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    • 33. 发明授权
    • Display device
    • 显示设备
    • US08168978B2
    • 2012-05-01
    • US12757169
    • 2010-04-09
    • Hideki Nakagawa
    • Hideki Nakagawa
    • H01L33/00
    • H01L29/78696H01L29/04H01L29/42384H01L29/4908
    • The present invention provides a display device where thin film transistors are formed on a substrate on which an image display portion is formed, wherein the thin film transistors comprise: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor layer in island form which is formed on the gate insulating film so as to overlap with the gate electrode; and a pair of electrodes formed on the semiconductor layer so as to face each other, and the semiconductor layer is provided within a region where the gate electrode is formed as viewed in a plane, and formed of a crystal semiconductor layer and an amorphous semiconductor layer, which are layered in sequence on the gate electrode side, characterized in that the gate electrode is formed so as to have such a film thickness that the light transmittance is 0.3% or less at least in the region facing the semiconductor layer.
    • 本发明提供一种显示装置,其中薄膜晶体管形成在其上形成有图像显示部分的基板上,其中薄膜晶体管包括:栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在栅极绝缘膜上以与栅电极重叠的岛状半导体层; 以及在半导体层上形成为彼此面对的一对电极,并且半导体层设置在从平面观察形成栅电极的区域内,并且由半导体层和非晶半导体层形成 ,其在栅电极侧依次层叠,其特征在于,所述栅电极形成为具有至少在面向所述半导体层的区域中的透光率为0.3%以下的膜厚。