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31. 发明授权

US08298628B2 Low temperature deposition of silicon-containing films 有权
标题翻译：含硅薄膜的低温沉积
公开(公告)号：US08298628B2
公开(公告)日：2012-10-30
申请号：US12476734
申请日：2009-06-02
申请人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
发明人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3145 , H01L21/31608 , H01L21/31633 , H01L21/3185
摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
摘要翻译：本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

32. 发明申请

US20120128897A1 Organoaminosilane Precursors and Methods for Depositing Films Comprising Same 有权
标题翻译：有机氨硅烷前体和沉积包含它的膜的方法
公开(公告)号：US20120128897A1
公开(公告)日：2012-05-24
申请号：US13114287
申请日：2011-05-24
申请人： Manchao Xiao , Mark Leonard O'Neill , Heather Regina Bowen , Hansong Cheng , Xinjian Lei
发明人： Manchao Xiao , Mark Leonard O'Neill , Heather Regina Bowen , Hansong Cheng , Xinjian Lei
IPC分类号： C23C16/44 , C23C16/50 , C23C16/36 , C23C16/40 , C07F7/10 , C23C16/34
CPC分类号： C07F7/025 , C23C16/345 , C23C16/401
摘要： Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.
摘要翻译：这里描述的是形成介电膜的前体和方法。一方面，提供了具有下式I的硅前体：其中R 1独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基 C1-C6烷氧基，C1-C6二烷基氨基和吸电子基，n是选自0,1,2,3,4和5的数; R 2独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基，C 1至C 6烷氧基，C 1至C 6二烷基氨基，C 6至 C 10芳基，直链或支链C 1至C 6氟化烷基和C 4至C 10环烷基。

33. 发明授权

US09018387B2 Complexes of imidazole ligands 有权
标题翻译：咪唑配体的配合物
公开(公告)号：US09018387B2
公开(公告)日：2015-04-28
申请号：US13152885
申请日：2011-06-03
申请人： John Anthony Thomas Norman , Melanie K. Perez , Xinjian Lei , Daniel P. Spence , Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III
发明人： John Anthony Thomas Norman , Melanie K. Perez , Xinjian Lei , Daniel P. Spence , Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III
IPC分类号： C07F5/00 , C07F7/28 , C07F15/00 , C07F17/02 , C07F15/02 , C07F15/04 , C07F15/06 , C07F17/00 , C07F7/00
CPC分类号： C07F17/02 , C07F5/00 , C07F5/003 , C07F7/003 , C07F7/28 , C07F15/02 , C07F15/04 , C07F15/06 , C07F17/00
摘要： Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated.
摘要翻译：描述了金属咪唑盐络合物，其中描述了用大体积基团官能化的咪唑配体及其阴离子配对物，即咪唑盐。包括一种或多种这样的多烷基化咪唑酸盐阴离子配位到金属或一种以上选自碱金属，过渡金属，镧系元素金属，锕系金属，主要金属（包括硫族化物）的金属中。或者，除了其它不同的阴离子之外，多种不同的咪唑阴离子可以与金属配位以制备新的络合物。还考虑了新化合物的合成及其用于形成含薄金属膜的用途。

34. 发明授权

US08962875B2 Metal-enolate precursors for depositing metal-containing films 有权
标题翻译：用于沉积含金属膜的金属烯醇酯前体
公开(公告)号：US08962875B2
公开(公告)日：2015-02-24
申请号：US13418747
申请日：2012-03-13
申请人： John Anthony Thomas Norman , Xinjian Lei
发明人： John Anthony Thomas Norman , Xinjian Lei
IPC分类号： C07F17/00 , C23C16/18 , C23C16/40 , C23C16/455
CPC分类号： C07F17/00 , C23C16/18 , C23C16/405 , C23C16/45553
摘要： Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.
摘要翻译：提供了适合用作含金属膜的气相沉积前体的有机金属化合物。还提供了使用某些有机金属前体沉积含金属膜的方法。这种含金属膜在电子器件的制造中特别有用。

