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31. 发明申请

US20120286369A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120286369A1
公开(公告)日：2012-11-15
申请号：US13553386
申请日：2012-07-19
申请人： Jung Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
发明人： Jung Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
IPC分类号： H01L29/78
CPC分类号： H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
摘要翻译：半导体器件包括限定形成在半导体衬底中的有源区的隔离层。在隔离层上执行第一凹陷处理以暴露活性区域的边缘部分。执行第一舍入处理以围绕活动区域的边缘部分。在隔离层上进行第二凹陷处理。执行第二舍入处理以围绕活动区域的边缘部分。

32. 发明授权

US08247859B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08247859B2
公开(公告)日：2012-08-21
申请号：US13079635
申请日：2011-04-04
申请人： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
发明人： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
IPC分类号： H01L29/76
CPC分类号： H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
摘要翻译：半导体器件包括限定形成在半导体衬底中的有源区的隔离层。在隔离层上执行第一凹陷处理以暴露活性区域的边缘部分。执行第一舍入处理以围绕活动区域的边缘部分。在隔离层上进行第二凹陷处理。执行第二舍入处理以围绕活动区域的边缘部分。

33. 发明授权

US08244292B2 Apparatus and method for power distribution by frequency allocation in multi-frequency allocation broadband wireless communication system 有权
标题翻译：在多频分配宽带无线通信系统中通过频率分配进行功率分配的装置和方法
公开(公告)号：US08244292B2
公开(公告)日：2012-08-14
申请号：US12035753
申请日：2008-02-22
申请人： Kwan-Hee Roh , June Moon , Yong-Seok Kim , Soon-Young Yoon , Sung-Woo Park
发明人： Kwan-Hee Roh , June Moon , Yong-Seok Kim , Soon-Young Yoon , Sung-Woo Park
IPC分类号： H04B7/00 , H04B7/185 , H04W72/00 , H01Q11/12 , H04J1/00
CPC分类号： H04L5/023 , H04L5/0007 , H04L5/0037 , H04L5/0058 , H04W24/00 , H04W52/343 , H04W52/346 , H04W72/0453
摘要： An apparatus and method for power distribution by Frequency Allocation (FA) in a multi-band broadband wireless communication system are provided. The method includes detecting at least one of a loading value and a performance efficiency value by band, calculating a power distribution value by band using the detected value and calculating a power value by band using the calculated band power distribution value. The method and apparatus provide a scheme that can vary a power distribution of each band according to need and cope with subscriber capacity more flexibly when a plurality of diverse systems coexist.
摘要翻译：提供了一种在多频带宽带无线通信系统中通过频率分配（FA）进行功率分配的装置和方法。该方法包括根据频带检测负载值和性能效率值中的至少一个，使用检测值按频带计算功率分配值，并使用所计算的频带功率分布值，按频带计算功率值。该方法和装置提供了一种可以根据需要改变每个频带的功率分配并在多个不同系统共存时更灵活地处理用户容量的方案。

34. 发明授权

US08045517B2 Method and apparatus for transmitting/receiving data in a communication system using multiple frequency bands 有权
标题翻译：用于在使用多个频带的通信系统中发送/接收数据的方法和装置
公开(公告)号：US08045517B2
公开(公告)日：2011-10-25
申请号：US12029224
申请日：2008-02-11
申请人： Jae-Woo So , June Moon , Yong-Seok Kim , Soon-Young Yoon
发明人： Jae-Woo So , June Moon , Yong-Seok Kim , Soon-Young Yoon
IPC分类号： H04W4/00
CPC分类号： H04W28/06 , H04W12/02 , H04W72/00
摘要： A method for transmitting/receiving data in a communication system using multiple frequency bands. The transmission method includes fragmenting a desired transmission Service Data Unit (SDU) in units of Packet Data Units (PDUs); and transmitting the fragmented PDUs over at least two frequency bands among the multiple frequency bands. Each of the multiple frequency bands is supported by a system having backward compatibility with a legacy system. The reception method includes decrypting a wireless resource (MAP) allocated separately for each of the frequency bands to extract fragment information therefrom; and receiving PDUs over the frequency bands separately, and restoring the SDU according to fragment information corresponding to the corresponding frequency band.
摘要翻译：一种在使用多个频带的通信系统中发送/接收数据的方法。传输方法包括以分组数据单元（PDU）为单位分段所需的传输业务数据单元（SDU）; 以及在所述多个频带中的至少两个频带上发送所述分段PDU。多个频带中的每一个由具有与传统系统的向后兼容性的系统支持。所述接收方法包括对针对每个所述频带分别分配的无线资源（MAP）进行解密以从其中提取片段信息; 并且分别在频带上接收PDU，并且根据对应于相应频带的片段信息恢复SDU。

