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31. 发明申请

US20060063352A1 Process for manufacturing wafers of semiconductor material by layer transfer 有权
标题翻译：通过层转移制造半导体材料的晶片的工艺
公开(公告)号：US20060063352A1
公开(公告)日：2006-03-23
申请号：US11225883
申请日：2005-09-13
申请人： Gabriele Barlocchi , Flavio Villa
发明人： Gabriele Barlocchi , Flavio Villa
IPC分类号： H01L21/30 , H01L21/20
CPC分类号： H01L21/3247 , H01L21/3043 , H01L21/76251 , H01L21/76259
摘要： A process manufactures a wafer using semiconductor processing techniques. A bonding layer is formed on a top surface of a first wafer; a deep trench is dug in a substrate of semiconductor material belonging to a second wafer. A top layer of semiconductor material is formed on top of the substrate so as to close the deep trench at the top and form at least one buried cavity. The top layer of the second wafer is bonded to the first wafer through the bonding layer. The two wafers are subjected to a thermal treatment that causes bonding of at least one portion of the top layer to the first wafer and widening of the buried cavity. In this way, the portion of the top layer bonded to the first wafer is separated from the rest of the second wafer, to form a composite wafer.
摘要翻译：一种工艺使用半导体处理技术制造晶片。在第一晶片的顶表面上形成接合层; 在属于第二晶片的半导体材料的衬底中挖出深沟槽。半导体材料的顶层形成在衬底的顶部上，以封闭顶部的深沟槽并形成至少一个埋入空腔。第二晶片的顶层通过结合层结合到第一晶片。对这两个晶片进行热处理，其导致顶层的至少一部分与第一晶片的接合和掩埋腔的加宽。以这种方式，将结合到第一晶片的顶层的部分与第二晶片的其余部分分离，以形成复合晶片。

32. 发明申请

US20060017131A9 Process for manufacturing an SOI wafer by annealing and oxidation of buried channels 有权
公开(公告)号：US20060017131A9
公开(公告)日：2006-01-26
申请号：US10327702
申请日：2002-12-20
申请人： Flavio Villa , Gabriele Barlocchi , Pietro Corona
发明人： Flavio Villa , Gabriele Barlocchi , Pietro Corona
IPC分类号： H01L29/00
CPC分类号： H01L21/76283 , H01L21/3003 , H01L21/3247 , H01L21/76289 , H01L21/764 , H01L29/0649 , Y10S438/967
摘要： A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.

33. 发明授权

US06974693B2 Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing and operating methods therefor 有权
公开(公告)号：US06974693B2
公开(公告)日：2005-12-13
申请号：US10874902
申请日：2004-06-23
申请人： Gabriele Barlocchi , Flavio Villa
发明人： Gabriele Barlocchi , Flavio Villa
IPC分类号： B01L3/00 , B01L7/00 , C12M1/34
CPC分类号： B01L7/52 , B01L3/502707 , B01L2200/12 , B01L2300/0645 , B01L2300/0825 , B01L2300/1827 , B01L2300/1883
摘要： Integrated microreactor, formed in a monolithic body and including a semiconductor material region and an insulating layer; a buried channel extending in the semiconductor material region; a first and a second access trench extending in the semiconductor material region and in the insulating layer, and in communication with the buried channel; a first and a second reservoir formed on top of the insulating layer and in communication with the first and the second access trench; a suspended diaphragm formed by the insulating layer, laterally to the buried channel; and a detection electrode, supported by the suspended diaphragm, above the insulating layer, and inside the second reservoir.

34. 发明授权

US06929968B2 Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing and operating methods therefor 有权
标题翻译：与检测电极隔热的集成化学微反应器及其制造和操作方法
公开(公告)号：US06929968B2
公开(公告)日：2005-08-16
申请号：US10874905
申请日：2004-06-23
申请人： Gabriele Barlocchi , Flavio Villa
发明人： Gabriele Barlocchi , Flavio Villa
IPC分类号： B01L3/00 , B01L7/00 , H01L21/00
CPC分类号： B01L7/52 , B01L3/502707 , B01L2200/12 , B01L2300/0645 , B01L2300/0825 , B01L2300/1827 , B01L2300/1883
摘要： Integrated microreactor, formed in a monolithic body and including a semiconductor material region and an insulating layer; a buried channel extending in the semiconductor material region; a first and a second access trench extending in the semiconductor material region and in the insulating layer, and in communication with the buried channel; a first and a second reservoir formed on top of the insulating layer and in communication with the first and the second access trench; a suspended diaphragm formed by the insulating layer, laterally to the buried channel; and a detection electrode, supported by the suspended diaphragm, above the insulating layer, and inside the second reservoir.
摘要翻译：集成的微反应器，形成在一体的整体中并且包括半导体材料区域和绝缘层; 在半导体材料区域中延伸的掩埋沟道; 在所述半导体材料区域和所述绝缘层中延伸并与所述掩埋沟道连通的第一和第二访问沟槽; 第一和第二储存器，其形成在所述绝缘层的顶部上并且与所述第一和第二接入沟槽连通; 由绝缘层形成的悬浮膜，横向于埋设通道; 以及由悬挂隔膜支撑的检测电极，在绝缘层上方和第二储存器内部。

