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    • 31. 发明申请
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US20070010036A1
    • 2007-01-11
    • US11480895
    • 2006-07-06
    • Taichi EndoTeruyuki FujiiKiyofumi Ogino
    • Taichi EndoTeruyuki FujiiKiyofumi Ogino
    • H01L21/00
    • G03F7/2024G03F7/0007H01L27/3244H01L51/5284H01L2251/5315
    • It is an object of the present invention to provide a method for manufacturing a semiconductor device that can suppress generation of a crack and peeling in a resin BM and deterioration of coverage of an upper layer of the resin BM, even if a black resin is used as a material of the resin BM in order to improve a contrast of brightness and a contrast of color. As a method for manufacturing a semiconductor device, a non-photosensitive black resin layer is formed over a substrate, a positive resist film is formed over the non-photosensitive black resin layer, the positive resist film is exposed, a resin black matrix layer made of the non-photosensitive black resin layer is formed over the substrate by developing the positive resist film by using a first developing solution and by etching the non-photosensitive black resin layer, a non-exposed positive resist film over the resin black matrix layer, which remains after the development, is exposed, and the positive resist film is removed by using a second developing solution.
    • 本发明的目的是提供一种半导体器件的制造方法,即使使用黑色树脂,也能够抑制树脂BM的裂纹产生和树脂BM的剥离以及树脂BM的上层的覆盖的劣化 作为树脂BM的材料,以提高亮度的对比度和颜色的对比度。 作为半导体器件的制造方法,在基板上形成非感光性黑色树脂层,在非感光性黑色树脂层上形成正性抗蚀剂膜,曝光正性抗蚀剂膜,使树脂黑色矩阵层 通过使用第一显影液显影正性抗蚀剂膜并通过在树脂黑色矩阵层上蚀刻非感光性黑色树脂层,未曝光的正性抗蚀剂膜,在基材上形成非感光性黑色树脂层, 在显影后保留,曝光,通过使用第二显影液除去正性抗蚀剂膜。