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    • 35. 发明授权
    • Fused quinazolinones and a process for production thereof
    • 熔融喹唑啉酮及其制备方法
    • US3980645A
    • 1976-09-14
    • US521768
    • 1974-11-07
    • Shigeho InabaMichihiro YamamotoKikuo IshizumiKazuo MoriMasao KoshibaHisao Yamamoto
    • Shigeho InabaMichihiro YamamotoKikuo IshizumiKazuo MoriMasao KoshibaHisao Yamamoto
    • C07D487/04C07D498/04C07D265/00C07D273/00C07D295/00
    • C07D487/04
    • Fused quinazolinone derivatives of the formula, ##SPC1##Wherein R.sub.1 and R.sub.2 are individually hydrogen, C.sub.1.sub.-4 alkyl, C.sub.1.sub.-4 alkoxy, nitro, C.sub.1.sub.-4 alkylsulfonyl or halogen; R.sub.3 is pyridyl, thienyl or a group of the formula ##SPC2##Wherein R.sub. 4 is hydrogen or halogen; R is hydrogen, C.sub.1.sub.-4 alkyl, C.sub.2.sub.-5 alkenyl, aralkyl, (C.sub.3.sub.-6 cycloalkyl)C.sub.1.sub.-4 alkyl, (C.sub.1.sub.-4 alkoxy)C.sub.1.sub.-4 alkyl, (C.sub.1.sub.-4 alkylthio)C.sub.1.sub.-4 alkyl, hydroxy-C.sub.1.sub.-4 alkyl or C.sub.2.sub.-5 alkanoyloxy-C.sub.1.sub.-4 alkyl; Y is oxygen, or a group of the formula N - R.sub.5, wherein R.sub.5 is hydrogen or C.sub.1.sub.-4 alkyl; and Z is C.sub.2.sub.-5 alkylene or alkenylene, are prepared by reacting a trihaloacetamidophenyl ketone derivative of the formula, ##SPC3##Wherein R.sub.1, R.sub.2, R.sub. 3 and R are as defined above; and X.sub.1, X.sub.2 and X.sub.3 are halogen, with an amine of the formula, HY - Z - NH.sub.2, wherein Y and Z are as defined above, or a salt thereof, in the presence of a solvent or a mixture thereof. They have remarkable pharmacological properties such as anti-inflammatory, analgesic and/or uricosuric activities.
    • 下式的稠合喹唑啉酮衍生物WHEREIN R1和R2分别为氢,C1-4烷基,C1-4烷氧基,硝基,C1-4烷基磺酰基或卤素; R 3是吡啶基,噻吩基或式WHEREIN R 4是氢或卤素的基团; R为氢,C 1-4烷基,C 2-5烯基,芳烷基,(C 3-6环烷基)C 1-4烷基,(C 1-4烷氧基)C 1-4烷基,(C 1-4烷硫基)C 1-4烷基,羟基 C 1-4烷基或C 2-5烷酰氧基-C 1-4烷基; Y为氧,或式为N-R5的基团,其中R5为氢或C1-4烷基; Z是C2-5亚烷基或亚烯基,是通过下式的三卤代乙酰胺基苯基酮衍生物WHEREIN R1,R2,R3和R如上所定义而制备的; 并且X 1,X 2和X 3是卤素,在溶剂或其混合物的存在下,与下式的胺HY-Z-NH 2(其中Y和Z如上定义)或其盐。 它们具有显着的药理学性质,如抗炎,镇痛和/或尿酸活性。
    • 39. 发明授权
    • Jig for heat treatment and process for fabricating the jig
    • 用于热处理的夹具和用于制造夹具的工艺
    • US5882807A
    • 1999-03-16
    • US770239
    • 1996-12-20
    • Yoshio FunatoKoji FurukawaHisao YamamotoNobuo Kageyama
    • Yoshio FunatoKoji FurukawaHisao YamamotoNobuo Kageyama
    • C04B41/52C04B41/89C23C16/32H01L21/00C04B35/56
    • H01L21/67115C04B41/009C04B41/52C04B41/89C23C16/325C04B2111/0025Y10T428/265
    • A jig used for heat treatment made from an SiC-coated silicon carbide material, wherein the SiC film is coated by the CVD method on a silicon carbide matrix in which silicon has been impregnated and wherein there are no pores with a diameter of 2 .mu.m or larger in the outer layer of the matrix within 200 .mu.m from the interface of the SiC film and the silicon carbide matrix when observed by a scanning electron microscope at a magnification of 400 times. The jig is manufactured by producing an SiC film on the surface of a silicon carbide matrix in which silicon has been impregnated by introducing a raw material compound for producing the SiC film and forming the SiC film at a temperature from 1000.degree. C. to 1290.degree. C. under a pressure from 500 to 760 Torr in a non-oxidative atmosphere. The jig exhibits superior resistance to high temperature heating cycles and excellent high thermal shock resistance required for heat treatment in semiconductor manufacturing.
    • 用于由SiC涂覆的碳化硅材料制成的热处理的夹具,其中通过CVD方法将SiC膜涂覆在已经浸渍了硅的碳化硅基体上,并且其中没有直径为2μm的孔 或者当通过扫描电子显微镜以400倍的倍数观察时,从SiC膜和碳化硅基体的界面在200μm以内的基体的外层中,或者更大。 通过在碳化硅基体的表面上制造SiC膜来制造夹具,其中通过引入用于制造SiC膜的原料化合物并在1000℃至1290℃的温度下形成SiC膜来浸渍硅。 在非氧化性气氛下,在500至760托的压力下。 夹具具有优异的耐高温加热循环性能以及半导体制造中热处理所需的优异的耐热冲击性。