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31. 发明申请

US20050001353A1 Porcess for producing resin roll 有权
标题翻译：生产树脂辊的生产线
公开(公告)号：US20050001353A1
公开(公告)日：2005-01-06
申请号：US10491417
申请日：2002-09-25
申请人： Kenjiro Nakayama , Atsuo Watanabe , Tetsuya Murakami
发明人： Kenjiro Nakayama , Atsuo Watanabe , Tetsuya Murakami
IPC分类号： B21B27/02 , B29C35/02 , B29C63/18 , B29C63/48 , B29C65/48 , B29C65/54 , B29L31/32 , B41N7/00 , D21G1/00 , B29C39/10
CPC分类号： B41N7/00 , B29C35/02 , B29C63/18 , B29C65/44 , B29C65/4835 , B29C65/5014 , B29C65/5021 , B29C65/5028 , B29C65/5057 , B29C65/54 , B29C66/1122 , B29C66/52272 , B29C66/71 , B29C66/72321 , B29C66/73112 , B29C66/73161 , B29C66/73755 , B29C66/7394 , B29C66/742 , B29C66/74283 , B29C66/91411 , B29C66/91445 , B29C2063/485 , B29L2009/003 , B29L2031/324 , B41N2207/02 , B41N2207/04 , B41N2207/14 , D21G1/0233 , Y10T156/1089 , B29K2063/00 , B29K2049/00 , B29K2067/00 , B29K2067/06 , B29K2075/00 , B29K2077/00
摘要： A basic manufacturing method of a resin roll includes a procedure in which a synthetic resin outer cylinder (1) molded in the shape of a cylinder is arranged so as to cover an outer surface of a metal core (2), a clearance formed between metal core (2) and outer cylinder 1 is filled with a thermoset adhesive (3), and adhesive (3) is hardened to integrate the constituents into one piece through bonding. The manufacturing method of a resin roll has a feature in that integration of the constituents into one piece through bonding is performed by first hardening of the adhesive in a state where outer cylinder (1) is held at a first temperature and adhesive (3) is thereafter heated at a second temperature higher than the first temperature for second hardening.
摘要翻译：树脂辊的基本制造方法包括以圆筒形成的合成树脂外筒（1）布置成覆盖金属芯（2）的外表面的过程，金属芯部（2）和外筒1填充有热固性粘合剂（3），并且粘合剂（3）被硬化以通过结合将组分整合成一体。树脂辊的制造方法的特征在于，通过在将外筒（1）保持在第一温度的状态下将粘合剂第一次硬化并且粘合剂（3）为然后在高于第一温度的第二温度下加热以进行第二硬化。

32. 发明授权

US06657257B2 Insulated gate field effect transistor and semiconductor integrated circuit 有权
标题翻译：绝缘栅场效应晶体管和半导体集成电路
公开(公告)号：US06657257B2
公开(公告)日：2003-12-02
申请号：US09829582
申请日：2001-04-09
申请人： Takasumi Ohyanagi , Atsuo Watanabe
发明人： Takasumi Ohyanagi , Atsuo Watanabe
IPC分类号： H01L2701
CPC分类号： H01L21/84 , H01L27/1203 , H01L29/0878 , H01L29/42368 , H01L29/66681 , H01L29/7817 , H01L29/7824
摘要： According to the present invention, there is provided an N-type insulated gate field effect transistor using an SOI substrate of which Si layer as a device formation area is N-type. The SOI substrate provided as the device formation area has the N-type semiconductor region, which has an impurity concentration higher than the impurity concentration of the device formation area, formed so that the N-type semiconductor region is contacted to a part of a gate insulating film and a field silicon oxide film formed between a source electrode and a drain electrode, and extends to be contacted to the N-type semiconductor diffusion layer contacted to the drain electrode. According to the above arrangement, the on-state breakdown can be remarkably improved.
摘要翻译：根据本发明，提供一种使用其作为器件形成区域的Si层作为N型的SOI衬底的N型绝缘栅场效应晶体管。作为器件形成区域提供的SOI衬底具有N型半导体区域，其具有高于器件形成区域的杂质浓度的杂质浓度，以使得N型半导体区域与栅极的一部分接触绝缘膜和在源电极和漏电极之间形成的场氧化硅膜，并且延伸以与与漏电极接触的N型半导体扩散层接触。根据上述结构，可以显着提高导通状态的故障。