35. 发明申请

US20110037141A1 Semiconductor Device and Method of Fabricating the Same 有权
公开(公告)号：US20110037141A1
公开(公告)日：2011-02-17
申请号：US12906652
申请日：2010-10-18
申请人： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
发明人： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
IPC分类号： H01L29/02
CPC分类号： H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

36. 发明申请

US20100202282A1 Method and apparatus for ranging in Broadband wireless access communication system 有权
标题翻译：宽带无线接入通信系统测距方法及装置
公开(公告)号：US20100202282A1
公开(公告)日：2010-08-12
申请号：US12658291
申请日：2010-02-05
申请人： Hyon-Goo Kang , Jae-Hyok Lee , Ki-Young Han , In-Seok Hwang , Yong-Seok Kim , Byoung-Ha Yi , Byoung-Gi Jang
发明人： Hyon-Goo Kang , Jae-Hyok Lee , Ki-Young Han , In-Seok Hwang , Yong-Seok Kim , Byoung-Ha Yi , Byoung-Gi Jang
IPC分类号： H04W72/04 , H04J11/00
CPC分类号： H04J13/0074 , H04W72/0406
摘要： An apparatus and operation method of a Mobile Station (MS) for ranging in a broadband wireless access communication system includes receiving information for ranging code hopping from a Base Station (BS). The MS determines a hopping offset value that is a start of a ranging codes group using the information for ranging code hopping. The MS also determines a ranging codes group using the hopping offset value, and randomly selects at least one or more ranging codes among the determined ranging codes group and transmitting the selected ranging codes to the BS.
摘要翻译：用于在宽带无线接入通信系统中测距的移动站（MS）的装置和操作方法包括从基站（BS）接收测距码跳频的信息。 MS使用测距码跳变信息来确定作为测距码组的起点的跳频偏移值。 MS还使用跳频偏移值确定测距码组，并且在所确定的测距码组中随机选择至少一个或多个测距码，并向BS发送所选择的测距码。

37. 发明授权

US07692970B2 Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same 有权
标题翻译：使用基于年龄的验证电压来提高数据可靠性的闪存器件和操作方法
公开(公告)号：US07692970B2
公开(公告)日：2010-04-06
申请号：US11943887
申请日：2007-11-21
申请人： Ki-Tae Park , Yong-Seok Kim , Ki-Nam Kim , Yeong-Taek Lee
发明人： Ki-Tae Park , Yong-Seok Kim , Ki-Nam Kim , Yeong-Taek Lee
IPC分类号： G11C11/34
CPC分类号： G11C16/344 , G11C16/3454
摘要： Disclosed is a method of verifying a programmed condition of a flash memory device, being comprised of: determining a level of an additional verifying voltage in response to the number of programming/erasing cycles of memory cells; conducting a verifying operation to programmed memory cells with an initial verifying voltage lower than the additional verifying voltage; and selectively conducting an additional verifying operation with the additional verifying voltage to the program-verified memory cells in response to the number of programming/erasing cycles.
摘要翻译：公开了一种验证闪速存储器件的编程状态的方法，其包括：响应于存储器单元的编程/擦除循环的数量确定额外的验证电压的电平; 对初始验证电压低于附加验证电压的程序存储单元执行验证操作; 以及响应于所述编程/擦除周期的数量，选择性地对所述经过程序验证的存储器单元执行附加验证电压的附加验证操作。

38. 发明申请

US20100017920A1 SCANNING PROBE MICROSCOPE WITH TILTED SAMPLE STAGE 审中-公开
标题翻译：扫描探针显微镜与倾斜的样品阶段
公开(公告)号：US20100017920A1
公开(公告)日：2010-01-21
申请号：US12502177
申请日：2009-07-13
申请人： San-IL Park , Yong-Seok Kim , Jitae Kim , Joonhul Kim , Hyunwoo Lee
发明人： San-IL Park , Yong-Seok Kim , Jitae Kim , Joonhul Kim , Hyunwoo Lee
IPC分类号： G01N13/10
CPC分类号： G01Q70/02 , G01Q10/06
摘要： A scanning probe microscope has a tilting stage on which a sample is mounted. The sample is scanned back and forth with the stage being tilted clockwise during a forward scan and counterclockwise during a reverse scan. A first surface contour of the sample is determined from the response of the probe and the tilt angle of the stage during the forward scan. A second surface contour of the sample is determined from the response of the probe and the tilt angle of the stage during the reverse scan. A final surface contour of the sample is obtained by combining the first and second surface contours.
摘要翻译：扫描探针显微镜具有安装样品的倾斜台。样品前后扫描，舞台在正向扫描期间顺时针倾斜，反向扫描时逆时针倾斜。样品的第一表面轮廓根据探针的响应和在正向扫描期间的台的倾斜角度来确定。样品的第二表面轮廓是根据探针的反应和反转扫描阶段的倾斜角度来确定的。通过组合第一和第二表面轮廓获得样品的最终表面轮廓。

