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31. 发明授权

US08368094B2 Optoelectronic device 有权
标题翻译：光电器件
公开(公告)号：US08368094B2
公开(公告)日：2013-02-05
申请号：US12813621
申请日：2010-06-11
申请人： Min-Hsun Hsieh , Chien-Yuan Wang , Jin-Ywan Lin , Chiu-Lin Yao
发明人： Min-Hsun Hsieh , Chien-Yuan Wang , Jin-Ywan Lin , Chiu-Lin Yao
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.
摘要翻译：光电子器件包括半导体叠层层; 位于半导体堆叠层上的第一透明导电氧化物（以下简称TCO），其中第一TCO层具有至少一个开口; 以及覆盖所述第一TCO层的第二TCO层，其中所述第二TCO层填充到所述第一TCO层的开口中并与所述半导体堆叠层接触，并且所述第一TCO层和所述第二TCO层中的一个形成欧姆接触与半导体堆叠层。

32. 发明授权

US08274092B2 Light-emitting device having a roughened surface with different topographies 有权
标题翻译：具有不同形貌的粗糙表面的发光器件
公开(公告)号：US08274092B2
公开(公告)日：2012-09-25
申请号：US12905795
申请日：2010-10-15
申请人： Chiu-Lin Yao , To-Cheng Hsu
发明人： Chiu-Lin Yao , To-Cheng Hsu
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/387 , H01L2933/0016
摘要： This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.
摘要翻译：本发明提供一种具有粗糙表面的光电半导体器件及其制造方法。光电子半导体器件包括具有粗糙表面的半导体叠层和覆盖半导体叠层的电极层。粗糙表面包括具有第一形貌的第一区域和具有第二形貌的第二区域。该方法包括以下步骤：在衬底上形成半导体堆叠，在半导体堆叠上形成电极层，热处理半导体堆叠，以及湿蚀刻半导体叠层的表面以形成粗糙表面。

33. 发明申请

US20120061667A1 LIGHT-EMITTING ELEMENT 有权
标题翻译：发光元件
公开(公告)号：US20120061667A1
公开(公告)日：2012-03-15
申请号：US13231250
申请日：2011-09-13
申请人： Chein-Fu Huang , Chao-Hsing CHEN , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
发明人： Chein-Fu Huang , Chao-Hsing CHEN , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号： H01L33/32 , H01L33/26
CPC分类号： H01L27/153 , H01L33/20 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes: a substrate including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on the first surface and between the plurality of light-emitting structure units.
摘要翻译：发光元件包括：基板，包括第一表面和与第一表面不同的第二表面; 设置在所述第二表面上的多个发光结构单元; 以及形成在所述第一表面上和所述多个发光结构单元之间的沟槽。

34. 发明申请

US20120025250A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120025250A1
公开(公告)日：2012-02-02
申请号：US13193970
申请日：2011-07-29
申请人： Min-Hsun Hsieh , Wei-Yu Chen , Li-Ming Chang , Chien-Yuan Wang , Chiu-Lin Yao
发明人： Min-Hsun Hsieh , Wei-Yu Chen , Li-Ming Chang , Chien-Yuan Wang , Chiu-Lin Yao
IPC分类号： H01L33/20
CPC分类号： H01L33/382 , H01L33/24 , H01L33/385 , H01L33/387 , H01L2933/0016
摘要： This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers.
摘要翻译：本申请提供了一种半导体发光器件及其制造方法。半导体发光器件包括半导体发光结构和薄化衬底。半导体发光结构包括多个半导体层和多个第一通道，其中多个第一通道具有穿透多个半导体层的至少两层的预定深度。

35. 发明申请

US20110253979A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110253979A1
公开(公告)日：2011-10-20
申请号：US13170360
申请日：2011-06-28
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L33/06 , H01L33/58
CPC分类号： H01L33/06 , H01L2933/0083
摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
摘要翻译：公开了一种发光器件及其制造方法。发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。光子晶体发光器件可以提高内部效率和光提取效率。

36. 发明授权

US09099612B2 Semiconductor light-emitting device and the manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09099612B2
公开(公告)日：2015-08-04
申请号：US13193970
申请日：2011-07-29
申请人： Min-Hsun Hsieh , Wei-Yu Chen , Li-Ming Chang , Chien-Yuan Wang , Chiu-Lin Yao
发明人： Min-Hsun Hsieh , Wei-Yu Chen , Li-Ming Chang , Chien-Yuan Wang , Chiu-Lin Yao
IPC分类号： H01L33/38 , H01L33/24
CPC分类号： H01L33/382 , H01L33/24 , H01L33/385 , H01L33/387 , H01L2933/0016
摘要： This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers.
摘要翻译：本申请提供了一种半导体发光器件及其制造方法。半导体发光器件包括半导体发光结构和薄化衬底。半导体发光结构包括多个半导体层和多个第一通道，其中多个第一通道具有穿透多个半导体层的至少两层的预定深度。

