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31. 发明申请

US20100024201A1 METHOD FOR FABRICATING NARROW MAGNETIC READ WIDTH TMR/CPP SENSORS 有权
标题翻译：用于制造NARROW MAGNETIC READ WIDTH TMR / CPP SENSORS的方法
公开(公告)号：US20100024201A1
公开(公告)日：2010-02-04
申请号：US12184054
申请日：2008-07-31
申请人： Quang Le , Jui-Lung Li
发明人： Quang Le , Jui-Lung Li
IPC分类号： H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a manufacturing a magnetoresistive sensor that allows the sensor to be constructed with a very narrow and well controlled track width. The method includes depositing a layer of diamond like carbon over a series of sensor layers. A first mask is then formed to define a sensor, and an ion milling is performed to remove sensor material not protected by the first mask. Then, a second mask is formed, and a hard bias layer is deposited to the thickness of the sensor layers. The second mask is then lifted off and a CMP is performed to remove the first mask structure. Because the all areas other than the area directly over the sensor are substantially planar (due to the removal of the second mask and the low level of the hard bias material) a quick, gentle CMP can be used to remove the first mask layer even if the first mask is small, such as for definition of a very narrow track-width sensor.
摘要翻译：一种用于制造磁阻传感器的方法，该传感器允许传感器被构造成具有非常窄且良好控制的轨道宽度。该方法包括在一系列传感器层上沉积一层类似金刚石的碳。然后形成第一掩模以限定传感器，并且执行离子铣削以去除未被第一掩模保护的传感器材料。然后，形成第二掩模，并且在传感器层的厚度上沉积硬偏置层。然后将第二掩模剥离并执行CMP以除去第一掩模结构。由于直接在传感器上方的区域以外的所有区域基本上是平面的（由于第二掩模的移除和硬偏置材料的低水平），可以使用快速柔和的CMP来去除第一掩模层，即使第一个掩模很小，例如用于定义非常窄的轨道宽度传感器。

32. 发明授权

US07398592B2 Manufacturable CMP assisted liftoff process to fabricate write pole for perpendicular recording heads 失效
标题翻译：可制造的CMP辅助脱模工艺，用于制造垂直记录头的写入极
公开(公告)号：US07398592B2
公开(公告)日：2008-07-15
申请号：US11093962
申请日：2005-03-29
申请人： Quang Le , Jui-Lung Li
发明人： Quang Le , Jui-Lung Li
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B33/0438 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： This invention describes a manufacturable method, including a CMP liftoff process, for removing masking materials after ion milling for fabricating the write pole of a magnetic head. Significant parameters for the CMP assisted liftoff process include the thickness of the remaining mask materials after the write pole ion milling for effective CMP assisted liftoff, the thickness of the dielectric fill material deposited to protect the write pole during the CMP liftoff step, and the type of CMP slurry, polishing pad and the polishing conditions that are required to yield satisfactory results.
摘要翻译：本发明描述了一种可制造的方法，包括CMP去除工艺，用于在用于制造磁头的写磁极的离子铣削之后去除掩模材料。用于CMP辅助剥离工艺的重要参数包括用于有效CMP辅助剥离的写入极离子铣削之后的剩余掩模材料的厚度，在CMP去除步骤期间沉积以保护写入极的介电填充材料的厚度和类型的CMP浆料，抛光垫以及产生令人满意的结果所需的抛光条件。

33. 发明授权

US07341825B2 Method for producing high resolution nano-imprinting masters 有权
标题翻译：生产高分辨率纳米压印机的方法
公开(公告)号：US07341825B2
公开(公告)日：2008-03-11
申请号：US11442097
申请日：2006-05-25
申请人： Zvonimir Z. Bandic , Jui-Lung Li , Henry Hung Yang
发明人： Zvonimir Z. Bandic , Jui-Lung Li , Henry Hung Yang
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/0015 , G03F7/0035
摘要： A method for producing high resolution nano-imprinting masters is disclosed. The method inverts the negative features of an exposed and developed positive e-beam resist to positive features in the patterned silicon nitride layer of the nano-imprinting master. A first, oxidation resistant, mask layer is used to pattern a DLC layer deposited on the silicon nitride layer. After patterning the DLC layer, the negative features of the DLC layer are filled with deposited metal, which creates a second mask layer subsequent to the removal of the remaining DLC layer. The second mask layer is used to etch the silicon nitride layer, creating the final nano-imprinting master.
摘要翻译：公开了一种生产高分辨率纳米压印机的方法。该方法将曝光和显影的正电子束抗蚀剂的负面特征反转到纳米压印母版的图案化氮化硅层中的正特征。使用第一抗氧化掩模层对沉积在氮化硅层上的DLC层进行图案化。在图案化DLC层之后，DLC层的负面特征被沉积的金属填充，其在除去剩余的DLC层之后产生第二掩模层。第二掩模层用于蚀刻氮化硅层，形成最终的纳米压印母版。