39. 发明授权

US07644447B2 Scanning probe microscope capable of measuring samples having overhang structure 有权
标题翻译：扫描探针显微镜能够测量具有突出结构的样品
公开(公告)号：US07644447B2
公开(公告)日：2010-01-05
申请号：US11601144
申请日：2006-11-17
申请人： Sang-il Park , Yong-Seok Kim , Jitae Kim , Sang Han Chung , Hyun-Seung Shin , Jung-Rok Lee , Euichul Hwang
发明人： Sang-il Park , Yong-Seok Kim , Jitae Kim , Sang Han Chung , Hyun-Seung Shin , Jung-Rok Lee , Euichul Hwang
IPC分类号： G01N23/00
CPC分类号： G01Q10/04 , Y10S977/85 , Y10S977/851 , Y10S977/872 , Y10S977/873 , Y10S977/874
摘要： Provided is a scanning probe microscope capable of precisely analyzing characteristics of samples having an overhang surface structure. The scanning probe microscope comprises a first probe, a first scanner changing a position of the first probe along a straight line, and a second scanner changing a position of a sample in a plane, wherein the straight line in which the position of the first probe is changed by using the first scanner is non-perpendicular to the plane in which the position of the sample is changed by using the second scanner.
摘要翻译：提供了能够精确地分析具有突出表面结构的样品的特性的扫描探针显微镜。扫描探针显微镜包括第一探针，沿着直线改变第一探针的位置的第一扫描器和改变样品在平面中的位置的第二扫描仪，其中，第一探针的位置的直线通过使用第二扫描器使用第一扫描器与垂直于样品位置改变的平面非垂直地改变。

40. 发明授权

US07592665B2 Non-volatile memory devices having floating gates 失效
标题翻译：具有浮动门的非易失性存储器件
公开(公告)号：US07592665B2
公开(公告)日：2009-09-22
申请号：US11594327
申请日：2006-11-08
申请人： Joon-Hee Lee , Jong-Ho Park , Jin-Hyun Shin , Sung-Hoi Hur , Yong-Seok Kim , Jong-Won Kim
发明人： Joon-Hee Lee , Jong-Ho Park , Jin-Hyun Shin , Sung-Hoi Hur , Yong-Seok Kim , Jong-Won Kim
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42324
摘要： A nonvolatile memory device may include a substrate having a cell region, and a cell device isolation layer on the cell region of the substrate to define a cell active region. A floating gate may include a lower floating gate and an upper floating gate sequentially stacked on the cell active region, and a tunnel insulation pattern may be between the floating gate and the cell active region. A control gate electrode may be on the floating gate, and a blocking insulation pattern may be between the control gate electrode and the floating gate. More particularly, the upper floating gate may include a flat portion on the lower floating gate and a pair of wall portions extending upward from both edges of the flat portion adjacent to the cell device isolation layer. Moreover, a width of an upper portion of a space surrounded by the flat portion and the pair of wall portions may be larger than a width of a lower portion of the space. Related methods are also discussed.
摘要翻译：非易失性存储器件可以包括具有单元区域的衬底和在衬底的单元区域上的单元器件隔离层，以限定电池活性区域。浮置栅极可以包括顺序堆叠在单元有源区上的下浮置栅极和上浮置栅极，并且隧道绝缘图案可以在浮栅和电池有源区之间。控制栅极电极可以在浮置栅极上，并且阻挡绝缘图案可以在控制栅电极和浮栅之间。更具体地说，上部浮动栅极可以包括在下部浮动栅极上的平坦部分和从邻近电池器件隔离层的平坦部分的两个边缘向上延伸的一对壁部分。此外，由平坦部分和一对壁部分围绕的空间的上部的宽度可以大于空间的下部的宽度。还讨论了相关方法。

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