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31. 发明申请

US20100102421A1 INTEGRATED CIRCUIT CHIP WITH SEAL RING STRUCTURE 有权
标题翻译：集成电路芯片采用密封圈结构
公开(公告)号：US20100102421A1
公开(公告)日：2010-04-29
申请号：US12650549
申请日：2009-12-31
申请人： Tien-Chang Chang , Shi-Bai Chen , Tao Cheng , Yu-Hua Huang
发明人： Tien-Chang Chang , Shi-Bai Chen , Tao Cheng , Yu-Hua Huang
IPC分类号： H01L23/58
CPC分类号： H01L23/5225 , H01L23/564 , H01L23/585 , H01L27/0203 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit chip includes an analog and/or RF circuit block and a seal ring structure surrounding the analog and/or RF circuit block. The seal ring structure comprises a continuous outer seal ring and an inner seal ring, wherein the inner seal ring comprises a gap that is situated in front of the analog and/or RF circuit block.
摘要翻译：集成电路芯片包括模拟和/或RF电路块和围绕模拟和/或RF电路块的密封环结构。密封环结构包括连续的外密封环和内密封环，其中内密封环包括位于模拟和/或RF电路块前面的间隙。

32. 发明授权

US07671469B2 SiGe device with SiGe-embedded dummy pattern for alleviating micro-loading effect 有权
标题翻译： SiGe器件采用SiGe嵌入式虚拟图案，可减轻微负载效应
公开(公告)号：US07671469B2
公开(公告)日：2010-03-02
申请号：US11967264
申请日：2007-12-31
申请人： Tung-Hsing Lee , Ming-Tzong Yang , Tao Cheng , Ching-Chung Ko , Tien-Chang Chang , Yu-Tung Chang
发明人： Tung-Hsing Lee , Ming-Tzong Yang , Tao Cheng , Ching-Chung Ko , Tien-Chang Chang , Yu-Tung Chang
IPC分类号： H01L23/52
CPC分类号： H01L29/7848 , H01L21/02532 , H01L21/02658 , H01L21/823412 , H01L21/823418 , H01L29/165 , H01L29/66628 , H01L29/66636
摘要： A semiconductor device with dummy patterns for alleviating micro-loading effect includes a semiconductor substrate having thereon a middle annular region between an inner region and an outer region; a SiGe device on the semiconductor substrate within the inner region; and a plurality of dummy patterns provided on the semiconductor substrate within the middle annular region. At least one of the dummy patterns contains SiGe.
摘要翻译：具有用于减轻微负载效应的虚设图形的半导体器件包括其内部区域和外部区域之间具有中间环形区域的半导体衬底; 内部区域中的半导体衬底上的SiGe器件; 以及设置在中间环形区域内的半导体衬底上的多个虚设图案。至少一个虚拟图案包含SiGe。

33. 发明申请

US20090166676A1 SIGE DEVICE WITH SIGE-EMBEDDED DUMMY PATTERN FOR ALLEVIATING MICRO-LOADING EFFECT 有权
标题翻译：具有用于识别微载荷效应的信号嵌入式模式的信号装置
公开(公告)号：US20090166676A1
公开(公告)日：2009-07-02
申请号：US11967264
申请日：2007-12-31
申请人： Tung-Hsing Lee , Ming-Tzong Yang , Tao Cheng , Ching-Chung Ko , Tien-Chang Chang , Yu-Tung Chang
发明人： Tung-Hsing Lee , Ming-Tzong Yang , Tao Cheng , Ching-Chung Ko , Tien-Chang Chang , Yu-Tung Chang
IPC分类号： H01L29/78
CPC分类号： H01L29/7848 , H01L21/02532 , H01L21/02658 , H01L21/823412 , H01L21/823418 , H01L29/165 , H01L29/66628 , H01L29/66636
摘要： A semiconductor device with dummy patterns for alleviating micro-loading effect includes a semiconductor substrate having thereon a middle annular region between an inner region and an outer region; a SiGe device on the semiconductor substrate within the inner region; and a plurality of dummy patterns provided on the semiconductor substrate within the middle annular region. At least one of the dummy patterns contains SiGe.
摘要翻译：具有用于减轻微负载效应的虚设图形的半导体器件包括其内部区域和外部区域之间具有中间环形区域的半导体衬底; 内部区域中的半导体衬底上的SiGe器件; 以及设置在中间环形区域内的半导体衬底上的多个虚设图案。至少一个虚拟图案包含SiGe。