34. 发明申请

US20070238198A1 Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same 失效
标题翻译：具有与集电体基板材料在一起的基极引线层的三端子磁感测装置及其制造方法
公开(公告)号：US20070238198A1
公开(公告)日：2007-10-11
申请号：US11239178
申请日：2005-09-29
申请人： Robert Fontana , Jui-Lung Li , Jeffrey Lille , Sergio Nicoletti
发明人： Robert Fontana , Jui-Lung Li , Jeffrey Lille , Sergio Nicoletti
IPC分类号： H01L21/00
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , H01L29/66984
摘要： Three terminal magnetic sensing devices (TTMs) having base lead layers in-plane with collector substrate materials, and methods of making the same, are disclosed. In one illustrative example, a collector substrate having an elevated region and a recessed region adjacent the elevated region is provided. An insulator layer is formed in full-film over the collector substrate, and a base lead layer is formed in full-film over the insulator layer and in-plane with semiconductor materials of the elevated region. The insulator materials and the base lead materials that are formed over the elevated region are removed. A sensor stack structure having an emitter region and a base region is then formed over the elevated region such that part of the base region is formed over an end of the base lead layer. A base conductive via may be formed to contact base lead materials of the base lead layer at a suitable distance away from the sensor stack structure. Advantageously, the base conductive via formation may occur without causing damage to the sensor stack structure. Also, the base lead layer is formed in the recessed region of the collector substrate prior to the formation of the sensor stack structure such that the TTM may be entirely in-situ manufactured. Furthermore, the trackwidth of the TTM may be defined directly by the elevated region of the collector substrate. The TTM is suitable for incorporation into nanoscale devices which increase areal recording densities, therefore aiding the revolution in magnetic storage.
摘要翻译：公开了具有与集电器基板材料在一起的基极引线层的三端子磁感测装置（TTM）及其制造方法。在一个说明性示例中，提供了具有升高区域和与升高区域相邻的凹陷区域的收集器基板。在集电体基板上形成绝缘体层，并且在绝缘体层上形成基极引线层，并且与升高区域的半导体材料在同一平面内形成基极引线层。去除在升高区域上形成的绝缘体材料和基底引线材料。然后在升高的区域上形成具有发射极区域和基极区域的传感器堆叠结构，使得基极区域的一部分形成在基极引线层的一端上。可以形成基底导电通孔，以在离传感器堆叠结构适当的距离处接触基底引线层的基底引线材料。有利地，可以在不会对传感器堆叠结构造成损害的情况下发生基底导电通孔形成。此外，在形成传感器堆叠结构之前，基极引线层形成在集电体基板的凹陷区域中，使得TTM可以完全原位制造。此外，TTM的轨道宽度可以由收集器基板的升高区域直接定义。 TTM适合纳入纳米级器件，增加面积记录密度，从而有助于磁存储的革命。

35. 发明申请

US20070183093A1 Protective layer for CMP assisted lift-off process and method of fabrication 审中-公开
标题翻译： CMP辅助剥离工艺的保护层和制造方法
公开(公告)号：US20070183093A1
公开(公告)日：2007-08-09
申请号：US11350345
申请日：2006-02-07
申请人： Quang Le , Jui-Lung Li , Yi Zheng
发明人： Quang Le , Jui-Lung Li , Yi Zheng
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , G11B5/3169
摘要： A magnetic head is disclosed having a write head with an encapsulated protected pole structure, which includes a P3 pole tip. A protective layer surrounds at least a portion of the P3 pole tip, and an encapsulating material layer surrounds a portion of the protective layer. Also disclosed is a method of fabrication for a write head with an encapsulated protected pole structure.
摘要翻译：公开了一种具有带有封装保护极结构的写头的磁头，其包括P3极尖。保护层包围P3极尖的至少一部分，并且封装材料层围绕保护层的一部分。还公开了一种用于具有封装的保护极结构的写入头的制造方法。

36. 发明授权

US07251878B2 Method and apparatus for defining leading edge taper of a write pole tip 失效
标题翻译：用于定义写入磁极尖端的前缘锥度的方法和装置
公开(公告)号：US07251878B2
公开(公告)日：2007-08-07
申请号：US10884368
申请日：2004-06-30
申请人： Quang Le , Jui-Lung Li , Yvette Chung Nga Winton , Sue Siyang Zhang , Yi Zheng
发明人： Quang Le , Jui-Lung Li , Yvette Chung Nga Winton , Sue Siyang Zhang , Yi Zheng
IPC分类号： G11B5/187 , B44C1/22
CPC分类号： G11B5/3163 , G11B5/1278 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method and apparatus for defining leading edge taper of a write pole tip is disclosed. The fabrication process uses reactive ion etching to fabricate LET with tight control of the placement of LET's edge and to achieve higher angle for providing a higher effective write field at the pole tip while minimizing ATI for high-density perpendicular recording. The placement of a resist's edge is used to define the LET's edge and a CMP process is used to provide a planar surface for the fabrication of the write pole.
摘要翻译：公开了一种用于限定写入磁极尖端的前缘锥形的方法和装置。制造工艺使用反应离子蚀刻来制造LET，可以严格控制LET的边缘放置，并实现更高的角度，以便在磁极尖端提供更高的有效写入场，同时最大限度地降低ATI用于高密度垂直记录。使用抗蚀剂边缘的放置来定义LET的边缘，并且使用CMP工艺来提供用于制造写入极的平面。

