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    • 32. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07580307B2
    • 2009-08-25
    • US11773152
    • 2007-07-03
    • Toru Ishikawa
    • Toru Ishikawa
    • G11C7/00
    • G11C11/406G11C2211/4061
    • An apparatus a counter, storage units for storing count values interrupted by a row address whose refresh period is subject to change; comparator circuits for comparing the counter outputs and the contents of the storage units to each other as to whether or not the counter outputs coincide with the contents of the storage units; a holding circuit for setting an output hit signal to an active state when a coincidence signal is output from the comparator circuits and for resetting the hit signal to an inactive state in the next following clock cycle; a circuit performing control for not propagating a refresh clock signal to the counter when the hit signal is in an active state and for propagating the refresh clock signal to the counter when the hit signal is in an inactive state; a circuit for replacing an output of the counter by a row address which changes part of the counter output when the hit signal is in an activate state to replace the counter output with the row address whose refresh period is subject to change to output the row address whose refresh period is subject to change as a refresh address.
    • 一种计数器装置,用于存储由刷新周期变化的行地址中断的计数值的存储单元; 比较电路,用于将计数器输出和存储单元的内容彼此比较,以便计数器输出是否与存储单元的内容一致; 保持电路,用于当从比较器电路输出一致信号时将输出命中信号设置为有效状态,并在下一个后续时钟周期将命中信号复位为无效状态; 执行控制,用于当所述命中信号处于活动状态时不向所述计数器传播刷新时钟信号,并且当所述命中信号处于非活动状态时将所述刷新时钟信号传播到所述计数器; 一个电路,用于当命中信号处于激活状态时改变计数器输出的一部分的行地址替换计数器的输出,以用刷新周期改变的行地址替换计数器输出以输出行地址 刷新周期可能会随刷新地址而变化。
    • 33. 发明授权
    • Temperature detection circuit
    • 温度检测电路
    • US07502710B2
    • 2009-03-10
    • US11709191
    • 2007-02-22
    • Toru Ishikawa
    • Toru Ishikawa
    • G01K11/00G01K7/00
    • G01K3/005G01K7/01
    • First and second reference-potential generator units output first and second reference potentials V1 and V7, respectively, which correspond to first and second specific temperatures to be detected. An intermediate-potentials generator unit divides the potential difference between the reference potential V1 and the reference potential V7 to output intermediate potentials through nodes N2 to N6. A temperature-dependant-potential generator unit outputs the forward voltage drop of a diode which varies depending on the ambient temperature. A comparator compares one of the potentials of nodes N1 to N7 selected by a selector against the potential output by the temperature-dependant-potential generator unit and outputs the result of the comparison indicating the range of the ambient temperature.
    • 第一和第二参考电位发生器单元分别输出与要检测的第一和第二特定温度相对应的第一和第二参考电位V1和V7。 中间电位发生器单元将参考电位V1和参考电位V7之间的电位差除以通过节点N2至N6输出中间电位。 温度依赖电位发生器单元输出二极管的正向压降,这取决于环境温度而变化。 比较器将由选择器选择的节点N1至N7的电位中的一个与温度依赖电位发生器单元的电位输出进行比较,并输出表示环境温度范围的比较结果。
    • 35. 发明申请
    • Semiconductor memory device
    • 半导体存储器件
    • US20060198207A1
    • 2006-09-07
    • US11365857
    • 2006-03-02
    • Toru Ishikawa
    • Toru Ishikawa
    • G11C7/10
    • G11C11/406G11C2211/4061
    • Disclosed is an apparatus a counter, storage units for storing count values interrupted by a row address whose refresh period is subject to change; comparator circuits for comparing the counter outputs and the contents of the storage units to each other as to whether or not the counter outputs coincide with the contents of the storage units; a holding circuit for setting an output hit signal to an active state when a coincidence signal is output from the comparator circuits and for resetting the hit signal to an inactive state in the next following clock cycle; a circuit performing control for not propagating a refresh clock signal to the counter when the hit signal is in an active state and for propagating the refresh clock signal to the counter when the hit signal is in an inactive state; a circuit for replacing an output of the counter by a row address which changes part of the counter output when the hit signal is in an activate state to replace the counter output with the row address whose refresh period is subject to change to output the row address whose refresh period is subject to change as a refresh address.
