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31. 发明授权

US07374867B2 Enhancing photoresist performance using electric fields 有权
标题翻译：使用电场增强光致抗蚀剂性能
公开(公告)号：US07374867B2
公开(公告)日：2008-05-20
申请号：US10679816
申请日：2003-10-06
申请人： Robert Bristol , Heidi Cao , Manish Chandhok , Robert Meagley , Vijayakumar S. Ramachandrarao
发明人： Robert Bristol , Heidi Cao , Manish Chandhok , Robert Meagley , Vijayakumar S. Ramachandrarao
IPC分类号： G03F7/26
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
摘要翻译：电场可以有利地用于光刻工艺的各个步骤。例如，在预曝光烘烤之前，已经旋涂在晶片上的光致抗蚀剂可以暴露于电场以取向未曝光的光致抗蚀剂内的聚集体或其它组分。通过将这些聚集体或其它组分与电场对准，可以减少线边缘粗糙度，例如与193纳米光致抗蚀剂结合。同样地，在曝光期间，可以通过独特的电极或使用射频线圈施加电场。此外，可以通过沉积导电电极在光刻工艺中的几乎任何点处施加电场，导电电极随后在显影期间被去除。最后，可以在显影过程中施加电场以改善线边缘粗糙度。

32. 发明申请

US20060267156A1 Electrospray and enhanced electrospray deposition of thin films on semiconductor substrates 有权
标题翻译：在半导体衬底上的电喷雾和增强的电喷雾沉积薄膜
公开(公告)号：US20060267156A1
公开(公告)日：2006-11-30
申请号：US10947016
申请日：2004-09-22
申请人： Robert Meagley
发明人： Robert Meagley
IPC分类号： H01L23/58 , H01L21/469
CPC分类号： B05B5/0255 , B05D1/04 , B05D3/067 , B05D3/068 , B05D3/145 , C23C4/123 , C23C26/00
摘要： A method of forming a thin film on a substrate to fabricate a microelectronic device, a microelectronic device comprising a thin film deposited according to the method, and a system comprising the microelectronic device. The thin film may include on of a low k thin film, a thin film comprising photoresist, and a sacrificial polymer. The method comprises dispersing a precursor preparation into a spray of charged droplets through subjecting the liquid precursor preparation to electrostatic forces; directing the charged droplets to move toward the substrate; and allowing the charged droplets to generate a beam of gas-phase ions as the charged droplets move toward the substrate. The method further includes directing the gas-phase ions to impinge upon the substrate to deposit the thin film thereon to yield a deposited thin film on the substrate.
摘要翻译：一种在衬底上形成薄膜以制造微电子器件的方法，包括根据该方法沉积的薄膜的微电子器件以及包括该微电子器件的系统。薄膜可以包括低k薄膜，包含光致抗蚀剂的薄膜和牺牲聚合物。该方法包括通过使液体前体制剂经受静电力将前体制剂分散在带电液滴的喷雾中; 引导带电液滴朝向衬底移动; 并且随着带电液滴向衬底移动，允许带电液滴产生气相离子束。该方法还包括引导气相离子冲击衬底以在其上沉积薄膜以在衬底上产生沉积的薄膜。

33. 发明申请

US20060255432A1 Forming semiconductor structures 有权
公开(公告)号：US20060255432A1
公开(公告)日：2006-11-16
申请号：US11485078
申请日：2006-07-12
申请人： Robert Meagley , Kevin O'Brien , Tian-An Chen , Michael Goodner , James Powers , Huey-Chiang Liou
发明人： Robert Meagley , Kevin O'Brien , Tian-An Chen , Michael Goodner , James Powers , Huey-Chiang Liou
IPC分类号： H01L23/58
CPC分类号： H01L23/5222 , H01L21/02118 , H01L21/02134 , H01L21/02137 , H01L21/02164 , H01L21/0234 , H01L21/02351 , H01L21/312 , H01L21/76224 , H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.

