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    • 39. 发明授权
    • Solid state imaging device
    • 固态成像装置
    • US08841714B2
    • 2014-09-23
    • US13979172
    • 2011-11-11
    • Tomohiro IkeyaYasuhito YonetaHisanori SuzukiMasaharu Muramatsu
    • Tomohiro IkeyaYasuhito YonetaHisanori SuzukiMasaharu Muramatsu
    • H01L31/02H01L27/148H04N5/372H01L27/146
    • H01L27/14806H01L27/14601H01L27/14825H01L27/14831H04N5/37213
    • A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having a plurality of photosensitive regions 7, and a potential gradient forming portion 3 having an electroconductive member 8 arranged opposite to the photosensitive regions 7. A planar shape of each photosensitive region 7 is a substantially rectangular shape. The photosensitive regions 7 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 forms a potential gradient becoming higher along a second direction from one of the short sides to the other of the short sides of the photosensitive regions 7. The electroconductive member 8 includes a first region 8a extending in the second direction and having a first electric resistivity, and a second region 8b extending in the second direction and having a second electric resistivity smaller than the first electric resistivity.
    • 固态成像装置1具有具有多个感光区域7的光电转换部分2和具有与感光区域7相对布置的导电部件8的电位梯度形成部分3.每个光敏区域7的平面形状 是大致矩形的形状。 感光区域7在与长边相交的第一方向上并列。 电位梯度形成部分3形成沿着从感光区域7的短边中的一个短边到另一个的第二方向变得更高的电位梯度。导电部件8包括沿第二方向延伸的第一区域8a和 具有第一电阻率,第二区域8b沿第二方向延伸并具有小于第一电阻率的第二电阻率。