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31. 发明授权

US5401974A Charged particle beam exposure apparatus and method of cleaning the same 失效
标题翻译：带电粒子束曝光装置及其清洗方法
公开(公告)号：US5401974A
公开(公告)日：1995-03-28
申请号：US191458
申请日：1994-02-03
申请人： Yoshihisa Oae , Takamasa Satoh , Yasushi Takahashi , Kiichi Sakamoto , Hiroshi Yasuda , Soichiro Arai , Moritaka Nakamura
发明人： Yoshihisa Oae , Takamasa Satoh , Yasushi Takahashi , Kiichi Sakamoto , Hiroshi Yasuda , Soichiro Arai , Moritaka Nakamura
IPC分类号： H01J37/30 , H05H1/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3002 , H01J37/32082 , H01J37/32862 , H01J2237/022 , H01J2237/3175
摘要： In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.
摘要翻译：在带电粒子束曝光装置中，带电粒子束投射到待暴露的构件上，从而在其上形成图案，设置有围绕带电粒子束的光轴设置的多个电极，第一单元，将含有氧的气体作为主要成分引入到包括多个电极的带电粒子束曝光设备的内部，并将设备内部保持在0.1托和4托之间的真空度，以及用于选择性地将第二单元将频率在100kHz和800kHz之间的高频信号或参考信号施加到多个电极中的每一个。在装置的内部产生气体的等离子体自由基状态，从而可以消除装置中存在的沉积物。

32. 发明授权

US5349197A Method for exposing a pattern on an object by a charged particle beam 失效
标题翻译：通过带电粒子束曝光物体上的图案的方法
公开(公告)号：US5349197A
公开(公告)日：1994-09-20
申请号：US953073
申请日：1992-09-29
申请人： Kiichi Sakamoto , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Hiroshi Yasuda
IPC分类号： H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/31776
摘要： A method for exposing a pattern of a semiconductor device on an object comprises the steps of extracting block exposure data from design data the semiconductor device, extracting variable exposure data from the design data, extracting fine exposure data from the variable exposure data such that the fine exposure data comprises exposure data for fine elemental patterns that have a size smaller than a predetermined threshold size below which exposure by a variable shaped beam is difficult, extracting mask data indicative of a construction of a beam shaping mask used for shaping the beam based upon the block exposure data, variable exposure data and the fine exposure data, such that the mask data includes information about location, size and shape of apertures formed on the beam shaping mask for shaping the beam, fabricating the beam shaping mask based upon the mask data, and exposing the device pattern by selectively passing the beam through one of the block apertures, the variable exposure aperture and the fine aperture based upon block exposure data, the variable exposure data and the fine exposure data.
摘要翻译：一种用于在对象上露出半导体器件的图案的方法包括以下步骤：从设计数据中提取块曝光数据，半导体器件，从设计数据中提取可变曝光数据，从可变曝光数据中提取精细曝光数据，使得精细曝光数据包括具有小于预定阈值尺寸的细小元素图案的曝光数据，在预定阈值尺寸以下，由可变形波束进行曝光是困难的，提取表示基于用于成形光束的光束成形掩模的结构的掩模数据块曝光数据，可变曝光数据和精细曝光数据，使得掩模数据包括关于形成在用于成形光束的光束整形掩模上的孔的位置，尺寸和形状的信息，基于掩模数据制造光束整形掩模，并且通过选择性地将光束通过块孔之一，可变曝光来暴露设备图案基于块曝光数据，可变曝光数据和精细曝光数据的光圈和精细光圈。

33. 发明授权

US5223719A Mask for use in a charged particle beam apparatus including beam passing sections 失效
标题翻译：用于包括光束通过部分的带电粒子束装置的掩模
公开(公告)号：US5223719A
公开(公告)日：1993-06-29
申请号：US724338
申请日：1991-07-05
申请人： Yasushi Takahashi , Kiichi Sakamoto , Yoshihisa Oae , Hiroshi Yasuda , Nobuyuki Yasutake
发明人： Yasushi Takahashi , Kiichi Sakamoto , Yoshihisa Oae , Hiroshi Yasuda , Nobuyuki Yasutake
IPC分类号： H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31761 , H01J2237/31776
摘要： A charged particle beam mask and apparatus and method of using the same employing a mask that includes a substrate and a plurality of substantially rectangular beam passing sections arranged in parallel and to have a trapezoidal shape. In addition, the masks having a matrix of irradiation areas formed thereon where each irradiation area has a matrix of block patterns, are aligned and selectively irradiated to form a desired pattern on an object.
摘要翻译：一种带电粒子束掩模及其采用掩模的装置及方法，该掩模包括基板和平行排列并具有梯形形状的多个大致矩形的光束通过部分。此外，在其上形成有照射区域具有块图案的矩阵的照射区域的矩阵的掩模被对准并选择性地照射以在物体上形成期望的图案。

