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    • 34. 发明申请
    • THRESHOLD OPTIMIZATION FOR FLASH MEMORY
    • 闪存存储器的阈值优化
    • US20140056067A1
    • 2014-02-27
    • US13593811
    • 2012-08-24
    • Fan ZhangMing JinAbdel-Hakim S. Alhussien
    • Fan ZhangMing JinAbdel-Hakim S. Alhussien
    • G11C16/04
    • G11C11/5642G11C16/0483G11C16/3404
    • Described embodiments provide enhanced read accuracy of a multi-level cell (MLC) flash memory. A read request for desired cells is received by a media controller of the memory. The media controller sets m thresholds to initial values, each threshold corresponding to a cell voltage level of the memory, and measures the cell voltage level of a given cell. For each of the desired cells of the memory, the media controller iteratively, until the measured cell voltage level converges on one of the thresholds, compares the measured cell voltage level to the thresholds. If the measured cell voltage level does not converge on one of the thresholds, the media controller updates the thresholds, remeasures the cell voltage level and compares the remeasured cell voltage level to the updated thresholds. Once the measured cell voltage level converges on a threshold, the media controller determines a binary level of the cell.
    • 所描述的实施例提供了多级单元(MLC)闪速存储器的增强的读取精度。 存储器的介质控制器接收对期望单元的读取请求。 介质控制器将m个阈值设置为初始值,每个阈值对应于存储器的单元电压电平,并且测量给定单元的单元电压电平。 对于存储器的每个期望的单元,媒体控制器迭代地,直到所测量的单元电压电平收敛于其中一个阈值,将测量的单元电压电平与阈值进行比较。 如果测量的单元电压电平没有收敛于其中一个阈值,则介质控制器更新阈值,重新测量单元电压电平,并将重新测量的单元电压电平与更新的阈值进行比较。 一旦所测量的电池电压电平收敛于阈值,则介质控制器确定电池的二进制电平。
    • 40. 发明申请
    • Systems and Methods for Read Head Characterization
    • 读取头表征的系统和方法
    • US20120281304A1
    • 2012-11-08
    • US13100063
    • 2011-05-03
    • Ming JinHaitao Xia
    • Ming JinHaitao Xia
    • G11B27/36
    • G11B27/36G11B19/045G11B20/22G11B2220/2516
    • Various embodiments of the present invention provide systems and methods for read sensor characterization. As an example, a data storage device is disclosed that includes a storage medium, a read/write head assembly disposed in relation to the storage medium, and a track width setting circuit. The track width setting circuit is operable to: write data to at least a first track and a second track on the storage medium, read data from the second track, determine an estimated track offset where interference from the data written to the first track is insubstantial, and modify at least the second track width based at least in part on the estimated track offset. The first track is a first track width and the second track is a second track width.
    • 本发明的各种实施例提供用于读取传感器表征的系统和方法。 作为示例,公开了包括存储介质,相对于存储介质设置的读/写头组件和轨道宽度设置电路的数据存储设备。 轨道宽度设置电路可操作用于:将数据写入存储介质上的至少第一磁道和第二磁道,从第二磁道读取数据,确定估计的磁道偏移量,其中写入第一磁道的数据的干扰是非实质的 并且至少部分地基于估计的轨道偏移来修改至少第二轨道宽度。 第一轨道是第一轨道宽度,第二轨道是第二轨道宽度。