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31. 发明授权

US07200506B2 Method for failure analysis and system for failure analysis 有权
公开(公告)号：US07200506B2
公开(公告)日：2007-04-03
申请号：US10339356
申请日：2003-01-10
申请人： Satoshi Tomimatsu , Hiroyasu Shichi , Muneyuki Fukuda , Kaoru Umemura
发明人： Satoshi Tomimatsu , Hiroyasu Shichi , Muneyuki Fukuda , Kaoru Umemura
IPC分类号： G01N37/00
CPC分类号： G05B23/0264 , H01J2237/208
摘要： After completion of an arbitrary device process, an apparatus for micro-sample extraction extracts a part of a wafer as a micro-sample of a size equal to or larger than a repetition pattern with a probe and places the extracted micro-sample to a micro-sample storage, and the micro-sample storage is stored into an apparatus for micro-sample storage. The wafer is subjected to a post process and an observation desired position is determined in response to a failure analysis requirement. After that, the micro-sample is unloaded from the micro-sample storage by an apparatus for additional processing of the micro-sample and is placed onto an observation sample holder. By performing an additional process in the observation desired position, a failure analysis sample is prepared, and analysis information obtained by an apparatus for failure analysis is output.

32. 发明申请

US20060284112A1 Apparatus and method for specimen fabrication 有权
公开(公告)号：US20060284112A1
公开(公告)日：2006-12-21
申请号：US11441016
申请日：2006-05-26
申请人： Satoshi Tomimatsu , Miyuki Takahashi , Hiroyasu Shichi , Muneyuki Fukuda
发明人： Satoshi Tomimatsu , Miyuki Takahashi , Hiroyasu Shichi , Muneyuki Fukuda
IPC分类号： G21G5/00
CPC分类号： H01J37/3056 , H01J2237/006 , H01J2237/31744 , H01J2237/31745
摘要： A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.

33. 发明申请

US20060065854A1 Ion beam system and machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US20060065854A1
公开(公告)日：2006-03-30
申请号：US11210732
申请日：2005-08-25
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： H01J37/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
摘要翻译：存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。

34. 发明授权

US06977376B2 Method of prevention charging, and apparatus for charged particle beam using the same 有权
标题翻译：防止充电的方法，以及使用其的带电粒子束的装置
公开(公告)号：US06977376B2
公开(公告)日：2005-12-20
申请号：US10773330
申请日：2004-02-09
申请人： Muneyuki Fukuda , Hiroyasu Shichi , Satoshi Tomimatsu
发明人： Muneyuki Fukuda , Hiroyasu Shichi , Satoshi Tomimatsu
IPC分类号： G01N23/225 , G01Q10/00 , G01Q30/02 , G01Q30/20 , H01J37/02 , H01J37/20 , H01J37/28 , H01J37/305 , H01L21/66 , G01N23/00 , H01S1/00
CPC分类号： H01J37/28 , G01N23/225 , H01J37/026 , H01J37/3056
摘要： An apparatus for a charged particle beam has a charged particle source; a charged particle optical system for focusing and deflecting a charged particle beam emitted from the charged particle source; a detector for detecting secondary particles emitted from a sample irradiated with the charged particle beam; and a sample holder on which the sample is mounted. The apparatus has an electrode for preventing charging which is provided so as to be movable with respect to the surface of the sample holder, and a controller for the electrode for preventing charging, which controls a voltage to be applied to the electrode for preventing charging and the movement. Preventing the charging is performed by generating an induced current or a current between an area irradiated with the charged particle beam in the sample and the electrode for preventing charging.
摘要翻译：带电粒子束的装置具有带电粒子源; 用于聚焦和偏转从带电粒子源发射的带电粒子束的带电粒子光学系统; 用于检测从被照射的带电粒子束的样品发射的二次粒子的检测器; 和其上安装有样品的样品架。该装置具有用于防止充电的电极，其被设置为能够相对于样品保持器的表面移动，以及用于防止充电的电极的控制器，其控制施加到用于防止充电的电极的电压，以及运动。通过在样品中用带电粒子束照射的区域和用于防止充电的电极之间产生感应电流或电流来进行充电。

