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31. 发明授权

US5617476A Audio scrambling system for scrambling and descrambling audio signals 失效
标题翻译：用于加扰和解扰音频信号的音频加扰系统
公开(公告)号：US5617476A
公开(公告)日：1997-04-01
申请号：US321766
申请日：1994-10-12
申请人： Susumu Ibaraki , Noboru Katta , Seiji Nakamura , Hiroki Murakami
发明人： Susumu Ibaraki , Noboru Katta , Seiji Nakamura , Hiroki Murakami
IPC分类号： H04K1/02 , H04L9/00 , H04N7/117
CPC分类号： H04K1/02
摘要： A scrambling system has a scrambling apparatus and a descrambling apparatus for scrambling and descrambling a digital audio signal having a plurality of 16-bit long sample data units. The scrambling apparatus has a detector for detecting, in each sample data unit, a meaningless portion which is a portion including the MSB and a meaningful portion which is a portion including the LSB, and applying scrambling only to the meaningful portion. Since the meaningless portion is not scrambled, no error data will appear in the meaningless portion. Thus, an unexpected abrupt change in sound caused by a bit error in the meaningless portion which has bits with greater weighted value can be avoided.
摘要翻译：加扰系统具有用于对具有多个16位长采样数据单元的数字音频信号进行加扰和解扰的加扰装置和解扰装置。加扰装置具有检测器，用于在每个采样数据单元中检测作为包括MSB的部分的无意义部分和作为包括LSB的部分的有意义部分，并将加扰应用于有意义的部分。由于无意义部分不加扰，所以在无意义部分中不会出现错误数据。因此，可以避免由具有较大加权值的位的无意义部分中的位错误引起的声音的意外突然变化。

32. 发明授权

US5479070A Light-emitting element device 失效
标题翻译：发光元件装置
公开(公告)号：US5479070A
公开(公告)日：1995-12-26
申请号：US80587
申请日：1993-06-24
申请人： Hiroki Murakami
发明人： Hiroki Murakami
IPC分类号： H05B33/10 , H05B33/14 , H05B33/26 , H01J1/66
CPC分类号： H05B33/145 , H05B33/10 , H05B33/26
摘要： An EL light-emitting element device of a thick-film type and a method of manufacturing such device which is applicable to an image reading device integrally forming a light-emitting element and a light-receiving element, and to provide an image reading device using such an EL light-emitting element device of a thick-film type. In which the light-emitting elements are formed by depositing a light-emitting layer by a thick-film process. Therefore, a light-emitting element device and an image reading device using such a light-emitting element device can be fabricated inexpensively.
摘要翻译：一种厚膜型的EL发光元件装置及其制造方法，可应用于整体形成发光元件和受光元件的图像读取装置，并且提供使用了图像读取装置的图像读取装置这种厚膜型的EL发光元件装置。其中通过用厚膜工艺沉积发光层来形成发光元件。因此，可以廉价地制造使用这种发光元件装置的发光元件装置和图像读取装置。

33. 发明授权

US4767936A Electronic device of element row type and wiring method of its electrode pattern 失效
标题翻译：元件行类型的电子器件及其电极图案的布线方法
公开(公告)号：US4767936A
公开(公告)日：1988-08-30
申请号：US884805
申请日：1986-07-11
申请人： Hiroki Murakami , Takashi Ozawa
发明人： Hiroki Murakami , Takashi Ozawa
IPC分类号： H01L27/146 , B41J2/355 , H04N1/032 , H04N1/193 , H05K3/46 , H01J40/14
CPC分类号： H04N1/1931
摘要： An electronic device of the element row type, and a wiring method of its electrode pattern, is characterized by the disposition of a plurality of the elements being arranged in a longitudinal array which is divided into a plurality of blocks. A pair of driver devices are employed to drive the elements, and wiring patterns interconnect the elements to the driver devices. In accordance with the present invention, the wiring patterns include first portions which extend in a direction perpendicular to the longitudinal extent of the element array, and second portions which extend parallel to the longitudinal extent of the element array, with the parallel portions defining substantially the same width dimension regions, and wherein further, such width regions are overlapped with respect to each other such that the overall width of the wiring pattern for the electronic device may be substantially reduced as compared to those of prior art devices whereby miniaturization of the electronic device may be achieved.
摘要翻译：元件行类型的电子器件及其电极图案的布线方法的特征在于，将多个元件布置成纵向阵列，其被分成多个块。采用一对驱动器件驱动元件，并且布线图案将元件互连到驱动器器件。根据本发明，布线图案包括在垂直于元件阵列的纵向延伸的方向上延伸的第一部分和平行于元件阵列的纵向延伸的第二部分，平行部分基本上限定相同的宽度尺寸区域，并且其中，这样的宽度区域相对于彼此重叠，使得与现有技术设备相比，用于电子设备的布线图案的总宽度可以显着减小，由此电子设备的小型化可以实现。