33. 发明授权

US06445055B1 Semiconductor integrated circuit device and manufacturing method thereof 有权
公开(公告)号：US06445055B1
公开(公告)日：2002-09-03
申请号：US09924588
申请日：2001-08-09
申请人： Takayuki Iwasakii , Yusuke Takeuchi , Yoshiaki Yuyama , Shinichi Tanabe , Koki Sakai , Minehiro Nemoto , Seigo Yukutake , Yasuyuki Kojima , Atsuo Watanabe , Mitsuaki Horiuchi
发明人： Takayuki Iwasakii , Yusuke Takeuchi , Yoshiaki Yuyama , Shinichi Tanabe , Koki Sakai , Minehiro Nemoto , Seigo Yukutake , Yasuyuki Kojima , Atsuo Watanabe , Mitsuaki Horiuchi
IPC分类号： H01L2900
摘要： A circuit region 2 on a main surface of an SOI substrate, and a isolating region 9b defined by insulating isolation trenches 4a and 4b are connected by a wiring resistor, or a diffused resistor 11a in the SOI substrate. The isolating region 9b and an intermediate region 9 are connected by a wiring resistor, or a diffused resistor 11b in the SOI substrate. Furthermore, a circuit region 3 on a main surface of an SOI substrate, and a isolating region 9c defined by insulating isolation trenches 4c and 4d are connected by a wiring resistor, or a diffused resistor 11d in the SOI substrate. The isolating region 9c and an intermediate region 9 are connected by a wiring resistor, or a diffused resistor 11c in the SOI substrate. As a result, distribution of voltage applied between the circuit regions 2 and 3 by the wiring resistors or the diffused resistors 11a to 11d can increase the withstand voltage of a semiconductor integrated circuit.

34. 发明授权

US5710442A Semiconductor device and method of manufacturing same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5710442A
公开(公告)日：1998-01-20
申请号：US589637
申请日：1996-01-22
申请人： Atsuo Watanabe , Katsuaki Saito
发明人： Atsuo Watanabe , Katsuaki Saito
IPC分类号： H01L21/332 , H01L29/06 , H01L29/10 , H01L29/74 , H01W29/74 , H01L31/111
CPC分类号： H01L29/74 , H01L29/0615 , H01L29/0661 , H01L29/102 , H01L29/0834
摘要： A semiconductor device sets an impurity density of a p base layer in a bevel end-face region to a density lower than that in an operating region and has a parasitic channel preventive region provided between the bevel end-face region and the operating region. Since the blocking-voltage and the current-carrying capacity can be adjusted independently from each other, the blocking voltage and the current-carrying capacity can be both improved.
摘要翻译：半导体器件将斜面端面区域中的p基层的杂质浓度设定为低于工作区域的密度，并且具有设置在斜面端面区域与工作区域之间的寄生沟道防止区域。由于阻断电压和载流能力可以彼此独立地调节，因此可以改善阻断电压和载流能力。

