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31. 发明授权

US07994523B2 AC light emitting diode having improved transparent electrode structure 有权
标题翻译：交流发光二极管具有改善的透明电极结构
公开(公告)号：US07994523B2
公开(公告)日：2011-08-09
申请号：US12088999
申请日：2006-11-28
申请人： Jae Ho Lee , Yeo Jin Yoon
发明人： Jae Ho Lee , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L25/0753 , H01L33/62 , H01L2224/48
摘要： Disclosed is an AC light emitting diode having an improved transparent electrode structure. The light emitting diode comprises a plurality of light emitting cells formed on a single substrate, each of the light emitting cells having a first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. A transparent electrode structure is positioned on each of the light emitting cells. The transparent electrode structure includes at least two portions separated from each other, or a center portion and branches laterally extending from both sides of the center portion. Meanwhile, wires electrically connect adjacent two of the light emitting cells. Accordingly, a plurality of light emitting cells are electrically connected, whereby a light emitting diode can be provided which can be driven under AC power source. Also, an improved transparent electrode structure is employed, so that the current density can be prevented from being locally increased.
摘要翻译：公开了具有改进的透明电极结构的AC发光二极管。发光二极管包括形成在单个基板上的多个发光单元，每个发光单元具有第一导电型半导体层，位于第一导电型半导体层的一个区域上的第二导电型半导体层，以及插入在第一和第二导电类型半导体层之间的有源层。透明电极结构位于每个发光单元上。透明电极结构包括彼此分离的至少两个部分或中心部分，并且从中心部分的两侧侧向延伸。同时，电线电连接相邻的两个发光单元。因此，多个发光单体电连接，从而可以提供可在交流电源下驱动的发光二极管。此外，采用改进的透明电极结构，从而可以防止电流密度局部增加。

32. 发明申请

US20100041173A1 METHOD OF FABRICATING LIGHT EMITING DIODE CHIP 有权
标题翻译：制造光二极管芯片的方法
公开(公告)号：US20100041173A1
公开(公告)日：2010-02-18
申请号：US12442617
申请日：2007-09-14
申请人： Jun Hee Lee , Jong Kyu Kim , Yeo Jin Yoon
发明人： Jun Hee Lee , Jong Kyu Kim , Yeo Jin Yoon
IPC分类号： H01L33/00 , H01L21/78
CPC分类号： H01L33/0095 , H01L33/20
摘要： The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.
摘要翻译：本发明提供一种制造在N型半导体层和P型半导体层之间具有有源层的发光二极管芯片的方法。该方法包括以下步骤：制备基底; 在所述基板上层叠所述半导体层，所述半导体层具有在所述N型半导体层和所述P型半导体层之间的有源层; 以及在层叠在基板上的半导体层上形成凹槽，直到基板被暴露，由此通过划分成多个芯片的半导体层中的凹槽形成倾斜的侧壁。根据本发明的实施例，形成在发光二极管芯片的基板上的半导体层的侧壁相对于基板倾斜，由此与没有倾斜的发光二极管芯片相比，其方向角度变宽。随着发光二极管芯片的方位角变宽，当使用发光二极管芯片和荧光体制造白色发光器件时，即使荧光体不集中在器件的中心，也可以调整光均匀性。因此，通过减少由分散在中心部分的荧光体的量增加引起的遮光现象，可以提高整体发光效率。

33. 发明申请

US20090200567A1 CHIP-TYPE LED PACKAGE AND LIGHT EMITTING APPARATUS HAVING THE SAME 有权
标题翻译：芯片型LED封装和发光装置
公开(公告)号：US20090200567A1
公开(公告)日：2009-08-13
申请号：US12298238
申请日：2007-05-07
申请人： Yeo Jin Yoon
发明人： Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/56 , H01L24/73 , H01L33/507 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Disclosed are a chip-type LED package and a light emitting apparatus having the same. The chip-type LED package includes a thermally conductive substrate with lead electrodes formed thereon. An LED chip is mounted on the thermally conductive substrate, and a lower molding portion covers the LED chip. In addition, an upper molding portion having hardness higher than that of the lower molding portion covers the lower molding portion. The upper molding portion is formed by performing transfer molding using resin powder. Accordingly, since the lower molding portion can be formed of a resin having hardness smaller than that of the upper molding portion, it is possible to provide a chip-type LED package in which device failure due to thermal deformation of the molding portion can be prevented.
摘要翻译：公开了一种芯片型LED封装和具有该封装的发光装置。芯片型LED封装包括其上形成有引线电极的导热基板。 LED芯片安装在导热基板上，下模制部分覆盖LED芯片。此外，具有比下成形部的硬度更高的硬度的上模制部分覆盖下模制部分。上模塑部分通过使用树脂粉末进行传递模塑而形成。因此，由于下模塑部分可以由具有小于上模塑部分的硬度的树脂形成，所以可以提供一种芯片型LED封装，其中可以防止由于模制部分的热变形引起的器件故障。