34. 发明申请

US20050207078A1 ESD protection device 有权
标题翻译： ESD保护装置
公开(公告)号：US20050207078A1
公开(公告)日：2005-09-22
申请号：US11081705
申请日：2005-03-17
申请人： Hsueh-Kun Liao , Tao Cheng
发明人： Hsueh-Kun Liao , Tao Cheng
IPC分类号： H01L27/02 , H02H9/00
CPC分类号： H01L27/0266
摘要： For maintaining the regular operating current in an inner circuit under electrostatic discharge (ESD) event, the present invention provides an ESD protection device to control an ESD path switch in the turned-on condition by employing a MOS device and a latch-detected turned-on circuit. The MOS device has a self-aligned silicidation (Salicide) therein. The present invention is used to stabilize operation efficiency and reduce the area of an ESD protection device without a silicide block disposed therein for enhancing the ESD protection capability.
摘要翻译：为了在静电放电（ESD）事件下保持内部电路中的正常工作电流，本发明提供一种ESD保护装置，通过采用MOS器件和锁存检测的转向开关来控制导通状态下的ESD路径开关，上电路。 MOS器件中具有自对准硅化物（Salicide）。本发明用于稳定运行效率并减小ESD保护装置的面积，而不会在其中设置硅化物块以提高ESD保护能力。

35. 发明申请

US20050013073A1 Protection circuit for electro static discharge 有权
标题翻译：静电放电保护电路
公开(公告)号：US20050013073A1
公开(公告)日：2005-01-20
申请号：US10838272
申请日：2004-05-05
申请人： Tao Cheng , Hsueh-Kun Liao
发明人： Tao Cheng , Hsueh-Kun Liao
IPC分类号： H01L23/60 , H01L27/02 , H02H9/00
CPC分类号： H01L27/0285 , H01L27/0255 , H01L2924/0002 , H01L2924/00
摘要： An electro static discharge (ESD) protection circuit employing a field-effect transistor (FET) having no silicide block disposed thereon. It is connected with an internal circuit so as to prevent the internal circuit from the influence of an ESD event, wherein the internal circuit has at least a signal input end. The ESD protection circuit includes: an ESD clamp circuit for providing an ESD grounding path as an ESD occurs; and at least a pair of p-n junction diodes. The p-n junction diodes are stacked so that one of the p-n junction diodes has a n-type end coupled to the signal input end and the other one has a p-type end coupled to the signal input end as well. The ESD clamp circuit has at least a FET, whose drain has no silicide block disposed thereon.
摘要翻译：采用不设置硅化物块的场效应晶体管（FET）的静电放电（ESD）保护电路。与内部电路连接，以防止内部电路受到ESD事件的影响，其中内部电路至少具有信号输入端。 ESD保护电路包括：用于提供ESD接地路径作为ESD发生的ESD钳位电路; 和至少一对p-n结二极管。 p-n结二极管被堆叠，使得p-n结二极管中的一个具有耦合到信号输入端的n型端，另一端具有耦合到信号输入端的p型端。 ESD钳位电路至少具有FET，其漏极没有设置在其上的硅化物块。

36. 发明授权

US06531382B1 Use of a capping layer to reduce particle evolution during sputter pre-clean procedures 有权
标题翻译：在溅射预清洁过程中使用覆盖层来减少颗粒的发生
公开(公告)号：US06531382B1
公开(公告)日：2003-03-11
申请号：US10140662
申请日：2002-05-08
申请人： Tao Cheng , Wen-Hsin Huang , Jiun-Pyng You , Lin-June Wu , Shih-Tzung Chang , Ming-Jei Lee , Chun-Chang Chen , Yu-Ku Lin , Tong-Hua Kuan , Ying-Lang Wang
发明人： Tao Cheng , Wen-Hsin Huang , Jiun-Pyng You , Lin-June Wu , Shih-Tzung Chang , Ming-Jei Lee , Chun-Chang Chen , Yu-Ku Lin , Tong-Hua Kuan , Ying-Lang Wang
IPC分类号： H01L213205
CPC分类号： H01L21/76802 , H01L21/76838
摘要： A process for preparing a surface of a lower level metal structure, exposed at the bottom of a sub-micron diameter opening, to allow a low resistance interface to be obtained when overlaid with an upper level metal structure, has been developed. A disposable, capping insulator layer is first deposited on the composite insulator layer in which the sub-micron diameter opening will be defined in, to protect underlying components of the composite insulator from a subsequent metal pre-metal procedure. After anisotropically defining the sub-micron diameter opening in the capping insulator, and composite insulator layers, and after removal of the defining photoresist shape, an argon sputtering procedure is used to remove native oxide from the surface of the lower level metal structure. In addition to native oxide removal the argon sputtering procedure, featuring a negative DC bias applied to the substrate, also removes the capping insulator layer from the top surface of the composite insulator layer. An in situ metal deposition then allows a clean interface to result between the overlying metal layer, and the underlying plasma treated, metal surface.
摘要翻译：已经开发了制备在亚微米直径开口的底部露出的下层金属结构的表面以允许在与上层金属结构重叠时获得低电阻界面的方法。首先将一次性封盖绝缘体层沉积在复合绝缘体层上，在该复合绝缘层上将限定亚微米直径的开口，以保护复合绝缘子的下面的部件免于后续的金属预金属工艺。在各向异性地限定封盖绝缘体中的亚微米直径开口和复合绝缘体层之后，并且在去除限定的光致抗蚀剂形状之后，使用氩溅射方法从下层金属结构的表面去除自然氧化物。除了自然氧化物除去之外，具有施加到衬底的负DC偏压的氩溅射工艺也从复合绝缘体层的顶表面去除封盖绝缘体层。原位金属沉积然后允许在上覆的金属层和下面的等离子体处理的金属表面之间产生干净的界面。

