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31. 发明授权

US5614252A Method of fabricating barium strontium titanate 失效
标题翻译：制造钛酸钡锶的方法
公开(公告)号：US5614252A
公开(公告)日：1997-03-25
申请号：US478398
申请日：1995-06-07
申请人： Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , B05D5/12
CPC分类号： B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/409 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/1295 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H01L41/1871 , H05K3/105
摘要： A precursor liquid comprising barium and strontium 2-ethylhexanoates and titanium 2-methoxyethanol in a 2-methoxyethanol solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of barium strontium titanate on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.
摘要翻译：制备在2-甲氧基乙醇溶剂中包含钡和2-乙基己酸锶的前体液体和2-甲氧基乙醇钛，将底物置于真空沉积室内，使前体液体雾化，并将雾流入沉积室，同时将室保持在环境温度下以将一层前体液体沉积在基底上。将液体干燥，烘烤和退火以在基材上形成钛酸钡锶薄膜。然后，完成集成电路以将集成电路的部件中的至少一部分分层超晶格材料膜包括在内。

32. 发明授权

US5559733A Memory with ferroelectric capacitor connectable to transistor gate 失效
标题翻译：具有可连接到晶体管栅极的铁电电容器的存储器
公开(公告)号：US5559733A
公开(公告)日：1996-09-24
申请号：US482765
申请日：1995-06-07
申请人： Larry D. McMillan , Takashi Mihara , Hiroyuki Yoshimori , John W. Gregory , Carlos A. Paz de Araujo
发明人： Larry D. McMillan , Takashi Mihara , Hiroyuki Yoshimori , John W. Gregory , Carlos A. Paz de Araujo
IPC分类号： G11C14/00 , G11C11/22 , H01L21/8242 , H01L21/8247 , H01L27/10 , H01L27/108 , H01L29/788 , H01L29/792
CPC分类号： G11C11/22 , G11C11/223
摘要： A ferroelectric memory includes a constant voltage source, a capacitor having first and second electrodes, and a transistor having a gate. A switch alternately connects the gate of the transistor to the first electrode and the constant voltage source. In another embodiment, there are two ferroelectric transistors, and the first electrode of each capacitor is connected both to the gate of the transistor and to a voltage source external of the memory.
摘要翻译：铁电存储器包括恒压源，具有第一和第二电极的电容器和具有栅极的晶体管。开关将晶体管的栅极交替地连接到第一电极和恒定电压源。在另一实施例中，存在两个铁电晶体管，并且每个电容器的第一电极都连接到晶体管的栅极和存储器外部的电压源。

33. 发明授权

US5487032A Method and apparatus for reduced fatigue in ferroelectric memory elements 失效
标题翻译：铁电存储元件疲劳减少的方法和装置
公开(公告)号：US5487032A
公开(公告)日：1996-01-23
申请号：US338003
申请日：1994-11-10
申请人： Takashi Mihara , Hitoshi Watanabe , Hiroyuki Yoshimori , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Takashi Mihara , Hitoshi Watanabe , Hiroyuki Yoshimori , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A method and apparatus for programming ferroelectric memory cells which reduces fatigue effects of switching polarization of the ferroelectric devices associated with the memory cells such as ferroelectric capacitors and transistors. Alteration of the rise AC fall times associated with signals used to switch ferroelectric device polarization are shown to reduce fatigue of the ferroelectric material thereby increasing the useful life of ferroelectric memory cells. Slowing the rise and fall times as well as the rate of signal level rise and fall, (signal shape), are shown to reduce the fatigue effects of switching polarization of ferroelectric devices. Methods and apparatus for producing a triangular ("sawtooth") signal waveform, a Gaussian signal waveform, and a waveform having exponential rise and fall times are disclosed.
摘要翻译：一种用于编程铁电存储器单元的方法和装置，其减少与诸如铁电电容器和晶体管之类的存储单元相关联的铁电体器件的开关极化的疲劳效应。示出了与用于切换铁电体器件极化的信号相关联的上升AC下降时间的变化，以减少铁电材料的疲劳，从而增加铁电存储器单元的使用寿命。降低上升和下降时间以及信号电平上升和下降（信号形状）的速率，可以减少铁电元件开关极化的疲劳效应。公开了用于产生三角形（“锯齿”）信号波形，高斯信号波形和具有指数上升和下降时间的波形的方法和装置。