37. 发明授权

US07212379B2 Perpendicular magnetic recording head with flare and taper configurations 有权
标题翻译：垂直磁记录头，具有喇叭形和锥形配置
公开(公告)号：US07212379B2
公开(公告)日：2007-05-01
申请号：US10815286
申请日：2004-03-31
申请人： Yimin Hsu , Quang Le , Jui-Lung Li , Ian Robson McFadyen , James Lamar Nix , Neil Leslie Robertson , Mason Lamar Williams, III
发明人： Yimin Hsu , Quang Le , Jui-Lung Li , Ian Robson McFadyen , James Lamar Nix , Neil Leslie Robertson , Mason Lamar Williams, III
IPC分类号： G11B5/31
CPC分类号： G11B5/3146 , G11B5/1278 , G11B5/1872 , G11B5/3116
摘要： A magnetic write head for use in perpendicular magnetic data recording. The write head includes a write pole and a trailing shield having a tapered surface. A return pole stitched to the trailing shield is magnetically connected with the write pole at a location away from the air bearing surface (ABS).
摘要翻译：用于垂直磁数据记录的磁写头。写头包括具有锥形表面的写入极和后屏蔽。缝合到后挡板的返回杆在远离空气轴承表面（ABS）的位置处与写入磁极磁连接。

38. 发明申请

US20060256482A1 Method to fabricate side shields for a magnetic sensor 失效
公开(公告)号：US20060256482A1
公开(公告)日：2006-11-16
申请号：US11126508
申请日：2005-05-10
申请人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
发明人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/112 , G11B5/3169 , G11B5/3906 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

39. 发明申请

US20060002024A1 Method and apparatus for defining leading edge taper of a write pole tip 失效
标题翻译：用于定义写入磁极尖端的前缘锥度的方法和装置
公开(公告)号：US20060002024A1
公开(公告)日：2006-01-05
申请号：US10884368
申请日：2004-06-30
申请人： Quang Le , Jui-Lung Li , Yvette Nga Winton , Sue Zhang , Yi Zheng
发明人： Quang Le , Jui-Lung Li , Yvette Nga Winton , Sue Zhang , Yi Zheng
IPC分类号： G11B5/147
CPC分类号： G11B5/3163 , G11B5/1278 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method and apparatus for defining leading edge taper of a write pole tip is disclosed. The fabrication process uses reactive ion etching to fabricate LET with tight control of the placement of LET's edge and to achieve higher angle for providing a higher effective write field at the pole tip while minimizing ATI for high-density perpendicular recording. The placement of a resist's edge is used to define the LET's edge and a CMP process is used to provide a planar surface for the fabrication of the write pole.
摘要翻译：公开了一种用于限定写入磁极尖端的前缘锥形的方法和装置。制造工艺使用反应离子蚀刻来制造LET，可以严格控制LET的边缘放置，并实现更高的角度，以便在磁极尖端提供更高的有效写入场，同时最大限度地降低ATI用于高密度垂直记录。使用抗蚀剂边缘的放置来定义LET的边缘，并且使用CMP工艺来提供用于制造写入极的平面。

40. 发明授权

US06969625B2 CMP assisted liftoff micropatterning 失效
标题翻译： CMP辅助提升微图案
公开(公告)号：US06969625B2
公开(公告)日：2005-11-29
申请号：US10949433
申请日：2004-09-24
申请人： Marie-Claire Cyrille , Frederick H. Dill , Cherngye Hwang , Jui-Lung Li
发明人： Marie-Claire Cyrille , Frederick H. Dill , Cherngye Hwang , Jui-Lung Li
IPC分类号： G11B5/39 , G11B5/31 , H01L21/304 , H01L43/08 , H01L21/00 , H01L21/44
CPC分类号： G11B5/313
摘要： A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.
摘要翻译：微电子器件的方法和结构包括：衬底上的第一膜，第一膜上的第一耐抛光层，第一耐抛光层上的第二膜，第二膜上的第二耐光层，其中第一和第二膜第二耐光层包括类金刚石碳。第一膜包括电阻材料，而第二膜包括低电阻导电材料。第一个胶片是一个实现为磁读取传感器的电阻器。电阻材料对磁场敏感。该装置还包括在第一和第二膜之间的大致垂直的接合点和邻接于电阻材料的电介质膜。

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