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31. 发明申请

US20110150390A1 IN-PLANE OPTICAL WAVE GUIDE WITH AREA BASED SPLITTER 有权
标题翻译：带有基于区域分割器的平面光波导
公开(公告)号：US20110150390A1
公开(公告)日：2011-06-23
申请号：US13061459
申请日：2008-09-15
申请人： Neal Meyer , Robert Newton Bicknell , Pavel Kornilovich
发明人： Neal Meyer , Robert Newton Bicknell , Pavel Kornilovich
IPC分类号： G02B6/26
CPC分类号： G02B6/125
摘要： An optical interconnect includes a set of splitters. Each splitter includes a source waveguide, a reflection waveguide, an output waveguide, and a partially reflective mirror element with a reflective coating. The source waveguide and the reflection waveguide are optically coupled to the partially reflective element. A photonic signal from the source waveguide is partially reflected off the reflective coating as a reflected signal into the reflection waveguide. The output waveguide is optically coupled to the opposite surface and configured such that a non-reflected portion of the photonic signal propagates into the output waveguide. The reflective coating includes a reflected surface area interfacing with the photonic signal form the source waveguide, and power of the non-reflected portion is a function of the reflective surface area interfacing with source waveguide.
摘要翻译：光学互连包括一组分离器。每个分离器包括源极波导，反射波导，输出波导和具有反射涂层的部分反射镜元件。源极波导和反射波导光耦合到部分反射元件。来自源波导的光子信号被部分地从作为反射信号的反射涂层反射到反射波导中。输出波导光学耦合到相对表面并且被配置为使得光子信号的未反射部分传播到输出波导中。反射涂层包括与形成源极波导的光子信号相连接的反射表面区域，而非反射部分的功率是与源波导接口的反射表面积的函数。

32. 发明申请

US20100112809A1 Multilevel imprint lithography 失效
标题翻译：多层压印光刻
公开(公告)号：US20100112809A1
公开(公告)日：2010-05-06
申请号：US11636264
申请日：2006-12-07
申请人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
发明人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
IPC分类号： H01L21/768
CPC分类号： H01L21/76838 , B81C99/009 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.
摘要翻译：提供具有突出图案的模具，其通过压印过程被压入薄聚合物膜。提供了纳米线和微丝之间的控制连接以及电子电路的其它光刻元件。打印印记被配置成形成大致平行的纳米线的阵列，其具有（1）X方向上的微尺寸，（2）在Y方向上的纳米尺寸和纳米间距，以及Z方向上的三个或更多个不同的高度。如此形成的印章可以用于将特定的单个纳米线连接到微细线或垫的特定微观区域。模具中的突出图案在薄聚合物膜中产生凹陷，因此聚合物层获得模具上图案的相反。在除去模具之后，处理膜，使得聚合物图案可以在基底上的金属/半导体图案上转印。

33. 发明授权

US07375368B2 Superlattice for fabricating nanowires 有权
标题翻译：超晶格用于制造纳米线
公开(公告)号：US07375368B2
公开(公告)日：2008-05-20
申请号：US11582002
申请日：2006-10-17
申请人： Pavel Kornilovich , Peter Mardilovich , Kevin Francis Peters , James Stasiak
发明人： Pavel Kornilovich , Peter Mardilovich , Kevin Francis Peters , James Stasiak
IPC分类号： H01L29/06
CPC分类号： C25D1/04 , C25D1/10 , C25D1/20 , H01L2924/0002 , Y10S977/755 , Y10S977/762 , H01L2924/00
摘要： This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.
摘要翻译：本公开涉及一种用于产生纳米线的系统和方法。可以通过在超晶格中暴露材料层并将材料从暴露层的边缘溶解并转移到衬底上来产生纳米线。还可以通过在超晶格中暴露材料层并将材料沉积到暴露层的边缘上来产生纳米线。

