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31. 发明授权

US08937325B2 Semiconductor device, wafer, method for manufacturing semiconductor device, and method for manufacturing wafer 有权
标题翻译：半导体器件，晶片，半导体器件的制造方法以及晶片的制造方法
公开(公告)号：US08937325B2
公开(公告)日：2015-01-20
申请号：US13406740
申请日：2012-02-28
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked body is provided between the first layer and the light emitting unit. The first stacked body includes a plurality of third layers including AlGaInN, and a plurality of fourth layers alternately stacked with the third layers and including GaInN. The first stacked body has a first surface facing the light emitting unit. The first stacked body has a depression provided in the first surface. A part of the light emitting unit is embedded in a part of the depression. A part of the second layer is disposed on the part of the light emitting unit.
摘要翻译：根据一个实施例，半导体器件包括包括氮化物半导体的n型第一层，包括氮化物半导体的p型第二层，发光单元和第一层叠体。发光单元设置在第一和第二层之间。第一层叠体设置在第一层和发光单元之间。第一层叠体包括多个包含AlGaInN的第三层和与第三层交替堆叠并包括GaInN的多个第四层。第一层叠体具有面向发光单元的第一表面。第一层叠体具有设置在第一表面中的凹陷。发光单元的一部分嵌入凹部的一部分。第二层的一部分设置在发光单元的一部分上。

32. 发明授权

US08921886B2 Semiconductor light emitting device, semiconductor light emitting apparatus, and method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光器件，半导体发光器件和半导体发光器件的制造方法
公开(公告)号：US08921886B2
公开(公告)日：2014-12-30
申请号：US13204021
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/00 , H01L33/40
CPC分类号： H01L33/405 , H01L24/32 , H01L33/40 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0016 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体和电极。叠层结构体具有包括氮化物系半导体的第一导电型第一半导体层，包含氮化物系半导体的第二导电型第二半导体层和设置在第一半导体层与第二半导体层之间的发光层。电极具有第一，第二和第三金属层。第一金属层设置在第二半导体层上并且包括银或银合金。第二金属层设置在第一金属层上，并且包括铂，钯，铑，铱，钌，锇中的至少一种元素。第三金属层设置在第二金属层上。沿第一至第二半导体层的方向的第三金属层的厚度等于或大于第二金属层的厚度。

33. 发明授权

US08791498B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08791498B2
公开(公告)日：2014-07-29
申请号：US12719464
申请日：2010-03-08
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface.
摘要翻译：一种半导体发光器件，包括：堆叠结构单元，包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在其间的发光层; 以及包括第一和第二金属层的电极，所述第一金属层包括银或银合金，并且设置在与所述发光层相对的所述第二半导体层的一侧，所述第二金属层包括选自金的至少一种元素，铂，钯，铑，铱，钌和锇，并且设置在与第二半导体层相对的第一金属层的一侧。包括第一和第二半导体层之间的界面的区域中的元素的浓度高于在第一金属层远离界面的区域中的元素的浓度。

34. 发明授权

US08377724B2 Method for producing semiconductor light-emitting element 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08377724B2
公开(公告)日：2013-02-19
申请号：US12929365
申请日：2011-01-19
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/387 , H01L33/40 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
摘要： A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.
摘要翻译：半导体发光元件包括：第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，连接到第一半导体层的第一电极和第二电极，在第二半导体层上。面向第二半导体层的第二电极的一侧由银和银合金中的至少一种构成。第二电极具有在与第二半导体层相对的第二电极的平面中具有发光波长或更小的发光波长的空隙。

35. 发明授权

US08324611B2 Semiconductor light emitting device and wafer 有权
标题翻译：半导体发光器件和晶圆
公开(公告)号：US08324611B2
公开(公告)日：2012-12-04
申请号：US13137728
申请日：2011-09-08
申请人： Kei Kaneko , Yasuo Ohba , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Kei Kaneko , Yasuo Ohba , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L29/06
CPC分类号： H01L33/0025 , H01L33/06 , H01L33/325
摘要： A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.
摘要翻译：半导体发光器件包括由n型GaN和n型AlGaN中的至少一种构成的第一层; 由含Mg的p型AlGaN制成的第二层; 以及设置在第一层和第二层之间的发光部。发光部包括由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）构成的多个阻挡层，以及设置在每对多个阻挡层并由GaInN或AlGaInN制成。多个阻挡层具有最近的阻挡层和远的阻挡层。最近的阻挡层最接近多个阻挡层中的第二层。最近的阻挡层包括第一部分和第二部分。第一部分由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）制成。第二部分设置在第一部分和第二层之间，并由Al x Ga 1-x-y In y N（0＆lt; n 1; x，0＆n 1; y，x + y和n 1; 1）制成。第二部分中的Si浓度低于第一部分中的Si浓度，并且低于远阻隔层中的Si浓度。

