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1. 发明授权

US07572653B2 Method of fabricating light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US07572653B2
公开(公告)日：2009-08-11
申请号：US11750955
申请日：2007-05-18
申请人： Jong Hwan Kim , Yeo Jin Yoon , Jae Ho Lee
发明人： Jong Hwan Kim , Yeo Jin Yoon , Jae Ho Lee
IPC分类号： H01L21/00 , H01L21/311
CPC分类号： H01L33/0095 , H01L33/20
摘要： Disclosed herein is a method of fabricating a light emitting diode. The method comprises preparing a substrate, forming a lower semiconductor layer, an active layer and an upper semiconductor layer on the substrate, forming a photoresist pattern over the upper semiconductor layer such that a sidewall of the photoresist pattern is inclined to an upper surface of the substrate, and sequentially etching the upper semiconductor layer, active layer and lower semiconductor layer using the photoresist pattern as an etching mask. With this structure, since the light emitting diode permits light generated in the active layer to be easily emitted to an outside through the sidewalls of the semiconductor layers, it has improved light emitting efficiency.
摘要翻译：本文公开了一种制造发光二极管的方法。该方法包括在衬底上制备衬底，形成下半导体层，有源层和上半导体层，在上半导体层上形成光致抗蚀剂图案，使得光致抗蚀剂图案的侧壁倾斜于衬底，并且使用光致抗蚀剂图案作为蚀刻掩模来顺序蚀刻上半导体层，有源层和下半导体层。利用这种结构，由于发光二极管允许有源层中产生的光通过半导体层的侧壁容易地发射到外部，所以其具有改善的发光效率。

2. 发明申请

US20070269913A1 METHOD OF FABRICATING LIGHT EMITTING DIODE 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US20070269913A1
公开(公告)日：2007-11-22
申请号：US11750955
申请日：2007-05-18
申请人： Jong Hwan Kim , Yeo Jin Yoon , Jae Ho Lee
发明人： Jong Hwan Kim , Yeo Jin Yoon , Jae Ho Lee
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0095 , H01L33/20
摘要： Disclosed herein is a method of fabricating a light emitting diode. The method comprises preparing a substrate, forming a lower semiconductor layer, an active layer and an upper semiconductor layer on the substrate, forming a photoresist pattern over the upper semiconductor layer such that a sidewall of the photoresist pattern is inclined to an upper surface of the substrate, and sequentially etching the upper semiconductor layer, active layer and lower semiconductor layer using the photoresist pattern as an etching mask. With this structure, since the light emitting diode permits light generated in the active layer to be easily emitted to an outside through the sidewalls of the semiconductor layers, it has improved light emitting efficiency.
摘要翻译：本文公开了一种制造发光二极管的方法。该方法包括在衬底上制备衬底，形成下半导体层，有源层和上半导体层，在上半导体层上形成光致抗蚀剂图案，使得光致抗蚀剂图案的侧壁倾斜于衬底，并且使用光致抗蚀剂图案作为蚀刻掩模来顺序蚀刻上半导体层，有源层和下半导体层。利用这种结构，由于发光二极管允许有源层中产生的光通过半导体层的侧壁容易地发射到外部，所以其具有改善的发光效率。

3. 发明授权

US07700960B2 Light emitting diode with ITO layer and method for fabricating the same 有权
标题翻译：具有ITO层的发光二极管及其制造方法
公开(公告)号：US07700960B2
公开(公告)日：2010-04-20
申请号：US12605146
申请日：2009-10-23
申请人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
发明人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
IPC分类号： H01L33/00 , H01L27/15
CPC分类号： H01L33/42 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
摘要翻译：本发明涉及一种具有增强的亮度和发光性能的发光二极管，由于电流扩散到ITO层中的效率的提高，以及制造该发光二极管的方法。根据本发明，在衬底上制造至少一个包括N型半导体层，有源层和P型半导体层的发光单元。本发明的方法包括以下步骤：（a）在P型半导体层的顶表面上形成至少一个具有ITO层的发光单元; （b）通过干蚀刻形成用于在ITO层中布线连接的接触槽; 和（c）用接线连接用导电材料制成的接触连接部分填充接触槽。

4. 发明授权

US07998761B2 Light emitting diode with ITO layer and method for fabricating the same 有权
标题翻译：具有ITO层的发光二极管及其制造方法
公开(公告)号：US07998761B2
公开(公告)日：2011-08-16
申请号：US12088902
申请日：2006-12-08
申请人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
发明人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
摘要翻译：本发明涉及一种具有增强的亮度和发光性能的发光二极管，由于电流扩散到ITO层中的效率的提高，以及制造该发光二极管的方法。根据本发明，在衬底上制造至少一个包括N型半导体层，有源层和P型半导体层的发光单元。本发明的方法包括以下步骤：（a）在P型半导体层的顶表面上形成至少一个具有ITO层的发光单元; （b）通过干蚀刻形成用于在ITO层中布线连接的接触槽; 和（c）用接线连接用导电材料制成的接触连接部分填充接触槽。