34. 发明授权

US07572653B2 Method of fabricating light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US07572653B2
公开(公告)日：2009-08-11
申请号：US11750955
申请日：2007-05-18
申请人： Jong Hwan Kim , Yeo Jin Yoon , Jae Ho Lee
发明人： Jong Hwan Kim , Yeo Jin Yoon , Jae Ho Lee
IPC分类号： H01L21/00 , H01L21/311
CPC分类号： H01L33/0095 , H01L33/20
摘要： Disclosed herein is a method of fabricating a light emitting diode. The method comprises preparing a substrate, forming a lower semiconductor layer, an active layer and an upper semiconductor layer on the substrate, forming a photoresist pattern over the upper semiconductor layer such that a sidewall of the photoresist pattern is inclined to an upper surface of the substrate, and sequentially etching the upper semiconductor layer, active layer and lower semiconductor layer using the photoresist pattern as an etching mask. With this structure, since the light emitting diode permits light generated in the active layer to be easily emitted to an outside through the sidewalls of the semiconductor layers, it has improved light emitting efficiency.
摘要翻译：本文公开了一种制造发光二极管的方法。该方法包括在衬底上制备衬底，形成下半导体层，有源层和上半导体层，在上半导体层上形成光致抗蚀剂图案，使得光致抗蚀剂图案的侧壁倾斜于衬底，并且使用光致抗蚀剂图案作为蚀刻掩模来顺序蚀刻上半导体层，有源层和下半导体层。利用这种结构，由于发光二极管允许有源层中产生的光通过半导体层的侧壁容易地发射到外部，所以其具有改善的发光效率。

35. 发明申请

US20080217629A1 Ac Light Emitting Diode Having Improved Transparent Electrode Structure 有权
标题翻译：具有改进的透明电极结构的交流发光二极管
公开(公告)号：US20080217629A1
公开(公告)日：2008-09-11
申请号：US12088999
申请日：2006-11-28
申请人： Jae Ho Lee , Yeo Jin Yoon
发明人： Jae Ho Lee , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L25/0753 , H01L33/62 , H01L2224/48
摘要： Disclosed is an AC light emitting diode having an improved transparent electrode structure. The light emitting diode comprises a plurality of light emitting cells formed on a single substrate, each of the light emitting cells having a first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. A transparent electrode structure is positioned on each of the light emitting cells. The transparent electrode structure includes at least two portions separated from each other, or a center portion and branches laterally extending from both sides of the center portion. Meanwhile, wires electrically connect adjacent two of the light emitting cells. Accordingly, a plurality of light emitting cells are electrically connected, whereby a light emitting diode can be provided which can be driven under AC power source. Also, an improved transparent electrode structure is employed, so that the current density can be prevented from being locally increased.
摘要翻译：公开了具有改进的透明电极结构的AC发光二极管。发光二极管包括形成在单个基板上的多个发光单元，每个发光单元具有第一导电型半导体层，位于第一导电型半导体层的一个区域上的第二导电型半导体层，以及插入在第一和第二导电类型半导体层之间的有源层。透明电极结构位于每个发光单元上。透明电极结构包括彼此分离的至少两个部分或中心部分，并且从中心部分的两侧侧向延伸。同时，电线电连接相邻的两个发光单元。因此，多个发光单体电连接，从而可以提供可在交流电源下驱动的发光二极管。此外，采用改进的透明电极结构，从而可以防止电流密度局部增加。