35. 发明授权

US5607866A Method of fabricating a semiconductor device having silicide layers for electrodes 失效
标题翻译：制造具有用于电极的硅化物层的半导体器件的方法
公开(公告)号：US5607866A
公开(公告)日：1997-03-04
申请号：US458112
申请日：1995-06-02
申请人： Kazushige Sato , Atsuo Watanabe , Kenichi Kikushima , Nobuo Owada , Masaya Iida
发明人： Kazushige Sato , Atsuo Watanabe , Kenichi Kikushima , Nobuo Owada , Masaya Iida
IPC分类号： H01L21/285 , H01L21/8249 , H01L27/06 , H01L21/265
CPC分类号： H01L21/8249 , H01L21/28518 , H01L27/0635 , Y10S148/009
摘要： In a method of fabricating a semiconductor device having a MISFET and/or bipolar transistor and/or a resistor formed with different surface portions of a single silicon semiconductor substrate in which a silicide layer is formed on each of source/drain regions of the MISFET and/or collector contact region and extrinsic base region of the bipolar transistor and/or contact regions of the resistor, the bipolar transistor has its emitter region formed by diffusing an impurity contained in doped polysilicon film serving as an emitter electrode of the bipolar transistor into a part of its base region. The resistor may have a resistive region formed in a surface portion of the substrate and may be covered with an insulating film and a doped polysilicon film thereon or may have a doped polysilicon film formed over a surface portion of the substrate as a resistor element. These doped polysilicon films in the resistor are films which are formed in the same step as that for the doped silicon film serving as the emitter electrode in the bipolar transistor. Each of the doped polysilicon film in the bipolar transistor and that in the resistor are covered with an insulating film before a refractory metal film is formed over a whole surface of the substrate to prevent formation of silicide films on the doped polysilicon films in the bipolar transistor and resistor.
摘要翻译：在制造具有MISFET和/或双极晶体管和/或形成有单晶硅半导体衬底的不同表面部分的电阻器的半导体器件的方法中，其中在MISFET的每个源极/漏极区域上形成硅化物层， /或集电极接触区域和双极性晶体管的非本征基极区域和/或电阻器的接触区域，双极晶体管的发射极区域通过将掺杂多晶硅膜中所含的杂质扩散到双极型晶体管的发射电极而形成，其基地区的一部分。电阻器可以具有形成在衬底的表面部分中的电阻区域，并且可以在其上覆盖绝缘膜和掺杂多晶硅膜，或者可以在衬底的表面部分上形成作为电阻器元件的掺杂多晶硅膜。电阻器中的这些掺杂多晶硅膜是与双极晶体管中的发射极电极的掺杂硅膜相同的步骤形成的膜。在双极晶体管的整个表面上形成耐火金属膜之前，双极晶体管中的每个掺杂多晶硅膜和电阻器中的掺杂多晶硅膜都被绝缘膜覆盖，以防止在双极晶体管中的掺杂多晶硅膜上形成硅化物膜和电阻。

36. 发明授权

US5132919A Automatic measuring device for measuring the amount of wax, oil and other substances applied on the surface of a workpiece 失效
标题翻译：自动测量装置，用于测量应用于工件表面的WAX，油和其他物质的量
公开(公告)号：US5132919A
公开(公告)日：1992-07-21
申请号：US615594
申请日：1990-11-19
申请人： Masahiro Nishio , Masaya Imai , Mitsuo Kamio , Hiroyuki Shindo , Sadao Hisada , Atsuo Watanabe , Shigeru Kato
发明人： Masahiro Nishio , Masaya Imai , Mitsuo Kamio , Hiroyuki Shindo , Sadao Hisada , Atsuo Watanabe , Shigeru Kato
IPC分类号： G01B11/06 , B05C11/10 , G01G9/00 , G01N21/27 , G01N35/10
CPC分类号： G01G9/00 , G01N21/3563
摘要： This invention provides automatic measuring apparatus for measuring the amount of wax, oil and other substances applied on a specified portion of a workpiece. A controller unit controls cleaning, measuring and calculating operations. Under such control, the workpiece set in a cleaning device is automatically cleaned using an appropriate solvent. The solvent used for cleaning the workpiece is automatically supplied to a measuring device and the absorption spectrum of the solvent is measured. Based on the data of the absorption spectrum measured by the measuring device, a calculating device automatically calculates the application amount of the wax, the oil or the other substances applied over the workpiece. The automatic measuring apparatus thus enhances measuring precision and reduces the time period required for the measuring operation. During the cleaning operation prior to the measuring operation, the solvent is sealed and prevented from leaking in the cleaning device, thereby assuring a safe operating environment.

