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31. 发明申请

US20090289340A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090289340A1
公开(公告)日：2009-11-26
申请号：US12468280
申请日：2009-05-19
申请人： Shunpei Yamazaki , Yoshiaki Oikawa , Hironobu Shoji , Yutaka Shionoiri , Kiyoshi Kato , Masataka Nakada
发明人： Shunpei Yamazaki , Yoshiaki Oikawa , Hironobu Shoji , Yutaka Shionoiri , Kiyoshi Kato , Masataka Nakada
IPC分类号： H01L23/02 , H01L21/56
CPC分类号： G06K19/07749 , G06K19/07735 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/13 , H01Q1/2225 , H01Q1/2283 , H01Q1/526 , H01Q7/00
摘要： A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators between which the semiconductor integrated circuit is sandwiched, a highly reliable semiconductor having resistance can be provided while achieving reduction in the thickness and size. Moreover, also in the manufacturing process, external stress, or defective shapes or deterioration in characteristics resulted from electrostatic discharge are prevented, and thus the semiconductor device can be manufactured with high yield.
摘要翻译：覆盖半导体集成电路的导电屏蔽防止由于静电放电而导致的半导体集成电路的静电破坏（例如，电路的故障和对半导体元件的损坏）。此外，通过使用夹在半导体集成电路之间的一对绝缘体，可以提供具有电阻的高可靠性的半导体，同时实现厚度和尺寸的减小。此外，在制造过程中也防止外部应力或形状不良或由静电放电导致的特性劣化，从而可以高产率制造半导体器件。

32. 发明授权

US07564058B2 Display device, manufacturing method thereof, and television set 有权
标题翻译：显示装置及其制造方法以及电视机
公开(公告)号：US07564058B2
公开(公告)日：2009-07-21
申请号：US11187988
申请日：2005-07-25
申请人： Shunpei Yamazaki , Hironobu Shoji , Shinji Maekawa , Osamu Nakamura , Tatsuya Honda , Gen Fujii , Yukie Suzuki , Ikuko Kawamata
发明人： Shunpei Yamazaki , Hironobu Shoji , Shinji Maekawa , Osamu Nakamura , Tatsuya Honda , Gen Fujii , Yukie Suzuki , Ikuko Kawamata
IPC分类号： H01L27/14
CPC分类号： H01L21/02667 , G02F1/1368 , G02F2202/104 , H01L21/2022 , H01L21/2026 , H01L27/124 , H01L27/1277 , H01L27/1292 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L51/56
摘要： A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.
摘要翻译：提供了具有能够以极小的阈值电压变化进行高速运行的TFT的显示装置的制造方法，其中以高效率使用材料并且需要少量的光掩模。本发明的显示装置包括形成在绝缘表面上的栅极电极层和像素电极层，形成在栅极电极层上的栅极绝缘层，形成在栅极绝缘层上的结晶半导体层，具有一个导电性的半导体层形成为与结晶半导体层接触的类型，源电极层和漏极电极层，形成为与具有一种导电类型的半导体层接触，在源极电极层，漏极电极层和像素电极之后形成绝缘体在所述绝缘层中形成的第一开口到达所述源极电极层或所述漏极电极层，形成在所述栅极绝缘层和所述绝缘层中的第二开口到达所述像素电极层;以及布线层，开口和第二开口以电连接源极电极层或漏极电极呃到像素电极层。

33. 发明申请

US20070262318A1 Method for manufacturing display device 有权
公开(公告)号：US20070262318A1
公开(公告)日：2007-11-15
申请号：US11826815
申请日：2007-07-18
申请人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
发明人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L51/56 , H01L27/1277 , H01L27/1292 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L29/42384 , H01L29/458 , H01L29/66757 , H01L29/78675 , H01L29/78696 , H01L51/0005 , H01L51/524 , H01L51/5253 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323 , Y02P80/30
摘要： The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.

34. 发明授权

US07247529B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07247529B2
公开(公告)日：2007-07-24
申请号：US11205220
申请日：2005-08-17
申请人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
发明人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L51/56 , H01L27/1277 , H01L27/1292 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L29/42384 , H01L29/458 , H01L29/66757 , H01L29/78675 , H01L29/78696 , H01L51/0005 , H01L51/524 , H01L51/5253 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323 , Y02P80/30
摘要： The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.
摘要翻译：本发明提供了一种用于制造具有TFT的显示装置的方法，所述显示装置可以在使用少量光掩模的情况下高速运转并且提高难以改变阈值的材料的利用效率。在本发明中，将催化元件施加到非晶半导体膜上，并加热非晶半导体膜以形成结晶半导体膜。在从晶体半导体膜去除催化元素之后，制造具有平面结构的顶栅型薄膜晶体管。此外，通过使用选择性地形成显示装置的元件的液滴喷射方法，可以简化该过程，并且可以减少材料的损失。

