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31. 发明申请

US20080246120A1 REDUCTION OF SILICIDE FORMATION TEMPERATURE ON SiGe CONTAINING SUBSTRATES 有权
标题翻译：在含SiGe衬底上减少硅化物形成温度
公开(公告)号：US20080246120A1
公开(公告)日：2008-10-09
申请号：US12120854
申请日：2008-05-15
申请人： Cyril Cabral , Roy A. Carruthers , Jia Chen , Christophe Detavernier , James M. Harper , Christian Lavoie
发明人： Cyril Cabral , Roy A. Carruthers , Jia Chen , Christophe Detavernier , James M. Harper , Christian Lavoie
IPC分类号： H01L29/161
CPC分类号： H01L21/28518
摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.
摘要翻译：提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。

32. 发明申请

US20080240362A1 X-RAY RADIOGRAPHY APPARATUS AND X-RAY GENERATOR MOVING DEVICE 有权
标题翻译： X射线摄影装置和X射线发生器移动装置
公开(公告)号：US20080240362A1
公开(公告)日：2008-10-02
申请号：US12059564
申请日：2008-03-31
申请人： Aimin Yu , Xiumin Liu , Jia Chen
发明人： Aimin Yu , Xiumin Liu , Jia Chen
IPC分类号： H05G1/02
CPC分类号： A61B6/4476 , A61B6/04
摘要： The present invention provides an X-ray radiography apparatus constructed so as to be capable of moving an X-ray generator to as low a position as possible. A X-ray radiography apparatus is of the X-ray radiography apparatus that includes a table which has a transverse direction and a longitudinal direction, and which includes a first X-ray detector and is capable of placing a subject thereon, an X-ray generator that applies X rays to the subject placed on the table, and an X-ray generator moving device that moves the X-ray generator in the longitudinal direction of the table and upward and downward directions thereof. The X-ray generator moving device includes a guide rail disposed in the longitudinal direction in the neighborhood of the table, a guide support post that guides the X-ray generator movably up and down, and a moving member which is formed in an L shape extending in a transverse direction and extending in a longitudinal direction and which is coupled to the guide rail and the guide support post and moved along the guide rail.
摘要翻译：本发明提供一种X射线摄影装置，其构造为能够将X射线发生器移动到尽可能低的位置。 X射线摄影装置是包括具有横向和纵向方向的表格的X射线照相设备，并且包括第一X射线检测器并且能够将被摄体放置在其上，X射线 X射线发生器，其对放置在台面上的被摄体施加X射线;以及X射线发生器移动装置，其沿着工作台的纵向方向和上下方向移动X射线发生器。 X射线发生器移动装置包括沿着桌子附近的纵向设置的导轨，可上下移动地引导X射线发生器的引导支撑柱和形成为L形的移动构件沿横向方向延伸并且在纵向方向上延伸并且连接到导轨和导向支撑柱并且沿着导轨移动。

33. 发明授权

US07378336B2 Split poly-SiGe/poly-Si alloy gate stack 有权
标题翻译：分离多晶硅/多晶硅合金栅叠层
公开(公告)号：US07378336B2
公开(公告)日：2008-05-27
申请号：US11124978
申请日：2005-05-09
申请人： Kevin K. Chan , Jia Chen , Shih-Fen Huang , Edward J. Nowak
发明人： Kevin K. Chan , Jia Chen , Shih-Fen Huang , Edward J. Nowak
IPC分类号： H01L21/3205
CPC分类号： H01L21/2807 , H01L21/28052 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L29/4916 , H01L29/4925 , H01L29/665
摘要： A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiO2 or SixGeyOz interfacial layer of 3 to 4 A thick. The thin SiO2 or SixGeyOz interfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.
摘要翻译：在栅极电介质上的硅纳米晶种子层上形成场效应晶体管器件的多层栅电极堆叠结构。硅纳米晶体层的小晶粒尺寸允许使用原位快速热化学气相沉积（RTCVD）沉积高达至少70％的[Ge]的均匀且连续的多晶硅层。在快速降低的温度下在氧气环境中原位吹扫沉积室导致薄的SiO 2或Si x O x O O 3至4厚的界面层。薄的SiO 2或Si x Si 2 O 3界面层足够薄且不连续以提供很小的电阻到栅极电流仍具有足够的[O]以在热处理期间有效地阻挡Ge扩散，从而允许后续沉积的钴的硅化物。栅电极堆叠结构用于nFET和pFET两者。