5. 发明申请

US20100148190A1 LIGHT EMITTING DIODE WITH ITO LAYER AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有ITO层的发光二极管及其制造方法
公开(公告)号：US20100148190A1
公开(公告)日：2010-06-17
申请号：US12088902
申请日：2006-12-08
申请人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
发明人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
摘要翻译：本发明涉及一种具有增强的亮度和发光性能的发光二极管，由于电流扩散到ITO层中的效率的提高，以及制造该发光二极管的方法。根据本发明，在衬底上制造至少一个包括N型半导体层，有源层和P型半导体层的发光单元。本发明的方法包括以下步骤：（a）在P型半导体层的顶表面上形成至少一个具有ITO层的发光单元; （b）通过干蚀刻形成用于在ITO层中布线连接的接触槽; 和（c）用接线连接用导电材料制成的接触连接部分填充接触槽。

6. 发明授权

US07994523B2 AC light emitting diode having improved transparent electrode structure 有权
标题翻译：交流发光二极管具有改善的透明电极结构
公开(公告)号：US07994523B2
公开(公告)日：2011-08-09
申请号：US12088999
申请日：2006-11-28
申请人： Jae Ho Lee , Yeo Jin Yoon
发明人： Jae Ho Lee , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L25/0753 , H01L33/62 , H01L2224/48
摘要： Disclosed is an AC light emitting diode having an improved transparent electrode structure. The light emitting diode comprises a plurality of light emitting cells formed on a single substrate, each of the light emitting cells having a first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. A transparent electrode structure is positioned on each of the light emitting cells. The transparent electrode structure includes at least two portions separated from each other, or a center portion and branches laterally extending from both sides of the center portion. Meanwhile, wires electrically connect adjacent two of the light emitting cells. Accordingly, a plurality of light emitting cells are electrically connected, whereby a light emitting diode can be provided which can be driven under AC power source. Also, an improved transparent electrode structure is employed, so that the current density can be prevented from being locally increased.
摘要翻译：公开了具有改进的透明电极结构的AC发光二极管。发光二极管包括形成在单个基板上的多个发光单元，每个发光单元具有第一导电型半导体层，位于第一导电型半导体层的一个区域上的第二导电型半导体层，以及插入在第一和第二导电类型半导体层之间的有源层。透明电极结构位于每个发光单元上。透明电极结构包括彼此分离的至少两个部分或中心部分，并且从中心部分的两侧侧向延伸。同时，电线电连接相邻的两个发光单元。因此，多个发光单体电连接，从而可以提供可在交流电源下驱动的发光二极管。此外，采用改进的透明电极结构，从而可以防止电流密度局部增加。

7. 发明授权

US07977691B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07977691B2
公开(公告)日：2011-07-12
申请号：US12630370
申请日：2009-12-03
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
摘要翻译：本发明涉及一种发光器件及其制造方法。根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面或P型半导体层的水平面为20〜80°的斜率。此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体发光单元的层与水平面的倾斜度为20〜80°。此外，本发明提供一种制造发光器件的方法。因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

8. 发明授权

US07951626B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07951626B2
公开(公告)日：2011-05-31
申请号：US12613275
申请日：2009-11-05
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
摘要翻译：本发明涉及一种发光器件及其制造方法。根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面或P型半导体层的水平面为20〜80°的斜率。此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体发光单元的层与水平面的倾斜度为20〜80°。此外，本发明提供一种制造发光器件的方法。因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

9. 发明授权

US07723737B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07723737B2
公开(公告)日：2010-05-25
申请号：US12568630
申请日：2009-09-28
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae-Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae-Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device. According to the present invention, the light emitting device comprises a substrate, a plurality of light emitting cells disposed on the substrate, a first insulation layer disposed on each light emitting cell, an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells, and a second insulation layer disposed on the electrically conductive material. Each light emitting cell comprises a first semiconductor layer, a second semiconductor layer, and an inclined surface. The second insulation layer corresponds to a contour of each light emitting cell.
摘要翻译：本发明涉及一种发光装置。根据本发明，发光器件包括衬底，设置在衬底上的多个发光单元，设置在每个发光单元上的第一绝缘层，设置在第一绝缘层上的导电材料，以将两个所述发光单元以及设置在所述导电材料上的第二绝缘层。每个发光单元包括第一半导体层，第二半导体层和倾斜表面。第二绝缘层对应于每个发光单元的轮廓。

10. 发明申请

US20100006870A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100006870A1
公开(公告)日：2010-01-14
申请号：US12568630
申请日：2009-09-28
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device. According to the present invention, the light emitting device comprises a substrate, a plurality of light emitting cells disposed on the substrate, a first insulation layer disposed on each light emitting cell, an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells, and a second insulation layer disposed on the electrically conductive material. Each light emitting cell comprises a first semiconductor layer, a second semiconductor layer, and an inclined surface. The second insulation layer corresponds to a contour of each light emitting cell.
摘要翻译：本发明涉及一种发光装置。根据本发明，发光器件包括衬底，设置在衬底上的多个发光单元，设置在每个发光单元上的第一绝缘层，设置在第一绝缘层上的导电材料，以将两个所述发光单元以及设置在所述导电材料上的第二绝缘层。每个发光单元包括第一半导体层，第二半导体层和倾斜表面。第二绝缘层对应于每个发光单元的轮廓。

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