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31. 发明授权

US07109080B2 Method of forming capacitor over bitline contact 有权
标题翻译：通过位线接触形成电容器的方法
公开(公告)号：US07109080B2
公开(公告)日：2006-09-19
申请号：US11033447
申请日：2005-01-12
申请人： Yong-Woo Lee , Jong-Chul Park , O-Ik Kwon , Sang-Sup Jeong
发明人： Yong-Woo Lee , Jong-Chul Park , O-Ik Kwon , Sang-Sup Jeong
IPC分类号： H01L21/8242
CPC分类号： H01L27/10855 , H01L27/10885 , H01L27/10888
摘要： A method of forming a contact for a semiconductor device by forming a storage node contact in a semiconductor substrate having a first pad and a second pad formed thereon. The storage node contact is connected to the second pad. A bit line electrically insulated from the storage node contact by a spacer and electrically connected to the first pad.
摘要翻译：一种通过在其上形成有第一焊盘和第二焊盘的半导体衬底中形成存储节点接触来形成半导体器件的接触的方法。存储节点触点连接到第二焊盘。与存储节点接触的位线通过间隔物电绝缘并电连接到第一焊盘。

32. 发明申请

US20050150559A1 Apparatus and method for controlling exhaust pressure in semiconductor manufacturing 失效
标题翻译：用于控制半导体制造中排气压力的装置和方法
公开(公告)号：US20050150559A1
公开(公告)日：2005-07-14
申请号：US11032103
申请日：2005-01-11
申请人： Hyuk Kwon , Jong-Chul Park
发明人： Hyuk Kwon , Jong-Chul Park
IPC分类号： H01L21/02 , F16K3/32 , F16K3/34
CPC分类号： F16K3/34 , F16K1/222 , F16K1/223 , F16K3/0209 , F16K3/32 , F16K51/02 , Y10T137/7761 , Y10T137/8696 , Y10T137/87378
摘要： An apparatus and method for controlling exhaust produced by a reactive chamber is provided. The apparatus for controlling exhaust may include, for example, a valve body having an exhaust hole for the exhaust to pass through, and may include a first and second valve which regulate the opening and/or the closing of the exhaust hole. A control device may control the operation of the first and second valves based on the internal pressure of the reactive chamber.
摘要翻译：提供了一种用于控制由反应室产生的排气的装置和方法。用于控制排气的装置可以包括例如具有用于排气通过的排气孔的阀体，并且可以包括调节排气孔的打开和/或关闭的第一和第二阀。控制装置可以基于反应室的内部压力来控制第一和第二阀的操作。

33. 发明授权

US09306156B2 Methods of manufacturing a magnetoresistive random access memory device 有权
标题翻译：制造磁阻随机存取存储器件的方法
公开(公告)号：US09306156B2
公开(公告)日：2016-04-05
申请号：US14533084
申请日：2014-11-04
申请人： Eun-Sun Noh , Jong-Chul Park , Shin Kwon , Hyung-Joon Kwon , Chae-Lyoung Kim , Hye-Ji Yoon
发明人： Eun-Sun Noh , Jong-Chul Park , Shin Kwon , Hyung-Joon Kwon , Chae-Lyoung Kim , Hye-Ji Yoon
IPC分类号： H01L43/12 , H01L27/22 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12 , H01L27/222 , H01L27/228 , H01L43/08
摘要： In a method of manufacturing an MRAM device, a first sacrificial layer, an etch stop layer, and a second sacrificial layer are sequentially formed on a substrate and then partially etched to form openings therethrough. Lower electrodes are formed to fill the openings. The first and second sacrificial layers and portions of the etch stop layer are removed to form etch stop layer patterns surrounding upper portions of sidewalls of the lower electrodes, respectively. An upper insulating layer pattern is formed between the etch stop layer patterns to partially define an air pad between the lower electrodes. A first magnetic layer, a tunnel barrier layer, a second magnetic layer, and an upper electrode layer are formed, and are etched to form a plurality of magnetic tunnel junction (MTJ) structures. Each MTJ structure includes a sequentially stacked first magnetic layer pattern, tunnel layer pattern, and second magnetic layer pattern, and each of the MTJ structures contacts a corresponding one of the lower electrodes.
摘要翻译：在制造MRAM器件的方法中，第一牺牲层，蚀刻停止层和第二牺牲层依次形成在衬底上，然后被部分蚀刻以形成通过其的开口。形成下电极以填充开口。去除第一和第二牺牲层和蚀刻停止层的部分以分别形成围绕下部电极的侧壁的上部的蚀刻停止层图案。在蚀刻停止层图案之间形成上部绝缘层图案，以在下部电极之间部分地限定气垫。形成第一磁性层，隧道势垒层，第二磁性层和上电极层，并被蚀刻以形成多个磁性隧道结（MTJ）结构。每个MTJ结构包括顺序堆叠的第一磁性层图案，隧道层图案和第二磁性层图案，并且每个MTJ结构接触相应的一个下部电极。

