专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07780864B2 Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution 失效
标题翻译：使用组合电容和电感耦合等离子体源来控制等离子体离子径向分布的过程
公开(公告)号：US07780864B2
公开(公告)日：2010-08-24
申请号：US11410780
申请日：2006-04-24
申请人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
发明人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/321 , H01J37/32174
摘要： A method of processing a workpiece in the chamber of a plasma reactor in which the plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.
摘要翻译：一种在等离子体反应器的室中处理工件的方法，其中通过调节（VHF）电容耦合功率和电感耦合功率之间的比例来控制处理区域中的等离子体离子密度径向分布，同时继续保持总等离子体源功率的水平。该方法还可以包括对工件应用独立可调的LF偏置功率和HF偏置功率，并通过调整LF和HF偏置功率之间的比例来调节工件表面处离子能量的平均值和总体分布。

32. 发明申请

US20080193673A1 Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode 审中-公开
标题翻译：使用中室气体分配板，调谐等离子体流动控制栅格和电极处理工件的方法
公开(公告)号：US20080193673A1
公开(公告)日：2008-08-14
申请号：US11998458
申请日：2007-11-28
申请人： Alexander M. Paterson , John P. Holland , Theodoros Panagopoulos , Edward P. Hammond , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
发明人： Alexander M. Paterson , John P. Holland , Theodoros Panagopoulos , Edward P. Hammond , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
IPC分类号： H05H1/34
CPC分类号： H01J37/32422 , H01J37/32091 , H01J37/321 , H01J37/32357 , H01J37/32449
摘要： A method of processing a workpiece in a plasma reactor chamber is disclosed. The method includes providing an in-situ gas distribution plate between the workpiece and a ceiling of the chamber that divides the chamber into upper and lower chamber regions. The method further includes providing in the in-situ plate an array of feed-through openings with different opening sizes to present a non-uniform distribution of gas flow resistance for gas flow from the upper chamber region to the lower chamber region. A first process gas is introduced into the upper chamber region and a plasma is generated a plasma in the upper chamber region. A second process gas is introduced in the lower chamber region through gas injection orifices of the in-situ gas distribution plate.
摘要翻译：公开了一种在等离子体反应器室中处理工件的方法。该方法包括在工件和腔室的天花板之间提供原位气体分配板，该室将室分成上腔室和下室区域。该方法还包括在原位板中提供具有不同开口尺寸的馈通开口阵列，以呈现从上室区域到下腔室区域的气流的气流阻力的不均匀分布。将第一工艺气体引入上室区域，并且在上室区域中产生等离子体。第二工艺气体通过原位气体分配板的气体注入孔引入下腔室区域。

33. 发明授权

US06472822B1 Pulsed RF power delivery for plasma processing 失效
标题翻译：用于等离子体处理的脉冲射频功率输送
公开(公告)号：US06472822B1
公开(公告)日：2002-10-29
申请号：US09560108
申请日：2000-04-28
申请人： Jin-Yuan Chen , John P. Holland , Arthur H. Sato , Valentin N. Todorow
发明人： Jin-Yuan Chen , John P. Holland , Arthur H. Sato , Valentin N. Todorow
IPC分类号： H05H146
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A system and method for overcoming the above-described problems relating to the delivery of pulsed RF power to a plasma processing chamber. The power reflected from the chamber is reduced using one or more of the following techniques: (1) varying the RF frequency within a pulse period; (2) ramping up the pulse heights at the leading edge of the pulse train; (3) simultaneously transmitting a relatively low CW signal along with the pulsed signal; and (4) rapidly switching the shunt capacitance within a local matching network within a pulse period. The amount of power delivered to the plasma by the pulses is measured by way of a time-averaging mechanism coupled to a directional coupler connected to the transmission line. The time-averaging mechanism may comprise circuitry to measure temperatures of loads attached to the directional coupler, or analog integrating circuitry attached to the directional coupler, or digital integrating circuitry attached to the directional coupler.
摘要翻译：一种用于克服与脉冲RF功率传递到等离子体处理室相关的上述问题的系统和方法。使用以下一种或多种技术来减小从腔室反射的功率：（1）在脉冲周期内改变RF频率; （2）在脉冲串前缘上升高脉冲高度; （3）同时发送相对较低的CW信号以及脉冲信号; 和（4）在脉冲周期内快速切换局部匹配网络内的并联电容。通过连接到连接到传输线的定向耦合器的时间平均机制来测量由脉冲输送到等离子体的功率量。时间平均机构可以包括用于测量附接到定向耦合器的负载的温度或者连接到定向耦合器的模拟积分电路或附接到定向耦合器的数字积分电路的电路。

