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31. 发明授权

US08053291B2 Method for making thin film transistor comprising flocculating of carbon nanotubes 有权
标题翻译：制造薄膜晶体管的方法，其包括碳纳米管的絮凝
公开(公告)号：US08053291B2
公开(公告)日：2011-11-08
申请号：US12384310
申请日：2009-04-02
申请人： Chang-Hong Liu , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Chang-Hong Liu , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L51/0048 , H01L51/0541 , H01L51/0545 , H01L51/0558 , Y10S977/938
摘要： A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on the insulating substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube structure with an insulating layer. The source electrode and the drain electrode are connected to the carbon nanotube structure, the gate electrode is electrically insulated from the carbon nanotube structure by the insulating layer.
摘要翻译：一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供多个碳纳米管和绝缘基板; 絮凝碳纳米管以获得碳纳米管结构，将碳纳米管结构施加在绝缘基板上; 形成源电极，漏电极和栅电极; 并用绝缘层覆盖碳纳米管结构。源电极和漏极连接到碳纳米管结构，栅电极通过绝缘层与碳纳米管结构电绝缘。

32. 发明授权

US07973305B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US07973305B2
公开(公告)日：2011-07-05
申请号：US12384299
申请日：2009-04-02
申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L29/06
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0541 , H01L51/0545 , H01L51/0562
摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer comprises at least two stacked carbon nanotube films, and each carbon nanotube film comprises a plurality of carbon nanotubes primarily oriented along a same direction, and the carbon nanotubes in at least two adjacent carbon nanotube films are aligned along different directions.
摘要翻译：薄膜晶体管包括源电极，漏电极，半导体层和栅电极。漏电极与源电极间隔开。半导体层连接到源电极和漏电极。栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。半导体层包括至少两个层叠的碳纳米管膜，并且每个碳纳米管膜包括主要沿相同方向定向的多个碳纳米管，并且至少两个相邻的碳纳米管膜中的碳纳米管沿着不同的方向排列。

33. 发明授权

US07638112B2 Method of manufacturing zinc aluminate nano-material 有权
公开(公告)号：US07638112B2
公开(公告)日：2009-12-29
申请号：US12291302
申请日：2008-11-06
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C01F7/00 , C23C14/00
CPC分类号： C01G9/00 , B82Y30/00 , C01P2004/64
摘要： A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C.

34. 发明申请

US20090298239A1 Method for making thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20090298239A1
公开(公告)日：2009-12-03
申请号：US12384310
申请日：2009-04-02
申请人： Chang-Hong Liu , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Chang-Hong Liu , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L51/0048 , H01L51/0541 , H01L51/0545 , H01L51/0558 , Y10S977/938
摘要： A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on the insulating substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube structure with an insulating layer. The source electrode and the drain electrode are connected to the carbon nanotube structure, the gate electrode is electrically insulated from the carbon nanotube structure by the insulating layer.
摘要翻译：一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供多个碳纳米管和绝缘基板; 絮凝碳纳米管以获得碳纳米管结构，将碳纳米管结构施加在绝缘基板上; 形成源电极，漏电极和栅电极; 并用绝缘层覆盖碳纳米管结构。源电极和漏极连接到碳纳米管结构，栅电极通过绝缘层与碳纳米管结构电绝缘。

35. 发明申请

US20090286362A1 Method for making thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20090286362A1
公开(公告)日：2009-11-19
申请号：US12384245
申请日：2009-04-02
申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/336
CPC分类号： H01L51/102 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/0545 , Y10S977/742 , Y10S977/75 , Y10S977/842 , Y10S977/932
摘要： A method for making a thin film transistor, the method comprising the steps of: providing a growing substrate; applying a catalyst layer on the growing substrate; heating the growing substrate with the catalyst layer in a furnace with a protective gas therein, supplying a carbon source gas and a carrier gas at a ratio ranging from 100:1 to 100:10, and growing a carbon nanotube layer on the growing substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube layer with an insulating layer, wherein the source electrode and the drain electrode are electrically connected to the single-walled carbon nanotube layer, the gate electrode is opposite to and electrically insulated from the single-walled carbon nanotube layer.
摘要翻译：一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供生长衬底; 在生长衬底上施加催化剂层; 在其中具有保护气体的炉中用催化剂层加热生长衬底，以100:1至100:10的比例供应碳源气体和载气，并在生长衬底上生长碳纳米管层; 形成源电极，漏电极和栅电极; 并且用绝缘层覆盖碳纳米管层，其中源电极和漏电极电连接到单壁碳纳米管层，栅电极与单壁碳纳米管层相对并与其电绝缘。

36. 发明申请

US20090260688A1 PHOTOVOLTAIC DEVICE 有权
标题翻译：光电器件
公开(公告)号：US20090260688A1
公开(公告)日：2009-10-22
申请号：US12339364
申请日：2008-12-19
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L31/00
CPC分类号： H01L31/022466 , H01L31/0745 , H01L31/1884 , Y02E10/50 , Y10S977/742 , Y10S977/932 , Y10S977/948
摘要： A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.
摘要翻译：光电器件包括硅衬底，本征层，碳纳米管结构和第一电极。硅衬底具有前表面和后表面。本征层设置在硅衬底的前表面上。碳纳米管结构设置在本征层上。第一电极设置在硅衬底的后表面上。