34. 发明授权

US5119760A Methods and apparatus for material deposition 失效
标题翻译：材料沉积的方法和装置
公开(公告)号：US5119760A
公开(公告)日：1992-06-09
申请号：US470800
申请日：1990-01-26
申请人： Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316
CPC分类号： C23C16/4558 , C23C16/4412 , C23C16/448 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/31691 , H01L28/56
摘要： The present invention discloses methods and apparatus for depositing thin films of complex (compound) materials, including ferroelectrics, superconductors, and materials with high dielectric constants through a technique which is hereby entitled photo-enhanced chemical vapor deposition and activation (PECVDA). The technique involves the use of multiple heating sources including a resistive heat bias heater, a tuned optical source (UV or laser) and a source (halogen lamps or microwave sources) for applying high energy, rapid thermal pulses in a precise time sequence.
摘要翻译：本发明公开了通过本文题目为光增强化学气相沉积和激活（PECVDA）的技术，沉积具有高介电常数的铁电体，超导体和材料的复合（复合）材料的薄膜的方法和装置。该技术包括使用多个加热源，包括电阻式热偏置加热器，调谐光源（UV或激光）和源（卤素灯或微波源），用于以精确的时间顺序施加高能量快速热脉冲。

35. 发明授权

US07187079B2 Stacked memory cell having diffusion barriers 有权
标题翻译：具有扩散阻挡层的堆积式存储单元
公开(公告)号：US07187079B2
公开(公告)日：2007-03-06
申请号：US10666381
申请日：2003-09-19
申请人： Vikram Joshi , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Vikram Joshi , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L23/48
CPC分类号： H01L27/11502 , C30B29/32 , C30B29/68 , H01L23/642 , H01L27/11507 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A nonconductive hydrogen barrier layer is deposited on a substrate and completely covers the surface area over a memory capacitor and a MOSFET switch of an integrated circuit memory cell. A portion of an insulator layer adjacent to the bottom electrode of a memory capacitor is removed by etching to form a moat region. A nonconductive oxygen barrier layer is deposited to cover the sidewall and bottom of the moat. The nonconductive oxygen barrier layer and a conductive diffusion barrier beneath the capacitor together provide a substantially continuous diffusion barrier between the capacitor and a switch. Also, the nonconductive hydrogen barrier layer, the nonconductive oxygen barrier, and the conductive diffusion barrier substantially completely envelop the capacitor, in particular a ferroelectric thin film in the capacitor.
摘要翻译：非导电氢阻挡层沉积在基板上并完全覆盖集成电路存储单元的存储电容器和MOSFET开关上的表面积。通过蚀刻去除与存储电容器的底部电极相邻的绝缘体层的一部分，以形成护城河区域。沉积非导电氧阻隔层以覆盖护城河的侧壁和底部。电容器下面的非导电氧阻挡层和导电扩散阻挡层一起在电容器和开关之间提供基本上连续的扩散阻挡层。此外，非导电氢阻挡层，非导电氧阻挡层和导电扩散阻挡层基本上完全包围电容器，特别是电容器中的铁电薄膜。

36. 发明授权

US07064374B2 Barrier layers for protecting metal oxides from hydrogen degradation 有权
公开(公告)号：US07064374B2
公开(公告)日：2006-06-20
申请号：US10872895
申请日：2004-06-21
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27/108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.

37. 发明授权

US06996000B2 Non-volatile ferroelectric SRAM 有权
标题翻译：非易失性铁电SRAM
公开(公告)号：US06996000B2
公开(公告)日：2006-02-07
申请号：US10961429
申请日：2004-10-07
申请人： Zheng Chen , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Zheng Chen , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： G11C7/00
CPC分类号： G11C11/22
摘要： A non-volatile SRAM memory comprising a plurality of memory cells, each memory cell including a SRAM memory cell portion and a ferroelectric memory cell portion including a ferroelectric element, the ferroelectric memory cell portion including a switch system for permitting the ferroelectric element to be isolated from the ferroelectric elements in all other memory cells.
摘要翻译：一种包括多个存储单元的非易失性SRAM存储器，每个存储单元包括一个SRAM存储单元部分和一个包括铁电元件的铁电存储单元部分，该铁电存储单元部分包括用于允许该铁电元件被隔离的开关系统从所有其他记忆单元中的铁电元件。