35. 发明授权

US08722933B2 Method for preparing metal complexes of polydentate beta-ketoiminates 有权
标题翻译：制备多齿β-酮基亚胺的金属络合物的方法
公开(公告)号：US08722933B2
公开(公告)日：2014-05-13
申请号：US12702655
申请日：2010-02-09
申请人： Xinjian Lei , Daniel P. Spence
发明人： Xinjian Lei , Daniel P. Spence
IPC分类号： C07C249/00 , C07C251/00
CPC分类号： C07C221/00 , C07C225/04
摘要： A method for making a group 2 metal-containing polydentate β-ketoiminate represented by the following structure A: wherein M is a metal selected from the group consisting of Mg, Ca, Sr, and Ba; R1, R3, R5, and R6 are independently selected from an alkyl group, a fluoroalkyl group, a cycloaliphatic group, and an aryl group; R2 is selected from a hydrogen atom, an alkyl group, an alkoxy group, a cycloaliphatic group, and an aryl group; and R4 is an alkyenyl bridge, comprising: reacting M in a reaction mixture comprising a tridentate ketoimine ligand and an alcohol comprising at least one selected from the group consisting of R7OH and (OH)nR8 wherein R7 and R8 are independently selected from an alkyl group and an aryl group. In certain embodiments, the reaction mixture further comprises an organic solvent.
摘要翻译：一种由以下结构A表示的含2族金属的多金属和酮基的方法：其中M是选自Mg，Ca，Sr和Ba的金属; R 1，R 3，R 5和R 6独立地选自烷基，氟烷基，脂环族基和芳基; R2选自氢原子，烷基，烷氧基，脂环族基和芳基; 并且R 4是烷基桥，其包括：在包含三齿酮亚胺配体和包含选自由R7OH和（OH）nR8组成的组中的至少一种的醇的反应混合物中使M反应，其中R 7和R 8独立地选自烷基和芳基。在某些实施方案中，反应混合物还包含有机溶剂。

36. 发明授权

US08592058B2 Methods of forming strontium titanate films 失效
标题翻译：形成钛酸锶薄膜的方法
公开(公告)号：US08592058B2
公开(公告)日：2013-11-26
申请号：US12793614
申请日：2010-06-03
申请人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Iain Buchanan
发明人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Iain Buchanan
IPC分类号： B32B9/00 , B32B19/00 , H01L27/108
CPC分类号： C23C16/45531 , C23C16/409 , H01L21/02197 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31691 , H01L28/56
摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.
摘要翻译：本发明的实施方案包括使用原子层沉积（ALD）形成钛酸锶（SrTiO 3）膜的方法。更具体地说，该方法包括使用ALD形成多个氧化钛（TiO 2）单元膜并使用ALD形成多个氧化锶（SrO）单元膜。 TiO 2和SrO单元膜的组合厚度小于约5埃。然后将TiO 2和SrO单元膜退火以形成钛酸锶层。

37. 发明申请

US20130030191A1 Group IV Metal Complexes For Metal-Containing Film Deposition 有权
标题翻译：用于含金属膜沉积的IV族金属络合物
公开(公告)号：US20130030191A1
公开(公告)日：2013-01-31
申请号：US13362077
申请日：2012-01-31
申请人： Wade Hampton Bailey, III , Sergei Vladimirovich Ivanov , Xinjian Lei , Moo-Sung Kim
发明人： Wade Hampton Bailey, III , Sergei Vladimirovich Ivanov , Xinjian Lei , Moo-Sung Kim
IPC分类号： C07F7/00 , C23C16/22 , C07F7/28
CPC分类号： C23C16/45553 , C07F7/003 , C23C16/405
摘要： Metal-containing complexes with general formula (1) (R1nPyr)(R2nPyr)ML1L2; or (2) [(R8XR9)(R1nPyr)(R2nPyr)]ML1L2 are disclosed; wherein M is a Group IV metal, Pyr is pyrrolyl ligand, n=1, 2 and 3, L1 and L2 are independently selected from alkoxide, amide or alkyl, L1 and L2 can be linked together, R1 and R2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and are selected from the group consisting of linear and branched C1-6 alkyls, Wand R9 are independently selected from the linear or branched chain alkylene group having 2-6 carbon atoms, and X is CH2 or oxygen. Methods of using the metal complexes as precursors to deposit metal or metal oxide films used for various devices in semi-conductor industries are also discussed.
摘要翻译：含有通式（1）（R1nPyr）（R2nPyr）的金属络合物ML1L2; 或（2）[（R8XR9）（R1nPyr）（R2nPyr）] ML1L2; 其中M是第IV族金属，Pyr是吡咯基配体，n = 1,2和3，L1和L2独立地选自烷氧基，酰胺或烷基，L1和L2可以连接在一起，R1和R2可以相同或不同在吡咯环的2,3,4位被取代的有机基团，并且选自直链和支链C 1-6烷基，W 9和R 9独立地选自具有2-6个碳原子的直链或支链亚烷基，X为CH 2或氧。还讨论了使用金属络合物作为前体沉积用于半导体工业中各种器件的金属或金属氧化物膜的方法。