34. 发明申请

US20140136745A1 METHOD AND APPARATUS FOR ALLOCATING INTERRUPTS IN A MULTI-CORE SYSTEM 审中-公开
标题翻译：用于在多核系统中分配中断的方法和装置
公开(公告)号：US20140136745A1
公开(公告)日：2014-05-15
申请号：US14234265
申请日：2012-08-10
申请人： Sang Bok Han , Hong Chul Kim , In Choon Yeo , Jong-Chul Park
发明人： Sang Bok Han , Hong Chul Kim , In Choon Yeo , Jong-Chul Park
IPC分类号： G06F13/24
CPC分类号： G06F13/24 , Y02D10/14
摘要： An apparatus and a method for allocating interrupts in a multi-core system are provided. According to an embodiment, an interrupt control register unit records the interrupt processing capacity of each core of a multi-core system by receiving an interrupt, and checking the interrupt control register unit when receiving the interrupt and allocating the interrupt to a core which has been checked to be in an interrupt processing enabled state in the checking step. When the core is allocating the interrupt, the core transmits, to the interrupt control register unit, a signal representing the interrupt control register corresponding to the core which is changed to an interrupt processing disabled state, and can process the interrupt.
摘要翻译：提供了一种用于在多核系统中分配中断的装置和方法。根据实施例，中断控制寄存器单元通过接收中断来记录多核系统的每个核的中断处理能力，并且在接收到中断时检查中断控制寄存器单元，并将中断分配给已经被检查在检查步骤中处于启用中断状态。当核心分配中断时，核心向中断控制寄存器单元发送一个表示与核心相对应的中断控制寄存器的信号，该中断控制寄存器改变为中断处理禁止状态，并且可以处理中断。

35. 发明授权

US08111559B2 Non-volatile random access memory with a control circuit for preventing an initial resistance failure, a solid state drive, and a computer system including the same 有权
标题翻译：具有用于防止初始电阻故障的控制电路的非易失性随机存取存储器，固态驱动器和包括其的计算机系统
公开(公告)号：US08111559B2
公开(公告)日：2012-02-07
申请号：US12662221
申请日：2010-04-06
申请人： Min Cheol Kwon , Dong Jun Shin , Sun-Mi Yoo , Jong-Chul Park
发明人： Min Cheol Kwon , Dong Jun Shin , Sun-Mi Yoo , Jong-Chul Park
IPC分类号： G11C7/10
CPC分类号： G11C7/04 , G06F3/0679 , G11C7/22 , G11C13/004 , G11C13/0069
摘要： The non-volatile random access memory (RAM) includes a non-volatile RAM array, a buffer configured to buffer data to be programmed in the non-volatile RAM array and configured to buffer data read from the non-volatile RAM array, and a control block configured to read data from at least one of the non-volatile RAM array and the buffer based on whether the data to be read has been stored in the buffer, a temperature when the data was programmed, and a time lapse since the programming of the data.
摘要翻译：非易失性随机存取存储器（RAM）包括非易失性RAM阵列，被配置为缓冲要在非易失性RAM阵列中编程的数据并被配置为缓冲从非易失性RAM阵列读取的数据的缓冲器，以及控制块，其被配置为基于是否将要读取的数据存储在缓冲器中，从数据被编程的温度以及从编程开始的时间流逝从非易失性RAM阵列和缓冲器中的至少一个读取数据的数据。