35. 发明授权

US06670257B1 Method for forming horizontal buried channels or cavities in wafers of monocrystalline semiconductor material 有权
标题翻译：在单晶半导体材料的晶片中形成水平埋入通道或空腔的方法
公开(公告)号：US06670257B1
公开(公告)日：2003-12-30
申请号：US09545260
申请日：2000-04-07
申请人： Gabriele Barlocchi , Flavio Villa
发明人： Gabriele Barlocchi , Flavio Villa
IPC分类号： H01L2176
CPC分类号： H01L21/2007 , H01L21/30608 , H01L21/3086 , H01L21/76251 , H01L21/76262 , H01L21/764
摘要： A method of forming buried cavities in a wafer of monocrystalline semiconductor material with at least one cavity formed in a substrate of monocrystalline semiconductor material by timed TMAH etching silicon; covering the cavity with a material inhibiting epitaxial growth; and growing a monocrystalline epitaxial layer above the substrate and the cavities. Thereby, the cavity is completely surrounded by monocrystalline material. Starting from this wafer, it is possible to form a thin membrane. The original wafer must have a plurality of elongate cavities or channels, parallel and adjacent to one another. Trenches are then excavated in the epitaxial layer as far as the channels, and the dividers between the channels are removed by timed TMAH etching.
摘要翻译：在单晶半导体材料的晶片中形成掩埋空穴的方法，其中至少一个腔通过定时的TMAH蚀刻硅在单晶半导体材料的衬底中形成; 用抑制外延生长的材料覆盖空腔; 以及在衬底和空腔上生长单晶外延层。因此，腔体被单晶材料完全包围。从该晶片开始，可以形成薄膜。原始晶片必须具有彼此平行并相邻的多个细长空腔或通道。然后在外延层中挖沟直到沟道，并且通过定时TMAH蚀刻去除沟道之间的分隔线。

36. 发明申请

US20070057355A1 Method for forming buried cavities within a semiconductor body, and semiconductor body thus made 有权
标题翻译：在半导体本体内形成掩埋空穴的方法以及由此制成的半导体本体
公开(公告)号：US20070057355A1
公开(公告)日：2007-03-15
申请号：US11486387
申请日：2006-07-12
申请人： Gabriele Barlocchi , Pietro Corona , Dino Faralli , Flavio Villa
发明人： Gabriele Barlocchi , Pietro Corona , Dino Faralli , Flavio Villa
IPC分类号： H01L21/324 , H01L23/16
CPC分类号： B81C1/00047 , B01L3/502707 , B01L7/52 , B01L2200/12 , B01L2300/0636 , B01L2300/0645 , B01L2300/0816 , B01L2300/1827 , B81B2201/0264 , B81B2203/0315
摘要： A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches.
摘要翻译：一种用于在半导体主体内形成掩埋空腔的方法，设想了以下步骤：提供具有由半导体材料制成的体区的晶片; 在本体区域中挖掘在它们的半导体材料壁之间划定的沟槽; 形成用于在脱氧气氛存在下关闭所述沟槽的闭合层，以便使所述沟槽内的脱氧气氛充满; 进行热处理，使壁的半导体材料迁移并形成掩埋腔。此外，在进行热处理之前，在沟槽顶部的闭合层上形成基本上不透氢的阻挡层。

37. 发明申请

US20050208696A1 Method for manufacturing a semiconductor pressure sensor 审中-公开
标题翻译：半导体压力传感器的制造方法
公开(公告)号：US20050208696A1
公开(公告)日：2005-09-22
申请号：US11082491
申请日：2005-03-16
申请人： Flavio Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
发明人： Flavio Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
IPC分类号： G01L9/00 , H01L21/00 , G06K11/16
CPC分类号： G01L9/0073 , G01L9/0045
摘要： Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.
摘要翻译：制造半导体压力传感器的方法，其中在硅衬底中，挖沟和界定壁; 闭合层外延生长，封闭顶部的沟槽并形成悬浮膜; 进行热处理以使壁的硅迁移并在悬浮膜下方形成封闭空腔; 并且形成用于将悬浮膜的偏转转换成电信号的结构。

