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    • 31. 发明申请
    • POWER CONDITIONING MODULE
    • 功率调节模块
    • US20050094374A1
    • 2005-05-05
    • US10883530
    • 2004-06-30
    • Thomas KennyKenneth GoodsonJuan SantiagoGeorge Carl Everett
    • Thomas KennyKenneth GoodsonJuan SantiagoGeorge Carl Everett
    • G06F1/26H01L23/34H01L23/473H01L23/498H02M1/00H05K7/20
    • G06F1/26H01L23/34H01L23/473H01L23/49827H01L2224/05573H01L2224/05624H01L2224/05644H01L2224/05647H01L2224/13025H01L2224/16H01L2924/19105H01L2924/00014
    • In one aspect, the present invention is a technique of, and a system for conditioning power for a consuming device. In this regard, a power conditioning module, affixed to an integrated circuit device, conditions power to be applied to the integrated circuit device. The power conditioning module includes a semiconductor substrate having a first interface and a second interface wherein the first interface opposes the second interface. The power conditioning module further includes a plurality of interface vias, to provide electrical connection between the first interface and the second interface, and a first set of pads, disposed on the first interface and a second set of pads disposed on the second interface. Each of the pads is connected to a corresponding one of the interface vias on either the first or second interface. The power conditioning module also includes electrical circuitry, disposed within semiconductor substrate, to condition the power to be applied to the integrated circuit device. The electrical circuitry may be disposed on the first interface, the second interface, or both interfaces. Moreover, the electrical circuitry includes at least one voltage regulator and at least one capacitor.
    • 一方面,本发明是一种用于调节消耗装置的功率的技术和系统。 在这方面,固定到集成电路装置的功率调节模块调节要施加到集成电路装置的功率。 功率调节模块包括具有第一接口和第二接口的半导体衬底,其中第一接口与第二接口相对。 所述功率调节模块还包括多个接口通路,以在所述第一接口和所述第二接口之间提供电连接,以及设置在所述第一接口上的第一组焊盘以及设置在所述第二接口上的第二组焊盘。 每个焊盘连接到第一或第二接口上的对应的一个接口通孔。 功率调节模块还包括设置在半导体衬底内的电路,以调节要施加到集成电路器件的功率。 电路可以设置在第一接口,第二接口或两个接口上。 此外,电路包括至少一个电压调节器和至少一个电容器。
    • 33. 发明授权
    • Micro-fabricated electrokinetic pump
    • 微电动动力泵
    • US06881039B2
    • 2005-04-19
    • US10366121
    • 2003-02-12
    • David CorbinKenneth GoodsonThomas KennyJuan SantiagoShulin Zeng
    • David CorbinKenneth GoodsonThomas KennyJuan SantiagoShulin Zeng
    • F04B17/00F04B19/00F04F99/00F04F11/00
    • F04B17/00F04B19/006
    • An electrokinetic pump for pumping a liquid includes a pumping body having a plurality of narrow, short and straight pore apertures for channeling the liquid through the body. A pair of electrodes for applying a voltage differential are formed on opposing surfaces of the pumping body at opposite ends of the pore apertures. The pumping body is formed on a support structure to maintain a mechanical integrity of the pumping body. The pump can be fabricated using conventional semiconductor processing steps. The pores are preferably formed using plasma etching. The structure is oxidized to insulate the structure and also narrow the pores. A support structure is formed by etching a substrate and removing an interface oxide layer. Electrodes are formed to apply a voltage potential across the pumping body. Another method of fabricating an electrokinetic pump includes providing etch stop alignment marks so that the etch step self-terminates.