34. 发明授权

US06927454B2 Split poly-SiGe/poly-Si alloy gate stack 有权
标题翻译：分离多晶硅/多晶硅合金栅叠层
公开(公告)号：US06927454B2
公开(公告)日：2005-08-09
申请号：US10680820
申请日：2003-10-07
申请人： Kevin K. Chan , Jia Chen , Shih-Fen Huang , Edward J. Nowak
发明人： Kevin K. Chan , Jia Chen , Shih-Fen Huang , Edward J. Nowak
IPC分类号： H01L20060101 , H01L21/335 , H01L21/336 , H01L21/8238 , H01L29/24 , H01L29/49 , H01L29/76 , H01L31/072 , H01L31/119
CPC分类号： H01L21/2807 , H01L21/28052 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L29/4916 , H01L29/4925 , H01L29/665
摘要： A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiO2 or SixGeyOz interfacial layer of 3 to 4A thick. The thin SiO2 or SixGeyOz interfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.
摘要翻译：在栅极电介质上的硅纳米晶种子层上形成场效应晶体管器件的多层栅电极堆叠结构。硅纳米晶体层的小晶粒尺寸允许使用原位快速热化学气相沉积（RTCVD）沉积高达至少70％的[Ge]的均匀且连续的多晶硅层。在快速降低的温度下在氧气环境中原位吹扫沉积室导致薄的SiO 2或Si x O x O O 3至4A厚的界面层。薄的SiO 2或Si x Si 2 O 3界面层足够薄且不连续以提供很小的电阻到栅极电流仍具有足够的[O]以在热处理期间有效地阻挡Ge扩散，从而允许后续沉积的钴的硅化物。栅电极堆叠结构用于nFET和pFET两者。

35. 发明授权

US06756605B1 Molecular scale electronic devices 失效
标题翻译：分子秤电子设备
公开(公告)号：US06756605B1
公开(公告)日：2004-06-29
申请号：US09551716
申请日：2000-04-18
申请人： Mark A. Reed , James M. Tour , Jia Chen , Adam M. Rawlett , David W. Price
发明人： Mark A. Reed , James M. Tour , Jia Chen , Adam M. Rawlett , David W. Price
IPC分类号： H01L3524
CPC分类号： G11C13/0014 , B82Y10/00 , B82Y30/00 , G11C13/0016 , H01L51/0595 , Y10S977/936
摘要： Molecular scale electronic devices are disclosed. Such devices include at least two conductive contacts, and a conductive path bridging the contacts. The conductive path is able to be written into a perturbed state by a voltage pulse, which can be of high or low conductivity, relative to an initial state. The conductive path comprises organic molecules including at least one electron-withdrawing group. Room temperature negative differential resistance is exhibited by the devices.
摘要翻译：公开了分子规模的电子器件。这样的装置包括至少两个导电触点和桥接触点的导电路径。导电路径能够被相对于初始状态的电压脉冲写入扰动状态，电压脉冲可以具有高或低导电性。导电路径包括包括至少一个吸电子基团的有机分子。器件表现出室温负差分电阻。

36. 外观设计

USD951864S1 Wireless charger 有权
公开(公告)号：USD951864S1
公开(公告)日：2022-05-17
申请号：US29786425
申请日：2021-06-01
申请人： Jia Chen
设计人： Jia Chen

37. 发明授权

US10675346B2 Antigenic polypeptides comprising pre-hairpin intermediate conformations of HIV-1 GP41 有权
公开(公告)号：US10675346B2
公开(公告)日：2020-06-09
申请号：US13884823
申请日：2011-11-09
申请人： Bing Chen , Gary H. Frey , Jia Chen
发明人： Bing Chen , Gary H. Frey , Jia Chen
IPC分类号： A61K39/21 , C07K14/005 , G01N33/569 , A61K39/00
摘要： Isolated, antigenic polypeptides including a pre-hairpin intermediate conformation of gp41 and vectors encoding such polypeptides are provided. Exemplary pre-hairpin intermediate conformations of gp41 include an oligomerization domain; a heptad repeat 2 motif; and a membrane-proximal external region, where the polypeptide lacks a heptad repeat 1 motif, and where the isolated, antigenic polypeptides elicit production of a broadly neutralizing antibody against HIV when injected into a subject. Antibodies that bind to a pre-hairpin intermediate conformation of gp41 and methods of making antibodies a that bind to pre-hairpin intermediate conformation of gp41 are also provided. Vaccines against a pre-hairpin intermediate conformation of gp41, as well as methods of treating subjects infected with HIV, preventing HIV infection, and inhibiting HIV-mediated activities are also provided. Methods of screening compounds that bind to an isolated, pre-hairpin intermediate conformation of gp41 are further provided.