37. 发明授权

US10032131B2 Data services for enterprises leveraging search system data assets 有权
公开(公告)号：US10032131B2
公开(公告)日：2018-07-24
申请号：US13527601
申请日：2012-06-20
申请人： Tao Cheng , Kris Ganjam , Kaushik Chakrabarti , Zhimin Chen , Vivek R. Narasayya , Surajit Chaudhuri
发明人： Tao Cheng , Kris Ganjam , Kaushik Chakrabarti , Zhimin Chen , Vivek R. Narasayya , Surajit Chaudhuri
IPC分类号： G06F13/00 , G06Q10/10
摘要： A data service system is described herein which processes raw data assets from at least one network-accessible system (such as a search system), to produce processed data assets. Enterprise applications can then leverage the processed data assets to perform various environment-specific tasks. In one implementation, the data service system can generate any of: synonym resources for use by an enterprise application in providing synonyms for specified terms associated with entities; augmentation resources for use by an enterprise application in providing supplemental information for specified seed information; and spelling-correction resources for use by an enterprise application in providing spelling information for specified terms, and so on.

38. 发明授权

US09092517B2 Generating synonyms based on query log data 有权
标题翻译：根据查询日志数据生成同义词
公开(公告)号：US09092517B2
公开(公告)日：2015-07-28
申请号：US12235635
申请日：2008-09-23
申请人： Stelios Paparizos , Tao Cheng , Hady W. Lauw
发明人： Stelios Paparizos , Tao Cheng , Hady W. Lauw
IPC分类号： G06F17/30
CPC分类号： G06F17/30737
摘要： An approach is described for generating synonyms to supplement at least one information item, such as, in one case, a set of related items. The approach can involve an expansion phase, a clean-up phase, and a reduction phase. In the expansion phase, the approach identifies, for each related item, a set of initial synonym candidates. In the clean-up phase, the approach removes noise from the set of initial synonym candidates (if such noise exists), to provide a set of filtered synonym candidate items. In the reduction phase, the approach ranks and applies a threshold (or thresholds) to the set of filtered synonym candidate items, to generate, for each information item, a set of selected synonyms. The approach uses query log data at various points in its operation. The selected synonyms can be used to improve the effectiveness of user searches.
摘要翻译：描述了用于生成同义词以补充至少一个信息项（例如，一种情况下）一组相关项目的方法。该方法可以涉及扩张阶段，清理阶段和减少阶段。在扩展阶段，该方法为每个相关项目确定一组初始同义词候选。在清理阶段，该方法从一组初始同义词候选中消除噪声（如果存在这种噪声），以提供一组过滤的同义词候选项。在缩减阶段，该方法排列并将阈值（或阈值）应用于经过筛选的同义词候选项集合，以针对每个信息项生成一组所选择的同义词。该方法在其操作的各个点使用查询日志数据。所选择的同义词可用于提高用户搜索的有效性。