35. 发明授权

US08481980B2 Ion source, ion beam processing/observation apparatus, charged particle beam apparatus, and method for observing cross section of sample 有权
标题翻译：离子源，离子束处理/观察装置，带电粒子束装置和观察样品截面的方法
公开(公告)号：US08481980B2
公开(公告)日：2013-07-09
申请号：US12108037
申请日：2008-04-23
申请人： Hiroyasu Shichi , Satoshi Tomimatsu , Kaoru Umemura , Noriyuki Kaneoka , Koji Ishiguro
发明人： Hiroyasu Shichi , Satoshi Tomimatsu , Kaoru Umemura , Noriyuki Kaneoka , Koji Ishiguro
IPC分类号： G21K5/10
CPC分类号： C23C14/3442 , H01J27/10 , H01J37/08 , H01J37/28 , H01J37/3023 , H01J37/3056 , H01J2237/006 , H01J2237/057 , H01J2237/0807 , H01J2237/0825 , H01J2237/0827 , H01J2237/31745 , H01J2237/31749
摘要： An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.
摘要翻译：一种与电子部件的横截面观察技术有关的离子束加工和观察方法，通过使用离子束加工样品的电子部件和能够减少填充加工孔的时间的带电粒子束处理器在填充区域具有高度的平整度。观察装置能够切换用于用于观察样品的气体离子束的种类来加工样品的气体离子束的种类。为了实现用于样品加工的气体离子束的种类和用于样品观察的气体离子束的种类之间的切换，使用至少两个气体导入系统，每个系统具有气瓶，气体管，气体音量控制阀和截止阀。

36. 发明授权

US07888639B2 Method and apparatus for processing a micro sample 有权
标题翻译：用于处理微量样品的方法和设备
公开(公告)号：US07888639B2
公开(公告)日：2011-02-15
申请号：US11980654
申请日：2007-10-31
申请人： Mitsuo Tokuda , Muneyuki Fukuda , Yasuhiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , Hideo Kashima , Kaoru Umemura
发明人： Mitsuo Tokuda , Muneyuki Fukuda , Yasuhiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , Hideo Kashima , Kaoru Umemura
IPC分类号： G01N23/00
CPC分类号： H04L29/06 , G01N23/225 , H01J37/256 , H01J37/3056 , H01J2237/20 , H01J2237/202 , H01J2237/31745 , H04L67/16 , H04L69/329
摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
摘要翻译：本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片。在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。

37. 发明授权

US07700931B2 Ion beam processing apparatus 有权
标题翻译：离子束处理装置
公开(公告)号：US07700931B2
公开(公告)日：2010-04-20
申请号：US11674262
申请日：2007-02-13
申请人： Hiroyasu Shichi , Satoshi Tomimatsu , Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
发明人： Hiroyasu Shichi , Satoshi Tomimatsu , Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
IPC分类号： G21K5/10 , H01J37/08 , A61N5/00 , G21G5/00 , G21K7/00 , G01N23/00
CPC分类号： H01J37/261 , H01J37/20 , H01J37/3045 , H01J2237/08 , H01J2237/20207 , H01J2237/24528 , H01J2237/28 , H01J2237/31713 , H01J2237/3174 , H01J2237/31749
摘要： The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage. The ion beam processing apparatus is structured so that a segment drawn by projecting the axis, along which the ion beam is drawn out of the ion source, on a plane perpendicular to the ion beam irradiation axis can be at least substantially parallel to a segment drawn by projecting the tilting axis of the second sample stage on the plane perpendicular to the ion beam irradiation axis.
摘要翻译：本发明提供了一种离子束处理技术，用于提高使用离子束处理样品的一部分的精度，而不需要比常规所需的处理时间长的处理时间，并且缩短了分离微测试件所需的时间，而没有打破样品或准备分离所需的时间。离子束处理装置被构造成使得离子束从离子源拉出的轴和离子束照射到安装在第一样品台上的样品的离子束照射轴将以一定角度相遇。此外，离子束处理装置具有通过旋转第二样品台而使离子束照射到样品上的照射角度的倾斜能力，通过进行离子束处理从样品中提取试验片围绕第二样品台的倾斜轴安装。离子束处理装置被构造成使得通过将离子束从离子源拉出的轴在垂直于离子束照射轴线的平面上突出的拉伸而绘制的区段可以至少基本上平行于拉伸的区段通过将第二样品台的倾斜轴投影在垂直于离子束照射轴的平面上。