34. 发明授权

US07335579B2 Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making 失效
标题翻译：采用自对准整流元件的纳米级存储器件及其制造方法
公开(公告)号：US07335579B2
公开(公告)日：2008-02-26
申请号：US11331697
申请日：2006-01-12
申请人： James Stasiak , Kevin F Peters , Jennifer Wu , Pavel Kornilovich , Yong Chen
发明人： James Stasiak , Kevin F Peters , Jennifer Wu , Pavel Kornilovich , Yong Chen
IPC分类号： H01L21/20
CPC分类号： B82Y10/00 , H01L27/1021 , H01L27/24 , Y10S977/887 , Y10S977/94
摘要： A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.
摘要翻译：一种存储器件，包括衬底和设置在衬底上的多个自对准纳米整流元件。每个纳米整流元件具有多个第一电极线，并且多个器件结构设置在形成多个自对准纳米整流元件的多个第一电极线上。每个器件结构具有小于约75纳米的至少一个横向尺寸。存储器件还包括设置在器件结构上的多个开关元件，并且在至少一个方向上与器件结构自对准。此外，存储器件包括多个第二电极线，其布置在开关元件上方，电耦合并自对准，从而形成存储器件。

35. 发明授权

US07256435B1 Multilevel imprint lithography 有权
标题翻译：多层压印光刻
公开(公告)号：US07256435B1
公开(公告)日：2007-08-14
申请号：US10453329
申请日：2003-06-02
申请人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
发明人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
IPC分类号： H01L27/10
CPC分类号： H01L21/76838 , B81C99/009 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.
摘要翻译：提供具有突出图案的模具，其通过压印过程被压入薄聚合物膜。提供了纳米线和微丝之间的控制连接以及电子电路的其它光刻元件。打印印记被配置成形成大致平行的纳米线的阵列，其具有（1）X方向上的微尺寸，（2）在Y方向上的纳米尺寸和纳米间距，以及Z方向上的三个或更多个不同的高度。如此形成的印章可以用于将特定的单个纳米线连接到微细线或垫的特定微观区域。模具中的突出图案在薄聚合物膜中产生凹陷，因此聚合物层获得模具上图案的相反。在除去模具之后，处理膜，使得聚合物图案可以在基底上的金属/半导体图案上转印。

36. 发明申请

US20070020773A1 Fabrication Of Nano-object Array 有权
标题翻译：纳米对象阵列的制作
公开(公告)号：US20070020773A1
公开(公告)日：2007-01-25
申请号：US11457776
申请日：2006-07-14
申请人： Pavel Kornilovich , Peter Mardilovich , James Stasiak
发明人： Pavel Kornilovich , Peter Mardilovich , James Stasiak
IPC分类号： H01L21/00
CPC分类号： B81B1/00 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C25D1/04 , C25D1/10 , C25D1/20 , C30B29/605 , C30B29/68 , G01N31/22 , Y10S977/76 , Y10S977/761 , Y10S977/762 , Y10S977/932
摘要： This disclosure relates to a system and method for creating nano-object arrays. A nano-object array can be created by exposing troughs in a corrugated surface to nano-objects and depositing the nano-objects within or orienting the nano-objects with the troughs.
摘要翻译：本公开涉及一种用于创建纳米对象阵列的系统和方法。可以通过将波纹表面中的槽暴露于纳米物体并将纳米物体沉积在纳米物体内或者使其具有槽的方向来形成纳米物体阵列。

37. 发明申请

US20060169592A1 Periodic layered structures and methods therefor 审中-公开
标题翻译：定期分层结构及其方法
公开(公告)号：US20060169592A1
公开(公告)日：2006-08-03
申请号：US11047089
申请日：2005-01-31
申请人： Peter Mardilovich , Pavel Kornilovich , Sriram Ramamoorthi
发明人： Peter Mardilovich , Pavel Kornilovich , Sriram Ramamoorthi
IPC分类号： C25D11/04
CPC分类号： C25D11/02 , C25D1/003
摘要： A periodic layered structure having physical and chemical properties varying periodically at least along a direction perpendicular to its layers is made by providing a substrate, depositing a quantity of non-porous electrochemically oxidizable material over the substrate, at least partially anodizing the non-porous electrochemically oxidizable material, and repeating similar steps until a layered structure having a desired periodicity and a desired total structure thickness is completed.
摘要翻译：具有至少沿垂直于其层的方向周期性变化的物理和化学特性的周期性分层结构通过提供衬底，在衬底上沉积一定数量的无孔电化学可氧化材料，至少部分地阳极氧化非电化学电化学可氧化材料，并重复类似的步骤，直到完成具有期望的周期性和期望的总结构厚度的分层结构。

