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31. 发明申请

US20100077673A1 ANTILOADING COMPOSITION FOR AN ABRASIVE ARTICLE AND ABRASIVE ARTICLE HAVING AN ANTILOADING COATING 审中-公开
标题翻译：用于抛光物品的防粘组合物和具有防粘涂层的磨砂物品
公开(公告)号：US20100077673A1
公开(公告)日：2010-04-01
申请号：US12594611
申请日：2008-03-25
申请人： Hitoshi Oka , Satoru Takinami
发明人： Hitoshi Oka , Satoru Takinami
IPC分类号： C08K5/09 , B24D11/00
CPC分类号： B24C11/00 , B24C11/005 , B24D3/346
摘要： To improve the endurance of the antiloading effect of an antiloading composition for an abrasive article. The antiloading composition for an abrasive article, comprising a metal salt of a fatty acid and a binding resin, wherein a coating formed therefrom has wetting tension of more than 44 mN/m.
摘要翻译：为了提高磨料制品用抗压组合物的抗荷载作用的耐久性。用于磨料制品的抗压组合物，其包含脂肪酸的金属盐和粘合树脂，其中由其形成的涂层具有大于44mN / m的润湿张力。

32. 发明授权

US06315836B1 Clean, recirculating processing method which prevents surface contamination of an object 失效
标题翻译：清洁，循环处理方法，防止物体的表面污染
公开(公告)号：US06315836B1
公开(公告)日：2001-11-13
申请号：US09351288
申请日：1999-07-12
申请人： Hitoshi Oka , Fumio Morita , Masataka Fujiki , Akinobu Yamaoka
发明人： Hitoshi Oka , Fumio Morita , Masataka Fujiki , Akinobu Yamaoka
IPC分类号： B08B300
CPC分类号： H01L21/67017 , B08B3/10 , B08B11/02 , Y10S134/902
摘要： A clean, recirculating and processing method which prevents surface contamination of an object, such as a semiconductor, semi-conductor wafer, glass for LCD or magnetic disk is provided which includes covering the front and rear surfaces of an object to be processed with front and rear shielding plates and allows the object to rotate relative to the front and rear shielding plates. The fluid is supplied between the front surface of the object and the front shielding plate allowing the front surface to be processed. The remaining fluid is collected and recirculated between the rear surface of the object and the rear shielding plate allowing the rear surface of the object to be processed. An apparatus for accomplishing the method is also disclosed.
摘要翻译：提供一种清洁，再循环和处理方法，其防止诸如半导体，半导体晶片，LCD或磁盘的玻璃的物体的表面污染，其包括用前面和后面的待处理物体的前表面和后表面后屏蔽板并允许物体相对于前后屏蔽板旋转。流体被提供在物体的前表面和前屏蔽板之间，从而允许前表面被处理。剩余的流体被收集并在物体的后表面和后屏蔽板之间再循环，从而允许物体的后表面被处理。还公开了一种用于实现该方法的装置。

33. 发明授权

US06241908B1 Piezoelectric ceramics 有权
标题翻译：压电陶瓷
公开(公告)号：US06241908B1
公开(公告)日：2001-06-05
申请号：US09377923
申请日：1999-08-20
申请人： Masakazu Hirose , Hitoshi Oka , Takeo Tsukada , Yasuharu Miyauchi , Toshiyuki Suzuki , Yoshinori Asakura
发明人： Masakazu Hirose , Hitoshi Oka , Takeo Tsukada , Yasuharu Miyauchi , Toshiyuki Suzuki , Yoshinori Asakura
IPC分类号： C04B35462
CPC分类号： C04B35/475 , C04B35/6262 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3267 , C04B2235/3275 , C04B2235/3296 , C04B2235/72 , C04B2235/78 , C04B2235/787 , C04B2235/81 , H01L41/187
摘要： Piezoelectric ceramics which is made of compounds shaped in bismuth layer containing Sr, Bi, Ti and Ln (lanthanoid). The compound contains SrBi4Ti4O15 typed crystals. In the piezoelectric ceramics, an atomic ratio of Ln/(Sr+Ln) is 0
摘要翻译：由含有Sr，Bi，Ti和Ln（镧系元素）的铋层中形成的化合物制成的压电陶瓷。该化合物包含SrBi 4 Ti 4 O 15 型晶体。在压电陶瓷中，Ln /（Sr + Ln）的原子比为0

