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31. 发明授权

US6115293A Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US6115293A
公开(公告)日：2000-09-05
申请号：US419066
申请日：1999-10-15
申请人： Minoru Yamashita
发明人： Minoru Yamashita
IPC分类号： G11C16/06 , G11C16/04 , G11C29/04 , H01L27/115 , G11C7/00
CPC分类号： G11C16/0441
摘要： A non-volatile semiconductor memory device includes a first cell including a first floating-gate type transistor having a first threshold voltage, and a second cell including a second floating-gate type transistor having a second threshold voltage different from the first threshold voltage. Data is stored by a difference between a first current flowing in the first cell and a second current flowing in the second cell.
摘要翻译：非易失性半导体存储器件包括具有第一阈值电压的第一浮栅型晶体管的第一单元和包括具有与第一阈值电压不同的第二阈值电压的第二浮栅型晶体管的第二单元。通过在第一单元中流动的第一电流与在第二单元中流动的第二电流之间的差来存储数据。

32. 发明授权

US5910916A Flash-erasable semiconductor memory device having improved reliability 失效
标题翻译：闪存可擦除半导体存储器件具有改进的可靠性
公开(公告)号：US5910916A
公开(公告)日：1999-06-08
申请号：US986339
申请日：1997-12-05
申请人： Takao Akaogi , Yasushige Ogawa , Tatsuya Kajita , Hisayoshi Watanabe , Minoru Yamashita
发明人： Takao Akaogi , Yasushige Ogawa , Tatsuya Kajita , Hisayoshi Watanabe , Minoru Yamashita
IPC分类号： G11C16/08 , G11C16/10 , G11C16/16 , G11C16/30 , G11C16/32 , G11C29/00 , H01L21/8247 , H01L27/105 , H01L27/115 , G11C16/00
CPC分类号： H01L27/11526 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/30 , G11C16/32 , G11C29/846 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A flash-erasable semiconductor memory device comprises a memory cell array including a plurality of memory cell transistors each having an insulated floating gate for storing information and a control electrode provided on said floating gate, wherein the flash-erasable semiconductor memory device includes a write control circuit supplied with a write control signal, when writing information. The write control circuit produces a control signal such that a leading edge of the drain control signal appears after a leading edge of the gate control signal. Further, the gate control circuit shuts off the gate control signal such that a trailing edge of the gate control signal appears after a trailing edge of the drain control signal.
摘要翻译：闪存可擦除半导体存储器件包括存储单元阵列，其包括多个存储单元晶体管，每个存储单元晶体管具有用于存储信息的绝缘浮动栅极和设置在所述浮置栅极上的控制电极，其中闪存可擦除半导体存储器件包括写入控制电路提供写入控制信号时，写入信息。写入控制电路产生控制信号，使得漏极控制信号的前沿出现在栅极控制信号的前沿之后。此外，栅极控制电路关闭栅极控制信号，使得栅极控制信号的后沿出现在漏极控制信号的后沿之后。

33. 发明授权

US5835416A Flash-erasable semiconductor memory device having an improved reliability 失效
公开(公告)号：US5835416A
公开(公告)日：1998-11-10
申请号：US986338
申请日：1997-12-05
申请人： Takao Akaogi , Yasushige Ogawa , Tatsuya Kajita , Hisayoshi Watanabe , Minoru Yamashita
发明人： Takao Akaogi , Yasushige Ogawa , Tatsuya Kajita , Hisayoshi Watanabe , Minoru Yamashita
IPC分类号： G11C16/08 , G11C16/10 , G11C16/16 , G11C16/30 , G11C16/32 , G11C29/00 , H01L21/8247 , H01L27/105 , H01L27/115 , G11C16/00
CPC分类号： H01L27/11526 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/30 , G11C16/32 , G11C29/846 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A flash-erasable semiconductor memory device comprises a memory cell array including a plurality of memory cell transistors each having an insulated floating gate for storing information and a control electrode provided on said floating gate, wherein the flash-erasable semiconductor memory device includes a write control circuit supplied with a write control signal, when writing information. The write control circuit produces a control signal such that a leading edge of the drain control signal appears after a leading edge of the gate control signal. Further, the gate control circuit shuts off the gate control signal such that a trailing edge of the gate control signal appears after a trailing edge of the drain control signal.

