会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 36. 发明申请
    • NANO RESONATOR AND MANUFACTURING METHOD THEREOF
    • 纳米谐振器及其制造方法
    • US20140021443A1
    • 2014-01-23
    • US13846685
    • 2013-03-18
    • Jie Ai YuDuck Hwan KimIn Sang SongJing Cui
    • Jie Ai YuDuck Hwan KimIn Sang SongJing Cui
    • B81C1/00B81B3/00
    • B81C1/00134B81B3/0018H03H3/0072H03H9/2463
    • A nano resonator includes a substrate, a first insulating layer disposed on the substrate, a first source disposed on the first insulating layer at a first position, a first drain disposed on the first insulating layer at a second position spaced apart from the first position so that the first drain faces the first source, a first nano-wire channel having a first end connected to the first source and a second end connected to the first drain, and having a doping type and a doping concentration that are identical to a doping type and a doping concentration of the first source and the first drain, and a second nano-wire channel disposed at a predetermined distance from the first nano-wire channel in a direction perpendicular to the substrate or a direction parallel to the substrate.
    • 纳米谐振器包括衬底,设置在衬底上的第一绝缘层,在第一位置处设置在第一绝缘层上的第一源极,在与第一位置间隔开的第二位置处设置在第一绝缘层上的第一漏极, 第一漏极面向第一源极,第一纳米线通道具有连接到第一源极的第一端和连接到第一漏极的第二端,并且具有与掺杂类型相同的掺杂类型和掺杂浓度 以及第一源极和第一漏极的掺杂浓度以及与第一纳米线通道在垂直于衬底的方向或平行于衬底的方向设置在预定距离处的第二纳米线通道。