38. 发明授权

US07482603B2 Apparatus and method for specimen fabrication 有权
标题翻译：用于样品制造的装置和方法
公开(公告)号：US07482603B2
公开(公告)日：2009-01-27
申请号：US11441016
申请日：2006-05-26
申请人： Satoshi Tomimatsu , Miyuki Takahashi , Hiroyasu Shichi , Muneyuki Fukuda
发明人： Satoshi Tomimatsu , Miyuki Takahashi , Hiroyasu Shichi , Muneyuki Fukuda
IPC分类号： G21G5/00
CPC分类号： H01J37/3056 , H01J2237/006 , H01J2237/31744 , H01J2237/31745
摘要： A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.
摘要翻译：试样制造装置包括：样品台，放置试样; 带电粒子束光学系统，用于将带电粒子束照射在样本上; 供给来源的蚀刻剂材料在其分子中含有氟和碳的蚀刻剂材料，其分子中不含氧，在标准状态下为固体或液体; 以及在其中容纳样品台的真空室。试样制造方法包括以下步骤：通过照射带电粒子束来处理试样的要求区域附近的孔; 通过照射带电粒子束使被请求区域曝光; 在其分子中供给含有氟和碳的蚀刻剂材料在其分子中不含氧，并且在标准状态下为固体或液体，暴露于所要求的区域; 以及将所述带电粒子束照射在被请求区域上。

39. 发明申请

US20080135779A1 Ion Beam System And Machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US20080135779A1
公开(公告)日：2008-06-12
申请号：US12020150
申请日：2008-01-25
申请人： Hiroyasu SHICHI , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu SHICHI , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： G21K5/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： An ion beam system includes a sample stage which holds a sample, an irradiation optical system which irradiates a sample held on the sample stage by an ion beam, and a charged particle beam observation system for observing a cross-section of the sample which is machined by the ion beam. The charged particle beam observation system includes a structure in which an axis along with an ion beam is extracted from the ion source and an axis along which the sample is irradiated are arranged so as to be at least transverse to one another.
摘要翻译：离子束系统包括保持样品的样品台，通过离子束照射保持在样品台上的样品的照射光学系统和用于观察被加工的样品的横截面的带电粒子束观察系统通过离子束。带电粒子束观测系统包括其中从离子源提取轴和离子束的结构，并且将照射样品的轴布置成至少彼此横向。

40. 发明授权

US07205554B2 Method and apparatus for processing a micro sample 有权
公开(公告)号：US07205554B2
公开(公告)日：2007-04-17
申请号：US11127213
申请日：2005-05-12
申请人： Mitsuo Tokuda , Muneyuki Fukuda , Yasuhiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , Hideo Kashima , Kaoru Umemura
发明人： Mitsuo Tokuda , Muneyuki Fukuda , Yasuhiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , Hideo Kashima , Kaoru Umemura
IPC分类号： H01J37/256 , G21N23/225
CPC分类号： H04L29/06 , G01N23/225 , H01J37/256 , H01J37/3056 , H01J2237/20 , H01J2237/202 , H01J2237/31745 , H04L67/16 , H04L69/329
摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

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