专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20090252667A1 RARE EARTH-ACTIVATED ALUMINUM NITRIDE POWDERS AND METHOD OF MAKING 有权
标题翻译：稀土激活的氮化铝粉及其制备方法
公开(公告)号：US20090252667A1
公开(公告)日：2009-10-08
申请号：US12161017
申请日：2006-12-20
申请人： Bing Han , Jonathan H. Tao , Madis Raukas , Keith A. Klinedinst , Jan B. Talbot , Kailash A. Mishra
发明人： Bing Han , Jonathan H. Tao , Madis Raukas , Keith A. Klinedinst , Jan B. Talbot , Kailash A. Mishra
IPC分类号： C01F17/00
CPC分类号： C04B35/581 , C01B21/072 , C01P2002/52 , C01P2002/54 , C01P2002/84 , C04B2235/3224 , C04B2235/465 , C04B2235/9661 , C09K11/0883 , C09K11/7706 , C09K11/7734 , C09K11/7749 , C09K11/7792
摘要： Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an ammonium metal fluoride, preferably a rare earth-substituted ammonium aluminum hexafluoride ((NH4)3Al1-xRExF6), and finally the rare earth-activated aluminum nitride is formed by ammonolysis of the ammonium metal fluoride at a high temperature. The use of a fluoride precursor in this process avoids sources of oxygen during the final ammonolysis step which is a major source of defects in the powder synthesis of nitrides. Also, because the aluminum nitride is formed from a mixed hydroxide co-precipitate, the distribution of the dopants in the powder is substantially homogeneous in each particle.
摘要翻译：稀土活化的氮化铝粉末是使用溶液型方法制成的，以形成铝和稀土金属的混合氢氧化物，然后将混合氢氧化物转化为铵金属氟化物，优选稀土取代的六氟化铵铵（（NH4）3Al1-xRExF6），最后通过高温铵金属氟化物的氨解形成稀土活化的氮化铝。在该方法中使用氟化物前体在最终氨解步骤期间避免氧的来源，其是氮化物的粉末合成中的主要缺陷来源。此外，由于氮化铝由混合氢氧化物共沉淀物形成，粉末中的掺杂剂的分布在每个颗粒中基本上是均匀的。

32. 发明授权

US08906455B2 Low temperature deposition of silicon-containing films 有权
标题翻译：含硅薄膜的低温沉积
公开(公告)号：US08906455B2
公开(公告)日：2014-12-09
申请号：US13624190
申请日：2012-09-21
申请人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Hansong Cheng
发明人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Hansong Cheng
IPC分类号： C23C16/00 , H01L21/02 , H01L21/316 , H01L21/318 , C23C16/34 , H01L21/314 , C23C16/40 , C23C16/455 , C23C16/30
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3145 , H01L21/31608 , H01L21/31633 , H01L21/3185
摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
摘要翻译：本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

33. 发明申请

US20140347610A1 Color Filter Substrate and Liquid Crystal Display Panel Made Therefrom 有权
标题翻译：彩色滤光片基板和液晶显示屏
公开(公告)号：US20140347610A1
公开(公告)日：2014-11-27
申请号：US13985289
申请日：2013-06-28
申请人： Bing Han , Shih-hsun Lo , Zuomin Liao
发明人： Bing Han , Shih-hsun Lo , Zuomin Liao
IPC分类号： G02F1/1335 , G02B5/20
CPC分类号： G02F1/133512 , G02B5/201 , G02F1/133514 , G02F1/1343 , G02F2201/121
摘要： The present invention discloses a color filter substrate and a liquid crystal panel. The color filter substrate includes a substrate a transparent conductive film, a black array, and an auxiliary conductive layer. Wherein the black array is arranged on the substrate and the transparent conductive film is disposed on the black array. Wherein the auxiliary conductive layer is disposed over a surface of the substrate facing the black array, and has at least portions arranged between the substrate and the black array. By these arrangements, the present invention can effectively reduce the brightness interference of the liquid crystal panel, while increasing the adhesion of the auxiliary conductive layer in addition, this arrangement can effectively avoid the damage to the transparent conductive film by the auxiliary conductive layer.
摘要翻译：本发明公开了一种滤色器基板和液晶面板。滤色器基板包括基板，透明导电膜，黑色阵列和辅助导电层。其中黑色阵列布置在基板上，并且透明导电膜设置在黑色阵列上。其中辅助导电层设置在面向黑色阵列的衬底的表面上，并且具有布置在衬底和黑色阵列之间的至少部分。通过这些布置，本发明可以有效地降低液晶面板的亮度干扰，同时增加辅助导电层的附着力，这种布置可以有效地避免辅助导电层对透明导电膜的损坏。

