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    • 32. 发明授权
    • Semiconductor device
    • 半导体器件
    • US5629534A
    • 1997-05-13
    • US691416
    • 1996-08-02
    • Hajime InuzukaNaomi AwanoTakeshi HasegawaMasahito Mizukoshi
    • Hajime InuzukaNaomi AwanoTakeshi HasegawaMasahito Mizukoshi
    • H01L31/12H01L31/173H01L33/00H01L33/08H01L33/10H01L33/30H01L33/40H01L33/44
    • H01L31/173H04B10/802
    • There is provided a monolithic photocoupler which is easy to integrate. An SOI structure is formed by providing a first insulation layer on a silicon substrate. The semiconductor single crystal region is further divided by trench insulation layers into separate regions. Light emitting elements are formed on one of the separated semiconductor single crystal region and light receiving elements are formed on the other semiconductor single crystal region. The light emitting elements are obtained by forming light emitting diodes made of GaAs or the like on the substrate using a heterogeneous growth process. An optical waveguide made of a material which is optically transparent and electrically insulative such as a TiO.sub.2 film on each pair of light emitting and light receiving elements. The insulation layers constituted by SiO.sub.2 layers have a refractive index smaller that of the active layer of the substrate. Thus, the light emitted by the light emitting elements is almost entirely reflected without leaking out, and the light which has entered the optical waveguides reaches the light receiving elements without leaking out except those components which have entered perpendicularly or at an angle close thereto.
    • 提供了一种易于集成的单片光电耦合器。 通过在硅衬底上设置第一绝缘层来形成SOI结构。 半导体单晶区域进一步被沟槽绝缘层划分成不同的区域。 发光元件形成在分离的半导体单晶区域中的一个上,并且在另一个半导体单晶区域上形成光接收元件。 通过使用异质生长工艺在衬底上形成由GaAs等制成的发光二极管来获得发光元件。 一种光学波导,由光学透明和电绝缘的材料制成,例如在每对发光和光接收元件上的TiO 2膜。 由SiO 2层构成的绝缘层的折射率小于衬底的有源层的折射率。 因此,由发光元件发出的光几乎完全被反射而不会泄漏,进入光波导的光到达光接收元件而不会泄漏,除了垂直或以其附近的角度输入的那些元件。