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31. 发明授权

US5374579A Method of fabricating a semiconductor DRAM 失效
标题翻译：制造半导体DRAM的方法
公开(公告)号：US5374579A
公开(公告)日：1994-12-20
申请号：US108518
申请日：1993-08-18
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/70
CPC分类号： H01L27/10852
摘要： A semiconductor DRAM comprises: a stacked capacitor (41) comprising a storage node electrode (42) a capacitor dielectric film (44) and a plate electrode (43), and formed in a memory cell area of a semiconductor substrate (11); and bit lines (18). A plate electrode forming film (53) having a portion extending over the entire memory cell area (21) or at least over an area including the plate electrode (43) and bit contact forming portions (24) in the memory cell area (21), and contact forming portions (34) in the peripheral circuit area (31) is formed, a second layer insulating film (15) is formed over the plate electrode forming film (53), bit contact holes (25) and contact holes (36) are formed respectively in the bit contact forming portions (24) and the contact forming portions (31) through the plate electrode forming film (53), the side surfaces of the bit contact holes (25) and the contact holes (36) are coated respectively with insulating films (26, 37), conductive plugs (16, 17) are formed in the bit contact holes (25) and the contact holes (36), and bit lines (18) are formed on the second layer insulating film (15) so as to be connected to the conductive plugs (16, 17).
摘要翻译：半导体DRAM包括：层叠电容器（41），包括存储节点电极（42），电容器电介质膜（44）和平板电极（43），并形成在半导体衬底（11）的存储单元区域中。和位线（18）。一种板状电极形成膜（53），其具有在整个存储单元区域（21）上延伸的部分或至少包括存储单元区域（21）中的板状电极（43）和位触点形成部分（24）的区域，在外围电路区域（31）中形成接触形成部（34），在平板电极形成膜（53）上形成第二层绝缘膜（15），钻头接触孔（25）和接触孔）分别通过平板电极形成膜（53）分别形成在位接触形成部分（24）和接触形成部分（31）中，钻头接触孔（25）和接触孔（36）的侧表面是分别涂覆有绝缘膜（26,37）的导电插塞（16,17）形成在钻头接触孔（25）和接触孔（36）中，位线（18）形成在第二层绝缘膜（15），以便连接到导电塞（16,17）。

32. 发明申请

US20150045356A1 PIPERAZINE-SUBSTITUTED BENZOTHIOPHENE DERIVATIVES AS ANTIPSYCHOTIC AGENTS 有权
标题翻译：哌嗪取代的苯并噻吩衍生物作为抗生素代谢物
公开(公告)号：US20150045356A1
公开(公告)日：2015-02-12
申请号：US14343579
申请日：2012-09-07
申请人： Hiroshi Yamashita , Yohji Sakurai , Motoyuki Miyamoto , Yuichi Nakamura , Hideaki Kuroda , Takuya Minowa
发明人： Hiroshi Yamashita , Yohji Sakurai , Motoyuki Miyamoto , Yuichi Nakamura , Hideaki Kuroda , Takuya Minowa
IPC分类号： C07D409/14 , C07D409/12
CPC分类号： A61K31/496 , A61K31/501 , A61K31/506 , A61K31/5377 , A61K31/541 , A61K31/675 , A61K31/695 , C07D409/12 , C07D409/14
摘要： Provided is a superior, novel heterocyclic compound with improved solubility in oil such as sesame oil and benzyl benzoate, which has a broader treatment spectrum, causes less side effects, and is superior in tolerability and safety, and use thereof. A heterocyclic compound represented by the formula (I) wherein each symbol is as defined in the specification, or a salt thereof.
摘要翻译：本发明提供一种具有较好的溶解度的优异的新型杂环化合物，如芝麻油和苯甲酸苄酯，其处理范围更广，副作用更小，耐受性和安全性优异，且使用方便。由式（I）表示的杂环化合物，其中每个符号如说明书中所定义，或其盐。