34. 发明授权

US5173582A Charged particle beam lithography system and method 失效
标题翻译：带电粒子束光刻系统及方法
公开(公告)号：US5173582A
公开(公告)日：1992-12-22
申请号：US585777
申请日：1990-09-20
申请人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada
发明人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada
IPC分类号： H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/15 , H01J2237/30411 , H01J2237/31776
摘要： A charged particle beam lithography system includes a beam source of a charged particle beam, a beam shaping aperture for providing a predetermined cross section to the charged particle beam, a first focusing system for focusing the charged particle beam on a first crossover point located on the optical axis, a second focusing system provided between the first crossover point and an object for focusing the charged particle beam on a second crossover point located on the optical axis, a beam deflection system for deflecting the electron beam such that the beam is displaced on the surface of the object, a stage for supporting the object, a mask provided in a vicinity of said first focusing system, and an addressing system for selectively deflecting the charged particle beam such that the charged particle beam is passed through a selected aperture on the mask. The addressing system includes an electrostatic deflector for variable shaping of the charged particle beam and an electromagnetic deflector for deflecting the charged particle beam such that the charged particle beam is selectively passed through a selected one of the plurality of apertures except for the predetermined aperture.
摘要翻译：带电粒子束光刻系统包括带电粒子束的束源，用于向带电粒子束提供预定横截面的光束整形孔;第一聚焦系统，用于将带电粒子束聚焦在位于所述带电粒子束上的第一交越点光轴，设置在第一交叉点和用于将带电粒子束聚焦在位于光轴上的第二交叉点上的物体之间的第二聚焦系统，用于偏转电子束的光束偏转系统，使得光束在物体的表面，用于支撑物体的台，设置在所述第一聚焦系统附近的掩模和用于选择性地偏转带电粒子束的寻址系统，使得带电粒子束穿过掩模上的选定孔径。寻址系统包括用于带电粒子束的可变成形的静电偏转器和用于偏转带电粒子束的电磁偏转器，使得带电粒子束选择性地通过除了预定孔径之外的多个孔中的所选择的孔中。

35. 发明授权

US5118952A Patterned photo cathode and its fabrication method for electron image projection 失效
标题翻译：图形照相阴影及其电子图像投影的制作方法
公开(公告)号：US5118952A
公开(公告)日：1992-06-02
申请号：US605008
申请日：1990-10-24
申请人： Kiichi Sakamoto , Hiroshi Yasuda , Jinko Kudou , Akio Yamada
发明人： Kiichi Sakamoto , Hiroshi Yasuda , Jinko Kudou , Akio Yamada
IPC分类号： G03F1/00 , G03F1/20 , H01J1/34 , H01J9/12 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J1/34 , H01J37/3175 , H01J9/12 , H01J2201/3425 , H01J2201/3426 , H01J2237/31779
摘要： A photo cathode used for an electron image projection apparatus has a silver layer as a photo electric material and a layer of an alkali metal or alkaline earth metal, such as cesium, coated on the silver layer. The cesium is as thick as several atomic layers, and reduces the work function of the photo cathode. The silver layer may be coated all over a substrate, and portions other than the cathode may be masked by a non photoelectric metal, or non transparent metal, such as platinum. Or, the silver layer may be patterned on the layer of a non photoelectric metal coated on the substrate. An excitation light to the photo cathode may be irradiated onto the surface of the silver, or onto the back of the silver layer through a transparent substrate. After depositing the cesium layer on the silver, the layers are heated in a vacuum at 50.degree. to 200.degree. C., thus a contrast ratio, i.e. ratio of electron current from the cathode and from the non cathode portion, is achieved as high as 20. This low temperature heat processing prevents lateral diffusion of the mask metal, resulting in a sharp edge of the cathode pattern. Silver and the cesium thereon are not susceptive to open air atmosphere, thus allowing long life and easy handling for an efficient lithography processing. The low absorption edge of the silver allows the use of a high pressure mercury lamp whose light is easily focused by a lens.

36. 发明授权

US06222195B1 Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US06222195B1
公开(公告)日：2001-04-24
申请号：US09637119
申请日：2000-08-11
申请人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
发明人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
IPC分类号： G03F900
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/86 , H01J37/3045 , H01J37/3174 , H01J2237/2817 , H01J2237/31794
摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.
摘要翻译：公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成在将带电粒子束暴露在物体上之前的带电粒子束的横截面。该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在使带电粒子束通过相同的孔之后，在包含与物体基本上在与物体相同的高度的表面上的标记的区域上扫描带电粒子束; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