38. 发明授权

US08711157B2 Switching device and electronic apparatus using the same 失效
标题翻译：开关装置及使用其的电子设备
公开(公告)号：US08711157B2
公开(公告)日：2014-04-29
申请号：US13109042
申请日：2011-05-17
申请人： Yuan-Fa Huang , Peng-Wei Gu , Chang-Dong Xiang , Wen-Juan Ning , Yu-Zhe Geng , Jia Chen , De-Ke Ma
发明人： Yuan-Fa Huang , Peng-Wei Gu , Chang-Dong Xiang , Wen-Juan Ning , Yu-Zhe Geng , Jia Chen , De-Ke Ma
IPC分类号： G06F13/14
CPC分类号： H04N5/268 , G06F3/14 , G09G2370/20 , G09G2370/24
摘要： A switching device includes a plurality of first interfaces respectively coupled to a plurality of computers, a third interface coupled to a display module, and a switching unit coupled to the first interfaces and the third interface. The switching unit is used for selecting one of the first interfaces to be coupled to the third interface in response to a command. The display module receives a video signal from a selected one of the computers through the selected first interface and the third interface, and displays video information.
摘要翻译：交换设备包括分别耦合到多个计算机的多个第一接口，耦合到显示模块的第三接口以及耦合到第一接口和第三接口的交换单元。切换单元用于响应于命令来选择要耦合到第三接口的第一接口之一。显示模块通过所选择的第一接口和第三接口从选定的一台计算机接收视频信号，并显示视频信息。

39. 发明授权

US07666775B2 Split poly-SiGe/poly-Si alloy gate stack 失效
标题翻译：分离多晶硅/多晶硅合金栅叠层
公开(公告)号：US07666775B2
公开(公告)日：2010-02-23
申请号：US12104570
申请日：2008-04-17
申请人： Kevin K. Chan , Jia Chen , Shih-Fen Huang , Edward J. Nowak
发明人： Kevin K. Chan , Jia Chen , Shih-Fen Huang , Edward J. Nowak
IPC分类号： H01L21/3205
CPC分类号： H01L21/2807 , H01L21/28052 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L29/4916 , H01L29/4925 , H01L29/665
摘要： A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiO2 or SixGeyOz interfacial layer of 3 to 4 A thick. The thin SiO2 or SixGeyOz interfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.
摘要翻译：在栅极电介质上的硅纳米晶种子层上形成场效应晶体管器件的多层栅电极堆叠结构。硅纳米晶体层的小晶粒尺寸允许使用原位快速热化学气相沉积（RTCVD）沉积高达至少70％的[Ge]的均匀且连续的多晶硅层。在快速降低的温度下在氧环境中原位吹扫沉积室导致3至4厚度的薄SiO 2或SixGeyOz界面层。薄的SiO 2或SixGeyOz界面层是足够薄且不连续的，以提供对栅极电流的很小的阻力，但是具有足够的[O]以在热处理期间有效阻挡向上的Ge扩散，从而允许随后沉积的钴的硅化物。栅电极堆叠结构用于nFET和pFET两者。

40. 发明授权

US07556427B2 X-ray radiography apparatus and X-ray generator moving device 有权
标题翻译： X射线摄影装置和X射线发生器移动装置
公开(公告)号：US07556427B2
公开(公告)日：2009-07-07
申请号：US12059564
申请日：2008-03-31
申请人： Aimin Yu , Xiumin Liu , Jia Chen
发明人： Aimin Yu , Xiumin Liu , Jia Chen
IPC分类号： H05G1/02
CPC分类号： A61B6/4476 , A61B6/04
摘要： The present invention provides an X-ray radiography apparatus constructed so as to be capable of moving an X-ray generator to as low a position as possible. A X-ray radiography apparatus is of the X-ray radiography apparatus that includes a table which has a transverse direction and a longitudinal direction, and which includes a first X-ray detector and is capable of placing a subject thereon, an X-ray generator that applies X rays to the subject placed on the table, and an X-ray generator moving device that moves the X-ray generator in the longitudinal direction of the table and upward and downward directions thereof. The X-ray generator moving device includes a guide rail disposed in the longitudinal direction in the neighborhood of the table, a guide support post that guides the X-ray generator movably up and down, and a moving member which is formed in an L shape extending in a transverse direction and extending in a longitudinal direction and which is coupled to the guide rail and the guide support post and moved along the guide rail.
摘要翻译：本发明提供一种X射线摄影装置，其构造为能够将X射线发生器移动到尽可能低的位置。 X射线摄影装置是包括具有横向和纵向方向的表格的X射线照相设备，并且包括第一X射线检测器并且能够将被摄体放置在其上，X射线 X射线发生器，其对放置在台面上的被摄体施加X射线;以及X射线发生器移动装置，其沿着工作台的纵向方向和上下方向移动X射线发生器。 X射线发生器移动装置包括沿着桌子附近的纵向设置的导轨，可上下移动地引导X射线发生器的引导支撑柱和形成为L形的移动构件沿横向方向延伸并且在纵向方向上延伸并且连接到导轨和导向支撑柱并且沿着导轨移动。

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