34. 发明申请

US20140287164A1 COMPOSITIONS AND PROCESSES FOR DEPOSITING CARBON-DOPED SILICON-CONTAINING FILMS 有权
标题翻译：用于沉积含碳硅的膜的组合物和方法
公开(公告)号：US20140287164A1
公开(公告)日：2014-09-25
申请号：US14122825
申请日：2012-06-01
申请人： Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Haripin Chandra , Eugene Joseph Karwacki, JR. , Bing Han , Mark Leonard O'Neill
发明人： Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Haripin Chandra , Eugene Joseph Karwacki, JR. , Bing Han , Mark Leonard O'Neill
IPC分类号： C09D5/00 , C23C16/34 , C23C16/40
CPC分类号： H01L21/02211 , C07F7/0896 , C07F7/10 , C09D5/00 , C09D7/63 , C23C16/30 , C23C16/345 , C23C16/401 , C23C16/45553 , H01L21/02126 , H01L21/0228
摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
摘要翻译：本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和等离子增强CCVD（PECCVD）。

35. 发明申请

US20130078392A1 HALOGENATED ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME 有权
标题翻译：用于沉积包含其的膜的前体和前体的方法
公开(公告)号：US20130078392A1
公开(公告)日：2013-03-28
申请号：US13622117
申请日：2012-09-18
申请人： Manchao Xiao , Xinjian Lei , Mark Leonard O'Neill , Bing Han , Ronald Martin Pearlstein , Haripin Chandra , Heather Regina Bowen , Agnes Derecskei-Kovacs
发明人： Manchao Xiao , Xinjian Lei , Mark Leonard O'Neill , Bing Han , Ronald Martin Pearlstein , Haripin Chandra , Heather Regina Bowen , Agnes Derecskei-Kovacs
IPC分类号： C07F7/02
CPC分类号： C07F7/025 , C07F7/12 , C23C16/402 , C23C16/45536 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228 , H01L21/02532 , H01L21/0262
摘要： Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.
摘要翻译：这里描述的是形成膜的前体和方法。一方面，提供了具有式I的前体：XmR1nHpSi（NR2R3）4-m-n-p1其中X选自Cl，Br，I; R 1选自直链或支链C 1 -C 10烷基，C 2 -C 12烯基，C 2 -C 12炔基，C 4 -C 10环烷基和C 6 -C 10芳基; R2选自直链或支链C1-C10烷基，C3-C12烯基，C3-C12炔基，C4-C10环烷基和C6-C10芳基; R3选自支链C 3 -C 10烷基，C 3 -C 12烯基，C 3 -C 12炔基，C 4 -C 10环烷基和C 6 -C 10芳基; m为1或2; n为0,1或2; p为0,1或2; 并且m + n + p小于4，其中R2和R3连接或未连接形成环。

36. 发明授权

US07999355B2 Aminosilanes for shallow trench isolation films 有权
标题翻译：用于浅沟槽隔离膜的氨基硅烷
公开(公告)号：US07999355B2
公开(公告)日：2011-08-16
申请号：US12492201
申请日：2009-06-26
申请人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Bing Han , Hansong Cheng , Manchao Xiao , Chia-Chien Lee
发明人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Bing Han , Hansong Cheng , Manchao Xiao , Chia-Chien Lee
IPC分类号： H01L21/3105
CPC分类号： H01L21/3121 , C23C18/122 , C23C18/1245 , C23C18/14 , H01L21/02164 , H01L21/02219 , H01L21/02282 , H01L21/316
摘要： The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.
摘要翻译：本发明是一种用于在氧化条件下用于间隙填充的含二氧化硅的膜的沉积方法，用于在存储器和含逻辑电路的半导体衬底中使用的浅沟槽隔离的高纵横比特征中，例如具有包含其中的一个或多个集成电路结构，包括以下步骤：提供具有高纵横比特征的半导体衬底; 使半导体衬底与包含低分子量氨基硅烷的液体制剂接触; 通过在半导体衬底上铺展液体制剂形成膜; 在氧化条件下在升高的温度下加热薄膜。还介绍了这一过程的组成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式