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31. 发明授权

US06277249B1 Integrated process for copper via filling using a magnetron and target producing highly energetic ions 失效
标题翻译：通过使用磁控管进行填充的铜的集成工艺和产生高能离子的靶
公开(公告)号：US06277249B1
公开(公告)日：2001-08-21
申请号：US09518180
申请日：2000-03-02
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
IPC分类号： C23C1435
CPC分类号： H01L21/76844 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls. The magnets in back of the top wall may have an outer magnet surrounding an inner magnet of the opposite polarity. The high aspect ratio of the trough also reduces asymmetry in coating the sidewalls of a deep hole at the edge of the wafer. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形槽。位于槽周围的各种磁性装置形成一个支撑等离子体的磁场，该等离子体延伸在大容积的槽上。例如，磁性装置可以包括设置在槽的径向内壁中的一侧上并且在槽的径向外壁外侧的另一侧上的磁体，以产生延伸穿过槽的磁场，密度等离子体从槽的顶部延伸到底部。大的等离子体体积增加了溅射的金属原子将被电离的可能性。磁性装置可以包括磁性线圈，可以在槽顶壁的后面包括另外的磁体，以在那里增加溅射，并且可以包括靠近槽侧壁底部的约束磁体。顶壁后面的磁体可以具有围绕相反极性的内磁体的外磁体。槽的高纵横比也降低了在晶片边缘涂覆深孔侧壁的不对称性。集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

32. 发明授权

US06232665B1 Silicon-doped titanium wetting layer for aluminum plug 失效
标题翻译：用于铝插头的掺硅钛润湿层
公开(公告)号：US06232665B1
公开(公告)日：2001-05-15
申请号：US09328117
申请日：1999-06-08
申请人： Gongda Yao , Peijun Ding , Zheng Xu , Hoa Kieu
发明人： Gongda Yao , Peijun Ding , Zheng Xu , Hoa Kieu
IPC分类号： H01L2348
CPC分类号： H01L21/76843 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A process for fabricating metal plugs, such as aluminum plugs, in a semiconductor workpiece. The invention is suitable for filling narrow, high aspect ratio holes, and the invention minimizes the formation of TiAl3 or other products of interdiffusion between the plug and the wetting layer. First, an optional barrier layer is created by covering the bottom of a hole with a film containing titanium nitride doped with silicon. Second, a wetting layer is created by covering the side walls of a hole with a film containing titanium doped with silicon, in a Ti:Si molar ratio greater than 1:2. Preferably, the wetting layer is created by sputter deposition using a titanium sputtering target containing 0.1% to 20% wt silicon, most preferably 5% to 10% wt silicon. Third, the hole is filled by depositing a material consisting primarily of aluminum. The hole preferably is filled by sputter deposition using an aluminum sputtering target, optionally containing dopants such as copper. To facilitate filling the hole without voids, the aluminum sputter deposition preferably is performed “warm”, i.e., with the workpiece at a temperature below the melting point of aluminum but high enough to promote reflow of the deposited material. The silicon atoms in the wetting layer inhibit the titanium from reacting with the aluminum, and the wetting layer facilitates filling the hole with the aluminum material without leaving unfilled voids.
摘要翻译：一种用于在半导体工件中制造诸如铝塞的金属插头的工艺。本发明适用于填充狭窄的高纵横比孔，并且本发明使塞子和润湿层之间的TiAl 3或其他相互扩散产物的形成最小化。首先，通过用含有掺杂硅的氮化钛的膜覆盖孔的底部来产生可选的阻挡层。第二，通过用含有掺杂硅的钛的膜覆盖孔的侧壁，Ti：Si摩尔比大于1:2产生润湿层。优选地，通过使用含有0.1重量％至20重量％硅，最优选5重量％至10重量％硅的钛溅射靶的溅射沉积来产生润湿层。第三，通过沉积主要由铝构成的材料填充孔。优选地，通过使用铝溅射靶的溅射沉积来填充孔，任选地含有诸如铜的掺杂剂。为了方便填充孔而没有空隙，铝溅射沉积优选地进行“暖”，即工件在低于铝的熔点的温度下，但足够高以促进沉积材料的回流。润湿层中的硅原子阻止钛与铝反应，并且润湿层有助于用铝材料填充孔而不留下未填充的空隙。