37. 发明授权

US4990257A Concentration of solution by reverse osmosis 失效
标题翻译：通过反向麻醉的浓度浓度
公开(公告)号：US4990257A
公开(公告)日：1991-02-05
申请号：US538540
申请日：1990-06-14
申请人： Atsuo Watanabe , Mitsutoshi Nakajima , Hiroshi Nabetani , Yasunori Yamada , Tsutomu Ohmori
发明人： Atsuo Watanabe , Mitsutoshi Nakajima , Hiroshi Nabetani , Yasunori Yamada , Tsutomu Ohmori
IPC分类号： B01D61/08 , A23L2/08 , B01D61/02 , B01D61/58
CPC分类号： A23L2/085 , B01D61/022
摘要： Provided is a multistage method and apparatus for concentrating a solution by reverse osmosis, comprising the steps and means for: maximizing the concentration of absolute in a solution in a multistage apparatus having only standard capacity pumps, including steps of providing first concentrating means for concentrating a solution to a first concentration, said first concentrating means comprising a least one concentrating unit which positioned upstream with respect to a direction in which a solution to be concentrated flows, and providing second concentrating means for concentrating the solution that has been concentrated by first concentrating means to a second concentration which is higher than said first concentrating means comprising at least one concentrating unit which is positioned downstream with respect to said direction; said concentrating units comprising consisting essentially of respective membrane modules and respective standard capacity pumps, the membrane module of the concentrating unit of said first concentrating means comprising a tight reverse osmosis membrane with a high rejection percentage sufficient to achieve a high concentration of said solution with a high flux density of solvent flowing through the membrane, and the membrane module of the concentrating unit of said second concentrating means comprising a loose reverse osmosis membrane with a lower rejection percentage sufficient to easily achieve a further concentration of said first concentrating means with a high flux density of solution flowing through the membrane.

38. 发明授权

US07982266B2 Dielectric material separated-type, high breakdown voltage semiconductor circuit device, and production method thereof 有权
标题翻译：电介质材料分离型，高击穿电压半导体电路器件及其制造方法
公开(公告)号：US07982266B2
公开(公告)日：2011-07-19
申请号：US11684032
申请日：2007-03-09
申请人： Atsuo Watanabe , Mitsutoshi Honda , Norio Ishitsuka , Masahiro Ito , Toshihito Tabata , Shinichi Kurita , Hidekazu Kamioka
发明人： Atsuo Watanabe , Mitsutoshi Honda , Norio Ishitsuka , Masahiro Ito , Toshihito Tabata , Shinichi Kurita , Hidekazu Kamioka
IPC分类号： H01L27/12
CPC分类号： H01L21/76286 , H01L29/7394 , H01L29/7824
摘要： A dielectrically isolated semiconductor device of high reliability is provided by realizing a fine and deep element isolating region which can prevent dislocation of an oxide film as an insulation layer by oxidation-induced stress. The dielectrically isolated semiconductor device includes an SOI substrate supporting an active element layer deeper than an expanded distance of a depletion layer subjected to the highest voltage applied to the device, and an element isolating region which encloses the active element layer. The element isolating region contains a deep trench which comes into contact with the insulation layer, and which is filled with n heavily doped layers on both side walls, second insulation films each adjacent to the n heavily doped layer and a polycrystalline semiconductor layer formed between the second insulation films.
摘要翻译：通过实现能够防止作为绝缘层的氧化膜由于氧化诱发应力而脱位的细微深元件隔离区域，提供高可靠性的介电隔离半导体器件。介电隔离的半导体器件包括支撑有源元件层的SOI衬底，该有源元件层比经受施加到器件的最高电压的耗尽层的扩展距离更深，以及包围有源元件层的元件隔离区域。元件隔离区域包含与绝缘层接触的深沟槽，并且在两个侧壁上填充有n个重掺杂层，每个与n重掺杂层相邻的第二绝缘膜和形成在第二绝缘层之间的多晶半导体层第二绝缘膜。

