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1. 发明授权

US08368094B2 Optoelectronic device 有权
标题翻译：光电器件
公开(公告)号：US08368094B2
公开(公告)日：2013-02-05
申请号：US12813621
申请日：2010-06-11
申请人： Min-Hsun Hsieh , Chien-Yuan Wang , Jin-Ywan Lin , Chiu-Lin Yao
发明人： Min-Hsun Hsieh , Chien-Yuan Wang , Jin-Ywan Lin , Chiu-Lin Yao
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.
摘要翻译：光电子器件包括半导体叠层层; 位于半导体堆叠层上的第一透明导电氧化物（以下简称TCO），其中第一TCO层具有至少一个开口; 以及覆盖所述第一TCO层的第二TCO层，其中所述第二TCO层填充到所述第一TCO层的开口中并与所述半导体堆叠层接触，并且所述第一TCO层和所述第二TCO层中的一个形成欧姆接触与半导体堆叠层。

2. 发明申请

US20100314657A1 OPTOELECTRONIC DEVICE 有权
标题翻译：光电器件
公开(公告)号：US20100314657A1
公开(公告)日：2010-12-16
申请号：US12813621
申请日：2010-06-11
申请人： Min-Hsun Hsieh , Chien-Yuan Wang , Jin-Ywan Lin , Chiu-Lin Yao
发明人： Min-Hsun Hsieh , Chien-Yuan Wang , Jin-Ywan Lin , Chiu-Lin Yao
IPC分类号： H01L33/42
CPC分类号： H01L33/42 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.
摘要翻译：光电子器件包括半导体叠层层; 位于半导体堆叠层上的第一透明导电氧化物（以下简称为“TCO”）层，其中第一TCO层具有至少一个开口; 以及覆盖所述第一TCO层的第二TCO层，其中所述第二TCO层填充到所述第一TCO层的开口中并与所述半导体堆叠层接触，并且所述第一TCO层和所述第二TCO层中的一个形成欧姆接触与半导体堆叠层。

3. 发明授权

US08143636B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08143636B2
公开(公告)日：2012-03-27
申请号：US12620305
申请日：2009-11-17
申请人： Jin-Ywan Lin , Ya-Lang Yang
发明人： Jin-Ywan Lin , Ya-Lang Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/46
摘要： This application discloses a light-emitting device comprising a light-emitting stack layer, a first transparent conductive layer disposed below the light-emitting stack layer, a transparent dielectric barrier layer disposed below the first transparent conductive layer, a second transparent conductive layer disposed below the transparent dielectric barrier layer and a metal reflective layer disposed below the second transparent conductive layer wherein an omni-directional reflector (ODR) comprises the metal reflective layer and the second transparent conductive layer. Besides, the first transparent conductive layer is ohmically connected with the light-emitting stack layer.
摘要翻译：本申请公开了一种发光装置，其包括发光堆叠层，设置在发光堆叠层下方的第一透明导电层，设置在第一透明导电层下方的透明电介质阻挡层，设置在第一透明导电层下方的第二透明导电层所述透明介电阻挡层和设置在所述第二透明导电层下方的金属反射层，其中全向反射器（ODR）包括所述金属反射层和所述第二透明导电层。此外，第一透明导电层与发光堆叠层欧姆连接。

4. 发明授权

US08692273B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08692273B2
公开(公告)日：2014-04-08
申请号：US13429852
申请日：2012-03-26
申请人： Jin-Ywan Lin , Ya-Lang Yang
发明人： Jin-Ywan Lin , Ya-Lang Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/46
摘要： The present application is to provide a light-emitting device comprising a metal reflective layer; a first transparent conductive oxide layer having a first refractive index; a second transparent conductive oxide layer having a second refractive index different from the first refractive index, and being between the metal reflective layer and the first transparent conductive oxide layer; and a light-emitting stack layer electrically connected to the second transparent conductive oxide layer substantially through the first transparent conductive layer; wherein there is no light absorbing material between the metal reflective layer and the first transparent conductive oxide layer.
摘要翻译：本申请是提供一种包括金属反射层的发光器件; 具有第一折射率的第一透明导电氧化物层; 第二透明导电氧化物层，其具有与第一折射率不同的第二折射率，并且在金属反射层和第一透明导电氧化物层之间; 以及基本上通过第一透明导电层与第二透明导电氧化物层电连接的发光层叠层; 其中在金属反射层和第一透明导电氧化物层之间不存在吸光材料。

