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31. 发明授权

US08056023B2 Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask 有权
标题翻译：通过减少用于确定光刻掩模的制造损失的目标边缘对来确定光刻掩模的可制造性
公开(公告)号：US08056023B2
公开(公告)日：2011-11-08
申请号：US12334482
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。掩模布局数据包括多边形，其中每个多边形具有边缘，并且其中每个目标边对对由一个或多个多边形的两个边缘限定。在确定制作光刻掩模时的制造损失时，减少目标边缘对的数量以减少计算量。基于减少数量的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

32. 发明申请

US20110231803A1 Wavefront engineering of mask data for semiconductor device design 有权
标题翻译：用于半导体器件设计的掩模数据的波前工程
公开(公告)号：US20110231803A1
公开(公告)日：2011-09-22
申请号：US12725287
申请日：2010-03-16
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F1/36 , G03F1/70 , G03F7/705
摘要： Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel.
摘要翻译：半导体器件设计的光波数据分为几个区域。对每个区域的波形数据执行第一波前工程，仅考虑每个区域的波形数据，不考虑每个区域的相邻区域的波形数据。基于第一波前工程的结果对每个区域的光波数据进行归一化。至少基于已经归一化的每个区域的波形数据，对每个区域的波形数据执行第二波前工程。第二波前工程考虑了每个区域的波形数据和围绕每个区域的保护带，其包括每个区域的相邻区域的波形数据。可以通过将区域组合成组并且顺序地在并行地对每个组的区域执行第二波前工程来顺序执行第二波前工程。

33. 发明申请

US20100153903A1 DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK USING CONTINUOUS DERIVATIVES CHARACTERIZING THE MANUFACTURABILITY ON A CONTINUOUS SCALE 有权
标题翻译：使用连续衍生物确定表面掩模的可制造性，表征连续性尺度上的可制造性
公开(公告)号：US20100153903A1
公开(公告)日：2010-06-17
申请号：US12334488
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/76 , G03F1/36
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask, for determining a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has a number of edges. Each target edge pair is defined by two of the edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs as selected. Determining the manufacturability of the lithographic mask uses continuous derivatives characterizing the manufacturability of the lithographic mask on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。掩模布局数据包括多边形，其中每个多边形具有多个边。每个目标边对由一个或多个多边形的两个边缘定义。确定了光刻掩模的可制造性，包括制造光刻掩模的制造损失。确定制造损失是基于所选择的目标边缘对。确定平版印刷掩模的可制造性使用连续的衍生物来表征平版印刷掩模的可制造性在连续尺度上。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

34. 发明申请

US20100153901A1 Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask 有权
标题翻译：通过减少用于确定光刻掩模的制造损失的目标边缘对来确定光刻掩模的可制造性
公开(公告)号：US20100153901A1
公开(公告)日：2010-06-17
申请号：US12334482
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。掩模布局数据包括多边形，其中每个多边形具有边缘，并且其中每个目标边对对由一个或多个多边形的两个边缘限定。在确定制作光刻掩模时的制造损失时，减少目标边缘对的数量以减小计算量。基于减少数量的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

35. 发明授权

US08719735B2 Optimizing lithographic mask for manufacturability in efficient manner 失效
标题翻译：以有效的方式优化光刻面具的可制造性
公开(公告)号：US08719735B2
公开(公告)日：2014-05-06
申请号：US13183070
申请日：2011-07-14
申请人： Masaharu Sakamoto , Alan E. Rosenbluth , Marc Alan Szeto-Millstone , Tadanobu Inoue , Kehan Tian , Andreas Waechter , Jonathan Lee , David Osmond Melville
发明人： Masaharu Sakamoto , Alan E. Rosenbluth , Marc Alan Szeto-Millstone , Tadanobu Inoue , Kehan Tian , Andreas Waechter , Jonathan Lee , David Osmond Melville
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F2217/12 , Y02P90/265
摘要： Mask layout data of a lithographic mask includes polygons that each include horizontal and vertical edges. Each of a number of target edge pairs is defined by two edges of one or more of the polygons. A search box having a boundary coincident with a given edge of the edges of the polygons is specified. Whether the search box includes at least one edge of the edges of the polygons in addition to the given edge is determined. Where the search box includes at least one edge, at least one of the target edge pairs is specified as including the given edge and one of the at least one edge. For each target edge pair that has been specified, a manufacturability penalty value is determined. A dynamic manufacturability constraint table and a non-zero multiplier table are maintained.
摘要翻译：光刻掩模的掩模布局数据包括各自包括水平和垂直边缘的多边形。多个目标边对中的每一个由一个或多个多边形的两个边界定义。指定具有与多边形的边缘的给定边缘重合的边界的搜索框。确定搜索框是否包括除了给定边缘之外的多边形的边缘的至少一个边缘。在搜索框包括至少一个边缘的情况下，目标边缘对中的至少一个被指定为包括给定边缘和至少一个边缘中的一个边缘。对于已经指定的每个目标边对，确定可制造性惩罚值。维持动态可制造性约束表和非零乘数表。