38. 发明授权

US06831313B2 Ferroelectric composite material, method of making same and memory utilizing same 失效
标题翻译：铁电复合材料，制造方法和利用其的记忆
公开(公告)号：US06831313B2
公开(公告)日：2004-12-14
申请号：US10332481
申请日：2003-07-22
申请人： Kiyoshi Uchiyama , Carlos A. Paz de Araujo , Vikram Joshi , Narayan Solayappan , Jolanta Celinska , Larry D. McMillan
发明人： Kiyoshi Uchiyama , Carlos A. Paz de Araujo , Vikram Joshi , Narayan Solayappan , Jolanta Celinska , Larry D. McMillan
IPC分类号： H01L2972
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02282 , H01L21/28291 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要： A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.
摘要翻译：铁电存储器（436）包括多个存储单元（73,82,100），每个存储单元包含具有铁电元件（18）和电介质元件（19）的显微复合材料的铁电薄膜（15），所述电介质组分是与铁电体组分不同的化合物。电介质成分优选为磁通量，即具有比铁电体成分高的结晶速度的材料。添加磁通管允许铁电薄膜在400℃和550℃之间的温度下结晶。

39. 发明授权

US06437380B1 Ferroelectric device with bismuth tantalate capping layer and method of making same 失效
标题翻译：具有钽酸铋盖层的铁电元件及其制造方法
公开(公告)号：US06437380B1
公开(公告)日：2002-08-20
申请号：US09819542
申请日：2001-03-28
申请人： Myoungho Lim , Vikram Joshi , Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Myoungho Lim , Vikram Joshi , Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L29/516 , H01L28/56
摘要： An integrated circuit device includes a thin film of bismuth-containing layered superlattice material having a thickness not exceeding 100 nm, a capping layer thin film of bismuth tantalate, and an electrode. The capping layer has a thickness in a range of from 3 nm to 30 nm and is deposited between the thin film of layered superlattice material and the electrode to increase dielectric breakdown voltage. Preferably the capping layer contains an excess amount of bismuth relative to the stoichiometrically balanced amount represented by the balanced stoichiometric formula BiTaO4. Preferably, the layered superlattice material is ferroelectric SBT or SBTN. Preferably, the integrated circuit device is a nonvolatile ferroelectric memory. Heating treatments for fabrication of the integrated circuit device containing the bismuth tantalate capping layerare conducted at temperatures not exceeding 700° C., preferably in a range of from 650° C. to 700° C.
摘要翻译：集成电路器件包括厚度不超过100nm的含铋层状超晶格材料薄膜，钽酸铋覆盖层薄膜和电极。覆盖层的厚度在3nm至30nm的范围内，并且沉积在层状超晶格材料的薄膜和电极之间以增加介电击穿电压。优选地，封盖层相对于由平衡化学计量式BiTaO 4表示的化学计量平衡量含有过量的铋。优选地，层状超晶格材料是铁电SBT或SBTN。优选地，集成电路器件是非易失性铁电存储器。用于制造包含钽酸铋覆盖层的集成电路器件的加热处理在不超过700℃的温度下进行，优选在650℃至700℃的范围内。

40. 发明授权

US06413883B1 Method of liquid deposition by selection of liquid viscosity and other precursor properties 有权
标题翻译：通过选择液体粘度和其他前体性质进行液体沉积的方法
公开(公告)号：US06413883B1
公开(公告)日：2002-07-02
申请号：US09243254
申请日：1999-02-03
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2131
CPC分类号： C23C18/1216 , C23C18/1291 , C23C18/14 , H01L21/02197 , H01L21/02282 , H01L21/02348 , H01L21/31691
摘要： A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.
摘要翻译：将多个液体，每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。通过调节体积流量控制器来调节前体液体的物理性质，使得当将前体施加到基底并进行处理时，所得到的固体材料薄膜具有平滑和平坦的表面。通常，物理性质是前体的粘度，其被选择为相对较低，在1-2厘泊的范围内。

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