37. 发明授权

US08890178B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08890178B2
公开(公告)日：2014-11-18
申请号：US13231250
申请日：2011-09-13
申请人： Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
发明人： Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号： H01L29/18 , H01L27/15 , H01L33/22 , H01L33/20 , H01L33/62
CPC分类号： H01L27/153 , H01L33/20 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a monolithic understructure including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on a portion of the first surface and between the plurality of light-emitting structure units, wherein a height of the portion of the first surface is greater than a height of the second surface measured from a bottom of the monolithic understructure, and the portion of the first surface is exposed by the trench.
摘要翻译：发光元件包括：整体式下结构，包括第一表面和与第一表面不同的第二表面; 设置在所述第二表面上的多个发光结构单元; 以及形成在所述第一表面的一部分上并且在所述多个发光结构单元之间的沟槽，其中所述第一表面的所述部分的高度大于从所述整体式下部结构的底部测量的所述第二表面的高度，并且第一表面的部分被沟槽暴露。

38. 发明授权

US08633501B2 Light-emitting device having a patterned surface 有权
标题翻译：具有图案化表面的发光器件
公开(公告)号：US08633501B2
公开(公告)日：2014-01-21
申请号：US12646553
申请日：2009-12-23
申请人： Chen Ou , Chiu-Lin Yao
发明人： Chen Ou , Chiu-Lin Yao
IPC分类号： H01L29/207
CPC分类号： H01L33/20 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/30 , H01L33/32 , H01L2933/0091
摘要： The disclosure provides a light-emitting device comprising a substrate, an intermediate layer formed on the substrate, a first doped semiconductor layer with first conductivity-type formed on the intermediate layer, a second doped semiconductor layer with second conductivity-type formed on the first doped semiconductor layer, an active layer formed between the first doped semiconductor layer and the second doped semiconductor layer, and a patterned surface having a plurality of ordered pattern units; wherein the patterned surface is substantially not parallel to the corresponding region of the surface of the active layer.
摘要翻译：本发明提供一种发光器件，其包括衬底，形成在衬底上的中间层，在中间层上形成的具有第一导电型的第一掺杂半导体层，在第一衬底上形成的具有第二导电类型的第二掺杂半导体层形成在第一掺杂半导体层和第二掺杂半导体层之间的有源层和具有多个有序图案单元的图案化表面; 其中所述图案化表面基本上不平行于所述有源层的表面的相应区域。

39. 发明授权

US08592827B2 Light-emitting device and the manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08592827B2
公开(公告)日：2013-11-26
申请号：US13225640
申请日：2011-09-06
申请人： Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
发明人： Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L27/153 , H01L33/0079 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.
摘要翻译：发光装置包括：载体; 形成在所述载体上的发光结构，其中所述发光结构具有面向所述载体的第一表面，与所述第一表面相对的第二表面，以及在所述第一表面和所述第二表面之间的有源层; 从所述第一表面延伸并穿过所述有源层的多个第一沟槽，以限定多个发光单元; 以及从所述第二表面延伸并穿过所述多个发光单元中的每一个的有源层的多个第二沟槽。

40. 发明授权

US08405107B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08405107B2
公开(公告)日：2013-03-26
申请号：US12979281
申请日：2010-12-27
申请人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
发明人： Chiu-Lin Yao , Min-Hsun Hsieh , Wen-Huang Liu
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , F21K9/00 , H01L25/0753 , H01L27/153 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A light emitting element includes a carrier, a conductive connecting structure disposed on the carrier, an epitaxial stack structure including at least a first lighting stack and a second lighting stack disposed on the conductive connecting structure, an insulation section disposed between the epitaxial stack structure and the conductive connecting structure, and at least a metal line laid on the surface of the light emitting element, wherein the first light emitting stack further includes two electrodes having different polarity formed thereon; the second lighting stack is electrically connected to the conductive connecting structure at the bottom thereof and includes an electrode formed thereon. The insulation section is disposed below the first lighting stack to make the first lighting stack be insulated from the conductive connecting structure. The metal lines and the conductive connecting structure are electrically connected to each of the lighting stacks in parallel connection or series connection.
摘要翻译：发光元件包括载体，布置在载体上的导电连接结构，外延堆叠结构，至少包括设置在导电连接结构上的第一照明堆叠和第二照明堆叠;绝缘部分，设置在外延堆叠结构和所述导电连接结构和至少布置在所述发光元件表面上的金属线，其中所述第一发光层还包括形成在其上的具有不同极性的两个电极; 第二照明堆叠在其底部与导电连接结构电连接并且包括形成在其上的电极。绝缘部分设置在第一照明堆叠的下方，以使第一照明堆叠与导电连接结构绝缘。金属线和导电连接结构以并联或串联连接电连接到每个照明堆叠。

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