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    • 32. 发明授权
    • Functional form and process for the production of the same
    • 功能形式和生产过程相同
    • US6156817A
    • 2000-12-05
    • US437572
    • 1999-11-10
    • Hiroshi OkamotoShin-ichi InoueKimi YoshidaHiroki MiyamatsuMasataka Sano
    • Hiroshi OkamotoShin-ichi InoueKimi YoshidaHiroki MiyamatsuMasataka Sano
    • C08K5/00C08K5/07C08K3/40C08K5/13
    • C08K5/0008
    • A functional form according to the present invention is disclosed, containing a melt form of a forming resin (Y) compounded with a functional component (a) having antimicrobial properties or deodorizing properties, selected from the group consisting of a catechin, a saponin, a tea-leaf powder, a tea-leaf extract, and tannin (tannic acid), and a ceramics component (b). A process for the production of a functional form is also disclosed, including melt forming a forming resin (Y) compounded with a functional component (a) having antimicrobial properties or deodorizing properties, selected from the group consisting of a catechin, a saponin, a tea-leaf powder, a tea-leaf extract, and tannin (tannic acid), and a ceramics component (b). According to the present invention, the elution of functional components (such as catechins and saponins) can be controlled even after water washing and their functionalities can be maintained (such as antimicrobial properties or deodorizing properties) over a long period of time.
    • 公开了本发明的功能性形式,其含有与具有抗微生物特性或除臭性能的功能性成分(a)配合的成型树脂(Y)的熔融形式,其选自儿茶素,皂苷, 茶叶粉,茶叶提取物,单宁酸(单宁酸)和陶瓷成分(b)。 还公开了一种制备功能性形式的方法,包括熔融形成与具有抗微生物性质或除臭性能的功能性组分(a)复合的成型树脂(Y),其选自儿茶素,皂角苷, 茶叶粉,茶叶提取物,单宁酸(单宁酸)和陶瓷成分(b)。 根据本发明,即使在水洗后也可以控制功能成分(如儿茶素类和皂苷)的洗脱,并且能够长时间保持其功能(如抗菌性或除臭性)。
    • 33. 发明授权
    • Method of preparing an enzyme participating in C-terminal amidation
    • 制备参与C-末端酰胺化的酶的方法
    • US6156555A
    • 2000-12-05
    • US172120
    • 1998-10-14
    • Toshii IidaToshihiko KaminumaYuka FuseMasahiro TajimaMitsuo YanagiHiroshi OkamotoJiro KishimotoOhji IfukuIchiro Kato
    • Toshii IidaToshihiko KaminumaYuka FuseMasahiro TajimaMitsuo YanagiHiroshi OkamotoJiro KishimotoOhji IfukuIchiro Kato
    • C07K1/107C12N9/02C12N15/53C12N15/60C12N9/48C12N9/14C12N9/78C12N9/80C12N15/00
    • C12N9/0071C07K1/107C12Y114/17003Y10S435/814Y10S435/815
    • A purified enzyme-I is obtained that participates in C-terminal amidation by acting on a peptide C-terminal glycine adduct to form a peptide C-terminal .alpha.-hydroxyglycine adduct. The enzyme has an optimum pH of about 5 to 7, an optimum temperature of 25 to 40.degree. C. and a molecular weight of about 25 kDa or about 36 kDa, and metal ions and ascorbic acid act as a cofactor. A purified enzyme-II is obtained that participates in C-terminal amidation by acting on the peptide C-terminal .alpha.-hydroxyglycine adduct to produce a C-terminal amidated compound. The enzyme has an optimum pH of about 5 to 6, an optimum temperature of 15 to 35.degree. C. and a molecular weight of about 40 kDa or about 43 kDa. Enzyme-I does not act on the peptide C-terminal .alpha.-hydroxyglycine adduct and enzyme-II does not act on the peptide C-terminal glycine adduct. The enzymes may be purified from a biological material such as horse serum by affinity chromatography using a peptide C-terminal glycine adduct as a ligand. The enzymes may also be obtained from host cells transformed with a plasmid containing a cDNA coding for the enzymes. Assay of activity of the enzymes is carried out by measuring the C-terminal .alpha.-hydroxyglycine adduct or the C-terminal amidated compound that has been isolated such as by high performance liquid chromatography with the use of an acetonitrile-containing buffer.
    • 获得通过作用于肽C-末端甘氨酸加合物以形成肽C末端α-羟基甘氨酸加合物参与C-末端酰胺化的纯化的酶I. 酶的最佳pH为约5至7,最适温度为25至40℃,分子量为约25kDa或约36kDa,金属离子和抗坏血酸用作辅因子。 获得了通过作用于肽C-末端α-羟基甘氨酸加合物参与C-末端酰胺化产生C末端酰胺化合物的纯化的酶-II。 酶的最佳pH为约5至6,最适温度为15至35℃,分子量为约40kDa或约43kDa。 酶-I不对肽C-端α-羟基甘氨酸加合物起作用,酶-II不对肽C-末端甘氨酸加合物起作用。 可以使用肽C-末端甘氨酸加合物作为配体通过亲和层析从生物材料如马血清中纯化酶。 酶也可以从用含有编码酶的cDNA的质粒转化的宿主细胞获得。 酶的活性测定是通过使用含有乙腈的缓冲液,通过高分辨液相色谱法测定已分离的C末端α-羟基甘氨酸加成物或C末端酰胺化合物进行的。
    • 34. 发明授权
    • Computer sewing machine and method of controlling the same
    • 电脑缝纫机及其控制方法
    • US6135038A
    • 2000-10-24
    • US344242
    • 1999-06-25
    • Hiroshi Okamoto
    • Hiroshi Okamoto
    • D05B19/02D05B19/10D05B19/12D05B21/00
    • D05B19/12D05B19/02D05B19/105
    • A high-functional computer sewing machine can be obtained at a low cost. The inventive computer sewing machine comprises a data signal input/output part and a control part. The data signal input/output part transmits/receives a data signal to/from an externally set data input/output unit by data communication through any of a transmission line, radio and light. The control part controls the operation of a sewing machine body on the basis of the data signal from the data input/output unit received by the data signal input/output part. Thus, when using a commercially available game machine or the like as the data input/output unit, no data input/output unit dedicated to the sewing machine need be separately purchased while the sewing machine body need not be provided with a high-priced liquid crystal touch panel for inputting data.