34. 发明授权

US08349128B2 Method and apparatus for stable plasma processing 有权
标题翻译：稳定等离子体处理的方法和装置
公开(公告)号：US08349128B2
公开(公告)日：2013-01-08
申请号：US10880754
申请日：2004-06-30
申请人： Valentin N. Todorow , John P. Holland , Michael D. Willwerth
发明人： Valentin N. Todorow , John P. Holland , Michael D. Willwerth
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23F4/00 , C23F1/08 , H01J37/321 , H01J37/32633 , H01L21/67069
摘要： A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.
摘要翻译：本文提供了使用空间修正等离子体蚀刻衬底的方法和设备。在一个实施例中，该方法包括提供具有设置在基板支撑基座上方的等离子体稳定器的处理室。将基板放置在基座上。工艺气体被引入到处理室中，并且从处理气体形成等离子体。用等离子体蚀刻衬底，该等离子体具有由等离子体稳定剂限定的离子密度与自由基密度比。

35. 发明申请

US20090236315A1 SHIELDED LID HEATER ASSEMBLY 有权
标题翻译：屏蔽式加热器总成
公开(公告)号：US20090236315A1
公开(公告)日：2009-09-24
申请号：US12408348
申请日：2009-03-20
申请人： Michael D. Willwerth , David Palagashvili , Valentin N. Todorow , Stephen Yuen
发明人： Michael D. Willwerth , David Palagashvili , Valentin N. Todorow , Stephen Yuen
IPC分类号： B44C1/22 , H05B6/10 , C23C16/46 , C23C14/34
CPC分类号： H01J37/321 , C23C14/22 , C23C16/44 , H01F21/12 , H01J37/32321 , H01J37/32522 , H01J37/32623 , H01J37/32935 , H01J2237/327 , H01J2237/334 , H01L21/67017 , H01L21/67069 , H05B6/02 , H05B6/108
摘要： A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.
摘要翻译：提供适用于等离子体处理室的屏蔽盖加热器盖加热器，具有屏蔽盖加热器的等离子体处理室和等离子体处理方法。该方法和装置增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。在一个实施例中，提供了一种屏蔽盖加热器，其包括铝基座和夹持加热器元件的RF屏蔽。

36. 发明申请

US20090142930A1 Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process 失效
标题翻译：通过在等离子体蚀刻工艺中双重HF / VHF源的有效频率进行栅极分布控制
公开(公告)号：US20090142930A1
公开(公告)日：2009-06-04
申请号：US11998829
申请日：2007-11-30
申请人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
发明人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32091 , H01J37/321 , H01J37/32165 , H01L21/28035
摘要： A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.
摘要翻译：一种在等离子体中处理晶片的方法，其中通过将同时耦合到晶片的VHF和HF功率的相应功率电平设置为相应的最佳电平，在预定的工艺条件下同时实现两个不同等离子体工艺参数的目标值。

37. 发明申请

US20090057269A1 Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection 有权
标题翻译：在具有独立晶片边缘工艺气体注入的等离子体反应器中处理工件的方法
公开(公告)号：US20090057269A1
公开(公告)日：2009-03-05
申请号：US11899613
申请日：2007-09-05
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： C03C25/68
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/3065
摘要： The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
摘要翻译：本公开涉及在晶片边缘处使用独立气体注入来处理工件或在等离子体反应器室中的方法。