34. 发明申请

US20080144388A1 Nonvolatile storage device and control method thereof 有权
标题翻译：非易失性存储装置及其控制方法
公开(公告)号：US20080144388A1
公开(公告)日：2008-06-19
申请号：US11986331
申请日：2007-11-20
申请人： Minoru Yamashita
发明人： Minoru Yamashita
IPC分类号： G11C16/04
CPC分类号： G11C16/28 , G11C16/3454 , G11C16/3459
摘要： A nonvolatile memory device that responds to a decrease in electric charge stored in memory cells attributed to the charge loss phenomenon occurring during program operation by adjusting the level of a program verify operation according to the degree of the charge loss so that the program operation can be performed with little (if any) interruption.
摘要翻译：一种非易失性存储器件，其响应于由于在编程操作期间发生的电荷损失现象而存储在存储器单元中的电荷减少，通过根据电荷损失的程度调节程序验证操作的电平，使得程序操作可以执行很少（如果有）中断。

35. 发明授权

US06639849B2 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell 有权
标题翻译：非易失性半导体存储器件根据第一动态参考单元的阈值编程第二动态参考单元
公开(公告)号：US06639849B2
公开(公告)日：2003-10-28
申请号：US10356495
申请日：2003-02-03
申请人： Satoshi Takahashi , Minoru Yamashita
发明人： Satoshi Takahashi , Minoru Yamashita
IPC分类号： G11C1604
CPC分类号： G11C7/14 , G11C16/0475 , G11C16/28
摘要： In a nonvolatile semiconductor memory device, first and second dynamic reference cells are subjected to a same rewriting operation as performed to a memory cell. An average reference current is obtained from the first and second dynamic reference cells, and is compared with a current of data read from the memory cell so as to judge a level of the read data. In this configuration, the second dynamic reference cell is programmed according to a threshold value of the first dynamic reference cell.
摘要翻译：在非易失性半导体存储器件中，第一和第二动态参考单元经受与存储单元相同的重写操作。从第一和第二动态参考单元获得平均参考电流，并将其与从存储器单元读取的数据的电流进行比较，以便判断所读取的数据的电平。在该配置中，第二动态参考单元根据第一动态参考单元的阈值被编程。

36. 发明授权

US5295653A Vibration insulator having bracket 失效
标题翻译：振动绝缘子带支架
公开(公告)号：US5295653A
公开(公告)日：1994-03-22
申请号：US955440
申请日：1992-10-02
申请人： Takeshi Miyazaki , Tetsuya Takamori , Yutaka Ogasawara , Minoru Yamashita , Takaharu Shibuya
发明人： Takeshi Miyazaki , Tetsuya Takamori , Yutaka Ogasawara , Minoru Yamashita , Takaharu Shibuya
IPC分类号： B21D53/00 , B60G7/00 , F16F1/38 , F16F1/387 , F16M3/00
CPC分类号： F16F1/3849 , B21D53/00 , B60G7/00 , F16F1/387
摘要： vibration insulator is provided which includes a vibration insulator section having an outer cylinder, a rubber member which is vulcanization-bonded to the inner peripheral surface of the outer cylinder and an inner cylinder supported by the rubber member, and a bracket for supporting the vibration insulator section, with the thickness of the bracket material being made as small as possible. The bracket is composed of a pair of sheet-metal bracket members holding the axial ends of the vibration insulator. The bracket members include plate-like base sections axially opposed to each other, cylindrical sections which extend axially outward from the base sections and into which the end portions of the outer cylinder are forced, abutting sections extending radially inward from the end edges of the cylindrical sections and abutting the end surfaces of the outer cylinder and joint sections joining the bracket members to each other. A method of manufacturing the vibration insulator bracket is also provided.
摘要翻译：提供了一种振动绝缘体，其包括具有外筒的橡胶构件，和外筒的内周面硫化的橡胶构件和由橡胶构件支承的内筒的振动绝缘体，以及用于将振动绝缘体支架材料的厚度尽可能小。支架由保持振动绝缘体的轴向端的一对金属板支架构件组成。托架构件包括彼此轴向相对的板状基部，从基部轴向向外延伸并且外筒的端部被迫动的圆柱形部分，邻接部分从圆柱形的端部边缘径向向内延伸并且将外筒的端面和将托架构件彼此接合的接合部邻接。还提供了一种制造振动绝缘支架的方法。

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