34. 发明申请

US20150226106A1 EXHAUST MANIFOLD MOUNTING STRUCTURE FOR INTERNAL COMBUSTION ENGINE 有权
标题翻译：用于内燃机的排气管安装结构
公开(公告)号：US20150226106A1
公开(公告)日：2015-08-13
申请号：US14432272
申请日：2013-10-11
申请人： Hiroki MURAKAMI
发明人： Hiroki Murakami
IPC分类号： F01N13/18 , F01N13/10
CPC分类号： F01N13/1805 , F01N13/10 , F01N13/1822 , F01N13/1827 , F01N2450/24 , F02F11/002
摘要： A cross recess is provided at a fastening seat portion of a cylinder head in which exhaust port outlets are arranged in two rows and two in each row. A cross protrusion that is fittable to the cross recess is provided at a flange of an exhaust manifold. A gasket has a cross opening through which the cross protrusion is insertable. The exhaust manifold is fastened to the cylinder head by passing the cross protrusion of the flange of the exhaust manifold through the cross opening of the gasket and then fitting the cross protrusion to the cross recess of the fastening seat portion of the cylinder head.
摘要翻译：在气缸盖的紧固座部设有十字凹槽，排气口排列排列成排两排，每排两排。在排气歧管的凸缘处设置可配合到十字槽的十字突起。垫圈具有十字开口，十字突起可以穿过该十字开口。排气歧管通过使排气歧管的凸缘的十字突出部通过垫圈的十字开口而紧固到气缸盖上，然后将十字突出部配合到气缸盖的紧固座部分的十字槽中。

35. 发明授权

US08431494B2 Film formation method and film formation apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US08431494B2
公开(公告)日：2013-04-30
申请号：US13164280
申请日：2011-06-20
申请人： Hiroki Murakami , Kazuhide Hasebe , Kazuya Yamamoto , Toshihiko Takahashi , Daisuke Suzuki
发明人： Hiroki Murakami , Kazuhide Hasebe , Kazuya Yamamoto , Toshihiko Takahashi , Daisuke Suzuki
IPC分类号： H01L21/469 , H01L21/316
CPC分类号： C23C16/401 , C23C16/45523
摘要： A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.
摘要翻译：在处理室中的待处理物体的表面上形成氧化硅膜的成膜方法包括通过将种子气体供给到待处理物体的表面上来吸收包含硅烷类气体的种子气体处理室，通过将作为原料气体的含硅气体和含有该杂质的添加气体供给到处理室中，形成具有杂质的硅膜，氧化硅膜，将硅膜转换成氧化硅膜。因此，在待处理物体的表面上形成具有高密度和高应力的氧化硅膜。

36. 发明授权

US08344895B2 Photoelectric sensor and photoelectric sensor system 有权
标题翻译：光电传感器和光电传感器系统
公开(公告)号：US08344895B2
公开(公告)日：2013-01-01
申请号：US12818294
申请日：2010-06-18
申请人： Toyoichi Uozumi , Hiroki Murakami
发明人： Toyoichi Uozumi , Hiroki Murakami
IPC分类号： G08B17/12
CPC分类号： G01V8/12
摘要： There are provided a photoelectric sensor and a photoelectric sensor system in which received light quantities of a plurality of photoelectric sensors are displayed in an integrated manner, and slight variation in the received light quantity that has nothing to do with a detected condition of a workpiece is ignored and a photoelectric sensor with abnormity is easily found out. Upon acceptance of an instruction to execute scaled display by a control unit of a photoelectric sensor, a scaling adjustment ratio is calculated by assigning the received light quantity to a target value set to be greater than a display upper limit while executing the scaled display. A received light quantity that is subsequently obtained is scaled based on the calculated scaling adjustment ratio to obtain a received light quantity after the scaling.
摘要翻译：提供了一种光电传感器和光电传感器系统，其中综合地显示多个光电传感器的接收光量，并且与检测到的工件无关的接收光量的轻微变化是被忽略，容易发现异常的光电传感器。在接受光电传感器的控制单元执行缩放显示的指令时，通过将接收到的光量分配给设定为大于显示上限的目标值，同时执行缩放显示来计算缩放调整率。随后获得的接收光量基于所计算的缩放调整比例被缩放以获得缩放之后的接收光量。

