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    • 34. 发明申请
    • AUTO-REBOUND SWITCHING APPARATUS AND THE SWITCHING METHOD THEREOF
    • 自动关闭开关装置及其切换方法
    • US20140027234A1
    • 2014-01-30
    • US14008788
    • 2012-03-30
    • Huasong ZhouWei ZhangJianmin ChenBin Cao
    • Huasong ZhouWei ZhangJianmin ChenBin Cao
    • B05B1/16
    • C07D239/47B05B1/1636B05B1/18C07D239/48C07D405/12C07D487/04
    • An auto-rebound switching apparatus has: a body provided with a water-separating apparatus, an upper cover rotatably arranged on the rear side of the body, a passive disc rotatably arranged between the rear side of the body and the upper cover, a clutch mechanism comprising a bi-directional ratchet gear and a bi-directional pawl matching the ratchet gear, the ratchet gear being rotatably arranged on the rear side of the body and transmissively connected to the water-separating apparatus, thus allowing the ratchet gear, when rotating, to drive the water-separating apparatus into motion to allow switching, the bi-directional pawl, the upper cover, and the passive disc being interconnected, allowing the upper cover to rotate relative to the passive disc thus driving the bi-directional pawl to move between a forward rotation position, a reverse rotation position, and a detached position, and a rebound apparatus.
    • 一种自动回弹切换装置具有:主体,其具有水分离装置,可旋转地布置在主体后侧的上盖,可旋转地布置在主体的后侧和上盖之间的无源盘,离合器 机构包括双向棘轮齿轮和与棘轮相配合的双向棘爪,该棘轮齿轮可旋转地布置在主体的后侧上,并透射连接到水分离装置,从而允许棘轮在旋转时 ,以驱动水分离装置运动以允许切换,双向棘爪,上盖和无源盘互连,允许上盖相对于无源盘旋转,从而将双向棘爪驱动到 在正向旋转位置,反向旋转位置和分离位置之间移动,以及回弹装置。
    • 38. 发明授权
    • Systems and methods for lattice reduction
    • 晶格退化的系统和方法
    • US08559544B2
    • 2013-10-15
    • US12943824
    • 2010-11-10
    • David Verl AndersonBrian Joseph GestnerWei ZhangXiaoli Ma
    • David Verl AndersonBrian Joseph GestnerWei ZhangXiaoli Ma
    • H04B7/02G06F15/80
    • H04B7/0854
    • Disclosed herein are lattice reduction systems and methods for a MIMO communication system. One such method includes providing a channel matrix corresponding to a channel in a MIMO communication system, preprocessing the channel matrix to form at least an upper triangular matrix, implementing a relaxed size reduction process, and implementing a basis update process. Implementing the relaxed size reduction process comprises choosing a first relaxed size reduction parameter for a first-off-diagonal element of the upper triangular matrix, choosing a second relaxed size reduction parameter, which is greater than the first relaxed size reduction parameter, for a second-off-diagonal element of the upper triangular matrix evaluating whether a first relaxed size reduction condition is satisfied for the first-off-diagonal element of the upper triangular matrix, and evaluating whether a second relaxed size reduction condition is satisfied for the second-off-diagonal element of the upper triangular matrix.
    • 这里公开了用于MIMO通信系统的晶格简化系统和方法。 一种这样的方法包括提供与MIMO通信系统中的信道相对应的信道矩阵,预处理信道矩阵以形成至少上三角矩阵,实现松弛尺寸减小过程,以及实现基本更新过程。 实现松弛尺寸减小过程包括为上三角矩阵选择第一松弛尺寸缩小参数,为第二松弛尺寸选择大于第一松弛尺寸减小参数的第二松弛尺寸减小参数 评估上三角矩阵的第一对角线元素是否满足第一松弛尺寸缩小条件,以及评估第二松弛尺寸缩小条件是否满足二次关系的上三角矩阵的非对角线元素 上三角矩阵的方形元素。
    • 39. 发明申请
    • THIN FILM TRANSISTOR MEMORY AND ITS FABRICATING METHOD
    • 薄膜晶体管存储器及其制造方法
    • US20130264632A1
    • 2013-10-10
    • US13812070
    • 2012-04-24
    • Shijin DingSun ChenXingmei CuiPengfei WangWei Zhang
    • Shijin DingSun ChenXingmei CuiPengfei WangWei Zhang
    • H01L29/792H01L29/66
    • H01L29/792H01L29/66742H01L29/66825H01L29/66833H01L29/7881
    • The invention relates to a thin film transistor memory and its fabricating method, This memory using the substrate as the gate electrode from bottom to up includes a charge blocking layer, a charge storage layer, a charge tunneling layer, an active region of the device and source/drain electrodes. The charge blocking layer is the ALD grown Al2O3 film. The charge storage layer is the two layer metal nanocrystals which include the first layer metal nanocrystals, the insulting layer and the second layer metal nanocrystals grown by ALD method. in sequence from bottom to up. The charge tunneling layer is the symmetrical stack layer which includes the SiO2/HfO2/SiO2 or Al2O3/HfO2/Al2O3 film grown. by ALD method in sequence from bottom to up. The active region of the device is the IGZO film grown by the RF sputtering method, and it is formed by the standard lithography and wet etch method. The TFT memory in this invention has the advantage with large P/E window, good data retention, high P/E speed, stable threshold voltage and simple fabricating process.
    • 本发明涉及薄膜晶体管存储器及其制造方法,从底部到顶部使用基板作为栅电极的存储器包括电荷阻挡层,电荷存储层,电荷隧道层,器件的有源区和 源/漏电极。 电荷阻挡层是ALD生长的Al 2 O 3膜。 电荷存储层是由ALD法生长的第一层金属纳米晶体,绝缘层和第二层金属纳米晶体的两层金属纳米晶体。 从下到上。 电荷隧道层是包括生长的SiO 2 / HfO 2 / SiO 2或Al 2 O 3 / HfO 2 / Al 2 O 3膜的对称堆叠层。 通过ALD方法从下到上依次。 器件的有源区是通过RF溅射法生长的IGZO膜,并且通过标准光刻和湿蚀刻法形成。 本发明的TFT存储器具有P / E窗口大,数据保持性好,P / E速度高,阈值电压稳定,制造工艺简单的优点。