5. 再颁专利

USRE43411E1 Series connection of two light emitting diodes through semiconductor manufacture process 有权
标题翻译：通过半导体制造工艺串联两个发光二极管
公开(公告)号：USRE43411E1
公开(公告)日：2012-05-29
申请号：US12071055
申请日：2008-02-14
申请人： Jin-Ywan Lin , Chuan-Cheng Tu
发明人： Jin-Ywan Lin , Chuan-Cheng Tu
IPC分类号： H01L27/15 , H01L31/12
CPC分类号： H01L27/153
摘要： A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer. Two n-type electrodes are formed on the lower cladding layer of two LEDs. A dielectric layer is deposited to fill the isolation trench and covered a sidewall of the first trench so that it can electrically isolate layers of the stack layers of the second LED while a metal connection trace formed thereon to connect the p-type ohmic contact electrode of the first LED and n-type of ohmic electrode of second LED.
摘要翻译：公开了具有串联连接的两个发光二极管的半导体结构。半导体结构包括具有相同叠层的两个发光二极管（LED），并且彼此邻接但隔开隔离沟槽。来自底部的堆叠层包括导热基板，非导电保护层，金属粘合层，镜保护层，p型欧姆接触外延层，上覆层，有源层和下层包层在镜保护层和欧姆接触外延层之间的界面上形成两个用于两个LED的p型欧姆接触金属电极，并被埋在镜保护层中。堆叠层具有形成在其中的第一沟槽，其暴露上覆层和电连接沟道以连接p型电极。通过图案化暴露的上覆层形成隔离沟槽，直到进一步暴露非导电保护层。两个n型电极形成在两个LED的下包层上。沉积介电层以填充隔离沟槽并且覆盖第一沟槽的侧壁，使得其可以电隔离第二LED的层叠层，同时形成在其上的金属连接迹线以将p型欧姆接触电极第二个LED的第一个LED和n型欧姆电极。

6. 发明授权

US08067780B2 Light emitting device and the manufacture method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08067780B2
公开(公告)日：2011-11-29
申请号：US11896661
申请日：2007-09-05
申请人： Yuh-Ren Shieh , Hsuan-Cheng Fan , Jin-Ywan Lin , Cheng-Yi Hsu , Chung-Kuei Huang
发明人： Yuh-Ren Shieh , Hsuan-Cheng Fan , Jin-Ywan Lin , Cheng-Yi Hsu , Chung-Kuei Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2933/0016 , H01L2224/05599 , H01L2224/05099
摘要： This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed so as to improve the heat dissipation efficiency of the light-emitting device.
摘要翻译：本发明提供一种发光元件及其制造方法。发光元件适用于倒装芯片接合，并且包括具有多个用于直接接合到基座的微型突起的电极。可以形成在发光装置与底座之间的较短距离内的结合，以提高发光装置的散热效率。

7. 发明申请

US20090200560A1 Light emitting device and method of forming the same 有权
标题翻译：发光元件及其形成方法
公开(公告)号：US20090200560A1
公开(公告)日：2009-08-13
申请号：US12320085
申请日：2009-01-16
申请人： Jin-Ywan Lin , Chuan-Cheng Tu
发明人： Jin-Ywan Lin , Chuan-Cheng Tu
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/0079 , H01L33/382
摘要： An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.
摘要翻译：本发明的实施例公开了一种包括第一多层结构的发光器件，包括第一下层; 第一上层; 以及第一有源层，其能够在偏置电压下发光并且定位在所述第一下层和所述第一上层之间; 与所述第一多层结构相邻的第二厚层; 与第二厚层相关联的第二连接层; 电连接到第二连接层和第一多层结构的连接线; 底物; 以及在第一多层结构和衬底之间的两个或更多个欧姆接触电极。