38. 发明申请

US20060128129A1 Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making 失效
标题翻译：采用自对准整流元件的纳米级存储器件及其制造方法
公开(公告)号：US20060128129A1
公开(公告)日：2006-06-15
申请号：US11331697
申请日：2006-01-12
申请人： James Stasiak , Kevin Peters , Jennifer Wu , Pavel Kornilovich , Yong Chen
发明人： James Stasiak , Kevin Peters , Jennifer Wu , Pavel Kornilovich , Yong Chen
IPC分类号： H01L21/20
CPC分类号： B82Y10/00 , H01L27/1021 , H01L27/24 , Y10S977/887 , Y10S977/94
摘要： A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.
摘要翻译：一种存储器件，包括衬底和设置在衬底上的多个自对准纳米整流元件。每个纳米整流元件具有多个第一电极线，并且多个器件结构设置在形成多个自对准纳米整流元件的多个第一电极线上。每个器件结构具有小于约75纳米的至少一个横向尺寸。存储器件还包括设置在器件结构上的多个开关元件，并且在至少一个方向上与器件结构自对准。此外，存储器件包括多个第二电极线，其布置在开关元件上方，电耦合并自对准，从而形成存储器件。

39. 发明授权

US06926921B2 Imprint lithography for superconductor devices 有权
标题翻译：超导体器件的压印光刻
公开(公告)号：US06926921B2
公开(公告)日：2005-08-09
申请号：US10430125
申请日：2003-05-05
申请人： James Stasiak , Pavel Kornilovich
发明人： James Stasiak , Pavel Kornilovich
IPC分类号： G03F7/00 , G06N99/00 , H01L39/24 , B05D5/12 , H01L39/22
CPC分类号： G06N99/002 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L39/2493 , Y10S505/702 , Y10S977/933 , Y10T29/49014
摘要： One aspect of this disclosure relates to a method of building a superconductor device on a substrate, comprising depositing an imprint layer on at least a portion of the substrate. The imprint layer is imprinted to provide an imprinted portion of the imprint layer and a non-imprinted portion of the imprint layer. A superconductor layer is deposited on at least a portion of the imprinted portion of the imprint layer.
摘要翻译：本公开的一个方面涉及在衬底上构建超导体器件的方法，包括在衬底的至少一部分上沉积压印层。压印层被压印以提供压印层的压印部分和压印层的非压印部分。超导体层沉积在压印层的压印部分的至少一部分上。

40. 发明授权

US06858162B2 Single molecule realization of the switch and doide combination 有权
标题翻译：单分子实现开关和doide组合
公开(公告)号：US06858162B2
公开(公告)日：2005-02-22
申请号：US10114410
申请日：2002-04-01
申请人： Pavel Kornilovich
发明人： Pavel Kornilovich
IPC分类号： G11C13/02 , H01B1/00 , H01L27/00 , H01L31/0328 , H01L51/00 , H01L51/30 , H01L51/20 , C07D218/08
CPC分类号： H01L51/05 , B82Y10/00 , H01L51/0051 , H01L51/0595
摘要： Diodes and switches are combined in a single molecular species. Thus, the single molecular species is capable of performing more than one function. A single molecular species having both diode and switch functionalities is provided. The molecular species is represented by the formula: where A and B are non-identical conducting moieties, I is an insulating bridge between A and B, CL and CR are connectors to left and right electrodes, respectively, and “+” and “−” represent a rotatable dipolar moiety. Further, a diode-switch combination is provided, comprising the single molecular species. The teachings herein provide a set of principles to combine diodes and switches within one molecular species. Further, with the present teachings, only a single molecular species is needed for the fabrication of viable moletronic devices such as crossbar memory arrays. Consequently, device fabrication is easier and cheaper, and the device itself less faulty and more reliable.
摘要翻译：二极管和开关组合在一个单一的分子种类。因此，单一分子种类能够执行多于一种功能。提供具有二极管和开关功能的单一分子种类。分子物种由下式表示：其中A和B是不相同的导电部分，I是A和B之间的绝缘桥，CL和CR分别是与左和右电极的连接器，“+”和“ - ” “表示可旋转的偶极子部分。此外，提供了包括单分子种类的二极管开关组合。本文的教导提供了一组将二极管和开关组合在一个分子种类内的原理。此外，根据本教导，仅需要单个分子种类来制造诸如交叉存储器阵列的可行的摩托车装置。因此，器件制造更容易和更便宜，而且器件本身的故障更少，更可靠。

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