36. 发明授权

US08987772B2 Light emitting diode chip having electrode pad 有权
标题翻译：具有电极垫的发光二极管芯片
公开(公告)号：US08987772B2
公开(公告)日：2015-03-24
申请号：US13885777
申请日：2011-02-28
申请人： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang-Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
发明人： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang-Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
IPC分类号： H01L33/38 , H01L33/46 , H01L33/10 , H01L33/40 , H01L33/44 , H01L33/60 , H01L33/36 , H01L33/20 , H01L33/42
CPC分类号： H01L33/387 , H01L33/0008 , H01L33/10 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0066
摘要： Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
摘要翻译：本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

37. 发明授权

US08628983B2 Light emitting diode and method of fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08628983B2
公开(公告)日：2014-01-14
申请号：US13368122
申请日：2012-02-07
申请人： Won Cheol Seo , Chang Youn Kim , Yeo Jin Yoon
发明人： Won Cheol Seo , Chang Youn Kim , Yeo Jin Yoon
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L25/0753 , H01L27/153 , H01L33/46 , H01L33/641 , H01L2224/49107
摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.
摘要翻译：这里公开了一种发光二极管。发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

38. 发明授权

US08294386B2 Light emitting device with light emitting cells arrayed 有权
标题翻译：具有排列发光单元的发光装置
公开(公告)号：US08294386B2
公开(公告)日：2012-10-23
申请号：US13243802
申请日：2011-09-23
申请人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Lacroix Yves
发明人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Lacroix Yves
IPC分类号： H05B37/22
CPC分类号： H05B33/0821 , H01L24/37 , H01L24/40 , H01L27/156 , H01L33/62 , H01L2224/371 , H01L2224/40137 , H01L2924/00014 , H01L2924/12041 , H05B33/0803 , H05B33/0809 , Y02B20/348 , H01L2924/00 , H01L2224/37099 , H01L2224/84
摘要： The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.
摘要翻译：本发明涉及一种发光装置。根据本发明的发光器件包括具有多个发光单元的发光单元块; 以及连接到所述发光单元块的输入和输出端子的桥式整流电路，其中所述桥式整流电路在节点之间包括多个二极管。在制造其中内置有桥式整流电路的交流发光装置的情况下，本发明可以提供一种通过将桥式整流电路的二极管的尺寸设定为一个可以提高发光装置的可靠性和亮度的发光装置一定的尺寸并控制其数量。

39. 发明授权

US08247244B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08247244B2
公开(公告)日：2012-08-21
申请号：US12882449
申请日：2010-09-15
申请人： Chang Yeon Kim , Yeo Jin Yoon
发明人： Chang Yeon Kim , Yeo Jin Yoon
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L33/14
摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.
摘要翻译：提供了一种发光器件及其制造方法。根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

40. 发明授权

US07999276B2 Chip-type LED package and light emitting apparatus having the same 有权
标题翻译：芯片型LED封装和具有该封装的发光装置
公开(公告)号：US07999276B2
公开(公告)日：2011-08-16
申请号：US12298238
申请日：2007-05-07
申请人： Yeo Jin Yoon
发明人： Yeo Jin Yoon
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L29/24 , H01L31/0203 , H01L23/29
CPC分类号： H01L33/56 , H01L24/73 , H01L33/507 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Disclosed are a chip-type LED package and a light emitting apparatus having the same. The chip-type LED package includes a thermally conductive substrate with lead electrodes formed thereon. An LED chip is mounted on the thermally conductive substrate, and a lower molding portion covers the LED chip. In addition, an upper molding portion having hardness higher than that of the lower molding portion covers the lower molding portion. The upper molding portion is formed by performing transfer molding using resin powder. Accordingly, since the lower molding portion can be formed of a resin having hardness smaller than that of the upper molding portion, it is possible to provide a chip-type LED package in which device failure due to thermal deformation of the molding portion can be prevented.
摘要翻译：公开了一种芯片型LED封装和具有该封装的发光装置。芯片型LED封装包括其上形成有引线电极的导热基板。 LED芯片安装在导热基板上，下模制部分覆盖LED芯片。此外，具有比下成形部的硬度更高的硬度的上模制部分覆盖下模制部分。上模塑部分通过使用树脂粉末进行传递模塑而形成。因此，由于下模塑部分可以由具有小于上模塑部分的硬度的树脂形成，所以可以提供一种芯片型LED封装，其中可以防止由于模制部分的热变形引起的器件故障。

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