    • 公开了一种计数器的装置,用于存储由刷新周期变化的行地址中断的计数值的存储单元; 比较电路,用于将计数器输出和存储单元的内容彼此比较,以便计数器输出是否与存储单元的内容一致; 保持电路,用于当从比较器电路输出一致信号时将输出命中信号设置为有效状态,并在下一个后续时钟周期将命中信号复位为无效状态; 执行控制,用于当所述命中信号处于活动状态时不向所述计数器传播刷新时钟信号,并且当所述命中信号处于非活动状态时将所述刷新时钟信号传播到所述计数器; 一个电路,用于当命中信号处于激活状态时改变计数器输出的一部分的行地址替换计数器的输出,以用刷新周期改变的行地址替换计数器输出以输出行地址 刷新周期可能会随刷新地址而变化。
    • 36. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20060125541A1
    • 2006-06-15
    • US11296287
    • 2005-12-08
    • Toru IshikawaKunihiko Katou
    • Toru IshikawaKunihiko Katou
    • G06F1/04
    • G11C7/1078G11C7/1087
    • To stably operate a semiconductor device comprising a plurality of input circuits which are connected to one external input terminal. Input circuits 10, 11, 12, 13 connected to an external input terminal PAD via resistor elements R1, R2, R3, R4, respectively, are activated in response to the level transition of the clock signals CK10, CK11, CK12, CK13 supplied thereto for accepting input signals. In order to input signals applied to the external input terminal PAD clock signals having different phases are supplied to the respective input circuits. The cycle time of each one input circuit can be made longer by sequentially assigning the serial data supplied to the external input terminals in response to the clock signals having different clock signals. Since the input circuits are isolated from each other by means of the resistor elements R1, R2, R3, R4, the influence of the kick back signal which occurs at first stage of each the input circuit upon the other input circuit can be made very small.
    • 为了稳定地操作包括连接到一个外部输入端子的多个输入电路的半导体器件。 分别经由电阻元件R 1,R 2,R 3,R 4连接到外部输入端子PAD的输入电路10,11,12,13响应于时钟信号CK10,CK11的电平转换而被激活 ,CK12,CK13,供接收输入信号。 为了输入施加到外部输入端子的信号,将具有不同相位的时钟信号提供给各个输入电路。 通过响应于具有不同时钟信号的时钟信号顺序分配提供给外部输入端的串行数据,可以使每个输入电路的周期时间更长。 由于输入电路通过电阻元件R 1,R 2,R 3,R 4彼此隔离,所以在每个输入电路的第一级发生的反冲信号对另一输入电路的影响可以 做得很小
    • 39. 发明授权
    • Semiconductor storage device
    • 半导体存储设备
    • US06392951B2
    • 2002-05-21
    • US09813684
    • 2001-03-20
    • Shiro FujimaToru Ishikawa
    • Shiro FujimaToru Ishikawa
    • G11C800
    • G11C5/147G11C7/06G11C8/12
    • A semiconductor storage device (100) is disclosed that includes sense amplifier rows (SA0 to SA16) that receive a common sense amplifier drive voltage VINTA supplied by a internal voltage driver (5) having a high current source mode. According to one embodiment, the semiconductor storage device (100) may include banks of memory cells (B0 to B15), row decoders (DC0 to DC15), bank enable generation circuits (EC0 to EC15), sense amplifier rows (SA0 to SA16), sense amplifier drivers (DRA0 to DRA16), sense amplifier control circuits (SCA0 to SCA16), and internal voltage drivers (5 and 6). Internal voltage driver (5) can include a high current source or high voltage source mode, which can be received by a sense amplifier row (SA0 to SA16) during predetermined initial sense period. Other sense amplifier rows (SA0 to SA16) having already sensed data can be isolated from internal voltage driver (5) during the high current source or high voltage source mode.
    • 公开了一种半导体存储装置(100),其包括接收由具有高电流源模式的内部电压驱动器(5)提供的公共感测放大器驱动电压VINTA的读出放大器行(SA0至SA16)。 根据一个实施例,半导体存储装置(100)可以包括存储单元组(B0至B15),行解码器(DC0至DC15),组使能生成电路(EC0至EC15),读出放大器行(SA0至SA16) ,读出放大器驱动器(DRA0至DRA16),读出放大器控制电路(SCA0至SCA16)和内部电压驱动器(5和6)。 内部电压驱动器(5)可以包括高电流源或高电压源模式,其可以在预定的初始感测周期期间由读出放大器行(SA0至SA16)接收。 已经感测到的数据的其他读出放大器行(SA0至SA16)可以在高电流源或高电压源模式期间与内部电压驱动器(5)隔离。