34. 发明授权

US06184541B2 Thin film transistor and method of producing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06184541B2
公开(公告)日：2001-02-06
申请号：US09205775
申请日：1998-12-03
申请人： Hitoshi Oka , Yutaka Ito
发明人： Hitoshi Oka , Yutaka Ito
IPC分类号： H01L2900
CPC分类号： H01L29/66757 , H01L29/78621
摘要： On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity concentration, and the region 5 has a high impurity concentration. The length of the low concentration region 4 measured from the edge of gate insulating film 9 is not smaller than the average grain size of the polycrystal semiconductor film 3. The LCD device employing the TFT thus constructed is free from white spots (micro brighter spots) in a high temperature atmosphere.
摘要翻译：在绝缘基板1上形成的多晶半导体膜3上，形成具有低浓度区域4和高浓度区域5的LDD结构的源极6和漏极7。区域4的杂质浓度低，区域5的杂质浓度高。从栅极绝缘膜9的边缘测量的低浓度区域4的长度不小于多晶半导体膜3的平均晶粒尺寸。采用如此构造的TFT的LCD器件没有白点（微亮点）在高温环境中。

35. 发明授权

US6129886A Method of preparation of piezoelectric ceramics 失效
标题翻译：压电陶瓷的制备方法
公开(公告)号：US6129886A
公开(公告)日：2000-10-10
申请号：US048900
申请日：1998-03-27
申请人： Kazushi Tachimoto , Mahoko Takada , Kenji Horino , Kazuo Miyabe , Hitoshi Oka
发明人： Kazushi Tachimoto , Mahoko Takada , Kenji Horino , Kazuo Miyabe , Hitoshi Oka
IPC分类号： C04B35/46 , C04B35/472 , C04B41/00 , C04B41/80 , H01L41/187 , H01L41/22
CPC分类号： C04B41/009 , C04B41/0072 , C04B41/80 , H01L41/187 , H01L41/257 , H01L41/43
摘要： The object of the present invention is to realize the piezoelectric ceramics which, even when used as high frequency elements utilizing third harmonics wave of thickness longitudinal vibration, are small in temperature coefficient of resonant frequency and high in mechanical Q value and easy to correspond to the trend toward miniaturization and low voltage driving. When the piezoelectric ceramics with lead titanate as its main component are manufactured in order to achieve this object, it was decided that the piezoelectric ceramics be manufactured by the manufacturing method, wherein a heat treatment is performed between a firing process and a polarization process in the atmosphere of oxygen partial pressure less than the oxygen partial pressure of the atmospheric pressure at temperatures more than 500.degree. C. and not more than the firing temperatures.
摘要翻译：本发明的目的是实现压电陶瓷，其即使在利用厚度纵向振动的三次谐波作为高频元件时，谐振频率的温度系数小，机械Q值高，容易对应于趋向于小型化和低压驱动。以制造钛酸铅为主要成分的压电陶瓷为了达到上述目的，决定通过制造方法制造压电陶瓷，其中在烧成工序和极化工序之间进行热处理氧气分压的气氛小于温度大于500℃且不大于烧制温度的大气压的氧分压。

36. 发明授权

US5409544A Method of controlling adhesion of fine particles to an object in liquid 失效
标题翻译：控制细粒子与液体中物体的粘附的方法
公开(公告)号：US5409544A
公开(公告)日：1995-04-25
申请号：US117652
申请日：1993-09-08
申请人： Katsuhiro Ota , Akio Saito , Yoichi Takahara , Hitoshi Oka
发明人： Katsuhiro Ota , Akio Saito , Yoichi Takahara , Hitoshi Oka
IPC分类号： B08B3/12 , H01L21/306 , B08B9/00
CPC分类号： H01L21/02052 , B08B3/12 , Y10S134/902 , Y10S148/017
摘要： A method of controlling the adhesion of fine particles to an object in a solution characterized in that the adhesion of fine particles in the solution is prevented or reduced by adding into the solution a material, which is capable of controlling the zeta potential (surface potential) of the fine particles, in the amount of 10.sup.-7 to 25% by volume.
摘要翻译：一种控制溶液中微粒附着到物体上的方法，其特征在于通过向该溶液中加入能够控制ζ电位（表面电位）的材料来防止或减少溶液中细颗粒的粘附，的细颗粒，其量为10-7至25体积％。