37. 发明申请

US20090257947A1 Method of manufacturing zinc aluminate nano-material 有权
标题翻译：制造铝酸锌纳米材料的方法
公开(公告)号：US20090257947A1
公开(公告)日：2009-10-15
申请号：US12291302
申请日：2008-11-06
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C01F7/02 , C23C16/00 , C23C14/00
CPC分类号： C01G9/00 , B82Y30/00 , C01P2004/64
摘要： A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C.
摘要翻译：一种制备铝酸锌纳米材料的方法，该方法包括以下步骤。首先，提供不断增长的衬底和生长装置，并且生长装置包括加热装置和反应室。其次，将生长的基材和一定数量的反应材料放置在反应室中，以及包含锌和铝的反应材料。第三，将含氧气体引入反应室。最后，将反应室加热至660〜1100℃

38. 发明申请

US20090197038A1 CARBON NANOTUBE FILM STRUCTURE AND METHOD FOR MAKING THE SAME 有权
标题翻译：碳纳米管薄膜结构及其制造方法
公开(公告)号：US20090197038A1
公开(公告)日：2009-08-06
申请号：US12243059
申请日：2008-10-01
申请人： Xue-Shen Wang , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
发明人： Xue-Shen Wang , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： B32B5/12 , C23C16/00
CPC分类号： C01B31/0226 , B01J21/185 , B01J23/74 , B01J23/745 , B01J23/881 , B01J23/8906 , B01J37/0219 , B82Y30/00 , B82Y40/00 , C01B31/0233 , C01B32/16 , C01B32/162 , C01B2202/02 , C01B2202/04 , C01B2202/06 , C01B2202/08 , C01B2202/34 , C01B2202/36 , C01P2004/13 , Y10S977/843 , Y10T428/24132 , Y10T428/249924
摘要： A carbon nanotube film structure includes at least one carbon nanotube film or at least two stacked carbon nanotube films. Each carbon nanotube film includes a plurality of ultralong carbon nanotubes parallel to the surface of the carbon nanotube film and parallel to each other. A length of the ultralong carbon nanotube is equal to or greater than 1 centimeter. The invention is also related to a method for making the above-described carbon nanotube film structure.
摘要翻译：碳纳米管膜结构包括至少一个碳纳米管膜或至少两个堆叠的碳纳米管膜。每个碳纳米管膜包括平行于碳纳米管膜的表面并且彼此平行的多个超长碳纳米管。超长碳纳米管的长度等于或大于1厘米。本发明还涉及制造上述碳纳米管薄膜结构的方法。

39. 发明授权

US08790744B2 Method for making nanowire structure 有权
标题翻译：制造纳米线结构的方法
公开(公告)号：US08790744B2
公开(公告)日：2014-07-29
申请号：US12589469
申请日：2009-10-23
申请人： Jia-Ping Wang , Jia-Jia Wen , Qun-Feng Cheng , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Jia-Ping Wang , Jia-Jia Wen , Qun-Feng Cheng , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C23C18/00
CPC分类号： C23C14/5813 , B82Y30/00 , B82Y40/00 , C01F7/42 , C01G23/047 , C01G23/07 , C01G53/04 , C01P2004/16 , C01P2004/64 , C04B35/62259 , C04B35/62876 , C04B35/62884 , C04B35/62897 , C04B2235/526 , C04B2235/5264 , C04B2235/5288 , C23C14/14 , C23C14/20 , Y10S977/762 , Y10S977/811 , Y10S977/888 , Y10S977/89 , Y10S977/896 , Y10S977/901
摘要： The disclosure related to a method for making a nanowire structure. The method includes fabricating a free-standing carbon nanotube structure, introducing reacting materials into the carbon nanotube structure, and activating the reacting materials to grow a nanowire structure.
摘要翻译：本发明涉及一种制备纳米线结构的方法。该方法包括制造独立的碳纳米管结构，将反应材料引入到碳纳米管结构中，并激活反应材料以生长纳米线结构。

40. 发明授权

US08608849B2 Method for making zinc oxide nano-structrure 有权
公开(公告)号：US08608849B2
公开(公告)日：2013-12-17
申请号：US12286217
申请日：2008-09-29
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C30B25/10
CPC分类号： C01G9/03 , B82Y30/00 , C01P2004/03 , C01P2004/13
摘要： A method for making zinc oxide nano-structure, the method includes the following steps. Firstly, providing a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, providing a growing substrate and forming a metal layer thereon. Thirdly, depositing a catalyst layer on the metal layer. Fourthly, placing the growing substrate into the reacting room together with a quantity of zinc source material. Fifthly, introducing a oxygen-containing gas into the reacting room. Lastly, heating the reacting room to a temperature range of 500˜1100° C.

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