37. 发明授权

US5364718A Method of exposing patttern of semiconductor devices and stencil mask for carrying out same 失效
标题翻译：曝光半导体器件的模板和执行相同模板的方法
公开(公告)号：US5364718A
公开(公告)日：1994-11-15
申请号：US57017
申请日：1993-05-05
申请人： Yoshihisa Oae , Kiichi Sakamoto
发明人： Yoshihisa Oae , Kiichi Sakamoto
IPC分类号： G03F1/20 , G03F7/20 , H01J37/302 , G03F9/00
CPC分类号： G03F1/20 , G03F7/2022 , G03F7/70475 , H01J37/3026
摘要： A method is provided for exposing a semiconductor device pattern onto a semiconductor substrate by repeatedly exposing an adjoining arrangement of a plurality of unit patterns. The device pattern is first divided into a plurality of unit patterns. Then, a stencil mask is provided with transmitting openings having shapes conforming to the respective unit patterns. Pattern lines on the stencil mask of the unit patterns which are to be connected with each other have at least one connecting end provided with at least one protrusion having a width less than that of the corresponding pattern lines. The protrusion on the connecting end reduces errors such as interruptions or excessive broadening in an exposed pattern line due to misalignment. Also disclosed is a stencil mask for carrying out the present inventive method.
摘要翻译：提供了一种通过重复暴露多个单元图案的相邻布置来将半导体器件图案暴露于半导体衬底上的方法。首先将装置图案划分为多个单位图案。然后，模板掩模设置有具有符合相应单元图案的形状的透光开口。要连接的单元图案的模板掩模上的图案线具有设置有至少一个具有小于对应图案线的宽度的突起的至少一个连接端。连接端上的突起由于未对准而减少了暴露图案线中的中断或过度变宽的错误。还公开了用于实施本发明的方法的模板掩模。

38. 发明授权

US5036209A Fabrication method for semiconductor devices and transparent mask for charged particle beam 失效
标题翻译：半导体器件的制造方法和带电粒子束的透明掩模
公开(公告)号：US5036209A
公开(公告)日：1991-07-30
申请号：US424733
申请日：1989-10-20
申请人： Toyotaka Kataoka , Kiichi Sakamoto
发明人： Toyotaka Kataoka , Kiichi Sakamoto
IPC分类号： G03F1/00 , G03F1/20 , G03F7/20 , H01J37/09 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/09 , H01J37/3174 , H01J2237/024 , H01J2237/15 , H01J2237/31776
摘要： A charged particle beam exposure apparatus includes a charged particle beam generator, a deflector device for deflecting the charged particle beam electromagnetically to individually illuminate small areas of a pattern forming region formed on a transparent mask, apparatus for moving the transparent mask mechanically, and the various components required for reducing the charged particle beam pattern through the mask and projecting the same onto a semiconductor device substrate to be exposed. A semiconductor device is fabricated using such apparatus by moving the mask mechanically to position a pattern forming region at a predetermined exposure position. The pattern forming region includes a plurality of small areas which can be individually selected by deflecting the charged particle beam when the pattern forming region is positioned at the exposure position. Each individual area is of a size such that the entirety thereof is exposed when the beam is deflected onto such area.
摘要翻译：在带电粒子束曝光装置中，包括用于产生带电粒子束（20）的装置（21-23），用于电磁地偏转带电粒子束（20）的偏转装置（24）并照射多个构成形成在透明掩模（26）上的多个聚集隔板（27）的一个聚集隔板（27）的小隔板（28）; 用于机械地移动透明掩模（26）的掩模移动装置和用于减小通过掩模（26）图案化的带电粒子束（20）的减少曝光装置（30-34），并将其暴露于半导体器件（35）上），制造半导体器件（35）的方法包括以下步骤：通过掩模移动装置将多个聚集隔板（27）中的一个聚集隔板（27）移动到预定位置; 通过所述偏转装置（24）从所述移动的聚集隔板（27）的所述多个小隔板（28）中选择一个小隔板（28）; 并且通过所述还原曝光装置（30-34）减小所选择的小分区（28）并将其暴露在所述半导体器件（35）上。

39. 发明授权

US5830612A Method of detecting a deficiency in a charged-particle-beam exposure mask 失效
标题翻译：检测带电粒子束曝光掩模缺陷的方法
公开(公告)号：US5830612A
公开(公告)日：1998-11-03
申请号：US711935
申请日：1996-09-11
申请人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
发明人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
IPC分类号： G03F1/00 , G03F1/20 , H01J37/304 , H01J37/317 , G03F9/00 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/86 , H01J37/3045 , H01J37/3174 , G03F1/20 , H01J2237/2817 , H01J2237/31794
摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.
摘要翻译：公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成在将带电粒子束暴露在物体上之前的带电粒子束的横截面。该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

40. 发明授权

US6137111A Charged particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US6137111A
公开(公告)日：2000-10-24
申请号：US84952
申请日：1998-05-28
申请人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
发明人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
IPC分类号： G03F1/00 , G03F1/20 , H01J37/304 , H01J37/317 , G03F9/00 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/86 , H01J37/3045 , H01J37/3174 , G03F1/20 , H01J2237/2817 , H01J2237/31794
摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.
摘要翻译：公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成在将带电粒子束暴露在物体上之前的带电粒子束的横截面。该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

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