34. 发明申请

US20060068318A1 Pixelated photoresists 有权
标题翻译：像素化光刻胶
公开(公告)号：US20060068318A1
公开(公告)日：2006-03-30
申请号：US10956284
申请日：2004-09-30
申请人： Robert Meagley , Michael Goodner , Bob Leet , Michael McSwiney
发明人： Robert Meagley , Michael Goodner , Bob Leet , Michael McSwiney
IPC分类号： G03C1/76
CPC分类号： G03F7/0382 , G03F7/0392 , Y10S430/114 , Y10S430/115
摘要： A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.
摘要翻译：光致酸产生剂，溶解度开关，可光成象物质和猝灭剂的故意设计的放置和尺寸约束（分子量分布）在光致抗蚀剂内形成各个像素。在照射时，在被照射以对光致抗蚀剂进行图案化的各个像素内发生独立的反应。这些像素可以具有各种形式，包括由几个聚合物链形成的聚合物链，大体积聚集体，胶束或胶束。此外，这些像素可以被设计为自组装到其上施加光致抗蚀剂的基板上。

35. 发明申请

US20060057506A1 Controlling resist profiles through substrate modification 审中-公开
公开(公告)号：US20060057506A1
公开(公告)日：2006-03-16
申请号：US11272316
申请日：2005-11-10
申请人： Michael Goodner , Robert Meagley , Michael Leeson
发明人： Michael Goodner , Robert Meagley , Michael Leeson
IPC分类号： G03C5/00
CPC分类号： G03F7/11 , G03F7/09 , G03F7/091 , G03F7/095
摘要： Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.

36. 发明申请

US20060024616A1 Basic quencher/developer solutions for photoresists 失效
标题翻译：用于光致抗蚀剂的基本猝灭剂/显影剂溶液
公开(公告)号：US20060024616A1
公开(公告)日：2006-02-02
申请号：US11143126
申请日：2005-06-01
申请人： Shan Clark , Kim-Khanh Ho , James Clarke , Ernisse Putna , Wang Yueh , Robert Meagley
发明人： Shan Clark , Kim-Khanh Ho , James Clarke , Ernisse Putna , Wang Yueh , Robert Meagley
IPC分类号： G03C5/00
CPC分类号： G03F7/327
摘要： A basic developer/quencher solution formulated to include at least one supercritical fluid or liquid solvent and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The supercritical fluid or liquid solvent may be carbon dioxide and the base may be quaternary ammonium salt that has side groups that increase the solubility of the quaternary ammonium salt in carbon dioxide.
摘要翻译：配制成包括至少一种超临界流体或液体溶剂和碱的基本显影剂/猝灭剂溶液可用于淬灭光致抗蚀剂内的光生酸，以及显影光致抗蚀剂。超临界流体或液体溶剂可以是二氧化碳，碱可以是具有增加季铵盐在二氧化碳中的溶解度的侧基的季铵盐。

37. 发明申请

US20060003253A1 Energy harvesting molecules and photoresist technology 失效
标题翻译：能量收集分子和光刻胶技术
公开(公告)号：US20060003253A1
公开(公告)日：2006-01-05
申请号：US10881475
申请日：2004-06-30
申请人： Robert Meagley , Michael Goodner , Robert Leet , Michael McSwiney
发明人： Robert Meagley , Michael Goodner , Robert Leet , Michael McSwiney
IPC分类号： G03C1/492
CPC分类号： G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A composition including a first moiety; and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that energy harvested at the second moiety may be transferred to the first moiety. An article of manufacture including a film including a first moiety and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that collectively the first and second moieties have an electron capture cross-section greater than the electron capture cross-section of the first moiety alone. A method including forming a film on a substrate including a first moiety and a different second moiety; exposing the film to photonic or charged particle radiation; and patterning the film.
摘要翻译：包含第一部分的组合物; 以及能够从外部源收获能量的不同的第二部分，其中第二部分被定位成使得在第二部分收获的能量可以转移到第一部分。包括包括第一部分和能够从外部源收集能量的不同第二部分的膜的制品，其中所述第二部分被定位成使得所述第一部分和所述第二部分的电子捕获截面大于所述电子仅捕获第一部分的横截面。一种方法，包括在包括第一部分和不同的第二部分的基底上形成膜; 将膜暴露于光子或带电粒子辐射; 并构图。

