selectively etching other part than the edge of the reverse side of the substrate. This electro-discharge machining causes the other part than the edge of the substrate to be thinned to a thickness of about 10 .mu.m. The surface of the substrate thus thinned is subjected to electro-discharge machining using a slender electrode having a diameter of about 3 .mu.m, thus forming a pattern having a predetermined configuration in the surface of the substrate. Further, the surface of the substrate is etched with the use of the slender electrode, so that the pattern of the silicon substrate is pierced, thus forming a pattern having vertical through-holes. Thus, by using, as a mask material, a substrate solely made of stainless steel as it is, there can be produced a stencil mask which is excellent in mechanical strength and thermal stability and which is not thermally distorted.
摘要翻译：使用直径约10μm的厚电极对由不锈钢制成的基板的背面进行放电加工，从而选择性地蚀刻比衬底背面的其它部分的其它部分。这种放电加工使得除了衬底的边缘之外的其它部分被减薄到约10μm的厚度。使用直径约3μm的细长电极对如此减薄的基板的表面进行放电加工，从而在基板的表面形成具有预定构造的图案。此外，利用细长的电极蚀刻衬底的表面，使得硅衬底的图案被刺穿，从而形成具有垂直通孔的图案。因此，通过使用仅由不锈钢制成的基材作为掩模材料，可以制造机械强度和热稳定性优异且不发生热变形的模板掩模。

35. 发明授权

US5316891A Fine pattern forming method 失效
标题翻译：精细图案形成方法
公开(公告)号：US5316891A
公开(公告)日：1994-05-31
申请号：US871199
申请日：1992-04-20
申请人： Kazuhiko Hashimoto , Masayuki Endo
发明人： Kazuhiko Hashimoto , Masayuki Endo
IPC分类号： H01L21/027 , G03F7/075 , G03C5/00
CPC分类号： G03F7/0757 , Y10S430/126
摘要： A high molecular organic film as the bottom layer is coated on a semiconductor silicone substrate in a thickness of 2 .mu.m and a solution of 2,4,6-tris(trichloromethyl)-1,3,5-triazine as a crosslinking agent and poly(p-hydroxyphenylsilsesquioxane) in ethyl cellosolve acetate is coated thereon in a thickness of 0.3 .mu.m as the top layer electron beam resist. After exposure to electron beams, the resulting wafer is developed with an aqueous organic alkaline solution to give an accurate and fine negative resist pattern. Etching of the bottom layer using this resist pattern as a mask can readily form a fine resist pattern accurately in a high aspect ratio.
摘要翻译：将作为底层的高分子有机膜涂覆在厚度为2μm的半导体硅酮基底上，并将2,4,6-三（三氯甲基）-1,3,5-三嗪的溶液作为交联剂和在乙基溶纤剂乙酸酯中的聚（对羟基苯基倍半硅氧烷）以0.3μm的厚度涂覆在其上作为顶层电子束抗蚀剂。在暴露于电子束之后，用有机碱性水溶液显影所得的晶片，得到精确和精细的负抗蚀剂图案。使用该抗蚀剂图案作为掩模的底层的蚀刻可以以高纵横比容易地精确地形成精细的抗蚀剂图案。

36. 发明授权

US4910123A Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US4910123A
公开(公告)日：1990-03-20
申请号：US137711
申请日：1987-12-24
申请人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
发明人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
IPC分类号： C08F8/30 , C08G8/28 , G03F7/039
CPC分类号： G03F7/039 , C08F8/30 , C08G8/28 , Y10S430/146
摘要： Disclosed is a pattern forming method using pattern forming material which is reactive to a light of 249 nm or so such as DUV light or excimer laser light and applicable to manufacture of semiconductors. The material used in this method includes resin which includes a bonding unit of ##STR1## and has low absorption near 249 nm after light exposure, and is soluble in a solvent which dissolves the resin. By this method, a fine pattern of high contrast can be obtained.
摘要翻译：公开了使用与249nm左右的光反应的图案形成材料的图案形成方法，例如DUV光或准分子激光，并且可用于制造半导体。在该方法中使用的材料包括具有的接合单元并且在曝光后接近249nm的低吸收性的树脂，并且可溶于溶解树脂的溶剂中。通过该方法，可以获得高对比度的精细图案。