33. 外观设计

USD440582S1 Sputtering chamber coil 失效
公开(公告)号：USD440582S1
公开(公告)日：2001-04-17
申请号：US29090631
申请日：1998-07-13
申请人： Praburam Gopalraja , Zheng Xu , Michael Rosenstein , John C. Forster , Peijun Ding
设计人： Praburam Gopalraja , Zheng Xu , Michael Rosenstein , John C. Forster , Peijun Ding

34. 发明授权

US06217721B1 Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer 失效
标题翻译：填充狭窄的孔径并与金属形成互连，利用晶体取向的衬层
公开(公告)号：US06217721B1
公开(公告)日：2001-04-17
申请号：US08628835
申请日：1996-04-05
申请人： Zheng Xu , John Forster , Tse-Yong Yao , Jaim Nulman , Fusen Chen
发明人： Zheng Xu , John Forster , Tse-Yong Yao , Jaim Nulman , Fusen Chen
IPC分类号： C23C1434
CPC分类号： H01L21/2855 , C23C14/0036 , C23C14/046 , C23C14/0641 , C23C14/32 , C23C14/358 , H01J37/34 , H01J2237/32 , H01L21/28518 , H01L21/76846 , H01L21/76876 , H01L21/76877 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An aluminum sputtering process, particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also usefull for forming interconnects that are highly resistant to electromigration. A liner or barrier layer is first deposited by a high-density plasma (HDP) physical vapor deposition (PVD, also called sputtering) process, such as is done with an inductively coupled plasma. If a contact is connected at its bottom to a silicon element, the first sublayer of the liner layer is a Ti layer, which is silicided to the silicon substrate. The second sublayer comprises TiN, which not only acts as a barrier against the migration of undesirable components into the underlying silicon but also when deposited with an HDP process and biased wafer forms a dense, smooth crystal structure. The third sublayer comprises Ti and preferably is graded from TiN to Ti. Over the liner layer, an aluminum layer is deposited in a standard, non-HDP process. The liner layer allows the hottest part of the aluminum deposition to be performed at a relatively low temperature between 320 and 500° C., preferably between 350 and 420° C., while still filling narrow plug holes, and the TiN does not need to be annealed to form an effective barrier against diffusion into the silicon. A horizontal interconnect formed by the inventive process is resistant to electromigration.
摘要翻译：铝溅射工艺，特别适用于填充通过电介质层形成的高纵横比的通孔和触点，并且也可用于形成高度抵抗电迁移的互连。衬垫或阻挡层首先通过高密度等离子体（HDP）物理气相沉积（PVD，也称为溅射）工艺沉积，例如用电感耦合等离子体进行。如果接触件的底部连接到硅元件，衬垫层的第一子层是Ti层，硅层被硅化到硅衬底。第二子层包括TiN，其不仅用作防止不期望的组分迁移到下面的硅中的阻挡层，而且当用HDP工艺沉积并且偏置的晶片形成致密的，平滑的晶体结构时。第三子层包含Ti，优选从TiN到Ti分级。在衬里层上，铝层以标准的非HDP工艺沉积。衬垫层允许铝沉积的最热部分在320和500℃之间的较低温度下进行，优选在350和420℃之间，同时仍然填充窄的塞孔，并且TiN不需要进行退火以形成抵抗硅中扩散的有效屏障。由本发明方法形成的水平互连对于电迁移是耐受的。