39. 发明申请

US20100183157A1 AUDIO SIGNAL REPRODUCTION DEVICE AND AUDIO SIGNAL REPRODUCTION SYSTEM 有权
标题翻译：音频信号再现设备和音频信号再现系统
公开(公告)号：US20100183157A1
公开(公告)日：2010-07-22
申请号：US12664557
申请日：2008-05-23
申请人： Atsuo Watanabe
发明人： Atsuo Watanabe
IPC分类号： H04R5/00
CPC分类号： H04S3/002 , H04R2400/03
摘要： In an audio signal reproduction device and an audio signal reproduction system of the present invention, an SLch sound is reproduced as a mixed sound that is adjusted appropriately by two speakers 5a, 5d located at Lch and SBLch speaker positions, and an SRch sound is reproduced as a mixed sound that is adjusted appropriately by two speakers 5b, 5e located at Rch and SBRch speaker positions. This configuration can achieve 5.1 ch virtual reproduction with high sound quality in which sounds for 5.1 channels of LPCM 7.1 ch audio information included in the contents are output as they are and sounds for the remaining 2 channels are reproduced artificially even if speakers compatible with the 5.1 ch sound field system are connected.
摘要翻译：在本发明的音频信号再现装置和音频信号再现系统中，SLch声音被再现为由位于Lch和SBLch扬声器位置的两个扬声器5a，5d适当地调节的混合声音，并且再现SRch声音作为由位于Rch和SBRch扬声器位置的两个扬声器5b，5e适当调节的混合声音。该配置可以实现5.1声道高音质虚拟再现，其中包含在内容中的5.1声道LPCM 7.1声道信息的声音原样输出，其余2声道的声音即使人声兼容，即使扬声器与5.1 ch声场系统连接。

40. 发明授权

US07522692B2 Isolator and a modem device using the isolator 失效
标题翻译：隔离器和使用隔离器的调制解调器设备
公开(公告)号：US07522692B2
公开(公告)日：2009-04-21
申请号：US11714856
申请日：2007-03-07
申请人： Seigoh Yukutake , Yasuyuki Kojima , Minehiro Nemoto , Masatsugu Amishiro , Takayuki Iwasaki , Shinichiro Mitani , Katsuhiro Furukawa , Chiyoshi Kamada , Atsuo Watanabe , Takayuki Oouchi , Nobuyasu Kanekawa
发明人： Seigoh Yukutake , Yasuyuki Kojima , Minehiro Nemoto , Masatsugu Amishiro , Takayuki Iwasaki , Shinichiro Mitani , Katsuhiro Furukawa , Chiyoshi Kamada , Atsuo Watanabe , Takayuki Oouchi , Nobuyasu Kanekawa
IPC分类号： H04L23/00 , H04B1/38 , H01L29/00
CPC分类号： H04L25/0266 , H01L2924/0002 , H04L25/0268 , H04L25/0272 , H04L25/028 , H04L25/0292 , H04L27/0002 , H04M11/06 , H01L2924/00
摘要： A communication system is provided including a transceiver and an application controller to transmit and receive signals through the transceiver. An isolator which insulates and separates the transceiver and application controller includes primary and secondary side circuits insulated from each other on a substrate and a capacitive insulating means to transfer signals between the primary and second sides while insulating and separating the primary side circuit from the secondary side circuit.
摘要翻译：提供一种通信系统，包括收发机和应用控制器，用于通过收发信机发送和接收信号。绝缘和分离收发器和应用控制器的隔离器包括在基板上彼此绝缘的初级和次级侧电路和用于在初级侧和第二侧之间传递信号的电容绝缘装置，同时将初级侧电路与次级侧隔离电路。

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