37. 发明授权

US08166443B2 Method of shield line placement for semiconductor integrated circuit, design apparatus for semiconductor integrated circuit, and design program for semiconductor integrated circuit 有权
标题翻译：半导体集成电路屏蔽线放置方法，半导体集成电路设计装置及半导体集成电路设计程序
公开(公告)号：US08166443B2
公开(公告)日：2012-04-24
申请号：US12216377
申请日：2008-07-02
申请人： Katsushi Aoki , Takahiro Toda , Junya Yamasaki , Shinichi Iida , Hiroki Murakami
发明人： Katsushi Aoki , Takahiro Toda , Junya Yamasaki , Shinichi Iida , Hiroki Murakami
IPC分类号： G06F17/50
CPC分类号： G06F17/5077 , H01L23/5225 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit design apparatus includes: an association information creating unit which creates association information for associating wiring information of a signal line with wiring information of a shield line placed for the signal line; an association information storage unit which stores the thus created association information; and a shield wiring unit which, when the placement of the signal line is changed, changes in interlinking fashion with the changed placement the placement of the shield line that is associated with the signal line by the association information.
摘要翻译：一种半导体集成电路设计装置，包括：关联信息创建单元，其创建用于将信号线的布线信息与放置在信号线上的屏蔽线的布线信息相关联的关联信息; 存储由此创建的关联信息的关联信息存储单元; 以及屏蔽布线单元，当信号线的布置改变时，通过关联信息，与信号线相关联的屏蔽线的布置与改变的布置相互连接地改变。

38. 发明授权

US07903473B2 Semiconductor device and control method of the same 有权
公开(公告)号：US07903473B2
公开(公告)日：2011-03-08
申请号：US12508319
申请日：2009-07-23
申请人： Hiroki Murakami , Kazuhiro Kurihara
发明人： Hiroki Murakami , Kazuhiro Kurihara
IPC分类号： G11C16/04
CPC分类号： G11C11/413 , G11C16/102 , G11C16/105
摘要： A semiconductor device includes: a first sector (12) having data that are all to be erased and having flash memory cells; a second sector (14) having data that are all to be retained and having flash memory cells; a sector select circuit (16) selecting a pair of sectors from among sectors during erasing the data in the first sector, said pair of sectors being the first sector and the second sector; and an SRAM array (storage) (30) retaining the data of the second sector. The present invention can provide a semiconductor device in which a reduced number of sector select circuits is used so that the area of memory cell array can be reduced and provide a method of controlling the semiconductor device.

39. 发明申请

US20100199716A1 GAS-LIQUID SEPARATOR AND AIR CONDITIONER EQUIPPED WITH THE SAME 有权
标题翻译：气液分离器和与此相同的空调机
公开(公告)号：US20100199716A1
公开(公告)日：2010-08-12
申请号：US12666313
申请日：2008-06-16
申请人： Hiroki Murakami , Hironori Nagai , Tadashi Saito , Hiroaki Makino , Yasuhide Hayamaru , Kazuhide Yamamoto
发明人： Hiroki Murakami , Hironori Nagai , Tadashi Saito , Hiroaki Makino , Yasuhide Hayamaru , Kazuhide Yamamoto
IPC分类号： F25B43/00
CPC分类号： F25B43/00 , F25B43/02 , F25B2400/02 , F25B2400/23
摘要： To improve the separation efficiency of a gas-liquid separator in the gas-liquid separator and an air conditioner, the gas-liquid separator having a vessel with an inlet pipe and an outlet pipe is arranged such that an exit end section of the inlet pipe is formed to be closed or to have a gap, an expanded end section having a width greater than the diameter of that portion of the inlet pipe which crosses a container of the gas-liquid separator is provided, and that a lateral hole is formed in a side face of the expanded end section. Refrigerant vapor and refrigerant liquid are efficiently separated from each other at the expanded end section, and this improves separation efficiency of the gas-liquid separator.
摘要翻译：为了提高气液分离器和空调机中的气液分离器的分离效率，具有具有入口管和出口管的容器的气液分离器配置成使得入口管的出口端部被形成为封闭或具有间隙，设置有宽度大于与气液分离器的容器相交的入口管的部分的直径的扩展端部，并且形成侧孔扩展端部的侧面。制冷剂蒸气和制冷剂液体在膨胀端部处被有效地分离，这提高了气液分离器的分离效率。

40. 发明授权

US07442251B2 Method for producing silicon single crystals and silicon single crystal produced thereby 有权
标题翻译：由此制造单晶硅和单晶硅的方法
公开(公告)号：US07442251B2
公开(公告)日：2008-10-28
申请号：US11406272
申请日：2006-04-19
申请人： Shuichi Inami , Hiroki Murakami , Nobumitsu Takase , Ken Hamada , Tsuyoshi Nakamura
发明人： Shuichi Inami , Hiroki Murakami , Nobumitsu Takase , Ken Hamada , Tsuyoshi Nakamura
IPC分类号： C30B15/20
CPC分类号： C30B15/14 , C30B15/04 , C30B29/06
摘要： This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single crystal and has an inner contour that is coaxial with a pull axis, wherein an ambient gas in which the silicon single crystal is grown includes a hydrogen-atom-containing substance in gaseous form. This silicon single crystal is produced by the above method.
摘要翻译：这种用于制造单晶硅的方法包括：通过切克劳斯基法（Czochralski method）生长硅单晶，同时用周向环绕硅单晶的冷却构件冷却至少部分生长的单晶硅，并且具有与牵引轴，其中生长所述硅单晶的环境气体包括气态的含氢原子的物质。该硅单晶通过上述方法制造。

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