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    • 34. 发明申请
    • DYNAMIC ROUTE MAPPING BETWEEN MOBILE DEVICES
    • 移动设备之间的动态路由映射
    • US20140222328A1
    • 2014-08-07
    • US13997442
    • 2012-04-18
    • Jim S. BacaDavid StanasolovichMark H. PriceBurges M. Karkaria
    • Jim S. BacaDavid StanasolovichMark H. PriceBurges M. Karkaria
    • G01C21/00
    • G01C21/00G01C21/3438G01C21/3676H04W4/02H04W4/023H04W4/80
    • Generally, this disclosure describes dynamic route mapping between mobile devices. Techniques may include initiating communication between a first mobile device at a first location and a second mobile device at a second location; receiving a first location indicator by the second mobile device, the first location indicator transmitted from the first mobile device in response to a request from the second mobile device, the first location indicator corresponding to the first location; determining a convergence point based on at least one of the first location and the second location; mapping a travel route from at least one of the first location and the second location to the convergence point; and displaying the travel route on at least one of the first mobile device and the second mobile device.
    • 通常,本公开描述了移动设备之间的动态路由映射。 技术可以包括发起第一位置处的第一移动设备与第二位置处的第二移动设备之间的通信; 从所述第二移动设备接收第一位置指示符,响应于来自所述第二移动设备的请求,从所述第一移动设备发送的所述第一位置指示符,所述第一位置指示符对应于所述第一位置; 基于所述第一位置和所述第二位置中的至少一个确定收敛点; 将旅行路线从第一位置和第二位置中的至少一个映射到会聚点; 以及在所述第一移动设备和所述第二移动设备中的至少一个上显示所述旅行路线。
    • 35. 发明申请
    • METHODS AND APPARATUS TO AUTOMATE HAGGLING BEFORE PHYSICAL POINT-OF-SALE COMMERCE
    • 在物理销售点之前自动化的方法和装置
    • US20130297424A1
    • 2013-11-07
    • US13996648
    • 2011-08-19
    • Jim S. BacaSelim AissiMark H. PriceDavid StanasolovichBurges M. Karkaria
    • Jim S. BacaSelim AissiMark H. PriceDavid StanasolovichBurges M. Karkaria
    • G06Q30/06
    • G06Q30/0611G06Q30/06
    • In one example embodiment of a method for automating business negotiations, a vendor offers a product for sale at an original price. Subsequently, an automated haggling system receives a counteroffer to buy the product from a mobile device controlled by a shopper. The counteroffer proposes a second price for the product. In response to the counteroffer, the automated haggling system automatically determines whether the second price is acceptable. This determination may be based on data from a negotiation database with data identifying acceptable reduced prices. If the counteroffer proposes an acceptable price, the automated haggling system sends a message to the mobile device of the shopper to signify acceptance the counteroffer. In response to a determination that the shopper is purchasing the product at a point-of-sale (POS) station, the POS station automatically charges the shopper the negotiated price tier the product. Other embodiments are described and claimed.
    • 在用于自动商业谈判的方法的一个示例实施例中,供应商以原始价格提供要出售的产品。 随后,自动化系统收到从购物者控制的移动设备购买产品的代理商。 该产品为该产品提出了第二个价格。 响应于反补贴,自动交易系统自动确定第二个价格是否可以接受。 该确定可以基于来自具有识别可接受的降低价格的数据的协商数据库的数据。 如果反驳提出了可接受的价格,则自动交易系统向购物者的移动设备发送消息来表示验收。 为了响应购物者在销售点(POS)站购买产品的确定,POS站自动向购物者收取协商价格层的产品。 描述和要求保护其他实施例。
    • 39. 发明授权
    • Selective anisotropic reactive ion etching process for polysilicide
composite structures
    • 多晶硅复合结构的选择性各向异性反应离子蚀刻工艺
    • US4528066A
    • 1985-07-09
    • US628558
    • 1984-07-06
    • Robert M. Merkling, Jr.David Stanasolovich
    • Robert M. Merkling, Jr.David Stanasolovich
    • H01L21/302H01L21/28H01L21/3065H01L21/312H01L21/3213H01L21/306B44C1/22C03C15/00C03C25/06
    • H01L21/32137H01L21/312
    • A reactive ion etching technique is disclosed for etching a gate electrode out of layers of tungsten silicide and polycrystalline silicon without etching the underlying layer of silicon dioxide which serves as the gate dielectric and which covers the source and drain regions. The key feature of the invention, wherein the gate, which has been partially etched out of the tungsten silicide and polycrystalline silicon layers, is coated with poly tetra-fluoroethylene (teflon) to protect the sidewalls of the gate from being excessively etched in the lateral direction while the etching continues at the bottom on either side of the gate.The process is especially suitable for formation of tungsten silicide structures since no subsequent thermal steps are required which would otherwise cause a delamination of the tungsten silicide. In addition to eliminating undercutting, the process does not disturb the gate oxide over the source and drain areas, which would otherwise create a leaky device unsuitable for applications such as dynamic RAMs. The entire process can be carried out in a single pump down and therefore contamination levels can be minimized.
    • 公开了一种反应离子蚀刻技术,用于将栅极电极从硅化钨和多晶硅层之外蚀刻,而不会蚀刻用作栅极电介质并覆盖源极和漏极区域的二氧化硅的下层。 本发明的关键特征在于,已经部分地从硅化钨和多晶硅层中蚀刻出的栅极涂覆有聚四氟乙烯(聚四氟乙烯),以保护栅极的侧壁在侧面被过度蚀刻 而蚀刻在栅极的任一侧的底部继续蚀刻。 该方法特别适合于形成硅化钨结构,因为不需要随后的热步骤,否则会导致硅化钨的分层。 除了消除底切之外,该过程不会干扰源极和漏极区域上的栅极氧化物,否则将产生不适合于诸如动态RAM的应用的泄漏装置。 整个过程可以在单个泵中进行,因此污染水平可以最小化。