35. 发明授权

US07160762B2 Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus 有权
标题翻译：半导体器件，半导体器件和激光照射设备的制造方法
公开(公告)号：US07160762B2
公开(公告)日：2007-01-09
申请号：US10701174
申请日：2003-11-05
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , C30B1/023 , C30B1/08 , C30B29/06 , H01L21/02683 , H01L21/2026
摘要： It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method.A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.
摘要翻译：本发明的目的是提供一种激光照射装置，其能够在抑制半导体膜中的结晶性的变化和其表面状态的不均匀性的同时使半导体膜均匀结晶。本发明的另一个目的是提供一种使用能够抑制TFT的导通电流，迁移率和阈值的变化的激光照射装置的半导体器件的制造方法，并且进一步提供利用制造制造的半导体器件方法。一种制造半导体器件的方法，包括以下步骤：用离子掺杂方法将第一稀有气体添加到形成在绝缘表面上的半导体膜上，并且在其中加入第一稀有气体的激光照射半导体膜，第二惰性气体，其中当照射激光时，在加入了第一稀有气体的情况下将磁场施加到半导体膜。

36. 发明授权

US08916230B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US08916230B2
公开(公告)日：2014-12-23
申请号：US13284584
申请日：2011-10-28
申请人： Shunpei Yamazaki , Hironobu Shoji , Ikuko Kawamata
发明人： Shunpei Yamazaki , Hironobu Shoji , Ikuko Kawamata
IPC分类号： H01L21/00 , H01L27/12
CPC分类号： H01L27/1214 , H01L21/31105 , H01L27/124 , H01L27/1285 , H01L27/1288 , H01L27/1292 , Y02P80/30
摘要： When a mask layer is formed, a first liquid composition containing a mask-layer-forming material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern) to form a first mask layer having a frame shape. A second liquid composition containing a mask-layer-forming material is applied so as to fill a space inside the first mask layer having a frame shape to form a second mask layer. The first mask layer and the second mask layer are formed to be in contact with each other, and the first mask layer is formed to surround the second mask layer. Therefore, the first mask layer and the second mask layer can be used as one continuous mask layer.
摘要翻译：当形成掩模层时，将含有掩模层形成材料的第一液体组合物施加在期望形成的图案的外侧（对应于图案的轮廓或边缘部分），以形成第一掩模层具有框架形状。涂布含有掩模层形成材料的第二液体组合物，以填充具有框架形状的第一掩模层内的空间，以形成第二掩模层。第一掩模层和第二掩模层形成为彼此接触，并且第一掩模层形成为围绕第二掩模层。因此，第一掩模层和第二掩模层可以用作一个连续掩模层。

37. 发明申请

US20110275191A1 Method of Manufacturing Semiconductor Device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20110275191A1
公开(公告)日：2011-11-10
申请号：US13186803
申请日：2011-07-20
申请人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
IPC分类号： H01L21/02
CPC分类号： H01L27/1266 , H01L27/1288 , H01L29/66765
摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
摘要翻译：提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

38. 发明授权

US07842589B2 Laser irradiation apparatus with means for applying magnetic field 有权
标题翻译：具有施加磁场的装置的激光照射装置
公开(公告)号：US07842589B2
公开(公告)日：2010-11-30
申请号：US12627242
申请日：2009-11-30
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
IPC分类号： H01L21/428 , B23K26/12
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.
摘要翻译：根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光，有效地防止了氧和氮混入半导体膜。因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

39. 发明申请

US20100289026A1 Method for Manufacturing Display Device 有权
标题翻译：显示设备制造方法
公开(公告)号：US20100289026A1
公开(公告)日：2010-11-18
申请号：US12844072
申请日：2010-07-27
申请人： Shunpei Yamazaki , Hironobu Shoji , Ikuko Kawamata
发明人： Shunpei Yamazaki , Hironobu Shoji , Ikuko Kawamata
IPC分类号： H01L33/00
CPC分类号： H01L21/76801 , H01L21/288 , H01L21/76838 , H01L27/124 , H01L27/1285 , H01L27/1292 , H01L2924/0002 , H01L2924/00
摘要： When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.
摘要翻译：当形成导电层时，将含有导电材料的第一液体组合物施加在期望形成的图案的外侧（对应于图案的轮廓或边缘部分）和第一导电层（绝缘层）形成。涂布含有导电材料的第二液体组合物，以填充具有框架形状的第一导电层内的空间，由此形成第二导电层。第一导电层和第二导电层形成为彼此接触，并且第一导电层形成为围绕第二导电层。因此，第一导电层和第二导电层可以用作一个连续导电层。

40. 发明授权

US07749907B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07749907B2
公开(公告)日：2010-07-06
申请号：US11841361
申请日：2007-08-20
申请人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
IPC分类号： H01L21/461
CPC分类号： H01L27/1288 , H01L21/0337 , H01L21/3086 , H01L21/32139 , H01L27/1214 , H01L29/66765 , H01L29/78633
摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.
摘要翻译：第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。通过具有透光性的层，用激光束选择性地照射光吸收层。当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和除去与光吸收层接触的透光性的层。通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

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