    • 可以以低成本获得高功能的电脑缝纫机。 本发明的计算机缝纫机包括数据信号输入/输出部分和控制部分。 数据信号输入/输出部分通过传输线,无线电和光线中的任何一个通过数据通信向外部设置的数据输入/输出单元发送/接收数据信号。 控制部根据由数据信号输入输出部接收到的数据输入输出部的数据信号来控制缝纫机主体的动作。 因此,当使用市售的游戏机等作为数据输入/输出单元时,不需要单独购买专用于缝纫机的数据输入/输出单元,而缝纫机主体不需要设置高价液体 水晶触摸屏,用于输入数据。
    • 38. 发明授权
    • Coupled housing type connector
    • 联轴器式连接器
    • US5571032A
    • 1996-11-05
    • US311061
    • 1994-09-23
    • Takahiro SanoHiroshi Okamoto
    • Takahiro SanoHiroshi Okamoto
    • H01R13/42H01R13/502H01R13/52H01R13/40
    • H01R13/5208H01R13/521
    • This invention is intended to provide a coupled housing type connector, whose housing is split in two, an outer housing and an inner housing, so that by coupling the split housing portions together, terminals can easily be inserted and fitted in position even when the terminal locking position lies in a narrow and deep structure of the connector. Wires that are passed through the sealing rubber plug are connected with the terminals, which are installed in the terminal accommodating chambers in the inner housing. The inner housing and the rubber plug are fitted into the outer housing so that the electric contact portions of the terminals project from the terminal leadout openings formed in the partition wall of the outer housing.
    • 本发明旨在提供一种耦合的壳体型连接器,其壳体分为两部分,外部壳体和内部壳体,使得通过将分离的壳体部分联接在一起,即使端子 锁定位置位于连接器的窄而深的结构中。 穿过密封橡胶塞的电线与安装在内壳中的端子容纳室中的端子连接。 内壳体和橡胶塞被装配到外壳中,使得端子的电接触部分从形成在外壳的隔壁中的端子引出开口突出。
    • 39. 发明授权
    • On-chip screen type solid state image sensor and manufacturing method
thereof
    • 片上屏幕型固态图像传感器及其制造方法
    • US5514888A
    • 1996-05-07
    • US67507
    • 1993-05-24
    • Yoshikazu SanoHiroshi Okamoto
    • Yoshikazu SanoHiroshi Okamoto
    • H01L31/0216H01L31/0232H01L27/148H01L29/768
    • H01L27/14623H01L27/14621H01L27/14627H01L27/14685H01L27/14687
    • A first P-type diffusion layer is formed on a semiconductor substrate. A photodiode is formed thereon. A transfer channel is formed on the semiconductor substrate. Agate insulating film is grown from a silicon oxide film on the semiconductor substrate. A transfer gate electrode is formed on the gate insulating film by patterning polysilicon. A light-shielding film of a metallic evaporation film is formed on the transfer gate electrode so that light cannot enter the transmission channel only to be a smear component. A difference in level of about 2 to 4 .mu.m is formed on the semiconductor substrate of the transfer channel due to the transfer gate electrode and the light-shielding film. An underlying smooth layer is formed to smooth the surface difference in level, and a first light-shielding layer is formed on it. A transparent film is formed on it, and a third light-shielding layer is formed via a second light-shielding layer and a transparent film. Further, a transparent film having the same material and the same film thickness as the above transparent film covers the third light-shielding layer, and then is smoothed. An on-chip lens is formed on it. Thus, a negative influence of a flare light can be prevented.
    • 第一P型扩散层形成在半导体衬底上。 在其上形成光电二极管。 在半导体衬底上形成传输沟道。 玛瑙绝缘膜从半导体衬底上的氧化硅膜生长。 通过图案化多晶硅在栅极绝缘膜上形成传输栅电极。 在转移栅电极上形成金属蒸发膜的遮光膜,使得光不能进入透射通道,只能成为涂抹部件。 由于传输栅电极和遮光膜,在传输沟道的半导体衬底上形成约2至4μm的电平差。 形成下面的平滑层以平滑表面的水平差,并且在其上形成第一遮光层。 在其上形成透明膜,经由第二遮光层和透明膜形成第三遮光层。 此外,具有与上述透明膜相同的材料和相同膜厚的透明膜覆盖第三遮光层,然后被平滑化。 在其上形成片上透镜。 因此,可以防止火炬光的负面影响。