37. 发明授权

US5399202A Resist-peeling liquid and process for peeling a resist using the same 失效
标题翻译：抗剥离液体及使用其的剥离抗蚀剂的方法
公开(公告)号：US5399202A
公开(公告)日：1995-03-21
申请号：US986683
申请日：1992-12-08
申请人： Hiroshi Kikuchi , Yasushi Sano , Satoru Todoroki , Hitoshi Oka , Toshiyuki Koshita , Masato Kikuchi , Mitsuo Nakatani , Michio Tsukii
发明人： Hiroshi Kikuchi , Yasushi Sano , Satoru Todoroki , Hitoshi Oka , Toshiyuki Koshita , Masato Kikuchi , Mitsuo Nakatani , Michio Tsukii
IPC分类号： C23F1/00 , C09D9/00 , C11D7/32 , G02F1/1362 , G03F7/42 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065 , H05K3/06 , B08B3/08 , B08B3/10
CPC分类号： C11D7/3281 , C11D7/3218 , G03F7/425 , G02F1/1362
摘要： A resist is peeled without leaving a residue after peeling, by bringing a resist-peeling liquid comprising a primary aliphatic amine of 2-6 carbon atoms into contact with the surface of an etched novolak positive photoresist, and removing the resist-peeling liquid containing the thus peeled resist from the surface of the etched resist. The used resist-peeling liquid can easily be recovered and regenerated.
摘要翻译：通过使包含2-6个碳原子的脂肪族脂族胺的抗蚀剂剥离液与蚀刻的酚醛清漆型正性光致抗蚀剂的表面接触，除去剥离后的残留物，除去含有从而从蚀刻抗蚀剂的表面剥离抗蚀剂。所使用的抗蚀剂剥离液可以容易地回收和再生。

38. 发明授权

US5348590A Surface treating agent for copper or copper alloys 失效
标题翻译：铜或铜合金表面处理剂
公开(公告)号：US5348590A
公开(公告)日：1994-09-20
申请号：US113705
申请日：1993-08-31
申请人： Seizi Shigemura , Hitoshi Oka , Motokazu Shindo
发明人： Seizi Shigemura , Hitoshi Oka , Motokazu Shindo
IPC分类号： C23C22/05 , B23K35/36 , C23F11/14 , H05K3/28 , B23K35/34
CPC分类号： H05K3/282 , B23K35/3615 , C23F11/149 , H05K2203/0591
摘要： A preflux for a printed circuit board is provided, and the preflux has an excellent heat resistance adapted to a method of surface mounting electronic parts on the printed circuit board, and it is highly operable and reliable. The preflux is comprised mainly of a 2-alkylbenzimidazole derivative having the general formula of ##STR1## wherein R.sup.1 and R.sup.2 may be identical with or different from each other and are hydrogen atom, a lower alkyl group or a halogen atom, and R.sup.3 is an alkyl group of three or more carbon atoms, and contains a chelating agent reacting with copper ions added thereto. Addition of a proper amount of the chelating agent to the preflux makes it easy to form a highly heat-resistant film of the preflux only on copper or copper alloy patterns without masking the printed contacts and joint land. The chelating agent reacts with copper ions and selected from the group consisting of ethylene diamine triacetic acid, diethylene triamine pentaacetic acid, nitrylotriacetic acid, iminodiacetic acid, 1,2-cyclohexanediamine tetraacetic acid and glycolether diamine tetraacetic acid.
摘要翻译：提供了一种用于印刷电路板的预流，并且该预流具有适合于在印刷电路板上表面安装电子部件的方法的优异的耐热性，并且它是高度可操作和可靠的。预通路主要由通式为“IMAGE”的2-烷基苯并咪唑衍生物组成，其中R 1和R 2可以彼此相同或不同，为氢原子，低级烷基或卤原子，R 3为含有3个以上碳原子的烷基，含有与添加了铜离子的螯合剂。向预通量添加适量的螯合剂使得易于仅在铜或铜合金图案上形成预通量的高耐热膜，而不会掩盖印刷触点和接合面。螯合剂与铜离子反应，选自乙二胺三乙酸，二亚乙基三胺五乙酸，硝基三乙酸，亚氨基二乙酸，1,2-环己烷二胺四乙酸和乙二醇四乙酸四乙酸。

39. 发明授权

US4211564A Chemical copper plating solution 失效
标题翻译：化学镀铜溶液
公开(公告)号：US4211564A
公开(公告)日：1980-07-08
申请号：US031160
申请日：1979-04-18
申请人： Hitoshi Oka
发明人： Hitoshi Oka
IPC分类号： C23C18/40 , C23C3/02
CPC分类号： C23C18/405
摘要： An aqueous plating solution consists essentially of a copper ion-releasing compound, a copper ion-complexing agent, a copper ion-reducing agent, a hydroxide of alkali metal, 2,2'-dipyridyl, polyethyleneglycolstearylamine, and silver sulfide has a good liquid stability and a high plating speed, and a chemical copper plating film obtained from the plating solution has a high toughness (tensile strength.times.elongation).
摘要翻译：电镀液基本上由铜离子释放化合物，铜离子络合剂，铜离子还原剂，碱金属氢氧化物，2,2'-二吡啶基，聚乙二醇硬脂基胺和硫化银组成，具有良好的液体稳定性和高电镀速度，并且由电镀液获得的化学镀铜膜具有高韧性（拉伸强度增加）。

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