36. 发明授权

US07980838B2 Electric spinning apparatus for mass-production of nano-fiber 有权
标题翻译：用于大规模生产纳米纤维的电纺丝设备
公开(公告)号：US07980838B2
公开(公告)日：2011-07-19
申请号：US12078003
申请日：2008-03-26
申请人： Jong-Chul Park
发明人： Jong-Chul Park
IPC分类号： D01D5/00 , D04H3/03
CPC分类号： D01D5/0069 , B82Y30/00
摘要： The present invention relates to an electrospinning apparatus for mass-production of nanofibers, particularly to an electrospinning apparatus with an electric stability and an improved nozzle blocks. The bottom-up electrospinning apparatus for the mass-production of nanofiber comprises at least one nozzle block having a plurality of spinning nozzles arranged in the horizontal and vertical direction; a collector installed over the nozzle blocks in order to correspond to the nozzle blocks and maintain a certain distance in between; a power source to apply voltage difference between the nozzle block and the collector; and a spinning solution container to supply the spinning solution to the nozzle block, wherein the nozzle block and the collector are connected to the positive terminal and the negative terminal, respectively and among a plurality of spinning nozzles arranged along the horizontal line, a spinning nozzle in the middle and a spinning nozzle in the end have different height.
摘要翻译：本发明涉及一种用于批量生产纳米纤维的静电纺丝装置，特别涉及具有电稳定性和改进的喷嘴块的静电纺丝装置。用于批量生产纳米纤维的自下而上的静电纺丝装置包括至少一个具有在水平和垂直方向上布置的多个纺丝喷嘴的喷嘴块; 安装在喷嘴块上的收集器，以便对应于喷嘴块并在其间保持一定的距离; 用于施加喷嘴块和收集器之间的电压差的电源; 以及将纺丝溶液供给到喷嘴块的纺丝溶液容器，其中喷嘴块和集电器分别连接到正极端子和负极端子，并且沿着水平线布置的多个纺丝喷嘴中，纺丝喷嘴在中间和纺纱喷嘴的末端有不同的高度。

37. 发明申请

US20100216289A1 Method of fabricating semiconductor device having metal-semiconductor compound regions 有权
标题翻译：制造具有金属 - 半导体化合物区域的半导体器件的方法
公开(公告)号：US20100216289A1
公开(公告)日：2010-08-26
申请号：US12656885
申请日：2010-02-18
申请人： Jong-Chul Park , Yun-Seung Kang
发明人： Jong-Chul Park , Yun-Seung Kang
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L29/456 , H01L29/66666
摘要： Example embodiments relate to methods of fabricating a semiconductor device having a metal-semiconductor compound region. A method according to example embodiments may include forming semiconductor pillars on a semiconductor substrate. The semiconductor substrate between the semiconductor pillars may be etched to form a trench region. A dielectric isolation pattern partially filling the trench region may be formed, and dielectric sidewall spacers may be formed on sidewalls of the semiconductor pillars. Metal-semiconductor compound regions may be formed on sidewalls of a portion of the trench region that is not filled by the isolation pattern.
摘要翻译：示例性实施例涉及制造具有金属 - 半导体化合物区域的半导体器件的方法。根据示例性实施例的方法可以包括在半导体衬底上形成半导体柱。半导体柱之间的半导体衬底可以被蚀刻以形成沟槽区域。可以形成部分地填充沟槽区域的介电隔离图案，并且可以在半导体柱的侧壁上形成电介质侧壁间隔物。金属 - 半导体化合物区域可以形成在未被隔离图案填充的沟槽区域的一部分的侧壁上。

38. 发明申请

US20100169806A1 Apparatus and method for creating widget in portable terminal 有权
标题翻译：便携式终端中创建小部件的装置和方法
公开(公告)号：US20100169806A1
公开(公告)日：2010-07-01
申请号：US12655381
申请日：2009-12-30
申请人： Jeong-Hoe Ku , Jong-Chul Park , Ji-Won Ha
发明人： Jeong-Hoe Ku , Jong-Chul Park , Ji-Won Ha
IPC分类号： G06F3/048 , G06F9/54
CPC分类号： G06F8/38
摘要： Provided are an apparatus and a method for creating a widget of a portable terminal. The method includes: determining a building block that a user selects on a widget creating screen including building blocks necessary for widget creation; generating a tag of data corresponding to the confirmed building block; and generating a widget code including the building block and the tag.
摘要翻译：提供了一种用于创建便携式终端的小部件的装置和方法。该方法包括：确定用户在小窗口创建屏幕上选择的构建块，其包括小部件创建所必需的构建块; 产生与所确认的构建块对应的数据标签; 以及生成包括所述构建块和所述标签的小部件代码。