37. 发明授权

US4840872A Pattern forming method by use of X-ray exposure 失效
标题翻译：使用X射线曝光的图案形成方法
公开(公告)号：US4840872A
公开(公告)日：1989-06-20
申请号：US108698
申请日：1987-10-15
申请人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
发明人： Masayuki Endo , Masaru Sasago , Kazufumi Ogawa
IPC分类号： H01L21/027 , G03F7/038 , G03F7/20
CPC分类号： G03F7/2039 , G03F7/038 , Y10S430/125 , Y10S430/167 , Y10S430/168
摘要： A pattern forming method in which a water-soluble organic film absorbing secondary electrons or soft X-rays is formed on a resist layer and thereafter, pattern exposure, development are carried out. The water-soluble organic film containing halogen, sulfur, metal atom, etc. absorbs secondary electrons or soft X-rays which are generated from a mask in X-rays exposure so that only X-rays passed through openings of the mask are applied to a resist layer and a super fine pattern of high aspect ratio can be obtained.
摘要翻译：在抗蚀剂层上形成吸收二次电子或软X射线的水溶性有机膜，然后进行图案曝光，显影的图案形成方法。含有卤素，硫，金属原子等的水溶性有机膜在X射线曝光中吸收从掩模产生的二次电子或软X射线，使得仅穿过掩模的开口的X射线被施加到可以获得高纵横比的抗蚀剂层和超细纹图案。

38. 发明授权

US4812880A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4812880A
公开(公告)日：1989-03-14
申请号：US67122
申请日：1987-06-29
申请人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
发明人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G03B27/54 , G03B27/42
CPC分类号： G03F9/70 , G03F7/2006
摘要： Disclosed is an exposure apparatus used in photolithographic process in fabrication of semiconductor devices. More particularly, in an exposure apparatus using an excimer laser, the TTL alignment is achieved by using light with wavelengths of 300 to 400 nm, different from that of excimer laser for exposure, for the purpose of alignment.
摘要翻译：公开了一种在制造半导体器件的光刻工艺中使用的曝光装置。更具体地说，在使用准分子激光的曝光装置中，为了进行对准，通过使用与用于曝光的准分子激光器不同的波长为300〜400nm的光来实现TTL对准。

39. 发明授权

US07939242B2 Barrier film material and pattern formation method using the same 有权
标题翻译：阻挡膜材料和图案形成方法使用相同
公开(公告)号：US07939242B2
公开(公告)日：2011-05-10
申请号：US12046996
申请日：2008-03-12
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/20 , G03F7/40
CPC分类号： G03F7/2041 , G03F7/11
摘要： A barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. Thus, the multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist film, and hence, particles having been adhered to the surface of the resist film are removed in removing the barrier film. Also, in the case where the barrier film is removed simultaneously with development, the resist film can be prevented from remaining partly undissolved.
摘要翻译：除了碱溶性聚合物之外，阻挡膜材料还包含具有多个羧基或多价醇化合物的多价羧酸化合物。因此，多价羧酸化合物或多价醇化合物附着在抗蚀剂膜的表面上，因此除去阻挡膜后除去附着在抗蚀剂膜表面的颗粒。此外，在显影时同时除去阻挡膜的情况下，可以防止部分未溶解的抗蚀剂膜。

40. 发明申请

US20100265477A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND PATTERN FORMATION METHOD 审中-公开
标题翻译：半导体制造设备和图案形成方法
公开(公告)号：US20100265477A1
公开(公告)日：2010-10-21
申请号：US12824793
申请日：2010-06-28
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03B27/52
CPC分类号： G03F7/70341 , G03F7/2041 , G03F7/70891
摘要： In a pattern formation method employing immersion lithography, after a resist film is formed on a wafer, pattern exposure is performed by selectively irradiating the resist film with exposing light with a liquid including an unsaturated aliphatic acid, such as sunflower oil or olive oil including oleic acid, provided on the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.
摘要翻译：在使用浸渍光刻的图案形成方法中，在晶片上形成抗蚀剂膜之后，通过用包含不饱和脂肪酸的液体（例如向日葵油或橄榄油，包括油酸）曝光光来选择性地照射抗蚀剂膜来进行图案曝光酸，提供在抗蚀剂膜上。在图案曝光之后，抗蚀剂膜被显影以形成由抗蚀剂膜制成的抗蚀剂图案。

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