33. 发明授权

US08227317B2 Semiconductor device manufacturing method and semiconductor device 失效
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US08227317B2
公开(公告)日：2012-07-24
申请号：US12629150
申请日：2009-12-02
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L21/336
CPC分类号： H01L27/105 , H01L21/84 , H01L22/14 , H01L22/20 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L27/1203 , H01L29/78 , H01L29/7855
摘要： A semiconductor device manufacturing method includes the steps of: forming a transistor on a surface side of a silicon layer of a silicon-on-insulator substrate, the silicon-on-insulator substrate being formed by laminating a substrate, an insulating layer, and the silicon layer; forming a first insulating film covering the transistor and a wiring section including a part electrically connected to the transistor on the silicon-on-insulator substrate; measuring a threshold voltage of the transistor through the wiring section; forming a supporting substrate on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; removing at least a part of the substrate and the insulating layer on a back side of the silicon-on-insulator substrate; and adjusting the threshold voltage of the transistor on a basis of the measured threshold voltage.
摘要翻译：半导体器件制造方法包括以下步骤：在绝缘体上硅衬底的硅层的表面侧上形成晶体管，绝缘体上硅衬底通过层叠衬底，绝缘层和硅层; 形成覆盖晶体管的第一绝缘膜和包括与绝缘体上硅基板上的晶体管电连接的部分的布线部分; 通过所述布线部分测量所述晶体管的阈值电压; 在所述第一绝缘膜的表面上形成支撑衬底，其中所述第二绝缘膜置于所述支撑衬底和所述第一绝缘膜之间; 在绝缘体上硅衬底的背面去除衬底和绝缘层的至少一部分; 以及基于测量的阈值电压来调整晶体管的阈值电压。

34. 发明授权

US08129544B2 1-substituted-4-nitroimidazole compound and method for preparing the same 有权
标题翻译： 1-取代-4-硝基咪唑化合物及其制备方法
公开(公告)号：US08129544B2
公开(公告)日：2012-03-06
申请号：US11905446
申请日：2007-10-01
申请人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D407/06
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH2RA的基团; X是卤素原子或基团-S（O）n -R1）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

35. 发明授权

US08071600B2 Derivatives of 4-piperazin-1-yl-4-benzo[B]thiophene suitable for the treatment of CNS disorders 有权
标题翻译：适用于治疗CNS疾病的4-哌嗪-1-基-4-苯并[b]噻吩的衍生物
公开(公告)号：US08071600B2
公开(公告)日：2011-12-06
申请号：US11991146
申请日：2006-08-31
申请人： Hiroshi Yamashita , Hideaki Kuroda , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Haruka Takahashi , Tae Fukushima , Satoshi Shimizu , Kazumi Kondo , Yohji Sakurai , Takeshi Kuroda , Shinichi Taira , Motohiro Itotani , Tatsuyoshi Tanaka
发明人： Hiroshi Yamashita , Hideaki Kuroda , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Haruka Takahashi , Tae Fukushima , Satoshi Shimizu , Kazumi Kondo , Yohji Sakurai , Takeshi Kuroda , Shinichi Taira , Motohiro Itotani , Tatsuyoshi Tanaka
IPC分类号： A61K31/496 , A61K31/55 , A61K31/551 , C07D333/54 , C07D409/12 , C07D409/14 , A61K31/536 , A61K31/5415 , C07D407/12 , C07D413/12 , C07D417/12
CPC分类号： C07D409/12 , C07D333/54 , C07D407/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D487/08 , C07D491/113
摘要： A heterocyclic compound or a salt thereof represented by the formula (1): where R2 represents a hydrogen atom or a lower alkyl group; A represents a lower alkylene group or lower alkenylene group; and R1 represents an aromatic group or a heterocyclic group. The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.
摘要翻译：由式（1）表示的杂环化合物或其盐：其中R 2表示氢原子或低级烷基; A表示低级亚烷基或低级亚烯基; R1表示芳基或杂环基。本发明的化合物具有广泛的精神障碍治疗范围，包括中枢神经系统疾病，无副作用和高安全性。

36. 发明授权

US07807843B2 1-substituted-4-nitroimidazole compound and method for preparing the same 失效
标题翻译： 1-取代-4-硝基咪唑化合物及其制备方法
公开(公告)号：US07807843B2
公开(公告)日：2010-10-05
申请号：US12007776
申请日：2008-01-15
申请人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D407/06
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH2RA的基团; X是卤素原子或基团-S（O）n -R1）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