35. 发明授权

US5976334A Reliable sustained self-sputtering 失效
标题翻译：可靠的持续自溅射
公开(公告)号：US5976334A
公开(公告)日：1999-11-02
申请号：US978433
申请日：1997-11-25
申请人： Jianming Fu , Zheng Xu
发明人： Jianming Fu , Zheng Xu
IPC分类号： C23C14/32 , C23C14/34 , C23C14/54 , H01J37/34 , C23C14/00
CPC分类号： H01J37/3444 , C23C14/32 , C23C14/3457 , C23C14/54 , H01J37/3405
摘要： A plasma physical vapor deposition (PVD) reactor configured for self sustained sputtering in which no sputtering working gas is required but the sputtered ions are sufficient to sustain the sputtering from the target. According to the invention, the power applied to the sputtering target is monitored to determine if sustained self-sputtering is being maintained. If the electrical parameters or other parameters in the chamber indicate that the self-sustained plasma has collapsed, a reinitialization procedure is begun including: admitting a working gas such as argon into the chamber; again exciting the plasma; and then effectively eliminating the working gas.
摘要翻译：等离子体物理气相沉积（PVD）反应器，其被配置用于不需要溅射工作气体的自持溅射，但溅射离子足以维持靶的溅射。根据本发明，监测施加到溅射靶的功率，以确定是否保持持续的自溅射。如果腔室中的电气参数或其他参数指示自持血浆已经塌缩，则开始重新初始化过程，包括：将诸如氩气的工作气体引入腔室; 再次激发等离子体; 然后有效地消除工作气体。

36. 发明授权

US5868847A Clamp ring for shielding a substrate during film layer deposition 失效
标题翻译：用于在膜层沉积期间屏蔽衬底的夹环
公开(公告)号：US5868847A
公开(公告)日：1999-02-09
申请号：US358161
申请日：1994-12-16
申请人： Aihua Chen , Zheng Xu , Howard Grunes , Avi Tepman , Igor Kogan
发明人： Aihua Chen , Zheng Xu , Howard Grunes , Avi Tepman , Igor Kogan
IPC分类号： C23C14/50 , C23C16/458 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/687 , C23C16/00
CPC分类号： H01L21/68721 , C23C14/50 , C23C16/4585
摘要： A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a clamp ring suspended in the chamber on a chamber shield. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the clamp ring off the shield. After deposition is complete, the support member retracts through the shield, to reposition the clamp on the shield. In the event that a deposition material layer has formed between the substrate and the clamp ring, the clamp ring includes a plurality of actuators thereon which force the substrate out of the clamp ring as the clamp ring is repositioned on the shield.
摘要翻译：用于在衬底上沉积膜层的腔室包括支撑构件，衬底被定位在其上用于在腔室中进行处理，以及在室屏蔽罩上悬挂在腔室中的夹紧环。支撑构件可定位在腔室中以在其上接收衬底，并且还可定位成使衬底穿过屏蔽件，从而将夹紧环提离屏蔽。沉积完成后，支撑构件通过屏蔽件缩回，以将夹具重新定位在屏蔽上。在衬底和夹紧环之间形成沉积材料层的情况下，夹紧环包括多个致动器，当钳位环重新定位在屏蔽上时，该致动器迫使衬底离开夹紧环。

37. 发明授权

US5763851A Slotted RF coil shield for plasma deposition system 失效
标题翻译：用于等离子体沉积系统的开槽RF线圈屏蔽
公开(公告)号：US5763851A
公开(公告)日：1998-06-09
申请号：US676599
申请日：1996-07-03
申请人： John Forster , Aihua Chen , Howard Grunes , Robert B. Lowrance , Ralf Hofmann , Zheng Xu , Fernand Dorleans
发明人： John Forster , Aihua Chen , Howard Grunes , Robert B. Lowrance , Ralf Hofmann , Zheng Xu , Fernand Dorleans
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32477 , H01J37/321 , Y10S156/916
摘要： A coil shield assembly for an RF field coil in a plasma processing system includes a first shield positioned inside the coil. The first shield has a central opening substantially surrounding a central space of a processing chamber in which the plasma is maintained. At least one slot is formed in the first shield and extends therethrough. A barrier is positioned between the first shield and the coil and spaced apart from the first shield near the at least one slot. The slot permits an RF signal from the coil to couple with the plasma, and the first shield and the barrier are structured and arranged to prevent plasma ions or sputtered material from bombarding the coil by a direct path from the central space and through the at least one slot.
摘要翻译：用于等离子体处理系统中的RF场线圈的线圈屏蔽组件包括位于线圈内部的第一屏蔽件。第一屏蔽件具有基本上围绕处理室的中心空间的中心开口，其中维持等离子体。在第一屏蔽件中形成至少一个槽，并延伸穿过其中。屏障位于第一屏蔽和线圈之间，并且在靠近至少一个槽的位置处与第一屏蔽隔开。该槽允许来自线圈的RF信号与等离子体耦合，并且第一屏蔽和屏障被构造和布置成防止等离子体离子或溅射材料通过从中心空间的直接路径至少通过至少一个槽