36. 发明授权

US08453076B2 Wavefront engineering of mask data for semiconductor device design 有权
标题翻译：用于半导体器件设计的掩模数据的波前工程
公开(公告)号：US08453076B2
公开(公告)日：2013-05-28
申请号：US12725287
申请日：2010-03-16
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F1/36 , G03F1/70 , G03F7/705
摘要： Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel.
摘要翻译：半导体器件设计的光波数据分为几个区域。对每个区域的波形数据执行第一波前工程，仅考虑每个区域的波形数据，不考虑每个区域的相邻区域的波形数据。基于第一波前工程的结果对每个区域的光波数据进行归一化。至少基于已经归一化的每个区域的波形数据，对每个区域的波形数据执行第二波前工程。第二波前工程考虑了每个区域的波形数据和围绕每个区域的保护带，其包括每个区域的相邻区域的波形数据。可以通过将区域组合成组并且顺序地在并行地对每个组的区域执行第二波前工程来顺序执行第二波前工程。

37. 发明授权

US08448098B2 Fracturing continuous photolithography masks 有权
标题翻译：压裂连续光刻掩模
公开(公告)号：US08448098B2
公开(公告)日：2013-05-21
申请号：US13453262
申请日：2012-04-23
申请人： Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
发明人： Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.
摘要翻译：在说明性实施例中提供了用于压裂可用于光刻的连续掩模的方法，系统和计算机可用程序产品。从连续掩码边缘上的一组点中选择第一个原点。在边缘上识别第一终点，使得第一原点和第一终点之间的间隔度量至少等于阈值。使用第一原点和第一终点确定用于压裂的几种替代方案。计算与几种替代方案中的每一种相关联的成本，并且选择替代方案之一作为优选的压裂。从该组点形成几对原点和终点。每对都有一对优选的压裂成本。连续掩模使用几对的子集进行断裂。

38. 发明申请

US20120210281A1 FRACTURING CONTINUOUS PHOTOLITHOGRAPHY MASKS 有权
公开(公告)号：US20120210281A1
公开(公告)日：2012-08-16
申请号：US13453262
申请日：2012-04-23
申请人： YING LIU , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
发明人： YING LIU , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.

39. 发明申请

US20120017194A1 METHOD FOR FAST ESTIMATION OF LITHOGRAPHIC BINDING PATTERNS IN AN INTEGRATED CIRCUIT LAYOUT 有权
标题翻译：用于快速估计集成电路布局中的平面结合图案的方法
公开(公告)号：US20120017194A1
公开(公告)日：2012-01-19
申请号：US12835891
申请日：2010-07-14
申请人： Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G06F9/455 , G06F17/50
CPC分类号： G03F1/70 , G06F17/5081
摘要： The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate θi spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate θi, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate θi, and a total energy entropy factor comprising total energy entropy of said diffraction orders. The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=1, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=1. The value of the lithographic difficulty metric may be used to identify patterns in a design layout that are binding patterns in an optimization computation. The lithographic difficulty metric may be used to design integrated circuits that have good, relatively easy-to-print characteristics.
摘要翻译：本发明提供了一种光刻难度度量，其是能量比因子的函数，能量比因子包括沿着角坐标系的衍射级的难以打印能量与易于打印能量的比率; i空间频率空间，包括沿着所述角坐标和所述衍射级的能量熵的能量熵因子; i，包括所述衍射级沿着所述角坐标和所述角度的所述衍射级的相位熵的相位熵因子; i，以及包括所述总体能量熵的总能量熵因子衍射指令。难以打印的能量包括在r = 0和r = 1附近的空间频率空间的归一化径向坐标r的值的衍射级的能量，并且易于打印的能量包括位于r = 0的邻域和r = 1附近的归一化的径向坐标r的中间值处的衍射级的能量。光刻难度度量的值可用于识别在优化计算中的结合模式的设计布局中的图案。光刻难度度可用于设计具有良好的，相对易于打印的特性的集成电路。

40. 发明申请

US20100283982A1 High Contrast Lithographic Masks 有权
标题翻译：高对比度平版印刷面膜
公开(公告)号：US20100283982A1
公开(公告)日：2010-11-11
申请号：US12463742
申请日：2009-05-11
申请人： Saeed Bagheri , David O.S. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , David O.S. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F1/34
摘要： A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.
摘要翻译：用于等亮度优化的结构和方法。该方法可以包括在衬底上投影具有多个亮点的多个亮图案和具有多个暗点的多个暗图案，产生多个亮点的多个联合特征向量和多个暗点选择预定数量的联合特征向量以投影所述多个亮图案，从所述多个亮点生成多个自然采样点，其中所述多个自然采样点具有基本相等的强度，并且获得孔径的表示从所述多个天然采样点开始，其中所述孔的表示的图像具有基本均匀的强度。

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