37. 发明授权

US07586241B2 Electroacoustic transducer 有权
标题翻译：电声换能器
公开(公告)号：US07586241B2
公开(公告)日：2009-09-08
申请号：US12126022
申请日：2008-05-23
申请人： Hideaki Kuroda , Yoshihiro Sonoda
发明人： Hideaki Kuroda , Yoshihiro Sonoda
IPC分类号： H01L41/08
CPC分类号： H04R17/10
摘要： An electroacoustic transducer having one end portion of a first piezoelectric element and one end portion of a second piezoelectric element fixed to a frame such that the first piezoelectric element and the second piezoelectric element are supported by the frame in an opening of the frame in the cantilever manner. A flexible thin film is bonded to the frame and the first and second piezoelectric elements so that it covers at least a gap between each of the piezoelectric elements and the frame. The other end portions of the piezoelectric elements are free end portions, and face each other with a gap therebetween.
摘要翻译：一种电声换能器，其具有第一压电元件的一个端部和固定到框架的第二压电元件的一个端部，使得第一压电元件和第二压电元件由框架支撑在悬臂中的框架的开口中方式。柔性薄膜结合到框架和第一和第二压电元件，使得它覆盖每个压电元件和框架之间的至少间隙。压电元件的另一端部是自由端部，并且彼此面对地间隔开。

38. 发明申请

US20080097107A1 1-substituted-4-nitroimidazole compound and method for preparing the same 有权
标题翻译： 1-取代-4-硝基咪唑化合物及其制备方法
公开(公告)号：US20080097107A1
公开(公告)日：2008-04-24
申请号：US11905446
申请日：2007-10-01
申请人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D233/92
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH 2的基团， X是卤素原子或式-S（O）n R 1）的基团）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

39. 发明授权

US06806626B2 Electronic component 失效
标题翻译：电子元器件
公开(公告)号：US06806626B2
公开(公告)日：2004-10-19
申请号：US09971034
申请日：2001-10-05
申请人： Shungo Morinaga , Ryuhei Yoshida , Hideaki Kuroda
发明人： Shungo Morinaga , Ryuhei Yoshida , Hideaki Kuroda
IPC分类号： H01L4108
CPC分类号： H03H9/178 , H01L41/0475 , H03H9/177
摘要： In a piezoelectric resonator, first and second resonance electrodes are provided on the upper surface and the lower surface of a piezoelectric member, inner electrode layers for leading the first and second resonance electrodes to the upper and lower surfaces are provided and extend to the upper and lower surfaces of the piezoelectric member, and connecting electrodes are provided on the upper and lower surfaces of the piezoelectric member, and are electrically connected to the corresponding resonance electrodes via the inner electrode layers.
摘要翻译：在压电谐振器中，第一和第二谐振电极设置在压电元件的上表面和下表面上，用于将第一和第二谐振电极引导到上表面和下表面的内电极层延伸到上，压电构件的下表面和连接电极设置在压电构件的上表面和下表面上，并且经由内电极层电连接到相应的谐振电极。

40. 发明授权

US06800527B2 One time programmable semiconductor nonvolatile memory device and method for production of same 有权
标题翻译：一次可编程半导体非易失性存储器件及其制造方法
公开(公告)号：US06800527B2
公开(公告)日：2004-10-05
申请号：US10366564
申请日：2003-02-14
申请人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
发明人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
IPC分类号： H01L218236
CPC分类号： G11C17/16 , G11C2213/33 , G11C2213/71 , G11C2213/77 , G11C2213/79 , H01L27/112 , H01L2224/48091 , H01L2225/06568 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.
摘要翻译：一种提高氧化硅膜的绝缘破坏的再现性和可靠性的能够降低制造成本的半导体非易失性存储器件及其制造方法，其中以矩阵形式布置的每个存储单元具有绝缘膜破损型保险丝，其包括形成在半导体衬底上的第一导电类型的杂质区，形成在所述半导体衬底上的第一绝缘膜，同时覆盖所述杂质区;形成在所述第一绝缘膜中的开口以到达所述杂质区;以及第一绝缘膜第一导电类型的半导体层，第二绝缘膜和第二导电类型的第二半导体层，其从杂质区侧连续地堆叠在开口中，或者具有包含第一导电性的杂质区的绝缘膜断裂型熔丝键入具有SOI结构的第一半导体层，第一绝缘膜在SOI层上，到达杂质区的开口，以及层叠在开口中的第二绝缘膜和第二导电类型的第二半导体层。

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