38. 发明申请

US20080236490A1 PLASMA REACTOR WITH AN OVERHEAD INDUCTIVE ANTENNA AND AN OVERHEAD GAS DISTRIBUTION SHOWERHEAD 审中-公开
标题翻译：具有超导电感天线和超高压气体分布的等离子体反应器
公开(公告)号：US20080236490A1
公开(公告)日：2008-10-02
申请号：US11693089
申请日：2007-03-29
申请人： ALEXANDER PATERSON , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond , John P. Holland
发明人： ALEXANDER PATERSON , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond , John P. Holland
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , H01J37/32091 , H01J37/321
摘要： A plasma reactor for processing a workpiece includes a gas distribution showerhead having a lid, a manifold having a top surface facing the lid and a bottom surface opposing the top surface. Top surface channels in the manifold top surface form a first set of plural paths extending from a first gas input point to plural path ends of the top surface channels. Gas distribution orifices extend axially through the manifold at respective ones of the path ends. Bottom surface channels in the manifold bottom surface form plural paths extending from locations at each of the gas distribution orifices to plural gas distribution path ends. The showerhead further includes a showerhead piece facing the manifold bottom surface and having plural gas injection orifices extending through the showerhead piece.
摘要翻译：用于加工工件的等离子体反应器包括具有盖的气体分配喷头，具有面向盖的顶表面的歧管和与顶表面相对的底表面。歧管顶表面中的顶表面通道形成从第一气体输入点延伸到顶表面通道的多个路径端的多个路径的第一组。气体分配孔在相应的路径端轴向延伸穿过歧管。歧管底表面中的底表面通道形成从每个气体分配孔处的位置延伸到多个气体分配路径端部的多个路径。淋浴头还包括面向歧管底面的喷头片，并具有延伸穿过喷头片的多个气体喷射孔。

39. 发明申请

US20080206901A1 PULSED-PLASMA SYSTEM WITH PULSED REACTION GAS REPLENISH FOR ETCHING SEMICONDUCTOR STRUCTURES 有权
标题翻译：具有脉冲反应气体的脉冲等离子体系统用于蚀刻半导体结构
公开(公告)号：US20080206901A1
公开(公告)日：2008-08-28
申请号：US11678047
申请日：2007-02-22
申请人： TAE WON KIM , Kyeong-Tae Lee , Alexander Paterson , Valentin N. Todorow , Shashank C. Deshmukh
发明人： TAE WON KIM , Kyeong-Tae Lee , Alexander Paterson , Valentin N. Todorow , Shashank C. Deshmukh
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/31116
摘要： A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish.
摘要翻译：描述了一种具有脉冲反应气体的脉冲等离子体系统，用于蚀刻半导体结构。在一个实施例中，通过施加脉冲等离子体蚀刻工艺去除一部分样品。脉冲等离子体蚀刻工艺包括多个占空比，其中每个占空比表示等离子体的导通状态和断开状态的组合。等离子体由反应气体产生，其中反应气体在等离子体的关闭状态期间补充，而不是在ON状态下补充。在另一个实施例中，通过施加连续的等离子体蚀刻工艺来移除样品的第一部分。然后连续等离子体蚀刻工艺终止，通过施加具有脉冲反应气体补充的脉冲等离子体蚀刻工艺来除去样品的第二部分。

40. 发明申请

US20080206900A1 PULSED-PLASMA SYSTEM FOR ETCHING SEMICONDUCTOR STRUCTURES 有权
标题翻译：用于蚀刻半导体结构的脉冲等离子体系统
公开(公告)号：US20080206900A1
公开(公告)日：2008-08-28
申请号：US11678041
申请日：2007-02-22
申请人： TAE WON KIM , Kyeong-Tae Lee , Alexander Paterson , Valentin N. Todorow , Shashank C. Deshmukh
发明人： TAE WON KIM , Kyeong-Tae Lee , Alexander Paterson , Valentin N. Todorow , Shashank C. Deshmukh
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/31122 , H01L21/67069
摘要： A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is of a duration sufficiently short to substantially inhibit micro-loading in a reaction region adjacent to the sample, while the OFF state of the duty cycle is of a duration sufficiently long to substantially enable removal of a set of etch by-products from the reaction region. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.
摘要翻译：描述了用于蚀刻半导体结构的脉冲等离子体系统。在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。占空比的导通状态具有足够短的持续时间，从而基本上抑制了与样品相邻的反应区域中的微负荷，同时占空比的关闭状态持续足够长，从而基本上能够去除一组蚀刻来自反应区域的副产物。在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式