39. 发明申请

US20080241297A1 Electric spinning apparatus for mass-production of nano-fiber 有权
标题翻译：用于大规模生产纳米纤维的电纺丝设备
公开(公告)号：US20080241297A1
公开(公告)日：2008-10-02
申请号：US12078003
申请日：2008-03-26
申请人： Jong-Chul Park
发明人： Jong-Chul Park
IPC分类号： B29C47/12
CPC分类号： D01D5/0069 , B82Y30/00
摘要： The present invention relates to an electrospinning apparatus for mass-production of nanofibers, particularly to an electrospinning apparatus with an electric stability and an improved nozzle blocks. The bottom-up electrospinning apparatus for the mass-production of nanofiber comprises at least one nozzle block having a plurality of spinning nozzles arranged in the horizontal and vertical direction; a collector installed over the nozzle blocks in order to correspond to the nozzle blocks and maintain a certain distance in between; a power source to apply voltage difference between the nozzle block and the collector; and a spinning solution container to supply the spinning solution to the nozzle block, wherein the nozzle block and the collector are connected to the positive terminal and the negative terminal, respectively and among a plurality of spinning nozzles arranged along the horizontal line, a spinning nozzle in the middle and a spinning nozzle in the end have different height.
摘要翻译：本发明涉及一种用于批量生产纳米纤维的静电纺丝装置，特别涉及具有电稳定性和改进的喷嘴块的静电纺丝装置。用于批量生产纳米纤维的自下而上的静电纺丝装置包括至少一个具有在水平和垂直方向上布置的多个纺丝喷嘴的喷嘴块; 安装在喷嘴块上的收集器，以便对应于喷嘴块并在其间保持一定的距离; 用于施加喷嘴块和收集器之间的电压差的电源; 以及将纺丝溶液供给到喷嘴块的纺丝溶液容器，其中喷嘴块和集电器分别连接到正极端子和负极端子，并且沿着水平线布置的多个纺丝喷嘴中，纺丝喷嘴在中间和纺纱喷嘴的末端有不同的高度。

40. 发明申请

US20070184694A1 Wiring structure, semiconductor device and methods of forming the same 审中-公开
标题翻译：接线结构，半导体器件及其形成方法
公开(公告)号：US20070184694A1
公开(公告)日：2007-08-09
申请号：US11592242
申请日：2006-11-03
申请人： Jong-Kyu Kim , Jong-Chul Park , Jang-Bin Yim , Sang-Dong Kwon , Ki-Jeong Kim , Sung-Gil Choi
发明人： Jong-Kyu Kim , Jong-Chul Park , Jang-Bin Yim , Sang-Dong Kwon , Ki-Jeong Kim , Sung-Gil Choi
IPC分类号： H01R3/08
CPC分类号： H01L21/76816 , H01L21/76814 , H01L21/76831 , H01L21/76847 , H01L23/485 , H01L27/10888 , H01L2924/0002 , H01L2924/00
摘要： Example embodiments relate to a wiring structure, a semiconductor device and methods of forming the wiring structure. The wiring structure may include a first contact plug, a second contact plug, a protecting layer pattern and an insulating structure. The first contact plug may be provided on a semiconductor substrate. The second contact plug may be provided on the first contact plug to be electrically connected to the first contact plug. The protecting layer pattern may encompass an upper sidewall of the first contact plug and a sidewall of the second contact plug to retard chemicals from infiltrating into an interface between the first and second contact plugs. The insulating structure may encompass the first contact plug, the second contact plug and the protecting layer pattern.
摘要翻译：示例性实施例涉及布线结构，半导体器件和形成布线结构的方法。布线结构可以包括第一接触插塞，第二接触插塞，保护层图案和绝缘结构。第一接触插塞可以设置在半导体衬底上。第二接触插头可以设置在第一接触插塞上以电连接到第一接触插塞。保护层图案可以包括第一接触插塞的上侧壁和第二接触插塞的侧壁，以阻止化学品渗入第一和第二接触插塞之间的界面。绝缘结构可以包括第一接触插塞，第二接触插塞和保护层图案。

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