38. 发明申请

US20050221218A1 Novel anti-reflective coatings 有权
标题翻译：新型抗反射涂层
公开(公告)号：US20050221218A1
公开(公告)日：2005-10-06
申请号：US10815528
申请日：2004-03-31
申请人： Shan Clark , Ernisse Putna , Robert Meagley
发明人： Shan Clark , Ernisse Putna , Robert Meagley
IPC分类号： G03C1/492 , G03F7/09 , G03F7/40
CPC分类号： G03F7/091 , G03F7/40
摘要： Anti-reflective materials such as bottom anti-reflective coatings (BARC's) and sacrificial light absorbing materials (SLAM) may be made more effective at preventing coherent light or electron beam reflection from a substrate by including in the anti-reflective material an additive to alter the radiation beam path of the reflected light or electrons. The radiation beam path altering additive may be a reflective material or a refractive material. The inclusion of such a radiation beam bath altering additive may reduce line width roughness and increase critical dimension (CD) control of interconnect lines and vias.
摘要翻译：防反射材料如底部抗反射涂层（BARC）和牺牲光吸收材料（SLAM）可以更有效地通过在抗反射材料中包含添加剂来改变基底的相干光或电子束反射，从而改变反射光或电子的辐射束路径。辐射束路径改变添加剂可以是反射材料或折射材料。包含这种辐射束浴改变添加剂可以减小线宽粗糙度并增加互连线和通孔的临界尺寸（CD）控制。

39. 发明申请

US20050129926A1 Sealing porous dielectric materials 失效
标题翻译：密封多孔电介质材料
公开(公告)号：US20050129926A1
公开(公告)日：2005-06-16
申请号：US10735122
申请日：2003-12-12
申请人： Grant Kloster , Robert Meagley , Michael Goodner , Kevin O'brien
发明人： Grant Kloster , Robert Meagley , Michael Goodner , Kevin O'brien
IPC分类号： B32B3/26 , B32B9/04
CPC分类号： B32B3/26 , B32B2310/12 , B32B2457/00 , H01L21/76814 , Y10T428/249953 , Y10T428/249978 , Y10T428/249993 , Y10T428/31663
摘要： Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may be sealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.
摘要翻译：公开了用于最小化与邻近多孔电介质材料的微电子器件处理有关的缺点的方法和结构。特别地，公开了化学方案，其中可以通过将偶联剂附着到孔的表面来密封多孔介电材料。偶联剂可以在电介质表面中的反应性基团上形成全部或部分盖，或者可以交联以密封电介质中的孔。

40. 发明申请

US20050106886A1 Method to modulate etch rate in SLAM 失效
标题翻译：在SLAM中调制蚀刻速率的方法
公开(公告)号：US20050106886A1
公开(公告)日：2005-05-19
申请号：US10715956
申请日：2003-11-17
申请人： Michael Goodner , Robert Meagley , Kevin O'Brien
发明人： Michael Goodner , Robert Meagley , Kevin O'Brien
IPC分类号： H01L21/311 , H01L21/768 , H01L21/4763 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76808 , H01L21/31144 , H01L21/76802
摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.
摘要翻译：描述了几种用于通过改变其组成以使其与周围电介质的蚀刻速率相匹配来调节牺牲光吸收材料（SLAM）的蚀刻速率的技术。这在双镶嵌工艺中特别有用，其中SLAM填充通孔开口并与周围的电介质材料一起蚀刻以形成覆盖通孔开口的沟槽。

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