38. 发明授权

US5610103A Ultrasonic wave assisted contact hole filling 失效
标题翻译：超声波辅助接触孔填充
公开(公告)号：US5610103A
公开(公告)日：1997-03-11
申请号：US570762
申请日：1995-12-12
申请人： Zheng Xu , Fusen Chen
发明人： Zheng Xu , Fusen Chen
IPC分类号： C23C14/00 , H01L21/203 , H01L21/28 , H01L21/768 , H01L21/463
CPC分类号： H01L21/76882
摘要： A method of eliminating or substantially eliminating voids formed in the bottom of high aspect ratio holes following the physical vapor deposition of a material over the surface of a substrate. The method includes placing the substrate in an ultrasonic processing chamber filled with a fluid and having an ultrasonic source. The ultrasonic source is used to generate ultrasonic waves at a frequency no higher than is sufficient to cause a flow of the material adjacent the voids into these voids, without significantly affecting the deposited material elsewhere on the substrate.
摘要翻译：在材料表面上物理气相沉积之后，消除或基本消除在高纵横比孔的底部形成的空隙。该方法包括将衬底放置在填充有流体并具有超声波源的超声处理室中。超声波源用于产生超过足以导致邻近空隙的材料流入这些空隙中的频率的超声波，而不会显着影响衬底上其它地方的沉积材料。

39. 发明授权

US10765742B2 Methods of treating CD166-expressing cancer 有权
公开(公告)号：US10765742B2
公开(公告)日：2020-09-08
申请号：US15745582
申请日：2016-07-18
申请人： Nicole Suciu-Foca , George Vlad , Zheng Xu
发明人： Nicole Suciu-Foca , George Vlad , Zheng Xu
IPC分类号： A61K39/00 , A61K39/395 , C07K16/28 , G01N33/574 , A61K38/17 , A61P35/00
摘要： It has now been discovered that activated lymphocyte cell adhesion molecule (ALCAM)—also known as CD166—is the ligand of the innate immune receptor ILT3 that is expressed by DC and monocytes. It has been further discovered that the specific binding of ILT3 to its ligand CD166 on the surface of CD166-expressing cancer cells, arrested cancer cell growth and initiated apoptosis. Therefore, certain embodiments relate to methods and compositions for treating CD166-expressing cancers by administering ILT3Fc, full-length ILT3 or any CD166 ligand-binding fragment thereof.

40. 发明授权

US09800053B2 Solar panels with integrated cell-level MPPT devices 有权
公开(公告)号：US09800053B2
公开(公告)日：2017-10-24
申请号：US13252987
申请日：2011-10-04
申请人： Christopher James Beitel , Jiunn Benjamin Heng , Jianming Fu , Zheng Xu
发明人： Christopher James Beitel , Jiunn Benjamin Heng , Jianming Fu , Zheng Xu
IPC分类号： H01L31/042 , H02J3/38 , H01L31/048 , H02S40/32
CPC分类号： H02J3/385 , H01L31/048 , H02S40/32 , Y02E10/58
摘要： One embodiment of the present invention provides a solar cell panel that includes a front-side cover, a back-side cover, a number of solar cells situated between the front-side cover and the back-side cover, and a number of maximum power point tracking (MPPT) devices situated between the front-side cover and the back-side cover.

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