39. 发明授权

US08461127B2 p27 and p21 in gene therapies 有权
公开(公告)号：US08461127B2
公开(公告)日：2013-06-11
申请号：US13342819
申请日：2012-01-03
申请人： David T. Scadden , Tao Cheng
发明人： David T. Scadden , Tao Cheng
IPC分类号： C12N15/11
CPC分类号： C12N5/0647 , A01K2217/05 , A61K48/00 , A61K2035/124 , C07K2319/00 , C12N2501/125 , C12N2501/145 , C12N2501/23 , C12N2501/26 , C12N2501/405
摘要： The expansion of a population of stem cells or progenitor cells, or precursors thereof, may be accomplished by disrupting or inhibiting p21cip1/waf1 and/or p27, cyclin dependent kinase inhibitors. In the absence of p27 activity, progenitor cells move into the cell cycle and proliferate; whereas in the absence of p21 activity, stem cells move into the cell cycle and proliferate without losing their pluripotentiality (i.e., their ability to differentiate into the various cell lines found in the blood stream). Any type of stem cell or progenitor cell, or precursor thereof, including, but not limited to, hematopoietic, gastrointestinal, lung, neural, skin, muscle, cardiac muscle, renal, mesenchymal, embryonic, fetal, or liver cell may be used in accordance with the invention. The present invention provides a method of expanding a cell population, cells with decreased p27 and/or p21 activity, transgenic animals with a disrupted p27 and/or p21 gene, pharmaceutical compositions comprising the cells of the invention, and methods of using these cells in gene therapy (e.g., stem cell gene therapy) and bone marrow transplantation.

40. 发明授权

US08445605B2 Halogen-free flame retardant resin composition, and, prepreg, laminate, and laminate for printed circuit made therefrom 有权
标题翻译：无卤阻燃树脂组合物，以及由其制成的印刷电路用预浸料，层压板和层叠体
公开(公告)号：US08445605B2
公开(公告)日：2013-05-21
申请号：US12861742
申请日：2010-08-23
申请人： Yueshan He , Tao Cheng , Shiguo Su , Biwu Wang , Jie Li
发明人： Yueshan He , Tao Cheng , Shiguo Su , Biwu Wang , Jie Li
IPC分类号： B32B15/08 , B32B17/04 , B32B27/04 , B32B27/38 , C08K3/20 , C08K3/36 , C08L61/06 , C08L63/02 , C08L63/04 , C08K7/14
CPC分类号： C08K5/357 , C08G59/5073 , C08G59/621 , C08G59/686 , C08J5/24 , C08J2385/02 , C08J2463/00 , C08K5/5399 , C08L63/00 , H05K1/0326 , H05K1/0353 , H05K1/0366 , H05K2201/012 , H05K2201/0209 , Y10T428/24994 , Y10T428/31511 , Y10T428/31529
摘要： The present invention provides a halogen-free flame retardant resin composition, and, a prepreg, a laminate, and a laminate for printed circuit that are made from the halogen-free flame retardant resin composition. The halogen-free flame retardant resin composition comprises: (A) 40-80 parts by weight of the mixture of a phenoxyphosphazene compound (A1) and a dihydrobenzoxazine ring-containing compound (A2), and, the weight ratio between the phenoxyphosphazene compound (A1) and the dihydrobenzoxazine ring-containing compound (A2) being between 1:10 and 1:2; (B) 15-45 parts by weight of a polyepoxy compound; (C) 5-25 parts by weight of a phenolic resin type hardener; and (D) 0.1-1 parts by weight of an imidazole type compound as the curing accelerator. The prepreg, the laminate, and the laminate for printed circuit that are made from the halogen-free flame retardant resin composition provided by the present invention, have excellent flame retardancy, as well as has high glass transition temperature (Tg), high thermal resistance, high flexural strength, high reliability, low dielectric dissipation factor, low moisture, low C.T.E, good chemical resistance, and good processability.
摘要翻译：本发明提供一种无卤阻燃树脂组合物，以及由无卤阻燃树脂组合物制成的无卤阻燃树脂组合物，预浸料，层压材料和印刷电路用层压材料。无卤阻燃树脂组合物包含：（A）40-80重量份的苯氧基磷腈化合物（A1）和含二氢苯并恶嗪环的化合物（A2）的混合物，以及苯氧基磷腈化合物（ A1）和含二氢苯并恶嗪环的化合物（A2）为1:10至1:2之间; （B）15-45重量份聚环氧化合物; （C）5-25重量份酚醛树脂型固化剂; 和（D）0.1-1重量份作为固化促进剂的咪唑型化合物。由本发明提供的无卤阻燃树脂组合物制成的预浸料，层压板和印刷电路用层压板具有优异的阻燃性，并且具有高玻璃化转变温度（Tg），高耐热性抗弯强度高，可靠性高，介电损耗因数低，水分低，CTE低，耐化学性好，加工性好。

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