36. 发明申请

US20110117684A1 Semiconductor light-emitting element and method for producing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20110117684A1
公开(公告)日：2011-05-19
申请号：US12929365
申请日：2011-01-19
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/387 , H01L33/40 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
摘要： A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.
摘要翻译：半导体发光元件包括：第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，连接到第一半导体层的第一电极和第二电极，在第二半导体层上。面向第二半导体层的第二电极的一侧由银和银合金中的至少一种构成。第二电极具有在与第二半导体层相对的第二电极的平面中具有发光波长或更小的发光波长的空隙。

37. 发明授权

US07902565B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07902565B2
公开(公告)日：2011-03-08
申请号：US12195580
申请日：2008-08-21
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
IPC分类号： H01L51/40
CPC分类号： H01L33/405 , H01L33/32 , H01L33/38 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05166 , H01L2224/05169 , H01L2224/05568 , H01L2224/05644 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light emitting device includes: a laminated body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the laminated body and connected to the first semiconductor layer; and a second electrode provided on the first major surface of the laminated body and connected to the second semiconductor layer. The first electrode includes: a first region provided on the first semiconductor layer and including a first metal film; and a second region provided on the first semiconductor layer and including a second metal film, the second metal film having a higher reflectivity for light emitted from the light emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film.
摘要翻译：半导体发光器件包括：层叠体，包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层; 第一电极，设置在所述层叠体的第一主表面上并与所述第一半导体层连接; 以及设置在所述层叠体的所述第一主表面上并与所述第二半导体层连接的第二电极。第一电极包括：设置在第一半导体层上并包括第一金属膜的第一区域; 以及第二区域，设置在所述第一半导体层上并且包括第二金属膜，所述第二金属膜对于从所述发光层发射的光比所述第一金属膜具有更高的反射率，并且相对于所述第一半导体具有较高的接触电阻层比第一金属膜。

38. 发明申请

US20090057707A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090057707A1
公开(公告)日：2009-03-05
申请号：US12195580
申请日：2008-08-21
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/38 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05166 , H01L2224/05169 , H01L2224/05568 , H01L2224/05644 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light emitting device includes: a laminated body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the laminated body and connected to the first semiconductor layer; and a second electrode provided on the first major surface of the laminated body and connected to the second semiconductor layer. The first electrode includes: a first region provided on the first semiconductor layer and including a first metal film; and a second region provided on the first semiconductor layer and including a second metal film, the second metal film having a higher reflectivity for light emitted from the light emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film.
摘要翻译：半导体发光器件包括：层叠体，包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层; 第一电极，设置在所述层叠体的第一主表面上并与所述第一半导体层连接; 以及设置在所述层叠体的所述第一主表面上并与所述第二半导体层连接的第二电极。第一电极包括：设置在第一半导体层上并包括第一金属膜的第一区域; 以及第二区域，设置在所述第一半导体层上并且包括第二金属膜，所述第二金属膜对于从所述发光层发射的光比所述第一金属膜具有更高的反射率，并且相对于所述第一半导体具有较高的接触电阻层比第一金属膜。

39. 发明授权

US08569738B2 Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer 有权
标题翻译：半导体发光器件，晶片，半导体发光器件的制造方法以及晶片的制造方法
公开(公告)号：US08569738B2
公开(公告)日：2013-10-29
申请号：US12876685
申请日：2010-09-07
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Alx1Ga1-x1-y1Iny1N (0
摘要翻译：根据一个实施例，半导体发光器件包括第一层，第二层和发光部分。第一层包括n型GaN和n型AlGaN中的至少一种。第二层包括p型AlGaN。发光部分具有单个量子阱结构。单量子阱结构包括第一阻挡层，第二阻挡层和阱层。第一阻挡层设置在第一层和第二层之间，并且包括Al x Ga 1-x-y 1 In y 1 N（0

40. 发明申请

US20130146914A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING APPARATUS AND SEMICONDUCTOR LIGHT EMITTING APPARATUS 有权
公开(公告)号：US20130146914A1
公开(公告)日：2013-06-13
申请号：US13679109
申请日：2012-11-16
申请人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/58
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2224/05001 , H01L2224/05124 , H01L2224/05139 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/16145 , H01L2224/32013 , H01L2224/48091 , H01L2224/73265 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2924/00014 , H01L2924/013
摘要： A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.

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