38. 发明授权

US06770471B2 Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing and operating methods therefor 有权
公开(公告)号：US06770471B2
公开(公告)日：2004-08-03
申请号：US09965128
申请日：2001-09-26
申请人： Gabriele Barlocchi , Flavio Villa
发明人： Gabriele Barlocchi , Flavio Villa
IPC分类号： C12M134
CPC分类号： B01L7/52 , B01L3/502707 , B01L2200/12 , B01L2300/0645 , B01L2300/0825 , B01L2300/1827 , B01L2300/1883
摘要： Integrated microreactor, formed in a monolithic body and including a semiconductor material region and an insulating layer; a buried channel extending in the semiconductor material region; a first and a second access trench extending in the semiconductor material region and in the insulating layer, and in communication with the buried channel; a first and a second reservoir formed on top of the insulating layer and in communication with the first and the second access trench; a suspended diaphragm formed by the insulating layer, laterally to the buried channel; and a detection electrode, supported by the suspended diaphragm, above the insulating layer, and inside the second reservoir.

39. 发明授权

US06693039B2 Process for forming a buried cavity in a semiconductor material wafer and a buried cavity 有权
公开(公告)号：US06693039B2
公开(公告)日：2004-02-17
申请号：US09797206
申请日：2001-02-27
申请人： Pietro Erratico , Enrico Sacchi , Flavio Villa , Gabriele Barlocchi , Pietro Corona
发明人： Pietro Erratico , Enrico Sacchi , Flavio Villa , Gabriele Barlocchi , Pietro Corona
IPC分类号： H01L21302
CPC分类号： B81C1/00404
摘要： The process comprises the steps of forming, on top of a semiconductor material wafer, a holed mask having a lattice structure and comprising a plurality of openings each having a substantially square shape and a side with an inclination of 45° with respect to the flat of the wafer; carrying out an anisotropic etch in TMAH of the wafer, using said holed mask, thus forming a cavity, the cross section of which has the shape of an upside-down isosceles trapezium; and carrying out a chemical vapor deposition using TEOS, thus forming a TEOS layer which completely closes the openings of the holed mask and defines a diaphragm overlying the cavity and on which a suspended integrated structure can subsequently be manufactured.

40. 发明授权

US06506663B1 Method for producing an SOI wafer 有权
标题翻译： SOI晶圆的制造方法
公开(公告)号：US06506663B1
公开(公告)日：2003-01-14
申请号：US09457623
申请日：1999-12-08
申请人： Gabriele Barlocchi , Flavio Villa
发明人： Gabriele Barlocchi , Flavio Villa
IPC分类号： H01L2176
CPC分类号： H01L21/76262
摘要： A method for providing an SOI wafer that includes, on a wafer of monocrystalline semiconductor material, forming a hard mask of an oxidation-resistant material, defining first protective regions covering first portions of the wafer; excavating the second portions of the wafer, forming initial trenches extending between the first portions of the wafer; thermally oxidating the wafer, forming a sacrificial oxide layer extending at the lateral and base walls of the initial trenches, below the first protective regions; and wet etching the wafer, to completely remove the sacrificial oxide layer. Thereby, intermediate trenches are formed, the lateral walls of which are recessed with respect to the first protective regions. Subsequently, a second oxide layer is formed inside the intermediate trenches; a second silicon nitride layer is deposited; final trenches are produced; a buried oxide region is formed, and finally an epitaxial layer is grown.
摘要翻译：一种用于提供SOI晶片的方法，所述SOI晶片包括在单晶半导体材料的晶片上，形成覆盖所述晶片的第一部分的第一保护区域的抗氧化材料的硬掩模; 挖掘晶片的第二部分，形成在晶片的第一部分之间延伸的初始沟槽; 热氧化所述晶片，在所述第一保护区下方形成在所述初始沟槽的侧壁和底壁处延伸的牺牲氧化物层; 并湿式蚀刻晶片，以完全去除牺牲氧化物层。由此，形成中间沟槽，其侧壁相对于第一保护区域凹陷。随后，在中间沟槽内部形成第二氧化物层; 沉积第二氮化硅层; 制作最后的壕沟; 形成掩埋氧化物区域，最后生长外延层。

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