38. 发明申请

US20130008345A1 Novel Metal Complexes for Metal-Containing Film Deposition 有权
标题翻译：用于含金属膜沉积的新型金属络合物
公开(公告)号：US20130008345A1
公开(公告)日：2013-01-10
申请号：US13348228
申请日：2012-01-11
申请人： Xinjian Lei , Daniel P. Spence
发明人： Xinjian Lei , Daniel P. Spence
IPC分类号： C07F5/00 , C09D1/00 , C23C16/06 , C07C251/04
CPC分类号： C07F5/00 , C07F5/003
摘要： Novel families of tri-valent metal complexes including scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, gallium, indium, manganese, antimony, bismuth; and of divalent metal complexes including magnesium, calcium, strontium, barium, manganese, cobalt, iron, nickel, ruthenium, copper, zinc, cadium are disclosed. These metal complexes can be used as precursors to deposit metal or metal oxide films in semi-conductor industries.
摘要翻译：三价金属络合物的新族，包括钪，钇，镧，铈，镨，钕，钐，铕，钆，铽，镝，钬，铒，ium，镱，镥，矾，镓，铟，锰，锑，铋以及包括镁，钙，锶，钡，锰，钴，铁，镍，钌，铜，锌，镉的二价金属络合物。这些金属络合物可用作在半导体工业中沉积金属或金属氧化物膜的前体。

39. 发明授权

US08247617B2 Group 2 metal precursors for depositing multi-component metal oxide films 有权
标题翻译：用于沉积多组分金属氧化物膜的第2族金属前体
公开(公告)号：US08247617B2
公开(公告)日：2012-08-21
申请号：US12266058
申请日：2008-11-06
申请人： Xinjian Lei , Liam J. Quinn , Daniel P. Spence
发明人： Xinjian Lei , Liam J. Quinn , Daniel P. Spence
IPC分类号： C07C49/00 , C07F5/00 , C07F5/06
CPC分类号： C07C225/06 , C07F3/003 , C07F5/003 , C23C16/18
摘要： Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication.
摘要翻译：合成了含有β-二酮和N-甲基 - 吡咯烷酮的新型Sr和Ba配合物。 TGA实验表明这些配合物是挥发性的，它们可用作半导体制造中的ALD钛酸锶（STO）或钡锶钡膜（BST）膜的前体。

40. 发明申请

US20120045589A1 Amidate Precursors For Depositing Metal Containing Films 有权
标题翻译：用于沉积含金属膜的酰胺前体
公开(公告)号：US20120045589A1
公开(公告)日：2012-02-23
申请号：US13030227
申请日：2011-02-18
申请人： Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III , Xinjian Lei , Daniel P. Spence
发明人： Sergei Vladimirovich Ivanov , Wade Hampton Bailey, III , Xinjian Lei , Daniel P. Spence
IPC分类号： C23C16/18 , C23C16/48 , C23C16/44 , C23C16/50 , C07F7/28 , C07F7/00
CPC分类号： C23C16/45553 , C07F7/003 , C23C16/405
摘要： Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” referes to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.
摘要翻译：挥发性金属酰胺化物金属络合物的实例是双（N-（叔丁基）乙基氨基乙酸酯）双（乙基甲基氨基）钛; （N-（叔丁基）（叔丁基）酰胺酯）三（乙基甲基氨基）钛; 双（N-（叔丁基）（叔丁基）酰胺酯）双（二甲基氨基）钛和（N-（叔丁基）（叔丁基）酰胺酯）三（二甲基氨基）钛。术语“挥发性”适用于在低于200℃的温度下蒸气压高于0.5托的本发明任何前体。还描述了使用这些金属酰胺化物配体的含金属膜沉积。

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