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    • 39. 发明授权
    • Electrophotographic photoreceptor, process cartridge, and image forming apparatus
    • 电子照相感光体,处理盒和成像设备
    • US08524428B2
    • 2013-09-03
    • US12875626
    • 2010-09-03
    • Hirofumi Nakamura
    • Hirofumi Nakamura
    • G03G5/06
    • G03G5/0614G03G5/064G03G5/14708G03G5/14786G03G5/14791G03G15/75
    • An electrophotographic photoreceptor includes: a conductive substrate; a photosensitive layer including a charge-generating layer containing a charge-generating material and a charge-transporting layer containing a charge-transporting material, the charge-transporting layer having a hole mobility of about 5.0×10−6 (cm2/V·sec) or less at an electric field of 2 V/cm; and an overcoat layer that is provided on the photosensitive layer and contains a cured material of a charge-transporting material, wherein relational expression (1) Ip(OCL)>Ip(CTL)>Ip(CGL) is satisfied wherein Ip(CGL) represents an ionization potential (eV) of the charge-generating material contained in the charge-generating layer; Ip(CTL) represents an ionization potential (eV) of the charge-transporting material contained in the charge-transporting layer; and Ip(OCL) represents an ionization potential (eV) of the charge-transporting material contained in the overcoat layer.
    • 电子照相感光体包括:导电性基材; 包含含有电荷产生材料的电荷产生层和含有电荷输送材料的电荷输送层的感光层,所述电荷输送层的空穴迁移率为约5.0×10 -6(cm 2 / V·秒) )或更小的电场; 以及设置在感光层上并含有电荷输送材料的固化物的外涂层,其中满足式(1)Ip(OCL)> Ip(CTL)> Ip(CGL)其中Ip(CGL) 表示包含在电荷产生层中的电荷产生材料的电离电位(eV); Ip(CTL)表示包含在电荷输送层中的电荷输送材料的电离电位(eV) 并且Ip(OCL)表示包覆在外涂层中的电荷输送材料的电离电位(eV)。
    • 40. 发明授权
    • Light emitting device
    • 发光装置
    • US08426847B2
    • 2013-04-23
    • US12840483
    • 2010-07-21
    • Hirofumi NakamuraSeong-Hee NohJiro Yamada
    • Hirofumi NakamuraSeong-Hee NohJiro Yamada
    • H01L29/08
    • H01L51/5271H01L51/5215H01L51/5231H01L51/5234H01L51/5262
    • A light emitting device includes: a first electrode, a conductor film, an organic layer having a light emitting layer made of an organic light emitting material provided therein, a semi-transmissive reflective film, a resistive layer, and a second electrode, all of which are laminated successively, wherein the conductor film transmits a part of light from the light emitting layer therethrough, the first electrode reflects the light having been transmitted through the conductor film, the second electrode transmits the light having been transmitted through the semi-transmissive reflective film therethrough, an average film thickness of the conductor film on the first electrode is from 1 nm to 6 nm, and an average film thickness of the semi-transmissive reflective film on the organic layer is from 1 nm to 6 nm.
    • 发光器件包括:第一电极,导体膜,具有设置在其中的由有机发光材料制成的发光层的有机层,半透射反射膜,电阻层和第二电极, 其中所述导体膜透射来自所述发光层的光的一部分,所述第一电极反射已经透过所述导体膜的光,所述第二电极透射通过所述半透射反射器的光 第一电极上的导体膜的平均膜厚为1nm〜6nm,有机层的半透射性反射膜的平均膜厚为1nm〜6nm。