    • 用于泵送液体的电动泵包括具有多个窄的,短的和直的孔隙的泵送体,用于将液体引导通过身体。 用于施加电压差的一对电极形成在孔隙的相对端处的泵体的相对表面上。 泵体形成在支撑结构上以保持泵体的机械完整性。 泵可以使用常规的半导体处理步骤制造。 优选使用等离子体蚀刻形成孔。 该结构被氧化以使结构绝缘并且还使孔变窄。 通过蚀刻衬底并除去界面氧化物层形成支撑结构。 形成电极以在泵体上施加电压电位。 制造电动泵的另一种方法包括提供蚀刻停止对准标记,使得蚀刻步骤自我终止。
    • 34. 发明授权
    • Micro-fabricated electrokinetic pump
    • 微电动动力泵
    • US07449122B2
    • 2008-11-11
    • US10968376
    • 2004-10-18
    • David CorbinKenneth GoodsonThomas KennyJuan SantiagoShulin Zeng
    • David CorbinKenneth GoodsonThomas KennyJuan SantiagoShulin Zeng
    • F04B1/00
    • F04B17/00F04B19/006
    • An electrokinetic pump for pumping a liquid includes a pumping body having a plurality of narrow, short and straight pore apertures for channeling the liquid through the body. A pair of electrodes for applying a voltage differential are formed on opposing surfaces of the pumping body at opposite ends of the pore apertures. The pumping body is formed on a support structure to maintain a mechanical integrity of the pumping body. The pump can be fabricated using conventional semiconductor processing steps. The pores are preferably formed using plasma etching. The structure is oxidized to insulate the structure and also narrow the pores. A support structure is formed by etching a substrate and removing an interface oxide layer. Electrodes are formed to apply a voltage potential across the pumping body. Another method of fabricating an electrokinetic pump includes providing etch stop alignment marks so that the etch step self-terminates.
    • 用于泵送液体的电动泵包括具有多个窄的,短的和直的孔隙的泵送体,用于将液体引导通过身体。 用于施加电压差的一对电极形成在孔隙的相对端处的泵体的相对表面上。 泵体形成在支撑结构上以保持泵体的机械完整性。 泵可以使用常规的半导体处理步骤制造。 优选使用等离子体蚀刻形成孔。 该结构被氧化以使结构绝缘并且还使孔变窄。 通过蚀刻衬底并除去界面氧化物层形成支撑结构。 形成电极以在泵体上施加电压电位。 制造电动泵的另一种方法包括提供蚀刻停止对准标记,使得蚀刻步骤自我终止。
    • 37. 发明授权
    • Composite structure comprising a semiconductor layer arranged on a
diamond or diamond-like layer and process for its production
    • 复合结构包括布置在金刚石或类金刚石层上的半导体层及其生产方法
    • US5843224A
    • 1998-12-01
    • US512080
    • 1995-08-07
    • Reinhard ZachaiTim GutheitKenneth Goodson
    • Reinhard ZachaiTim GutheitKenneth Goodson
    • C30B29/04C30B29/06H01L21/02H01L21/20
    • H01L21/02532H01L21/02381H01L21/02444H01L21/02447H01L21/02502H01L21/0251H01L21/02639
    • The invention relates to a composite structure including a semiconductor layer arranged on a diamond layer and/or a diamond-like layer, for subsequent processing to produce electronic components and/or groups of components and to a process for producing such a composite structure. In order to improve the quality of the subsequent components, the diamond layer is deposited underneath the component source zones from which the components are subsequently produced, and the diamond or diamond-like layer is provided at the margins of the component source zones and/or outside of the component source zones with edges where the thickness of the layer changes abruptly such that the edges have an edge height amounting to at least 1O%, preferably at least 50%, of the layer thickness of the diamond layer. Imperfections such as dislocations or other discontinuities in the semiconductor layer tend to collect at these edges outside of the component source zones, thereby decreasing the density of discontinuities in the component source zones and improving the quality of electronic components produced of material from the component source zones.
    • 本发明涉及一种复合结构,其包括布置在金刚石层和/或类金刚石层上的半导体层,用于随后的生产电子部件和/或组件组的处理以及用于生产这种复合结构的方法。 为了提高随后的组分的质量,将金刚石层沉积在组分源区域的下方,随后从其中产生组分,并且在组分源区域的边缘处提供金刚石或类金刚石层,和/或 在具有边缘厚度的边缘的组分源区域外部突然变化,使得边缘具有相当于金刚石层的层厚度的至少10%,优选至少50%的边缘高度。 在半导体层中的位错或其他不连续性的缺陷倾向于在这些边缘处收集在部件源区域外部,从而降低部件源区域中的不连续密度,并且提高从部件源区域产生的材料的电子部件的质量 。