8. 发明申请

US20050062049A1 Series connection of two light emitting diodes through semiconductor manufacture process 有权
标题翻译：通过半导体制造工艺串联两个发光二极管
公开(公告)号：US20050062049A1
公开(公告)日：2005-03-24
申请号：US10878359
申请日：2004-06-29
申请人： Jin-Ywan Lin , Chung-Cheng Tu
发明人： Jin-Ywan Lin , Chung-Cheng Tu
IPC分类号： H01L27/15 , H01L33/08 , H01L33/30
CPC分类号： H01L27/153
摘要： A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer. Two n-type electrodes are formed on the lower cladding layer of two LEDs. A dielectric layer is deposited to fill the isolation trench and covered a sidewall of the first trench so that it can electrically isolate layers of the stack layers of the second LED while a metal connection trace formed thereon to connect the p-type ohmic contact electrode of the first LED and n-type of ohmic electrode of second LED.
摘要翻译：公开了具有串联连接的两个发光二极管的半导体结构。半导体结构包括具有相同叠层的两个发光二极管（LED），并且彼此邻接但隔开隔离沟槽。来自底部的堆叠层包括导热基板，非导电保护层，金属粘合层，镜保护层，p型欧姆接触外延层，上覆层，有源层和下层包层在镜保护层和欧姆接触外延层之间的界面上形成两个用于两个LED的p型欧姆接触金属电极，并被埋在镜保护层中。堆叠层具有形成在其中的第一沟槽，其暴露上覆层和电连接沟道以连接p型电极。通过图案化暴露的上覆层形成隔离沟槽，直到进一步暴露非导电保护层。两个n型电极形成在两个LED的下包层上。沉积介电层以填充隔离沟槽并且覆盖第一沟槽的侧壁，使得其可以电隔离第二LED的层叠层，同时形成在其上的金属连接迹线以将p型欧姆接触电极第二个LED的第一个LED和n型欧姆电极。

9. 发明授权

US08664686B2 Light emitting device and the manufacture method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08664686B2
公开(公告)日：2014-03-04
申请号：US13281136
申请日：2011-10-25
申请人： Yuh-Ren Shieh , Hsuan-Cheng Fan , Jin-Ywan Lin , Cheng-Yi Hsu , Chung-Kuei Huang
发明人： Yuh-Ren Shieh , Hsuan-Cheng Fan , Jin-Ywan Lin , Cheng-Yi Hsu , Chung-Kuei Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2933/0016 , H01L2224/05599 , H01L2224/05099
摘要： This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed so as to improve the heat dissipation efficiency of the light-emitting device.
摘要翻译：本发明提供一种发光元件及其制造方法。发光元件适用于倒装芯片接合，并且包括具有多个用于直接接合到基座的微型突起的电极。可以形成在发光装置与底座之间的较短距离内的结合，以提高发光装置的散热效率。

10. 发明授权

US08101959B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08101959B2
公开(公告)日：2012-01-24
申请号：US12893181
申请日：2010-09-29
申请人： Jin-Ywan Lin , Chuan-Cheng Tu
发明人： Jin-Ywan Lin , Chuan-Cheng Tu
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/0079 , H01L33/382
摘要： An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.
摘要翻译：本发明的实施例公开了一种包括第一多层结构的发光器件，包括第一下层; 第一上层; 以及第一有源层，其能够在偏置电压下发光并且定位在所述第一下层和所述第一上层之间; 与所述第一多层结构相邻的第二厚层; 与第二厚层相关联的第二连接层; 电连接到第二连接层和第一多层结构的连接线; 底物; 以及在第一多层结构和衬底之间的两个或更多个欧姆接触电极。

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